Volume 26; Issue 7

Semiconductor Science and Technology

Volume 26; Issue 7

1

Electrical properties, microstructure, and thermal stability of Ta-based ohmic contacts annealed at low temperature for GaN HEMTs

Malmros, A, Blanck, H, Rorsman, N

Journal:

Semiconductor Science and Technology

Year:

2011

Language:

english

File:

PDF, 751 KB

english, 2011

2

Demonstration of a single-mesa vertical coupler and its integration with a multimode interferometer

Lee, Chee-Wei, Lee, Shuh-Ying, Chin, Mee-Koy

Journal:

Semiconductor Science and Technology

Year:

2011

Language:

english

File:

PDF, 510 KB

english, 2011

3

Defect evolution during catastrophic optical damage of diode lasers

Hempel, Martin, La Mattina, Fabio, Tomm, Jens W, Zeimer, Ute, Broennimann, Rolf, Elsaesser, Thomas

Journal:

Semiconductor Science and Technology

Year:

2011

Language:

english

File:

PDF, 1.63 MB

english, 2011

4

High-performance local back gate thin-film field-effect transistors using sorted carbon nanotubes on an amino-silane treated hafnium oxide surface

Narasimhamurthy, K C, Paily, Roy

Journal:

Semiconductor Science and Technology

Year:

2011

Language:

english

File:

PDF, 1.09 MB

english, 2011

5

Te doping in the GaAs tunnel junction for GaInP/GaAs tandem solar cells

Kang, Ho Kwan, Park, Sang-Hyuk, Jun, Dong Hwan, Kim, Chang Zoo, Song, Keun Man, Park, Wonkyu, Ko, Chul Gi, Kim, Hogyoung

Journal:

Semiconductor Science and Technology

Year:

2011

Language:

english

File:

PDF, 600 KB

english, 2011

6

Voltage-controlled spin precession in InAs quantum wells

Sun, B Y, Zhang, P, Wu, M W

Journal:

Semiconductor Science and Technology

Year:

2011

Language:

english

File:

PDF, 305 KB

english, 2011

7

Diode ideality factor in modern light-emitting diodes

Journal:

Semiconductor Science and Technology

Year:

2011

Language:

english

File:

PDF, 426 KB

english, 2011

8

Ultra-low resistive GaSb/InAs tunnel junctions

Vizbaras, Kristijonas, Törpe, Marcel, Arafin, Shamsul, Amann, Markus-Christian

Journal:

Semiconductor Science and Technology

Year:

2011

Language:

english

File:

PDF, 407 KB

english, 2011

9

Radiative power of a dipole in the proximity of a dielectric interface: a case study of a quantum-dot exciton transition dipole

Komarala, Vamsi K, Xiao, Min

Journal:

Semiconductor Science and Technology

Year:

2011

Language:

english

File:

PDF, 218 KB

english, 2011

10

High-performance poly-silicon TFTs with high- k Y 2 O 3 gate dielectrics

Pan, Tung-Ming, Chang, Chih-Jen

Journal:

Semiconductor Science and Technology

Year:

2011

Language:

english

File:

PDF, 413 KB

english, 2011

11

Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation

Hui, Li, Kai, Zhou, Jingbiao, Pang, Yundong, Shao, Zhu, Wang, Youwen, Zhao

Journal:

Semiconductor Science and Technology

Year:

2011

Language:

english

File:

PDF, 1.82 MB

english, 2011

12

The influence of argon pressure and RF power on the growth of InP thin films

Chandra, G Hema, de la Cruz, J Pérez, Ventura, J

Journal:

Semiconductor Science and Technology

Year:

2011

Language:

english

File:

PDF, 830 KB

english, 2011

13

Reduced microwave attenuation in coplanar waveguides using deep level impurity compensated Czochralski-silicon substrates

Abuelgasim, A, Mallik, K, Ashburn, P, Jordan, D M, Wilshaw, P R, Falster, R J, de Groot, C H

Journal:

Semiconductor Science and Technology

Year:

2011

Language:

english

File:

PDF, 499 KB

english, 2011

14

Design and optimization of different P-channel LUDMOS architectures on a 0.18 µm SOI-CMOS technology

Cortés, I, Toulon, G, Morancho, F, Hugonnard-Bruyere, E, Villard, B, Toren, W J

Journal:

Semiconductor Science and Technology

Year:

2011

Language:

english

File:

PDF, 597 KB

english, 2011

15

From nanoparticle chains to nanorods: control of ZnO nanostructures by laser ablation

Waller, Gordon Henry, Du, Xi-Wen

Journal:

Semiconductor Science and Technology

Year:

2011

Language:

english

File:

PDF, 1.72 MB

english, 2011

16

Simulations of the optical properties of broad-area edge-emitting semiconductor lasers at 1060 nm based on the PBC laser concept

Kalosha, V P, Posilovic, K, Kettler, T, Shchukin, V A, Ledentsov, N N, Bimberg, D

Journal:

Semiconductor Science and Technology

Year:

2011

Language:

english

File:

PDF, 2.04 MB

english, 2011

17

Forward- and reverse-biased electroluminescence behavior of chemically fabricated ZnO nanotubes/GaN interface

Sadaf, J R, Israr, M Q, Kishwar, S, Nur, O, Willander, M

Journal:

Semiconductor Science and Technology

Year:

2011

Language:

english

File:

PDF, 5.91 MB

english, 2011

18

Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy

Yang, Xiaoguang, Yang, Tao, Wang, Kefan, Ji, Haiming, Ni, Haiqiao, Niu, Zhichuan, Wang, Zhanguo

Journal:

Semiconductor Science and Technology

Year:

2011

Language:

english

File:

PDF, 3.55 MB

english, 2011

19

THz generation from a nanocrystalline silicon-based photoconductive device

Daghestani, N S, Persheyev, S, Cataluna, M A, Ross, G, Rose, M J

Journal:

Semiconductor Science and Technology

Year:

2011

Language:

english

File:

PDF, 1.17 MB

english, 2011

20

Contactless electroreflectance of ZnO layers grown by atomic layer deposition at low temperature

Kudrawiec, R, Misiewicz, J, Wachnicki, Ł, Guziewicz, E, Godlewski, M

Journal:

Semiconductor Science and Technology

Year:

2011

Language:

english

File:

PDF, 928 KB

english, 2011

21

Optical gain of compressively strained InGaAs/InP multiple quantum wires

Park, Seoung-Hwan, Shim, Jong-In, Yi, Sam Nyung

Journal:

Semiconductor Science and Technology

Year:

2011

Language:

english

File:

PDF, 2.80 MB

english, 2011

22

Bipolar and unipolar resistive switching behaviors of sol–gel-derived SrTiO 3 thin films with different compliance currents

Tang, M H, Wang, Z P, Li, J C, Zeng, Z Q, Xu, X L, Wang, G Y, Zhang, L B, Xiao, Y G, Yang, S B, Jiang, B, He, J

Journal:

Semiconductor Science and Technology

Year:

2011

Language:

english

File:

PDF, 602 KB

english, 2011

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