Volume 164; Issue 1-4

Main
Journal of Crystal Growth
Volume 164; Issue 1-4

Journal of Crystal Growth

Volume 164; Issue 1-4

1

Gas source MBE growth of SiSiGe device materials

K. Werner, A. Storm, S. Butzke, J.W. Maes, M. van Rooy, P. Alkemade, E. Algra, M. Somers, B. de Lange, E. van der Drift, T. Zijlstra, S. Radelaar

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 1.03 MB

english, 1996

2

Simple high conductance gas line for high growth rate and low transient

J.L. Benchimol, M. Ancilotti

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 318 KB

english, 1996

3

Selective area chemical beam epitaxy for butt-coupling integration

P. Legay, F. Alexandre, J.L. Benchimol, M. Allovon, F. Laune, S. Fouchet

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 483 KB

english, 1996

4

CBE growth of InGaAs(P) alloys using TDMAAs and TBP

B. Lamare, J.L. Benchimol, P. Ossart, G. Le Roux

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 218 KB

english, 1996

5

Parametric study on lattice-matched and pseudomorphic InGaAs/InAlAs/InP modulation-doped heterostructures grown by GSMBE

J.X. Chen, A.Z. Li, Y.C. Ren, M. Qi, Y.G. Chang

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 512 KB

english, 1996

6

Recent progress in the multi-wafer CBE system

Hideyasu Ando, Shinji Yamaura, Toshio Fujii

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 1.16 MB

english, 1996

7

Epitaxial dysprosium phosphide grown by gas-source and solid-source MBE on gallium arsenide substrates

L.P. Sadwick, P.P. Lee, M. Patel, M. Nikols, R.J. Hwu, J.E. Shield, D.C. Streit, D. Brehmer, K. McCormick, S.J. Allen, R.W. Gedridge

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 300 KB

english, 1996

8

Real-time optical monitoring of GaxIn1 − xP and GaP heteroepitaxy on Si under pulsed chemical beam conditions

N. Dietz, U. Rossow, D.E. Aspnes, K.J. Bachmann

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 422 KB

english, 1996

9

Temperature dependence of GaAs chemical etching using AsCl3

J.M. Ortion, Y. Cordier, J.Ch. Garcia, C. Grattepain

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 429 KB

english, 1996

10

Tellurium doping of InP using triisopropylindium-diisopropyltellurium (TIPInDIPTe)

M.J. Antonell, C.R. Abernathy, R.W. Gedridge

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 300 KB

english, 1996

11

P2-induced PAs exchange on GaAs during gas-source molecular beam epitaxy growth interruptions

C.H. Yan, A.Y. Lew, E.T. Yu, C.W. Tu

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 403 KB

english, 1996

12

In-situ pyrometric interferometry monitoring of In0.5Ga0.5PIn0.5Al0.5P material systems during gas-source molecular beam epitaxy growth

D.L. Sato, H.P. Lee, J.M. Kuo, H.C. Kuo

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 282 KB

english, 1996

13

Growth of SiC and III–V nitride thin films via gas-source molecular beam epitaxy and their characterization

Robert F. Davis, S. Tanaka, L.B. Rowland, R.S. Kern, Z. Sitar, S.K. Ailey, C. Wang

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 1.18 MB

english, 1996

14

First epitaxial InP tunnel junctions grown by chemical beam epitaxy

M.F. Vilela, N. Medelci, A. Bensaoula, A. Freundlich, P. Renaud

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 345 KB

english, 1996

15

The rotation of the alignment by 90° of (H(CAs)2) complexes resulting from metalorganic molecular beam epitaxy or metalorganic vapour phase epitaxy growth on GaAs(001) using trimethylgallium

B.R. Davidson, R.C. Newman, T. Kaneko, O. Naji, K.H. Bachem

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 422 KB

english, 1996

16

An evaluation of alternative precursors in chemical beam epitaxy: tris-dimethylaminoarsenic, tris-dimethylaminophosphorus, and tertiarybutylphosphine

N.Y. Li, H.K. Dong, W.S. Wong, C.W. Tu

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 381 KB

english, 1996

17

Growth study of chemical beam epitaxy of GaNxP1 − x using NH3 and tertiarybutylphosphine

N.Y. Li, W.S. Wong, D.H. Tomich, H.K. Dong, J.S. Solomon, J.T. Grant, C.W. Tu

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 340 KB

english, 1996

18

GSMBE growth and PL investigation of lattice-matched InGaAsInP quantum wells

Xiaoliang Wang, Dianzhao Sun, Meiying Kong, Xun Hou, Yiping Zeng

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 305 KB

english, 1996

19

Investigation of facet formation and competition in MBE growth

Shaozhong Li, Qi Xiang, Dawen Wang, Kang L. Wang

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 407 KB

english, 1996

20

The effect of III–V ratio at the substrate surface on the quality of InP grown by GSMBE

A.Z. Li, J.X. Chen, M. Qi, Y.C. Ren

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 254 KB

english, 1996

21

An investigation of ZnSe growth by chemical beam epitaxy using modulated beam scattering and related techniques

J.S. Foord, C.L. Levoguer, G.J. Davies

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 407 KB

english, 1996

22

Growth and mechanistic studies of diamond formation by chemical beam epitaxy using methyl and acetylene precursors

J.S. Foord, K.P. Loh, N.K. Singh, R.B. Jackman, G.J. Davies

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 448 KB

english, 1996

23

Synthesis of highly strained InyGa1 − yP/InxGa1 − xAs/InyGa1 − yP quantum well structures with strain compensation

C.H. Yan, C.W. Tu

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 330 KB

english, 1996

24

Initial growth stages of AlxGa1 − xP on epitaxial silicon

C.J. Santana, C.R. Abernathy, S.J. Pearton, K.S. Jones

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 668 KB

english, 1996

25

MOMBE growth of high quality GaInAsP (λg = 1.05 μm) for waveguide applications

H. Künzel, P. Albrecht, R. Gibis, M. Hamacher, S. Schelhase

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 373 KB

english, 1996

26

Growth of resonant interband tunneling diodes using trimethylamine alane

R. Tsui, K. Shiralagi, J. Shen

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 369 KB

english, 1996

27

MO(GS)MBE and photo-MO(GS)MBE of II–VI semiconductors

Shizuo Fujita, Yoichi Kawakami, Shigeo Fujita

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 449 KB

english, 1996

28

Pseudomorphic InGaAsIn(Ga)P bidimensional electron gas grown by chemical beam epitaxy

J.F. Carlin, A. Rudra, M. Ilegems

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 412 KB

english, 1996

29

MOMBE selective infill growth of InP:Si and InGaAs:Si and large area MOMBE regrowth

S. Schelhase, J. Böttcher, R. Gibis, H. Künzel, A. Paraskevopoulos

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 841 KB

english, 1996

30

Behavior of monolayer holes on MBE grown GaAs surfaces during annealing revealed by in situ scanning electron microscopy

N. Inoue, Y. Homma, J. Osaka, T. Araki

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 205 KB

english, 1996

31

Metalorganic molecular beam epitaxy growth and etching of GaSb on flat and high-index surfaces using trisdimethylaminoantimony

K. Yamamoto, H. Asahi, T. Hayashi, K. Asami, S. Gonda

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 327 KB

english, 1996

32

III-N light emitting diodes fabricated using RF nitrogen gas source MBE

J.M. Van Hove, G. Carpenter, E. Nelson, A. Wowchak, P.P. Chow

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 305 KB

english, 1996

33

Growth of GaN by gas-source molecular beam epitaxy by ammonia and by plasma generated nitrogen radicals

W.S. Wong, N.Y. Li, H.K. Dong, F. Deng, S.S. Lau, C.W. Tu, J. Hays, S. Bidnyk, J.J. Song

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 418 KB

english, 1996

34

The use of CBr4 and SiBr4 doping in MOMBE and application to InP-based heterojunction bipolar transistor structures

E.A. Beam III, H.F. Chau

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 451 KB

english, 1996

35

Growth control of GaAs using short-pulse supersonic beam epitaxy

Suian Zhang, Jie Cui, Yoshinobu Aoyagi

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 415 KB

english, 1996

36

Increasing the range of growth temperatures available for GaAs selective area growth using triisopropylgallium and arsine

T.J. Whitaker, T. Martin, R.W. Freer

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 428 KB

english, 1996

37

Atomic force microscopy studies of substrate cleaning using tris(dimethylamino)arsenic and tris(dimethylamino) antimony and investigations of surface decomposition mechanisms

T.J. Whitaker, T. Martin, A.D. Johnson, A.J. Pidduck, J.P. Newey

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 478 KB

english, 1996

38

Compositional micro-area modification of GaAs surfaces by an electron beam under phosphorus flux

H. Okumura, S. Yoshida

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 326 KB

english, 1996

39

Observation of MBE-grown cubic-GaNGaAs and cubic-GaN3CSiC interfaces by high resolution transmission electron microscope

H. Okumura, K. Ohta, T. Nagatomo, S. Yoshida

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 394 KB

english, 1996

40

An in-situ laser-light scattering study of the development of surface topography during GaAs and InxGa1 − xAs chemical beam epitaxy

A.R. Boyd, T.B. Joyce, R. Beanland

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 550 KB

english, 1996

41

Substitution of InP layers to InAs for strain compensation in GaxIn1 − xAsInP superlattices

R.T.H. Rongen, M.R. Leys, H. Vonk, J.H. Wolter, Y.S. Oei

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 551 KB

english, 1996

42

Heterojunction bipolar transistors with low temperature Be-doped base grown by CBE

G.O. Munns, W.L. Chen, G.I. Haddad

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 538 KB

english, 1996

43

In situ selective area growth of GaAs, AlAs, and AlGaAs using MOMBE

Seikoh Yoshida, Masahiro Sasaki

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 365 KB

english, 1996

44

Co-integration of high speed InP-based HBTs and RTDs using chemical beam epitaxy

W.L. Chen, G.O. Munns, X. Wang, G.I. Haddad

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 348 KB

english, 1996

45

Beam geometrical effects on planar selective area epitaxy of InPGaInAs heterostructures

M. Wachter, H. Heinecke

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 564 KB

english, 1996

46

Selective InAs growth by chemical beam epitaxy

K. Shiralagi, M. Walther, R. Tsui, H. Goronkin

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 429 KB

english, 1996

47

Materials and electrical characteristics of carbon-doped Ga0.47In0.53As using carbontetrabromide by MOMBE for HBT device applications

R.A. Hamm, S. Chandrasekhar, L. Lunardi, M. Geva, R. Malik, D. Humphrey, R. Ryan

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 681 KB

english, 1996

48

Kinetics of chemical beam epitaxy for high quality ZnS film growth

W. Tong, B.K. Wagner, T.K. Tran, W. Ogle, W. Park, C.J. Summers

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 420 KB

english, 1996

49

MOMBE growth of InAsP laser materials

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 628 KB

english, 1996

50

Growth mechanisms and morphology of Ar+ laser assisted CBE of GaAs

A.R. Boyd, T.J. Bullough, T. Farrell, T.B. Joyce

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 385 KB

english, 1996

51

Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy

M. Kondow, K. Uomi, T. Kitatani, S. Watahiki, Y. Yazawa

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 344 KB

english, 1996

52

A comparison of RHEED reconstruction phases on (100) InAs, GaAs and InP

B. Junno, S. Jeppesen, M.S. Miller, L. Samuelson

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 342 KB

english, 1996

53

In-situ monitoring of Si and SiGe growth on Si(001) surfaces during gas-source molecular beam epitaxy using reflectance anisotropy

J. Zhang, A.K. Lees, A.G. Taylor, D. Raisbeck, N. Shukla, J.M. Fernández, B.A. Joyce, M.E. Pemble

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 515 KB

english, 1996

54

A detailed time of flight study of the cracking pattern of trimethylgallium; implications for MOMBE growth

O. Naji, J. Zhang, T. Kaneko, T.S. Jones, J.H. Neave, B.A. Joyce

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 570 KB

english, 1996

55

Strained GaInAsInP MQW layers grown by CBE for optical components

C.G.M. Vreeburg, Y.S. Oei, B.H. Verbeek, J.J.G.M. van der Tol, R.T.H. Rongen, H. Vonk, M.R. Leys, B.H.P. Dorren, J.H. Wolter

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 512 KB

english, 1996

56

Growth of GaInAs(P) using a multiwafer MOMBE

B. Marheineke, M. Popp, H. Heinecke

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 470 KB

english, 1996

57

Growth and doping of Si and SiGe films by hydride gas-source molecular beam epitaxy

B.A. Joyce, J.M. Fernández, M.H. Xie, A. Matsumura, J. Zhang, A.G. Taylor

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 578 KB

english, 1996

58

Influence of H2 on electrical and optical properties of carbon-doped InP grown by MOMBE using tertiarybutylphosphine (TBP)

Je-Hwan Oh, Fumihiko Fukuchi, Ho-Cheol Kang, Makoto Konagai

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 345 KB

english, 1996

59

Zn doping of InPGaInAsP device structures in metalorganic molecular beam epitaxy using diethylzinc

E. Veuhoff, H. Baumeister, R. Treichler, M. Popp, H. Heinecke

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 517 KB

english, 1996

60

Chemical beam epitaxy on patterned substrates of InGaAsInP heterostructures for optoelectronics and nanostructures applications

C. Rigo, R. Vincenzoni, A. Stano, R. De Franceschi

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 503 KB

english, 1996

61

InP:Fe semi-insulating layers by chemical beam epitaxy

C. Rigo, M. Madella, C. Papuzza, C. Cacciatore, A. Stano, A. Gasparotto, G. Salviati, L. Nasi

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 332 KB

english, 1996

62

Growth of carbon-doped GaAs, AlGaAs and InGaAs by chemical beam epitaxy and the application of in-situ monitoring

T.B. Joyce, S.P. Westwater, P.J. Goodhew, R.E. Pritchard

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 436 KB

english, 1996

63

The investigation of GaN growth on silicon and sapphire using in-situ time-of-flight low energy ion scattering and RHEED

W.T. Taferner, A. Bensaoula, E. Kim, A. Bousetta

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 508 KB

english, 1996

64

Silicon/silicon-germanium multiple quantum wells grown by gas-source molecular beam epitaxy: hydrogen coverage and interfacial abruptness

J.M. Fernández, L. Hart, X.M. Zhang, M.H. Xie, J. Zhang, B.A. Joyce

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 540 KB

english, 1996

65

Device quality AlGaAs grown by chemical beam epitaxy

W.T. Moore, P. Mandeville, R.W. Streater, C.J. Miner

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 483 KB

english, 1996

66

Grown mirrors of InP formed by dry etching and selective CBE regrowth for short cavity lasers

M. Gotoda, H. Sugimoto, T. Isu, M. Nunoshita

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 655 KB

english, 1996

67

Growth temperature dependence of the interfacet migration in chemical beam epitaxy of InP on non-planar substrates

C. Amano, A. Rudra, P. Grunberg, J.F. Carlin, M. Ilegems

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 526 KB

english, 1996

68

Growth of Group III nitrides by chemical beam epitaxy

J.D. Mackenzie, C.R. Abernathy, J.D. Stewart, G.T. Muhr

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 427 KB

english, 1996

69

Growth studies of GaP on Si by gas-source molecular beam epitaxy

W.G. Bi, X.B. Mei, C.W. Tu

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 485 KB

english, 1996

70

Fabrication of InGaAsGaAs quantum wires on a non-(111) V-grooved GaAs substrate by chemical beam epitaxy

Sung-Bock Kim, Seong-Ju Park, Jeong-Rae Ro, El-Hang Lee

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 466 KB

english, 1996

71

Directional dependence of InAs island formation on patterned GaAs

Mark S. Miller, Søren Jeppesen, Bernhard Kowalski, Ivan Maximov, Lars Samuelson

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 935 KB

english, 1996

72

Surface morphologies of Be-doped homoepitaxial InP films

M.A. Cotta, M.M.G. de Carvalho, M.A.A. Pudenzi, K.M.I. Landers, C.F. de Souza, R.B. Martins, R. Landers, O. Teschke

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 524 KB

english, 1996

73

Sulphur doping of InGaAs using diethylsulphide

G.M. Petkos, P.J. Goodhew, T.B. Joyce

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 332 KB

english, 1996

74

Strain balanced GaP/GaAs/InP/GaAs superlattices: structural and electronic properties

A.H. Bensaoula, A. Freundlich

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 340 KB

english, 1996

75

The nitridation of GaAs and GaN deposition on GaAs examined by in situ time-of-flight low energy ion scattering and RHEED

A. Bensaoula, W.T. Taferner, E. Kim, A. Bousetta

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 338 KB

english, 1996

76

CBE growth of InP using BPE and TBP: a comparative study

C.W. Kim, G.B. Stringfellow, L.P. Sadwick

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 660 KB

english, 1996

77

Characterization of carbon delta-doping GaAs superlattices grown by chemical beam epitaxy using CBr4

B.R. Davidson, L. Hart, R.C. Newman, T.B. Joyce, T.J. Bullough

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 433 KB

english, 1996

78

CBE growth of carbon-doped p-type InGaAs using trimethylindium and unprecracked monoethylarsine as carbon auto-doping precursor

Jeong-Rae Ro, Seong-Ju Park, Sung-Bock Kim, El-Hang Lee

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 419 KB

english, 1996

79

Preface

C.R. Abernathy, C.W. Wu

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 53 KB

english, 1996

80

Editorial Board

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 64 KB

english, 1996

81

Author index

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 424 KB

english, 1996

82

Subject index

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 95 KB

english, 1996

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Tor version

Z-Library

Z-Library Since 2009 support@z-lib.do

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски