Volume 43-44; Issue none

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Microelectronic Engineering
Volume 43-44; Issue none

Microelectronic Engineering

Volume 43-44; Issue none

1

Editorial

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 26 KB

english, 1998

2

Surface structure change between InGaAs dots and InGaAsP flat surface induced by in situ arsenic/phosphorus replacement

Kazunari Ozasa, Yoshinobu Aoyagi

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 705 KB

english, 1998

3

Collective modes in semiconductor heterostructures

F.J Fernández-Velicia, V.R Velasco

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 45 KB

english, 1998

4

Dephasing effects induced by weak disorder in superlattices

Enrique Diez, Francisco Domı́nguez-Adame, Angel Sánchez

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 110 KB

english, 1998

5

Second order mesoscopic electric susceptibility in AlxGa1−xAs/GaAs quantum wells

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 132 KB

english, 1998

6

Controllability of the wavefunction localization in an asymmetrical bi-periodic GaAs/AlAs superlattice

Kenji Kawashima, Kenzo Fujiwara

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 179 KB

english, 1998

7

Barrier thickness dependence of photocurrent spectral intensity in GaAs/AlAs superlattice p-i-n diodes

K Kawasaki, K Kawashima, M Takeuchi, K Fujiwara

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 229 KB

english, 1998

8

Spin splitting effect on the effective mass of GaAs/AlxGa1−xAs quantum wells

R.M. de la Cruz, C. Kanyinda-Malu

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 70 KB

english, 1998

9

Pattern formation and stability under bistable electro-optical absorption in quantum wells

L.L. Bonilla, C.A. Velasco, V.A. Kochelap

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 284 KB

english, 1998

10

The origin to various PL-bands in Si/Ge strain-symmetrized superlattices

Janos Olajos, Stefan Nilsson, Markus Gail, Gerhard Abstreiter

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 354 KB

english, 1998

11

Direct determination of the piezoelectric field in (111) strained InGaAs/GaAs multiple quantum well p-i-n structures by photoreflectance

S.A. Dickey, A. Majerfeld, J.L. Sánchez-Rojas, A. Sacedón, E. Muñoz, A. Sanz-Hervás, M. Aguilar, B.W. Kim

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 99 KB

english, 1998

12

Photocurrent spectroscopy of InGaAs/InAlAs multi-quantum well structures and estimated heavy effective-mass of electrons in InGaAs wells

K Tanaka, N Kotera

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 96 KB

english, 1998

13

Interface roughness of InAs/AlGaAsSb deep quantum well investigated by X-ray reflectivity

N Kuze, H Goto, S Matsuno, M Matsui, I Shibasaki

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 311 KB

english, 1998

14

Interface effects on the resonant tunnelling in GaAs/AlxGa1−xAs double-quantum-well triple-barriers

Maria Consuelo A Lima, Gil A Farias, Valder N Freire

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 101 KB

english, 1998

15

Optical study of the indium accumulation in strained quantum wells

M Ghouma, F Hassen, H Sghaier, H Maaref, R Murray

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 267 KB

english, 1998

16

Effect of indium surface segregation on excitonic properties in (111)B-grown (In,Ga)As/GaAs multiple quantum wells

P Ballet, P Disseix, J Leymarie, A Vasson, A.-M Vasson, R Grey

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 187 KB

english, 1998

17

Electron mobility in selectively Si-doped GaAs/N–Al0.3Ga0.7As quantum well heterostructures with super-flat interfaces grown on (411)A GaAs substrates by molecular beam epitaxy

Satoshi Shimomura, Keisuke Shinohara, Kenji Kasahara, Satoshi Hiyamizu

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 124 KB

english, 1998

18

Finite superlattice with a localized state: A possible new submillimeter wave emitter, in a numerical simulation

José E. Manzoli, O. Hipólito

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 357 KB

english, 1998

19

Spectroscopy of second-harmonic generation from ZnTe/Zn1−xMnxTe quantum wells

A.V Zayats, A.N Georgobiani, Yu.A Repeyev, D.E Ashenford, B Lunn

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 121 KB

english, 1998

20

Influence of thin AlAs interface layers on exciton transitions in InGaAs/GaAs quantum wells

Kyu-Seok Lee, El-Hang Lee, Chae-Deok Lee, Sam Kyu Noh, Yongmin Kim

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 121 KB

english, 1998

21

Photocurrent spectra of monolithically integrated dual multiple quantum wells

K. Kawasaki, K. Kawashima, K. Fujiwara, N. Sano

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 214 KB

english, 1998

22

Temperature dependence of quantized states in (111)B-grown (In,Ga)As/GaAs multiple quantum well p-i-n diodes

P Ballet, J Leymarie, A Vasson, A.-M Vasson, R Grey

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 161 KB

english, 1998

23

Optical properties of stepped InxGa1−xAs/GaAs quantum wells

A D'Andrea, N Tomassini, L Ferrari, M Righini, S Selci, M.R Bruni, D Schiumarini, M.G Simeone

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 97 KB

english, 1998

24

Optical characterization of GaAs/AlAs short period superlattices

D.H Woo, I.K Han, W.J Choi, S Lee, H.J Kim, J.I Lee, S.H Kim, K.N Kang, S.G Choi, Y.D Kim, S.D Yoo, D.E Aspnes, S.J Rhee, J.C Woo

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 110 KB

english, 1998

25

Effects of design parameters on non-biased optical bistable devices using multiple quantum well nipi-diode structure

O.K Kwon, K.-S Lee, E.-H Lee, B.T Ahn

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 125 KB

english, 1998

26

Asymmetric line-shape of optical transitions in multiple quantum wells

T Worren, K.B Ozanyan, F Martelli, O Hunderi

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 247 KB

english, 1998

27

Carrier capture in InAs monolayer quantum wells grown on GaAs substrates

S.J Chua, S.J Xu, X.H Zhang, X Zhang

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 153 KB

english, 1998

28

Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces

E Marega Jr., A.L Libardi, D.I Lubyshev, P.P Gonzalez–Borrero, P Basmaji

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 262 KB

english, 1998

29

(GaAs)m(GaP)n low dimensional short-period superlattice fabricated by atomic layer epitaxy

Hideo Isshiki, Yoshinobu Aoyagi, Takuo Sugano

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 356 KB

english, 1998

30

Dispersion of optical and acoustical phonons in the zinc-blende group III-nitride superlattices

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 184 KB

english, 1998

31

Conducting wires embedded in an i-GaAs matrix for electronic applications

V.A Kulbachinskii, R.A Lunin, V.G Kytin, A.S Bugaev, A.P Senichkin, A.V Demin

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 92 KB

english, 1998

32

Quantum wire splitting in nanostructures

Carsten Pigorsch, Wilfried Klix, Roland Stenzel

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 217 KB

english, 1998

33

High-density In0.14Ga0.86As/(GaAs)5(AlAs)5 quantum wires naturally formed on (775)B-oriented GaAs substrates by molecular beam epitaxy

S Hiyamizu, M Higashiwaki, M Yamamoto, S Shimomura

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 564 KB

english, 1998

34

Resonant tunnelling via InAs self-organized quantum dot states

Jiannong Wang, Ruigang Li, Yuqi Wang, Weikun Ge, David Z.-Y Ting

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 148 KB

english, 1998

35

Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices

Jian Liu, Erich Gornik, Shijie Xu, Houzhi Zheng

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 127 KB

english, 1998

36

Photoluminescence investigation of the tunnelling dynamics of holes and electrons in a p-type AlAs/GaAs resonant tunnelling structure

H Käß, W Schuddinck, E Goovaerts, C Van Hoof, G Borghs

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 314 KB

english, 1998

37

Time dependence of quantum well recombination luminescence in a bipolar AlAs/GaAs resonant tunnelling structure

I Romandic, A Bouwen, E Goovaerts, C Van Hoof, M Mielants, G Borghs

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 135 KB

english, 1998

38

The influence of interfacial growth patterns on the transmission of electrons through nonabrupt GaAs/AlxGa1−xAs double-barriers

Maria Consuelo A Lima, Gil A Farias, Valder N Freire

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 118 KB

english, 1998

39

Three- versus two-dimensional electron gas injection in resonant tunnelling devices

T Wosiński, T Figielski, A Ma̧kosa, M Kaniewska, K Regiński

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 95 KB

english, 1998

40

Effects of inelastic scattering on resonant interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures

M.H Liu, Y.H Wang, M.P Houng

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 243 KB

english, 1998

41

Resonant tunnelling used as an optical probe to the electronic structure of quantum wells

Márcio A.R Souza, V.A Chitta, G.E Marques

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 187 KB

english, 1998

42

Fabrication of self-assembled InGaAs, GaAs, and InAs quantum dots by chemical beam epitaxy

Jeong-Rae Ro, Sung-Bock Kim, El-Hang Lee, Seong-Ju Park

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 750 KB

english, 1998

43

Spatial confinement of self-organized MBE-grown InxGa1−xAs quantum dots

A.A Quivy, J.R Leite

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 474 KB

english, 1998

44

Phonon scattering from self-aligned InAs quantum dots in GaAs

P Hawker, A.J Kent, A.V Akimov, M Henini

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 101 KB

english, 1998

45

Edge states in a magnetic quantum dot

Gukhyung Ihm, S.J Lee, H.-S Sim, K.-H Ahn, K.J Chang

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 123 KB

english, 1998

46

Lateral association of vertically-coupled quantum dots

A.F Tsatsul'nikov, M.V Belousov, N.A Bert, A.Yu Egorov, P.S Kop'ev, A.R Kovsh, I.L Krestnikov, N.N Ledentsov, M.V Maximov, A.A Suvorova, V.M Ustinov, B.V Volovik, A.E Zhukov, M Grundmann, D Bimberg, Z

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 557 KB

english, 1998

47

Novel characteristics of self assembled InAs quantum dots grown on (311)A GaAs

S Sanguinetti, S.C Fortina, E Grilli, M Guzzi, M Henini, M.D Upward, P Moriarty, P.H Beton, L Eaves

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 139 KB

english, 1998

48

Morphology evolution of InSb island grown on InP substrates by atomic layer molecular beam epitaxy

J.C Ferrer, F Peiró, A Cornet, J.R Morante, T Utzmeier, G Armelles, F Briones

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 543 KB

english, 1998

49

Low dimensional carrier confinement structure grown on patterned GaAs(111)A substrates by molecular beam epitaxy

K Fujita, H Ohnishi, Pablo O Vaccaro

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 214 KB

english, 1998

50

Atom diffusion during MBE growth on patterned substrate

Jiang Jian, Joe X Zhou, Zhantian Zhong, Chua Soo-Jin

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 427 KB

english, 1998

51

Photothermal wavelength modulated photocurrent phenomena in Si delta-doped GaAs

F Hajiev, Y Özkan, M.Ç Arikan

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 139 KB

english, 1998

52

Optical absorption and band gap shift of n-doped AlxGa1−xAs alloys grown by MBE

A. Ferreira da Silva, C. Persson, K.-F. Berggren, I. Pepe, A. Santos Alves, A.G. de Oliveira

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 323 KB

english, 1998

53

Far-infrared study of a quasi-one-dimensional electron gas formed on (100) GaAs with hole gas sidegates on a (311)A GaAs substrate

S Cinà, D.D. Arnone, T. Burke, J.H. Burroughes, C. Norman, H.P. Hughes, M. Pepper, D.A. Ritchie

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 248 KB

english, 1998

54

A spontaneous multiphoton emission induced by inhomogeneous potential in electrically modulated two-dimensional electron gases

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 144 KB

english, 1998

55

Effect of p+-contact parameters on subterahertz and terahertz ballistic current oscillations for quantized holes with negative effective masses

A.N Korshak, Z.S Gribnikov, N.Z Vagidov, S.I Kozlovsky, V.V Mitin

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 474 KB

english, 1998

56

A semiclassical approach to the integer quantum Hall problem

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 101 KB

english, 1998

57

Calculating the density of states and the linear response functions with time-dependent Schroedinger equations

Toshiaki Iitaka, Shintaro Nomura, Hideki Hirayama, Xinwei Zhao, Yoshinobu Aoyagi, Takuo Sugano

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 404 KB

english, 1998

58

A many body study of the SASER dynamics

J. Weberszpil, S.S. Makler, E.V. Anda, M.I. Vasilevskiy

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 201 KB

english, 1998

59

Calculation of exciton binding energies in a fractional-dimensional space

A. Simões Baptista, H. Abreu Santos

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 257 KB

english, 1998

60

Hole band structure of p-type delta-doping quantum wells in silicon

A.L Rosa, L.M.R Scolfaro, G.M Sipahi, R Enderlein, J.R Leite

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 190 KB

english, 1998

61

Crystalline lattice effects on tensionless surface dynamics

Esteban Moro, Rodolfo Cuerno, Angel Sánchez

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 336 KB

english, 1998

62

On the MC simulation of ohmic contacts

H. Abreu Santos, J. Alves Paisana

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 471 KB

english, 1998

63

Exciton-polariton and local-field effects in rectangular gratings

A D'Andrea, L Pilozzi

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 125 KB

english, 1998

64

Hydrodynamic model of thin film deposition

Yoshichika Mizuno, Shin-ichiro Uekusa

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 909 KB

english, 1998

65

Mesoscopic diode

K Nikolić, R Šordan

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 81 KB

english, 1998

66

Low threshold current vertical-cavity surface-emitting lasers grown at a fixed temperature

D.H Zhang, C.Y Li, S.F Yoon

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 149 KB

english, 1998

67

Assessment of current and optical confinement in operational quantum well laser

S Mil'shtein, J.M Therrien, E.J Thurkins Jr., A.K Chin, F.P Dabkowski

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 321 KB

english, 1998

68

The COALA program – computer analysis of lasers

A Lopes Ribeiro

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 137 KB

english, 1998

69

Transfer matrix modelling in DFB lasers

C.Ferreira Fernandes

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 157 KB

english, 1998

70

Ultrathin GaAs layers embedded in AlAs: a perspective for intense short wavelength emission

F Pietag, R Schwabe, V Gottschalch, M Di Ventra, A Bitz, J.L Staehli

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 122 KB

english, 1998

71

Uniformity study in PM-HEMT structures and devices by optical and electrical characterization

M. Androulidaki, C. Michelakis, M. Lagadas, V. Foukaraki, P. Panayotatos

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 268 KB

english, 1998

72

Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates

E Petitprez, P.P González-Borrero, D.I Lubyshev, E Marega, P Basmaji

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 269 KB

english, 1998

73

Photoluminescence of self organised InAs/GaAs quantum dots grown on (N11)B surfaces

S Sanguinetti, S.C Fortina, E Grilli, M Guzzi, M Henini, L Eaves

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 56 KB

english, 1998

74

Optical studies of modulation doped InAs/GaAs quantum dots

M.V Maximov, N.N Ledentsov, A.F Tsatsul'nikov, V.M Ustinov, A.V Sakharov, B.V Volovik, I.L Krestnikov, Zhao Zhen, P.N Brounkov, S.G Konnikov, P.S Kop'ev, M.V Belousov, V Turk, D Bimberg

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 169 KB

english, 1998

75

New method for the growth of highly uniform quantum dots

Dong Pan, Y.P Zeng, M.Y Kong

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 219 KB

english, 1998

76

Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy

A.F Tsatsul'nikov, S.V Ivanov, P.S Kop'ev, I.L Krestnikov, A.K Kryganovskii, N.N Ledentsov, M.V Maximov, B.Ya Mel'tser, P.V Nekludov, A.A Suvorova, A.N Titkov, B.V Volovik, M Grundmann, D Bimberg, Zh.

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 528 KB

english, 1998

77

Electronic properties and optical spectra of InAs/GaAs self-assembled quantum dots

M.A. Cusack, M. Jaros, P.R. Briddon

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 299 KB

english, 1998

78

Anisotropy effects on the orbital magnetism of electrons in a spheroidal quantum dot

S.J Lee, I Hwang, Y.S Lee, M.J Park, G Ihm

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 183 KB

english, 1998

79

Low temperature transport properties of InAs/GaAs structures with quantum dots

V.A Kulbachinskii, V.G Kytin, R.A Lunin, I.G Malkina, B.N Zvonkov, Yu.N Safyanov

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 80 KB

english, 1998

80

Lattice mismatch and conductivity in LTAlGaAs layers

M Lagadas, M Calamiotou, M Androulidaki, Z Hatzopoulos, A Christou

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 105 KB

english, 1998

81

Dependence of arsenic antisite defect concentration and two dimensional growth mode on LT GaAs growth conditions

M Lagadas, M Androulidaki, Z Hatzopoulos, M Calamiotou

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 270 KB

english, 1998

82

A static model for the SOI TMOS in strong inversion

F Djahli, S Rahmani, R Remmouche

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 485 KB

english, 1998

83

Schottky contact with dimensions less than 0.5 μm2

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 137 KB

english, 1998

84

Exploiting interface form birefringence in vertical microcavities

E.C Valadares, L.A Cury, F.M Matinaga, M.V.B Moreira

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 138 KB

english, 1998

85

Characterization of titanium silicide by Raman spectroscopy for submicron IC processing

E.H Lim, G Karunasiri, S.J Chua, Z.X Shen, H Wong, K.L Pey, K.H Lee, L Chan

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 157 KB

english, 1998

86

A new CAD oriented charge conserving capacitance model for HEMTs

M Nawaz, Geok I Ng

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 226 KB

english, 1998

87

Structural characterization of μc-Si:H films produced by R.F. magnetron sputtering

M.F Cerqueira, J.A Ferreira, M Andritschky, Manuel F.M Costa

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 303 KB

english, 1998

88

Modeling growth in SiGe gas-source molecular beam epitaxy using Si2H6 and GeH4

F Hirose, H Sakamoto

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 75 KB

english, 1998

89

Anisotropic Si reactive ion etching in fluorinated plasma

A Malinin, T Majamaa, A Hovinen

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 1.22 MB

english, 1998

90

The structure of 3C–SiC carbonized layer on Si substrate

I. Kamata, H. Tsuchida, K. Izumi

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 848 KB

english, 1998

91

Quantum size effect from n-type porous silicon

Z Mouffak, H Aourag, J.D Moreno, J.M Martinez-Duart

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 278 KB

english, 1998

92

Numerical gate capacitance–voltage characteristics and electronic structure of MBE silicon delta-FETs

José E Manzoli, O Hipólito

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 265 KB

english, 1998

93

Si/SiGe valence band offset determination using photoluminescence and DLTS in SiGe quantum-well MOS capacitors

H Gamez-Cuatzin, A Daami, L Garchery, I Sagnes, Y Campidelli, G Brémond

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 145 KB

english, 1998

94

Fabrication of Zn1−xCdxSe quantum dots by molecular beam epitaxy on the GaAs (110) cleaved surface

Hyun-Chul Ko, Doo-Cheol Park, Yoichi Kawakami, Shizuo Fujita, Shigeo Fujita

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 109 KB

english, 1998

95

Shallow donor levels of Li-doped ZnSe single crystals

Tetsuo Ikari, Kouji Maeda, Hirosumi Yokoyama, Atsuhiko Fukuyama, Kenji Yoshino

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 124 KB

english, 1998

96

Photoacoustic spectra of zincselenide thin films grown by molecular beam epitaxy

Kenji Yoshino, Yasuhiro Nakagawa, Atsuhiko Fukuyama, Kouji Maeda, Minoru Yoneta, Masakazu Ohishi, Hiroshi Saito, Tetsuo Ikari

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 89 KB

english, 1998

97

The influence of the laser fluence on the transmission features of thin CdS films formed by laser ablation

B Ullrich, H Sakai, N.M Dushkina, H Ezumi, S Keitoku, T Kobayashi

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 139 KB

english, 1998

98

Migration enhanced epitaxy of CdSe islands on ZnSe and their optical and structural characterization

K Leonardi, K Ohkawa, D Hommel, H Selke, F Gindele, U Woggon

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 190 KB

english, 1998

99

Epitaxy and in-situ reflectance difference spectroscopy of II–VI-semiconductor structures

Marcus J. Kastner, Rainer Duschl, Wolfgang Gebhardt

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 147 KB

english, 1998

100

FIR optical study of CdS nanocrystals embedded in SiO2 films

M.I. Vasilevskiy, A.G. Rolo, M.J.M. Gomes

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 141 KB

english, 1998

101

Using FEM models for the generation of microcomponent descriptions on various levels of interest

Markus Lang, Klaus Hofmann, Manfred Glesner

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 1012 KB

english, 1998

102

Formation mechanism of electric field domains

Baoquan Sun, Zhengxing Liu, Desheng Jiang

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 91 KB

english, 1998

103

Magneto–electropolymerized film formation of polypyrrole

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 132 KB

english, 1998

104

Local structures around Er atoms doped in InP revealed by fluorescence EXAFS

H Ofuchi, D Kawamura, N Matsubara, M Tabuchi, Y Fujiwara, Y Takeda

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 182 KB

english, 1998