Volume 348; Issue 1

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Journal of Crystal Growth
Volume 348; Issue 1

Journal of Crystal Growth

Volume 348; Issue 1

1

Effect of Ge doping on the kinetics of iron–boron pair association and dissociation in photovoltaic silicon

Xiaodong Zhu, Xuegong Yu, Xiaoqiang Li, Peng Wang, Deren Yang

Journal:

Journal of Crystal Growth

Year:

2012

Language:

english

File:

PDF, 337 KB

english, 2012

2

MOCVD-growth of thin zinc oxide films from zinc acetylacetonate and air

Christian Pflitsch, Abdelkader Nebatti, Georg Brors, Burak Atakan

Journal:

Journal of Crystal Growth

Year:

2012

Language:

english

File:

PDF, 423 KB

english, 2012

3

Hydrothermal growth and optical properties of RbBe2BO3F2 crystals

Lijuan Liu, Haitao Zhou, Xiaoling He, Xin Zhang, Xiaoyang Wang, Fuhua Lu, Changlong Zhang, Weining Zhou, Chuangtian Chen

Journal:

Journal of Crystal Growth

Year:

2012

Language:

english

File:

PDF, 781 KB

english, 2012

4

Diffusion coefficients of two mobile ions in three AB3In7VI12 single crystals (AB=Cu and Ag VI=Se or Te). Proposition of an equivalent electrical circuit

Journal:

Journal of Crystal Growth

Year:

2012

Language:

english

File:

PDF, 1017 KB

english, 2012

5

A facile hydrothermal route for the synthesis of α-FeOOH with controlled morphology

Valentin Rădiţoiu, Lucian Diamandescu, Mihai Cosmin Corobea, Alina Rădiţoiu, Nicolette Popescu-Pogrion, Cristian Andi Nicolae

Journal:

Journal of Crystal Growth

Year:

2012

Language:

english

File:

PDF, 987 KB

english, 2012

6

Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)

J.J. Zhu, Y.M. Fan, H. Zhang, G.J. Lu, H. Wang, D.G. Zhao, D.S. Jiang, Z.S. Liu, S.M. Zhang, G.F. Chen, B.S. Zhang, H. Yang

Journal:

Journal of Crystal Growth

Year:

2012

Language:

english

File:

PDF, 672 KB

english, 2012

7

Numerical analysis of the velocity of SiC growth by the top seeding method

F. Inui, B. Gao, S. Nakano, K. Kakimoto

Journal:

Journal of Crystal Growth

Year:

2012

Language:

english

File:

PDF, 2.76 MB

english, 2012

8

Improving the purity of GaN grown by the ammonothermal method with in-autoclave gas-phase acidic mineralizer synthesis

D. Tomida, S.F. Chichibu, Y. Kagamitani, Q. Bao, K. Hazu, R. Simura, K. Sugiyama, C. Yokoyama, T. Ishiguro, T. Fukuda

Journal:

Journal of Crystal Growth

Year:

2012

Language:

english

File:

PDF, 666 KB

english, 2012

9

Growth, characterization and the fourth harmonic generation at 266 nm of K2Al2B2O7 crystals without UV absorptions and Na impurity

Yonggang Wang, Lirong Wang, Xin Gao, Guiling Wang, R.K. Li, C.T. Chen

Journal:

Journal of Crystal Growth

Year:

2012

Language:

english

File:

PDF, 482 KB

english, 2012

10

Investigation of nanopatterned c-plane sapphire Substrates for Growths of polar and nonpolar GaN epilayers

Yu-Sheng Lin, Kung-Hsuan Lin, Teddy Tite, Cho-Ying Chuang, Yu-Ming Chang, J. Andrew Yeh

Journal:

Journal of Crystal Growth

Year:

2012

Language:

english

File:

PDF, 1.07 MB

english, 2012

11

Investigation of grain boundaries in BaSi2 epitaxial films on Si(1 1 1) substrates using transmission electron microscopy and electron-beam-induced current technique

Masakazu Baba, Katsuaki Toh, Kaoru Toko, Noriyuki Saito, Noriko Yoshizawa, Karolin Jiptner, Takashi Sekiguchi, Kosuke O. Hara, Noritaka Usami, Takashi Suemasu

Journal:

Journal of Crystal Growth

Year:

2012

Language:

english

File:

PDF, 1.32 MB

english, 2012

12

Epitaxial growth of orthorhombic SnO2 films on various YSZ substrates by plasma enhanced atomic layer deposition

Sungtae Kim, Dai-Hong Kim, Seong-Hyeon Hong

Journal:

Journal of Crystal Growth

Year:

2012

Language:

english

File:

PDF, 1.08 MB

english, 2012

13

Studies of influence of high temperature preannealing on oxygen precipitation in CZ Si wafers

M. Meduňa, O. Caha, J. Buršík

Journal:

Journal of Crystal Growth

Year:

2012

Language:

english

File:

PDF, 637 KB

english, 2012

14

Effective convection coefficient for porous interface and solute segregation

A.G. Ostrogorsky

Journal:

Journal of Crystal Growth

Year:

2012

Language:

english

File:

PDF, 1.01 MB

english, 2012

15

Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth

Zhiwei Li, Hongyuan Wei, Xiaoqing Xu, Guijuan Zhao, Xianglin Liu, Shaoyan Yang, Qinsheng Zhu, Zhanguo Wang

Journal:

Journal of Crystal Growth

Year:

2012

Language:

english

File:

PDF, 864 KB

english, 2012

16

Hydrothermal growth of cross-linked hyperbranched copper dendrites using copper oxalate complex

Quang Duc Truong, Masato Kakihana

Journal:

Journal of Crystal Growth

Year:

2012

Language:

english

File:

PDF, 1.52 MB

english, 2012

17

Cubic SiC formation on the C-face of 6H–SiC (0 0 0 1) substrates

Remigijus Vasiliauskas, Sandrine Juillaguet, Mikael Syväjärvi, Rositza Yakimova

Journal:

Journal of Crystal Growth

Year:

2012

Language:

english

File:

PDF, 616 KB

english, 2012

18

Thermal growth and luminescence of wurtzite ZnS nanowires and nanoribbons

B. Sotillo, P. Fernández, J. Piqueras

Journal:

Journal of Crystal Growth

Year:

2012

Language:

english

File:

PDF, 1.19 MB

english, 2012

19

Editorial Board

Journal:

Journal of Crystal Growth

Year:

2012

Language:

english

File:

PDF, 30 KB

english, 2012