Volume 27; Issue 10

Semiconductor Science and Technology

Volume 27; Issue 10

1

High-density oxidized porous silicon

Gharbi, Ahmed, Remaki, Boudjemaa, Halimaoui, Aomar, Bensahel, Daniel, Souifi, Abdelkader

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 370 KB

english, 2012

2

Intrinsic limit to low-temperature mobility in semiconductor structures with two-dimensional electrons

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 390 KB

english, 2012

3

Flexible organic/inorganic hybrid solar cells based on conjugated polymer and ZnO nanorod array

Tong, Fei, Kim, Kyusang, Martinez, Daniel, Thapa, Resham, Ahyi, Ayayi, Williams, John, Kim, Dong-Joo, Lee, Sungkoo, Lim, Eunhee, Lee, Kyeong K, Park, Minseo

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 465 KB

english, 2012

4

Gate-controllable negative differential conductance in graphene tunneling transistors

Nguyen, V Hung, Niquet, Y M, Dollfus, P

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 1.16 MB

english, 2012

5

Elastic-relaxation-induced barrier layer thickness undulations in InP/GaAs type-II quantum well superlattice structures

Singh, S D, Kumar, Ravi, Mukherjee, C, Mondal, Pushpen, Srivastava, A K, Ganguli, Tapas, Sharma, T K, Oak, S M

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 2.13 MB

english, 2012

6

Semiconductor band gap localization via Gaussian function

Ullrich, B, Brown, G J, Xi, H

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 404 KB

english, 2012

7

Thermal annealing of molecular beam epitaxy-grown InGaN/GaN single quantum well

Kaufmann, Nils A K, Dussaigne, Amélie, Martin, Denis, Valvin, Pierre, Guillet, Thierry, Gil, Bernard, Ivaldi, Francesco, Kret, Slawomir, Grandjean, Nicolas

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 1.33 MB

english, 2012

8

Structure characterization of hard materials by precession electron diffraction and automatic diffraction tomography: 6H–SiC semiconductor and Ni 1+ x Te 1 embedded nanodomains

Sarakinou, E, Mugnaioli, E, Lioutas, Ch B, Vouroutzis, N, Frangis, N, Kolb, U, Nikolopoulos, S

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 970 KB

english, 2012

9

Electronic and optical properties of non-uniformly shaped InAs/InP quantum dashes

Kaczmarkiewicz, Piotr, Machnikowski, Paweł

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 561 KB

english, 2012

10

Low-temperature, facile fabrication of ultrafine Cu 2 O networks by anodization on TiO 2 nanotube arrays

Luo, S L, Li, Y, Yang, L X, Liu, C B, Su, F, Chen, Y

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 1.75 MB

english, 2012

11

Fabrication of amorphous InGaZnO thin-film transistor-driven flexible thermal and pressure sensors

Park, Ick-Joon, Jeong, Chan-Yong, Cho, In-Tak, Lee, Jong-Ho, Cho, Eou-Sik, Kwon, Sang Jik, Kim, Bosul, Cheong, Woo-Seok, Song, Sang-Hun, Kwon, Hyuck-In

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 658 KB

english, 2012

12

Catastrophic optical bulk damage in InP 7xx emitting quantum dot diode lasers

Elliott, Stella N, Hempel, Martin, Zeimer, Ute, Smowton, Peter M, Tomm, Jens W

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 563 KB

english, 2012

13

First-principles study of spontaneous polarization and band gap bowing in Sc x Al y Ga 1 − x − y N alloys lattice-matched to GaN

Shimada, Kazuhiro, Takouda, Masahiro, Hashiguchi, Yuuki, Chichibu, Shigefusa F, Hata, Masahiro, Sazawa, Hiroyuki, Takada, Tomoyuki, Sota, Takayuki

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 662 KB

english, 2012

14

Electrical transport in InAs/GaSb superlattice: role of surface states and interface roughness

Rao, T V Chandrasekhar, Nair, Selvakumar V, Ruda, Harry E, Antoszewski, J, Rodriguez, J B, Plis, E, Krishna, S, Faraone, L

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 390 KB

english, 2012

15

Effect of low constant current stress treatment on the performance of the Cu/ZrO 2 /Pt resistive switching device

Xie, Hongwei, Liu, Qi, Li, Yingtao, Lv, Hangbing, Wang, Ming, Zhang, Kangwei, Long, Shibing, Liu, Su, Liu, Ming

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 469 KB

english, 2012

16

Interfacial Al segregation limiting electron mobility at the inverted interface of AlGaAs/GaAs quantum well

Sadeghzadeh, Mohammad Ali, Azizi, Seied Mortaza

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 633 KB

english, 2012

17

Shape-dependent electrical property of solution synthesized ZnO nanorods

Kathalingam, A, Senthilkumar,, Valanarasu, S, Rhee, Jin-Koo

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 1.12 MB

english, 2012

18

Height-driven linear polarization of the surface emission from quantum dashes

Musiał, Anna, Podemski, Paweł, Sęk, Grzegorz, Kaczmarkiewicz, Piotr, Andrzejewski, Janusz, Machnikowski, Paweł, Misiewicz, Jan, Hein, Sebastian, Somers, Andre, Höfling, Sven, Reithmaier, Johann Peter,

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 533 KB

english, 2012

19

Photoconductivity peculiarities in InGaAs quantum wire heterostructures: anisotropy and high photoresponsivity at room temperature

Kondratenko, S V, Vakulenko, O V, Kunets, Vas P, Mazur, Yu I, Dorogan, V G, Ware, M E, Salamo, G J

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 352 KB

english, 2012

20

Insights into semiconductor nanowire conductivity using electrodeposition

Liu, C, Salehzadeh, O, Poole, P J, Watkins, S P, Kavanagh, K L

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 1.20 MB

english, 2012

21

Effects of a key deep level and interface states on the performance of GaAsN solar cells: a simulation analysis

Han, Xiuxun, Hwang, Jong-Ha, Kojima, Nobuaki, Ohshita, Yoshio, Yamaguchi, Masafumi

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 807 KB

english, 2012

22

Time-resolved photoluminescence studies of the optical quality of InGaN/GaN multi-quantum well grown by MOCVD—antimony surfactant effect

Baranowski, M, Latkowska, M, Kudrawiec, R, Syperek, M, Misiewicz, J, Sadasivam, K Giri, Shim, J, Lee, J K

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 578 KB

english, 2012

23

Transient thermal characterization of organic light-emitting diodes

Yang, Lianqiao, Wei, Bin, Zhang, Jianhua

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 624 KB

english, 2012

24

Non-uniform distribution of induced strain in a gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements

Mikulics, M, Hardtdegen, H, Gregušová, D, Sofer, Z, Šimek, P, Trellenkamp, St, Grützmacher, D, Lüth, H, Kordoš, P, Marso, M

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 68 KB

english, 2012

25

A non-parabolic single-band tight binding approach: capturing conduction band bending, charge accumulation and quantization at non-polar InN surfaces

Bevan, Kirk H, Hossain, Md Sazzad

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 257 KB

english, 2012

26

Electronic structure and optical properties of 1.55 µm emitting InAs/InGaAsP quantum dash tunnel injection structures

Rudno-Rudziński, W, Sęk, G, Andrzejewski, J, Misiewicz, J, Lelarge, F, Rousseau, B

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 597 KB

english, 2012

27

Starting layer dependence of the atomic-layer-deposited HfAlO x films on GaAs

Byun, Young-Chul, Mahata, Chandreswar, An, Chee-Hong, Kim, Hyoungsub

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 118 KB

english, 2012

28

Experimental and theoretical study of finite-aperture tapered unstable resonator lasers

Spreemann, Martin, Fricke, Jörg, Wenzel, Hans, Erbert, Götz

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 1.32 MB

english, 2012

29

Improving the breakdown voltage, ON-resistance and gate-charge of InGaAs LDMOS power transistors

Kumar, M Jagadesh, Bansal, Avikal

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 456 KB

english, 2012

30

Auger de-excitation of different Er centers in Si:Er layers grown with sublimation molecular beam epitaxy

Kudryavtsev, K E, Shmagin, V B, Shengurov, D V, Krasilnik, Z F

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 40 KB

english, 2012

31

Organic photovoltaic devices with the bilayer cathode interfacial structure of pyromellitic dianhydride and lithium fluoride

Nam, Eunkyoung, Oh, Seungsik, Jung, Donggeun, Kim, Hyoungsub, Chae, Heeyeop, Yi, Junsin

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 304 KB

english, 2012

32

Improved photoresponse characteristics in Se-doped Si photodiodes fabricated using picosecond pulsed laser mixing

Hu, Shaoxu, Han, Peide, Wang, Shuai, Mao, Xue, Li, Xinyi, Gao, Lipeng

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 233 KB

english, 2012

33

Flexible metal–insulator–metal capacitors on polyethylene terephthalate plastic substrates

Hota, M K, Bera, M K, Maiti, C K

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 1.43 MB

english, 2012

34

A novel pLEDMOS device with large current capability and high reliability for PDP scan driver IC

Liu, Si-Yang, Sun, Wei-Feng, Ye, Chu-Chu, Tang, Zheng-Hua, Qian, Qin-Song

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 418 KB

english, 2012

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