Support us in the fight for the freedom of knowledge
Sign the petition
Hide info
books search
books
articles search
articles
Donate
Log In
Log In
to access more features
personal recommendations
Telegram Bot
download history
send to Email or Kindle
manage booklists
save to favorites
Explore
Journals
Contribution
Donate
Litera Library
Donate paper books
Add paper books
Open LITERA Point
Volume 40; Issue 3
Main
Russian Microelectronics
Volume 40; Issue 3
Russian Microelectronics
Volume 40; Issue 3
1
Influence of implantation of silicon and oxygen ions into a heteroepitaxial silicon layer on a sapphire substrate on the leakage currents ofn-channel transistors of CMOS IC SOS technology
A. A. Chistilin
,
A. A. Romanov
,
Yu. M. Moskovskaya
,
A. V. Ulanova
Journal:
Russian Microelectronics
Year:
2011
Language:
english
File:
PDF, 227 KB
Your tags:
english, 2011
2
Interrelation of equivalent values for linear energy transfer of heavy charged particles and the energy of focused laser radiation
A. I. Chumakov
Journal:
Russian Microelectronics
Year:
2011
Language:
english
File:
PDF, 248 KB
Your tags:
english, 2011
3
Electrothermal behavior of the elements of SOS CMOS chips
O. A. Gerasimchuk
,
K. A. Epifantsev
,
T. V. Pavlova
,
P. K. Skorobogatov
Journal:
Russian Microelectronics
Year:
2011
Language:
english
File:
PDF, 390 KB
Your tags:
english, 2011
4
CMOS logic elements with increased failure resistance to single-event upsets
S. I. Ol’chev
,
V. Ya. Stenin
Journal:
Russian Microelectronics
Year:
2011
Language:
english
File:
PDF, 249 KB
Your tags:
english, 2011
5
Modeling of recombination in SiO2under the effect of ionizing radiation by the Monte Carlo method
V. A. Polunin
,
A. V. Sogoyan
Journal:
Russian Microelectronics
Year:
2011
Language:
english
File:
PDF, 232 KB
Your tags:
english, 2011
6
Evaluation of resistance of CMOS LSIC to the factor of absorbed dose under the pulsed radiation effect
A. V. Sogoyan
Journal:
Russian Microelectronics
Year:
2011
Language:
english
File:
PDF, 490 KB
Your tags:
english, 2011
7
Features of charge formation and relaxation in SOS structures under the effect of ionizing radiation
A. V. Sogoyan
,
G. G. Davydov
Journal:
Russian Microelectronics
Year:
2011
Language:
english
File:
PDF, 661 KB
Your tags:
english, 2011
8
Memory-cell layout as a factor in the single-event-upset susceptibility of submicron dice CMOS SRAM
V. Ya. Stenin
,
I. G. Cherkasov
Journal:
Russian Microelectronics
Year:
2011
Language:
english
File:
PDF, 273 KB
Your tags:
english, 2011
1
Follow
this link
or find "@BotFather" bot on Telegram
2
Send /newbot command
3
Specify a name for your chatbot
4
Choose a username for the bot
5
Copy an entire last message from BotFather and paste it here
×
×
Support us in the fight for the freedom of knowledge
Sign the petition
Hide info
