Volume 20; Issue 8

Semiconductor Science and Technology

Volume 20; Issue 8

1

Monte Carlo study of terahertz generation from streaming distribution of two-dimensional electrons in a GaN quantum well

Lü, J T, Cao, J C

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 117 KB

english, 2005

2

Dielectric and infrared properties of TiO2 films containing anatase and rutile

Busani, T, Devine, R A B

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 248 KB

english, 2005

3

High power blue–violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxy

Skierbiszewski, C, Perlin, P, Grzegory, I, Wasilewski, Z R, Siekacz, M, Feduniewicz, A, Wisniewski, P, Borysiuk, J, Prystawko, P, Kamler, G, Suski, T, Porowski, S

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 422 KB

english, 2005

4

2D simulation of static surface states in AlGaN/GaN HEMT and GaN MESFET devices

Tirado, J M, Sanchez-Rojas, J L, Izpura, J I

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 800 KB

english, 2005

5

Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs

Yang, H-P D, Lu, C, Hsiao, R, Chiou, C, Lee, C, Huang, C, Yu, H, Wang, C, Lin, K, Maleev, N A, Kovsh, A R, Sung, C, Lai, C, Wang, J, Chen, J, Lee, T, Chi, J Y

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 220 KB

english, 2005

6

Influence of impurity-free vacancy diffusion on the optical and optoelectronic properties of the In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As multiple quantum wells electroabsorption modulator structure

Yu, J S, Song, J D, Lee, Y T, Lim, H

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 210 KB

english, 2005

7

Relaxed silicon–germanium-on-insulator fabricated by oxygen implantation and oxidation-enhanced annealing

Chen, Zhijun, Zhang, Feng, Chen, Jing, Jin, Bo, Wang, Yongjin, Zhang, Changsheng, Zhang, Zhengxuan, Wang, Xi

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 411 KB

english, 2005

8

The electrical and optical properties of molybdenum-doped indium oxide films grown at room temperature from metallic target

Li, Xifeng, Miao, Weina, Zhang, Qun, Huang, Li, Zhang, Zhuangjian, Hua, Zhongyi

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 405 KB

english, 2005

9

Electrical and structural properties of p-type ZnO:N thin films prepared by plasma enhanced chemical vapour deposition

Xiao, Zhiyan, Liu, Yichun, Zhang, Jiying, Zhao, Dongxu, Lu, Youming, Shen, Dezhen, Fan, Xiwu

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 328 KB

english, 2005

10

PEB bake optimization for process window improvement of mixed iso-dense pattern

Liau, C Y, Lee, C H, Kang, J T, Yoon, S W, Loo, Christopher, Seow, Bertrand, Sheu, W B

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 1.27 MB

english, 2005

11

Organic light-emitting diodes with n-type silicon anode

Ran, G Z, Xu, Y H, Ma, G L, Xu, A G, Qiao, Y P, Chen, W X, Qin, G G

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 121 KB

english, 2005

12

Characterization of electrodeposited Zn 1− x Hg x Se thin films

Mahalingam, T, Kathalingam, A, Velumani, S, Lee, Soonil, Lew, Kyeung Seek, Kim, Yong Deak

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 252 KB

english, 2005

13

Structural and optical properties of GaN/AlGaN multiquantum wells with an AlGaN insertion monolayer in the GaN well

Park, Y S, Park, C M, Lee, S J, Im, Hyunsik, Kang, T W, Oh, Jae-Eung, Kim, Chang Soo, Noh, Sam Kyu

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 612 KB

english, 2005

14

Design and fabrication of pHEMT MMIC switches for IEEE 802.11.a/b/g WLAN applications

Mun, JaeKyoung, Ji, HongGu, Ahn, Hyokyun, Kim, Haecheon, Park, Chong-Ook

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 959 KB

english, 2005

15

Dispersive optical constants and temperature-dependent band gap of cadmium-doped indium selenide thin films

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 723 KB

english, 2005

16

Ohmic contacts on p-type homoepitaxial diamond and their thermal stability

Chen, Yigang, Ogura, Masahiko, Yamasaki, Satoshi, Okushi, Hideyo

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 255 KB

english, 2005

17

Progress in semiconducting oxide-based thin-film transistors for displays

Li, Y J, Kwon, Y W, Jones, M, Heo, Y W, Zhou, J, Luo, S C, Holloway, P H, Douglas, E, Norton, D P, Park, Z, Li, S

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 418 KB

english, 2005

18

Post-growth treatment effects on properties of CuInS 2 thin films deposited by RF reactive sputtering

He, Y B, Krämer, T, Österreicher, I, Polity, A, Meyer, B K, Hardt, M

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 682 KB

english, 2005

19

Below bandgap optical absorption in tellurium-doped GaSb

Chandola, A, Pino, R, Dutta, P S

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 409 KB

english, 2005

20

Nanocrystalline haematite thin films by chemical solution spray

Desai, J D, Pathan, H M, Min, Sun-Ki, Jung, Kwang-Deog, Joo, Oh-Shim

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 581 KB

english, 2005

21

Relocation of surface acoustic waves in Al x Ga 1− x N/GaN bilayer films on SiC substrates

Takagaki, Y, Ploog, K H

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 222 KB

english, 2005

22

Non-empirical prediction of solar cell degradation in space

Makham, S, Zazoui, M, Sun, G C, Bourgoin, J C

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 176 KB

english, 2005

23

Temperature dependence of the photoelectric conversion quantum efficiency of 4H–SiC Schottky UV photodetectors

Blank, T V, Goldberg, Yu A, Kalinina, E V, Konstantinov, O V, Konstantinov, A O, Hallén, A

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 198 KB

english, 2005

24

Electrical and hydrogen sensing characteristics of Pd/ZnO Schottky diodes grown on GaAs

Weichsel, C, Pagni, O, Leitch, A W R

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 216 KB

english, 2005

25

Sol–gel derived nanocrystalline titania thin films on silicon

Chaure, N B, Ray, A K, Capan, R

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 279 KB

english, 2005

26

A simple new way to prepare anatase TiO 2 hydrosol with high photocatalytic activity

Wang, Jing-yu, Yu, Jun-xia, Liu, Zhi-hong, He, Zhi-ke, Cai, Ru-xiu

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 400 KB

english, 2005

27

The origin of low-frequency negative transconductance dispersion in a pseudomorphic HEMT

Balakrishnan, V R, Kumar, Vikram, Ghosh, Subhasis

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 231 KB

english, 2005

28

Electron effective mass in ultrathin oxide silicon MOSFET inversion layers

Dragosavac, M, Paul, D J, Pepper, M, Fowler, A B, Buchanan, D A

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 323 KB

english, 2005

29

d V /d t effect in high-voltage 4H-SiC thyristors

Levinshtein, M E, Ivanov, P A, Mnatsakanov, T T, Yurkov, S N, Agarwal, A K, Palmour, J W

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 118 KB

english, 2005

30

Effect of interfacial resistance and contact size on current crowding at Ni/poly-Si junctions

Liao, Chien-Neng, Chen, Kuan-Chia

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 278 KB

english, 2005

31

Low voltage stress-induced leakage current in 1.4–2.1 nm SiON and HfSiON gate dielectric layers

O'Connor, Robert, McDonnell, Stephen, Hughes, Greg, Degraeve, Robin, Kauerauf, Thomas

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 260 KB

english, 2005

32

Hole spin relaxation: optical deformation potential scattering

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 187 KB

english, 2005

33

Artificial birefringence introduced by porosity in GaP

Ursaki, V V, Syrbu, N N, Albu, S, Zalamai, V V, Tiginyanu, I M, Boyd, Robert W

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 252 KB

english, 2005

34

Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation

Zhao, Q, Pan, J Q, Zhang, J, Zhou, G T, Wu, J, Wang, L F, Wang, W

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 146 KB

english, 2005

35

Halo implant in pseudomorphic SiGe channel p-MOSFET devices to reduce short channel effect

Tang, Y T, Cerrina, C, Waite, A M, Afshar-Hanaee, N, Evans, A G R, Grasby, T J, Parker, E H C, Whall, T E, Norris, D J, Chang, A C K, Cullis, A G

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 332 KB

english, 2005

36

High efficiency polymer electrophosphorescent light-emitting diodes

Gao, Jia, You, Han, Qin, Zhi-Pei, Fang, Junfeng, Ma, Dongge, Zhu, Xuhui, Huang, Wei

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 175 KB

english, 2005

37

Reversible and non-reversible photo-enhanced luminescence in CdSe/ZnS quantum dots

Korsunska, N E, Dybiec, M, Zhukov, L, Ostapenko, S, Zhukov, T

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 232 KB

english, 2005

38

Electrical characterization of NiSi/Si interfaces formed by a single and a two-step rapid thermal silicidation

Jiang, Yu-Long, Ru, Guo-Ping, Huang, Wei, Qu, Xin-Ping, Li, Bing-Zong, Agarwal, Aditya, Cai, Gary, Poate, John, Detavernier, Christophe, Meirhaeghe, R L Van

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 294 KB

english, 2005

39

Interfacial characteristics of fully depleted SiGe-on-insulator (SGOI) substrate fabricated by modified Ge condensation

Di, Zengfeng, Zhang, Miao, Liu, Weili, Luo, Suhua, Song, Zhitang, Lin, Chenglu, Lin, Qing, Chu, Paul K

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 331 KB

english, 2005

40

1/ f noise and dye-sensitized solar cells

Jayaweera, P V V, Pitigala, P K D D P, Perera, A G U, Tennakone, K

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 88 KB

english, 2005

41

8 µm strain-compensated quantum cascade laser operating at room temperature

Guo, Yu, Liu, F Q, Liu, J Q, Li, C M, Wang, Z G

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 175 KB

english, 2005

42

Low-intensity ultraviolet light detector using a surface acoustic wave oscillator based on ZnO/LiNbO 3 bilayer structure

Kumar, Sanjeev, Sharma, Parmanand, Sreenivas, K

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 136 KB

english, 2005

43

Monolithically integrated laser diode and electroabsorption modulator with dual-waveguide spot-size converter input and output

Hou, Lianping, Wang, Wei, Zhu, Hongliang, Zhou, Fan, Wang, Lufeng, Bian, Jing

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 230 KB

english, 2005

44

Improving the efficiency of CdS/CdTe solar cells by varying the thiourea/CdCl 2 ratio in the CdS chemical bath

Vigil-Galán, O, Arias-Carbajal, A, Mendoza-Pérez, R, Santana-Rodríguez, G, Sastre-Hernández, J, Alonso, J C, Moreno-García, E, Contreras-Puente, G, Morales-Acevedo, A

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 105 KB

english, 2005

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