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Volume 7; Issue 1-2
Main
Radiation Effects
Volume 7; Issue 1-2
Radiation Effects
Volume 7; Issue 1-2
1
The isothermal annealing of boron implanted silicon
Seidel, T. E.
,
Mac Rae, A. U.
Journal:
Radiation Effects
Year:
1971
Language:
english
File:
PDF, 510 KB
Your tags:
english, 1971
2
Lattice location and dopant behavior of group II and VI elements implanted in silicon
Gyulai, J.
,
Meyer, O.
,
Pashley, R. D.
,
Mayer, J. W.
Journal:
Radiation Effects
Year:
1971
Language:
english
File:
PDF, 690 KB
Your tags:
english, 1971
3
Low temperature channeling measurements of ion implantation lattice disorder in single crystal silicon
Picraux, S. T.
,
Weisenbergers, W. H.
,
Vook, F. L.
Journal:
Radiation Effects
Year:
1971
Language:
english
File:
PDF, 691 KB
Your tags:
english, 1971
4
Low energy boron implantation profiles in silicon from junction depth measurements
Sebillotte, P.
,
Badanoiu, M.
,
Ndocko, V. B.
,
Siffert, P.
Journal:
Radiation Effects
Year:
1971
Language:
english
File:
PDF, 574 KB
Your tags:
english, 1971
5
Chemical transport of silicon and germanium during anneal treatment
Sigurd, D.
,
Johansson, N. G. E.
Journal:
Radiation Effects
Year:
1971
Language:
english
File:
PDF, 185 KB
Your tags:
english, 1971
6
Implications of ion implantation technology on ion implanted active devices in silicon
Glotin, P.
,
Bernard, J.
,
Monfret, A.
Journal:
Radiation Effects
Year:
1971
Language:
english
File:
PDF, 685 KB
Your tags:
english, 1971
7
Flux and fluence dependence of disorder produced during implantation of 11 B in silicon
Eisen, F. H.
,
Welch, B.
Journal:
Radiation Effects
Year:
1971
Language:
english
File:
PDF, 516 KB
Your tags:
english, 1971
8
The use of channeling-effect techniques to locate interstitial foreign atoms in silicon
Andersen, J. U.
,
Andreasen, O.
,
Davies, J. A.
,
Uggerh⊘j, E.
Journal:
Radiation Effects
Year:
1971
Language:
english
File:
PDF, 702 KB
Your tags:
english, 1971
9
On the annealing of damage produced by boron ion implantation of silicon single crystals
Chadderton, L. T.
,
Eisen, F. H.
Journal:
Radiation Effects
Year:
1971
Language:
english
File:
PDF, 2.80 MB
Your tags:
english, 1971
10
The electrical behaviour of abrupt ion implanted and diffused P + N junctions
Stephen, J.
,
Grimshaw, J. A.
Journal:
Radiation Effects
Year:
1971
Language:
english
File:
PDF, 3.80 MB
Your tags:
english, 1971
11
The annealing of damage in ion implanted gallium arsenide
Harris, J. S.
,
Eisen, F. H.
Journal:
Radiation Effects
Year:
1971
Language:
english
File:
PDF, 531 KB
Your tags:
english, 1971
12
Spatial distribution of defects in ion bombarded silicon and germanium
B⊘gh, E.
,
H⊘gild, P.
,
Stensgaard, I.
Journal:
Radiation Effects
Year:
1971
Language:
english
File:
PDF, 549 KB
Your tags:
english, 1971
13
Device fabrication by ion implantation
Mac Rae, A. U.
Journal:
Radiation Effects
Year:
1971
Language:
english
File:
PDF, 425 KB
Your tags:
english, 1971
14
Effect of ion-implantation into thermal SiO 2 -films on sodium ion drift
Fritzsche, C.
,
Goetzberger, A.
,
Axmann, A.
,
Rothemund, W.
,
Sixt, G.
Journal:
Radiation Effects
Year:
1971
Language:
english
File:
PDF, 410 KB
Your tags:
english, 1971
15
Preferential etching of ion-bombarded GaAs
Arnold, G. W.
,
Whan, R. E.
Journal:
Radiation Effects
Year:
1971
Language:
english
File:
PDF, 1.53 MB
Your tags:
english, 1971
16
Ion-implanted MOS technology
Dill, H. G.
,
Bower, R. W.
,
Toombs, T. N.
Journal:
Radiation Effects
Year:
1971
Language:
english
File:
PDF, 3.50 MB
Your tags:
english, 1971
17
Ion-implanted planar resistors
Rosendal, Knud
Journal:
Radiation Effects
Year:
1971
Language:
english
File:
PDF, 438 KB
Your tags:
english, 1971
18
Analysis of ion implanted diamond
Davidson, L. A.
,
Chou, S.
,
Gibbons, J. F.
,
Johnson, W. S.
Journal:
Radiation Effects
Year:
1971
Language:
english
File:
PDF, 808 KB
Your tags:
english, 1971
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