Volume 35; Issue 7

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Semiconductors
Volume 35; Issue 7

Semiconductors

Volume 35; Issue 7

1

Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles

V. A. Kozlov, V. V. Kozlovski

Journal:

Year:

2001

Language:

english

File:

PDF, 280 KB

english, 2001

2

The microstructure and physical properties of thin SnO2films

S. I. Rembeza, T. V. Svistova, E. S. Rembeza, O. I. Borsyakova

Journal:

Year:

2001

Language:

english

File:

PDF, 233 KB

english, 2001

3

The accuracy of reconstructing the semiconductor doping profile from capacitance-voltage characteristics measured during electrochemical etching

I. R. Karetnikova, I. M. Nefedov, V. I. Shashkin

Journal:

Year:

2001

Language:

english

File:

PDF, 83 KB

english, 2001

4

Optical properties of Cd1−xZnxTe (0

A. I. Belogorokhov, V. M. Lakeenkov, L. I. Belogorokhova

Journal:

Year:

2001

Language:

english

File:

PDF, 55 KB

english, 2001

5

Metallic conductivity over an acceptor band of lightly compensated copper-dopedp-Hg0.78Cd0.22Te crystals

V. V. Bogoboyashchii

Journal:

Year:

2001

Language:

english

File:

PDF, 93 KB

english, 2001

6

Fermi level pinning and electrical properties of irradiated CdxHg1−xTe alloys

V. N. Brudnyi, S. N. Grinyaev

Journal:

Year:

2001

Language:

english

File:

PDF, 55 KB

english, 2001

7

Effect of ballistic electron transport in metal-n-GaAs-n+-GaAs Schottky-barrier structures

Journal:

Year:

2001

Language:

english

File:

PDF, 102 KB

english, 2001

8

Calculation of the variation in the work function caused by adsorption of metal atoms on semiconductors

S. Yu. Davydov, A. V. Pavlyk

Journal:

Year:

2001

Language:

english

File:

PDF, 45 KB

english, 2001

9

Charge transport in HgCdTe-basedn+-pphotodiodes

J. V. Gumenjuk-Sichevskaja, F. F. Sizov, V. N. Ovsyuk, V. V. Vasil’ev, D. G. Esaev

Journal:

Year:

2001

Language:

english

File:

PDF, 96 KB

english, 2001

10

Electronic state mixing inXxandXyvalleys in AlAs/GaAs (001)

G. F. Karavaev, V. N. Chernyshov

Journal:

Year:

2001

Language:

english

File:

PDF, 110 KB

english, 2001

11

Adsorption-based porosimetry using capacitance measurements

E. A. Tutov, A. Yu. Andryukov, E. N. Bormontov

Journal:

Year:

2001

Language:

english

File:

PDF, 52 KB

english, 2001

12

Structural transformations and silicon nanocrystallite formation in SiOxfilms

V. Ya. Bratus’, V. A. Yukhimchuk, L. I. Berezhinsky, M. Ya. Valakh, I. P. Vorona, I. Z. Indutnyi, T. T. Petrenko, P. E. Shepeliavyi, I. B. Yanchuk

Journal:

Year:

2001

Language:

english

File:

PDF, 96 KB

english, 2001

13

Luminescence spectra and efficiency of GaN-based quantum-well heterostructure light emitting diodes: Current and voltage dependence

V. E. Kudryashov, S. S. Mamakin, A. N. Turkin, A. É. Yunovich, A. N. Kovalev, F. I. Manyakhin

Journal:

Year:

2001

Language:

english

File:

PDF, 134 KB

english, 2001

14

Interaction of metal nanoparticles with a semiconductor in surface-doped gas sensors

S. V. Ryabtsev, E. A. Tutov, E. N. Bormontov, A. V. Shaposhnik, A. V. Ivanov

Journal:

Year:

2001

Language:

english

File:

PDF, 59 KB

english, 2001

15

Cross-sectional electrostatic force microscopy of semiconductor laser diodes

A. V. Ankudinov, E. Yu. Kotel’nikov, A. A. Kantsel’son, V. P. Evtikhiev, A. N. Titkov

Journal:

Year:

2001

Language:

english

File:

PDF, 371 KB

english, 2001

16

Comparative analysis of long-wavelength (1.3 µm) VCSELs on GaAs substrates

N. A. Maleev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, A. P. Vasil’ev, V. M. Ustinov, N. N. Ledentsov, Zh. I. Alferov

Journal:

Year:

2001

Language:

english

File:

PDF, 91 KB

english, 2001

17

1.3 µm vertical microcavities with InAs/InGaAs quantum dots and devices based on them

A. V. Sakharov, I. L. Krestnikov, N. A. Maleev, A. R. Kovsh, A. E. Zhukov, A. F. Tsatsul’nikov, V. M. Ustinov, N. N. Ledentsov, D. Bimberg, J. A. Lott, Zh. I. Alferov

Journal:

Year:

2001

Language:

english

File:

PDF, 97 KB

english, 2001

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