Volume 167; Issue 3-4

Journal of Crystal Growth

Volume 167; Issue 3-4
4

The formation of iron(II) sulfides in aqueous solutions

Year:
1996
Language:
english
File:
PDF, 455 KB
english, 1996
9

The carbon doping mechanism in GaAs using trimethylgallium and trimethylarsenic

Year:
1996
Language:
english
File:
PDF, 589 KB
english, 1996
12

Classical semiconductor

Year:
1996
Language:
english
File:
PDF, 661 KB
english, 1996
18

Bubble formation in Czochralski-grown lead molybdate crystals

Year:
1996
Language:
english
File:
PDF, 635 KB
english, 1996
29

Growth of CuCl single crystals composed of pure isotopes

Year:
1996
Language:
english
File:
PDF, 286 KB
english, 1996
33

Methods to improve the PAs compositional uniformity of InGaAsP thin films prepared by MOCVD

Year:
1996
Language:
english
File:
PDF, 698 KB
english, 1996
38

Epitaxial growth of ZnSeGaAs(100) by hot wall epitaxy

Year:
1996
Language:
english
File:
PDF, 349 KB
english, 1996
40

Dynamic scaling in dendritic growth

Year:
1996
Language:
english
File:
PDF, 324 KB
english, 1996
42

Physical vapor transport of zinc-telluride by dissociative sublimation

Year:
1996
Language:
english
File:
PDF, 621 KB
english, 1996
44

Diffuse interface model of nucleation

Year:
1996
Language:
english
File:
PDF, 823 KB
english, 1996
47

Dendritic growth of lead molybdate in aqueous solutions

Year:
1996
Language:
english
File:
PDF, 277 KB
english, 1996
48

Characterization of organic crystal products

Year:
1996
Language:
english
File:
PDF, 312 KB
english, 1996
50

Top-seeded solution growth of Bi12TiO20 single crystals doped with P

Year:
1996
Language:
english
File:
PDF, 409 KB
english, 1996
58

Author index

Year:
1996
Language:
english
File:
PDF, 553 KB
english, 1996
59

Subject index

Year:
1996
Language:
english
File:
PDF, 115 KB
english, 1996