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Volume 38; Issue 1
Main
Microelectronics Reliability
Volume 38; Issue 1
Microelectronics Reliability
Volume 38; Issue 1
1
The influence of addition elements on the early resistance changes observed during electromigration testing of Al metal lines
W.A De Ceuninck
,
V D'Haeger
,
J Van Olmen
,
A Witvrouw
,
K Maex
,
L De Schepper
,
P De Pauw
,
A Pergoot
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 307 KB
Your tags:
english, 1998
2
The modeling of resistance changes in the early phase of electromigration
Ton J Mouthaan
,
Violeta Petrescu
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 405 KB
Your tags:
english, 1998
3
Component level ESD testing
Koen Verhaege
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 476 KB
Your tags:
english, 1998
4
Ultrathin RTP oxynitride dielectrics on planar, trench and three dimensional structures
Son V. Nguyen
,
Tue Nguyen
,
D. Carl
,
D. Pricer
,
J.W. Korejwa
,
D. Dobuzinsky
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 1.00 MB
Your tags:
english, 1998
5
Change in d.c. and 1/f noise characteristics of n-submicron MOSFETs due to hot-carrier degradation
L.K.J. Vandamme
,
X. Li
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 142 KB
Your tags:
english, 1998
6
Using charged device model testing to eliminate real-world ESD failures
Andrew H. Olney
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 588 KB
Your tags:
english, 1998
7
A study of the influence of inter-metal dielectrics on electromigration performance
Sean Foley
,
Anne Ryan
,
David Martin
,
Alan Mathewson
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 213 KB
Your tags:
english, 1998
8
Reliability phenomena under AC stress
Chenming Hu
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 250 KB
Your tags:
english, 1998
9
Dielectric Reliability Measurement Methods: A Review
Andreas Martin
,
Paula O'Sullivan
,
Alan Mathewson
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 1.10 MB
Your tags:
english, 1998
10
Editorial
Journal:
Microelectronics Reliability
Year:
1998
File:
PDF, 52 KB
Your tags:
1998
11
Linewidth control effects on MOSFET ESD robustness
S Voldman
,
J Never
,
S Holmes
,
J Adkisson
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 1.04 MB
Your tags:
english, 1998
12
Degradation mechanism of GaAs MESFETs
Jae Kyoung Mun
,
Jong-Lam Lee
,
Haecheon Kim
,
Byung-Taek Lee
,
Jae Jin Lee
,
Kwang-Eui Pyun
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 299 KB
Your tags:
english, 1998
13
Reliability of III–V based heterojunction bipolar transistors
K.A Christianson
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 251 KB
Your tags:
english, 1998
14
Numerical analysis on determining the physical mechanisms contributing to the abnormal base current in post-burn-in AlGaAs/GaAs HBTs
S Sheu
,
J.J Liou
,
C.I Huang
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 407 KB
Your tags:
english, 1998
15
A low-frequency noise study of hot-carrier stressing effects in submicron Si p-MOSFETs
P Vasina
,
E Simoen
,
C Claeys
,
J Sikula
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 215 KB
Your tags:
english, 1998
16
Gate oxide leakage due to temperature accelerated degradation under plasma charging conditions
Tomasz Brożek
,
Y.David Chan
,
Chand R Viswanathan
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 286 KB
Your tags:
english, 1998
17
Hot-carrier injections in SiO2
D Vuillaume
,
A Bravaix
,
D Goguenheim
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 473 KB
Your tags:
english, 1998
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