Volume 2; Issue 1

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Materials Science in Semiconductor Processing
Volume 2; Issue 1

Materials Science in Semiconductor Processing

Volume 2; Issue 1

1

Neural network modeling of PECVD silicon nitride films

S. Ghosh, P.K. Dutta, D.N. Bose

Journal:

Materials Science in Semiconductor Processing

Year:

1999

Language:

english

File:

PDF, 488 KB

english, 1999

2

UV–ozone precleaning and forming gas annealing applied to wet thermal oxidation of p-type silicon carbide

Carl-Mikael Zetterling, Mikael Östling, Chris I Harris, Peter C Wood, S.Simon Wong

Journal:

Materials Science in Semiconductor Processing

Year:

1999

Language:

english

File:

PDF, 121 KB

english, 1999

3

Patent report

Journal:

Materials Science in Semiconductor Processing

Year:

1999

Language:

english

File:

PDF, 377 KB

english, 1999

4

Characterization of molecular beam epitaxy grown GaS film for GaAs surface passivation

Naoya Okamoto, Hitoshi Tanaka

Journal:

Materials Science in Semiconductor Processing

Year:

1999

Language:

english

File:

PDF, 449 KB

english, 1999

5

Electroless copper deposition solution induced chemical changes in low-k fluorinated dielectrics

D.T. Hsu, F.G. Shi, S. Lopatin, Y. Shacham-Diamand, B. Zhao, M. Brongo, P.K. Vasudev

Journal:

Materials Science in Semiconductor Processing

Year:

1999

Language:

english

File:

PDF, 164 KB

english, 1999

6

Al speed fill

Gerald P Beyer, Karen Maex, Stephen Daniels, Sophia Lee, Joris Proost, Hugo Bender, Moshe Judelewicz, Nirmalya Maity

Journal:

Materials Science in Semiconductor Processing

Year:

1999

Language:

english

File:

PDF, 1.24 MB

english, 1999

7

Oxidation enhanced diffusion during the growth of ultrathin oxides

P.A Stolk, A.C.M.C van Brandenburg, A.H Montree

Journal:

Materials Science in Semiconductor Processing

Year:

1999

Language:

english

File:

PDF, 228 KB

english, 1999

8

Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon

V Privitera, E Napolitani, F Priolo, S Moffatt, A La Magna, G Mannino, A Carnera, A Picariello

Journal:

Materials Science in Semiconductor Processing

Year:

1999

Language:

english

File:

PDF, 368 KB

english, 1999

9

Oxygen precipitate precursors and low temperature gettering processes. I. Segregation of oxygen and thermal donor generation in the 600–850°C range

S Cadeo, S Pizzini, M Acciarri, A Cavallini

Journal:

Materials Science in Semiconductor Processing

Year:

1999

Language:

english

File:

PDF, 351 KB

english, 1999

10

Oxygen precipitate precursors and low temperature gettering processes. II. DLTS analysis of deep levels associated to oxide precipitates

E. Yakimov, D. Feklisova, A. Castaldini, A. Cavallini, S. Cadeo, S. Pizzini

Journal:

Materials Science in Semiconductor Processing

Year:

1999

Language:

english

File:

PDF, 185 KB

english, 1999

11

Transparent semiconducting ZnO:Al thin films prepared by spray pyrolysis

W.T Seeber, M.O Abou-Helal, S Barth, D Beil, T Höche, H.H Afify, S.E Demian

Journal:

Materials Science in Semiconductor Processing

Year:

1999

Language:

english

File:

PDF, 1.15 MB

english, 1999

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