Volume 19; Issue 2

Semiconductor Science and Technology

Volume 19; Issue 2

1

GaN etch enhancement in inductively coupled BCl 3 plasma with the addition of N 2 and SF 6 gas

Oh, Chang Seok, Kim, Tai Hong, Lim, Kee Young, Yang, Jeon Wook

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 100 KB

english, 2004

2

Microstructure and cathodoluminescence study of sprayed Al and Sn doped ZnS thin films

Hichou, A El, Addou, M, Bubendorff, J L, Ebothé, J, Idrissi, B El, Troyon, M

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 475 KB

english, 2004

3

Characterization of Ge nanocrystals embedded in SiO 2 by Raman spectroscopy

Serincan, U, Kartopu, G, Guennes, A, Finstad, T G, Turan, R, Ekinci, Y, Bayliss, S C

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 155 KB

english, 2004

4

Optical dispersion in spun nanocrystalline titania thin films

Capan, R, Chaure, N B, Hassan, A K, Ray, A K

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 212 KB

english, 2004

5

Lifetimes of a two-dimensional electron gas in the presence of spin-orbit interaction

Xu, W, Vasilopoulos, P, Wang, X F

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 165 KB

english, 2004

6

Detailed investigation of electron transport, capture and gain in Al 0.3 Ga 0.7 As/GaAs quantum well infrared photodetectors

Cellek, O O, Besikci, C

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 188 KB

english, 2004

7

CdHgSe thin films: preparation, characterization and optoelectronic studies

Hankare, P P, Bhuse, V M, Garadkar, K M, Delekar, S D, Bhagat, P R

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 258 KB

english, 2004

8

Structural and optical properties of chemically deposited CdCr 2 S 4 thin films

Salem, A M, El-Ghazzawi, M E

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 203 KB

english, 2004

9

A novel buried-gate static induction transistor with diffused source region

Wang, Yongshun, Li, Siyuan, Yang, Jianhong, Hu, Dongqing

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 203 KB

english, 2004

10

Comparative secondary ion mass spectroscopy analysis of solar cell structures grown by pulsed laser ablation and ion sputtering

Godines, J A, Villegas, A, Kudriavtsev, Yu, Asomoza, R, Morales-Acevedo, A, Escamilla, A, Arriaga, G, Hernández-Contreras, H, Contreras-Puente, G, Vidal, J, Chavarría, M, Fragoso-Soriano, R

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 317 KB

english, 2004

11

Temperature dependence of reverse bias capacitance–voltage characteristics of Sn/p-GaTe Schottky diodes

Coskun, Cevdet, Aydogan, Sakir, Efeoglu, Hasan

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 176 KB

english, 2004

12

Sub-0.5-µm gate doped-channel field-effect transistors with HEMT-like channel using thermally reflowed photoresist and spin-on glass

Tan, S W, Chen, W T, Chu, M Y, Lour, W S

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 243 KB

english, 2004

13

Transition from two-dimensional to three-dimensional electroabsorption in extremely shallow quantum wells

Chen, X, Allsopp, D W E, Batty, W

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 186 KB

english, 2004

14

Temperature change of Hall and Seebeck coefficient sign in InP doped with transition metals

Gorodynskyy, V, Zdansky, K, Pekárek, L, Vacková, S

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 124 KB

english, 2004

15

Interface roughness scattering limited mobility in AlAs/GaAs, Al 0.3 Ga 0.7 As/GaAs and Ga 0.5 In 0.5 P/GaAs quantum wells

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 115 KB

english, 2004

16

Optical and electrical characterization of annealed silicon-implanted GaN

Wang, H T, Tan, L S, Chor, E F

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 219 KB

english, 2004

17

Compositional and optical uniformity of InGaN layers deposited on (0001) sapphire by metal–organic vapour phase epitaxy

Bosi, M, Fornari, R, Scardova, S, Avella, M, Martínez, O, Jimenez, J

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 570 KB

english, 2004

18

Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 µm

Salhi, A, Rouillard, Y, Pérona, A, Grech, P, Garcia, M, Sirtori, C

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 296 KB

english, 2004

19

Determination of the distribution of electronic states in hydrogenated amorphous germanium by capacitance techniques

Serin, Tülay, Serin, Necmi, Schröder, Bernd

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 150 KB

english, 2004

20

Sputter-deposited metal contacts for n-type GaN

Hall, H P, Awaah, M A, Das, K

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 175 KB

english, 2004

21

Surface-acoustic-wave transducers for the extremely-high-frequency range using AlN/SiC(0001)

Takagaki, Y, Hesjedal, T, Brandt, O, Ploog, K H

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 275 KB

english, 2004

22

Structural properties of nickel silicided Si 1 x Ge x (001) layers

Ok, Young-Woo, Kim, Sang-Hoon, Song, Young-Joo, Shim, Kyu-Hwan, Seong, Tae-Yeon

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 1.34 MB

english, 2004

23

Comprehensive failure analysis of leakage faults in bipolar transistors

Domengès, B, Murray, H, Schwindenhammer, P, Imbert, G

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 207 KB

english, 2004

24

Modelling of the interface states by the multiple-arc method

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 105 KB

english, 2004

25

Impact ionization processes in quantum well infrared photodetector structures

Gendron, L, Berger, V, Vinter, B, Costard, E, Carras, M, Nedelcu, A, Bois, P

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 113 KB

english, 2004

26

Depolarization of the ground state in the quantum Hall ferromagnet and its dependence on g -factor

Zhitomirsky, V, Chughtai, R, Nicholas, R J, Henini, M

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 588 KB

english, 2004