Volume 59; Issue 6

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Applied Physics Letters
Volume 59; Issue 6

Applied Physics Letters

Volume 59; Issue 6

1

Liquid phase epitaxy of yttrium aluminum garnet: Reduction of growth rate by germanium oxide

Gualtieri, D. M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 672 KB

english, 1991

2

Monte Carlo-fluid hybrid model of the accumulation of dust particles at sheath edges in radio-frequency discharges

Sommerer, Timothy J., Barnes, Michael S., Keller, John H., McCaughey, Michael J., Kushner, Mark J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 657 KB

english, 1991

3

Bi-epitaxial grain boundary junctions in YBa2Cu3O7

Char, K., Colclough, M. S., Garrison, S. M., Newman, N., Zaharchuk, G.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 649 KB

english, 1991

4

X-ray scattering studies of the SiO2/Si(001) interfacial structure

Rabedeau, T. A., Tidswell, I. M., Pershan, P. S., Bevk, J., Freer, B. S.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 743 KB

english, 1991

5

Ultrashort pulse generation from a Q-switched AlGaAs laser with cw injection

Stelmakh, N., Lourtioz, J-M., Barthelemy, A.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 686 KB

english, 1991

6

Analysis of lateral uniformity of ultrashallow junctions in polycrystalline silicon-on-single crystal silicon systems

Park, Keunhyung, Batra, Shubneesh, Banerjee, Sanjay

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 627 KB

english, 1991

7

Monolithic two-dimensional surface-emitting strained-layer InGaAs/AlGaAs and AlInGaAs/AlGaAs diode laser arrays with over 50% differential quantum efficiencies

Goodhue, W. D., Donnelly, J. P., Wang, C. A., Lincoln, G. A., Rauschenbach, K., Bailey, R. J., Johnson, G. D.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 697 KB

english, 1991

8

Acceptor compensation mechanism by midgap defects in nitrogen-doped ZnSe films

Ohki, A., Kawaguchi, Y., Ando, K., Katsui, A.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 590 KB

english, 1991

9

Magnetotransport of piezoelectric [111] oriented strained quantum wells

Martin, R. W., Lakrimi, M., López, C., Nicholas, R. J., Chidley, E. T. R., Mason, N. J., Walker, P. J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 687 KB

english, 1991

10

Remote plasma hydrogenation of ion beam amorphized silicon

Kar, S., Pankove, J. I., Tsuo, Y. S.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 640 KB

english, 1991

11

Oxygen tracer diffusion through BaF2 and MgO overcoats on YBa2Cu3O7−Δ

Wong, S. B., Vajo, J. J., Hunter, A. T., Nieh, C. W.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 695 KB

english, 1991

12

Measurements of transmitted diffraction profiles on Bragg angles at π/2

Giles, C., Cusatis, C.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 595 KB

english, 1991

13

Influence of the negative-U OAs defect in GaAs on the isolation behavior of oxygen-implanted AlGaAs/GaAs heterostructures

Schnell, R. D., Gisdakis, S., Alt, H. Ch.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 674 KB

english, 1991

14

Silicon epitaxial growth on GaAs using a rapid thermal chemical vapor deposition process

Nissim, Y. I., Sapriel, J., Gao, Y., d’Anterroches, C., Regolini, J. L., Bensahel, D.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 655 KB

english, 1991

15

Focused ion beam fabrication of single grain Bi2Sr2Ca1Cu2Ox submicron bridges

Zitkovsky, I. D., Hu, Qing, Orlando, T. P., Melngailis, J., Tao, Tao

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 657 KB

english, 1991

16

Enhanced crystallographic selectivity in molecular beam epitaxial growth of GaAs on mesas and formation of (001)-(111)B facet structures for edge quantum wires

Nakamura, Y., Koshiba, S., Tsuchiya, M., Kano, H., Sakaki, H.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 715 KB

english, 1991

17

Arsenic-doped P-type ZnTe grown by molecular beam epitaxy

Turco-Sandroff, F. S., Brasil, M. J. S. P., Nahory, R. E., Martin, R. J., Zhang, Y., Skromme, B. J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 736 KB

english, 1991

18

High-differential mobility of hot electrons in delta-doped quantum wells

Masselink, W. Ted

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 710 KB

english, 1991

19

Donor-acceptor pair formation in InP doped simultaneously with Si and Zn during metalorganic chemical vapor deposition

Blaauw, C., Hobbs, L.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 508 KB

english, 1991

20

Critical currents and processing of wound coils of Ag-sheathed Bi-2223 high Tc tape: Microstructural and pinning effects

Motowidlo, L. R., Gregory, E., Haldar, P., Rice, J. A., Blaugher, R. D.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 623 KB

english, 1991

21

370 °C clean for Si molecular beam epitaxy using a HF dip

Eaglesham, D. J., Higashi, G. S., Cerullo, M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 636 KB

english, 1991

22

Crystal forms by solid-state recrystallization of amorphous Si films on SiO2

Noma, T., Yonehara, T., Kumomi, H.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 574 KB

english, 1991

23

Novel photoacoustic spectroscopy of semiconductor thin films by a transparent transducer: Pyroelectric and piezoelectric effects

Kanemitsu, Yoshihiko, Nabeta, Hiroyuki

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 566 KB

english, 1991

24

Monolithic integration of a new optoelectronic device based on a modulation-doped heterostructure

Honda, Y., Suemune, I., Yamanishi, M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 582 KB

english, 1991

25

Comparison of the effects of surface passivation and base quasi-electric fields on the current gain of AlGaAs/GaAs heterojunction bipolar transistors grown on GaAs and Si substrates

Liu, William, Costa, Damian, Harris, James

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 589 KB

english, 1991

26

Grating spectrograph in InGaAsP/InP for dense wavelength division multiplexing

Cremer, C., Ebbinghaus, G., Heise, G., Müller-Nawrath, R., Schienle, M., Stoll, L.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 554 KB

english, 1991

27

Characterization of Y-Ba-Cu-O thin films and yttria-stabilized zirconia intermediate layers on metal alloys grown by pulsed laser deposition

Reade, R. P., Mao, X. L., Russo, R. E.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 555 KB

english, 1991

28

Compound formation at the interaction of Pd with strained layers of Si1−xGex epitaxially grown on Si(100)

Buxbaum, A., Eizenberg, M., Raizman, A., Schaffler, F.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 589 KB

english, 1991

29

Residual strain in epitaxially grown ZnSe/GaAs studied by two-photon absorption spectroscopy

Minami, Fujio, Kato, Yukio, Yoshida, Kouji, Inoue, Kuon, Era, Koh

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 556 KB

english, 1991

30

Differential photoreflectance from δ-doped structures and GaAs/n-GaAs interfaces

Sydor, Michael, Badakhshan, Ali, Engholm, James R.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 575 KB

english, 1991

31

Femtosecond refractive-index spectral hole burning in intrinsic and doped GaAs

Gong, T., Mertz, P., Nighan, W. L., Fauchet, P. M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 584 KB

english, 1991

32

Surface modification of Bi-Sr-Ca-Cu-O films deposited in situ by radio frequency plasma flash evaporation with a scanning tunneling microscope

Terashima, Kazuo, Kondoh, Minoru, Takamura, Yuzuru, Komaki, Hisashi, Yoshida, Toyonobu

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 555 KB

english, 1991

33

Noncontacting alternating current surface probe measurements of transport critical currents in a slab geometry

Telschow, K. L., O’Brien, T. K.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 534 KB

english, 1991

34

Interface reaction model for process voiding in aluminum conductor lines

Tseng, W. T., Stark, J. P.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 409 KB

english, 1991

35

Influence of hydrogen passivation on the infrared spectra of Hg0.8Cd0.2Te

Chen, Y. F., Chen, W. S.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 506 KB

english, 1991

36

Ultrafast refractive index dynamics in AlGaAs diode laser amplifiers

Hultgren, C. T., Ippen, E. P.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 651 KB

english, 1991

37

Excimer laser etching of transparent conducting oxides

Lunney, James G., O’Neill, Richard R., Schulmeister, Karl

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 611 KB

english, 1991

38

Oxidation studies of fluorine containing diamond films

Grannen, K. J., Tsu, D. V., Meilunas, R. J., Chang, R. P. H.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 589 KB

english, 1991

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