Volume 7; Issue 1-2

Radiation Effects

Volume 7; Issue 1-2
1

The isothermal annealing of boron implanted silicon

Year:
1971
Language:
english
File:
PDF, 510 KB
english, 1971
5

Chemical transport of silicon and germanium during anneal treatment

Year:
1971
Language:
english
File:
PDF, 185 KB
english, 1971
6

Implications of ion implantation technology on ion implanted active devices in silicon

Year:
1971
Language:
english
File:
PDF, 685 KB
english, 1971
7

Flux and fluence dependence of disorder produced during implantation of 11 B in silicon

Year:
1971
Language:
english
File:
PDF, 516 KB
english, 1971
9

On the annealing of damage produced by boron ion implantation of silicon single crystals

Year:
1971
Language:
english
File:
PDF, 2.80 MB
english, 1971
10

The electrical behaviour of abrupt ion implanted and diffused P + N junctions

Year:
1971
Language:
english
File:
PDF, 3.80 MB
english, 1971
11

The annealing of damage in ion implanted gallium arsenide

Year:
1971
Language:
english
File:
PDF, 531 KB
english, 1971
12

Spatial distribution of defects in ion bombarded silicon and germanium

Year:
1971
Language:
english
File:
PDF, 549 KB
english, 1971
13

Device fabrication by ion implantation

Year:
1971
Language:
english
File:
PDF, 425 KB
english, 1971
15

Preferential etching of ion-bombarded GaAs

Year:
1971
Language:
english
File:
PDF, 1.53 MB
english, 1971
16

Ion-implanted MOS technology

Year:
1971
Language:
english
File:
PDF, 3.50 MB
english, 1971
17

Ion-implanted planar resistors

Year:
1971
Language:
english
File:
PDF, 438 KB
english, 1971
18

Analysis of ion implanted diamond

Year:
1971
Language:
english
File:
PDF, 808 KB
english, 1971