Volume 37; Issue 6

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Semiconductors
Volume 37; Issue 6

Semiconductors

Volume 37; Issue 6

1

Effect of highly nonequilibrium conditions on the stoichiometry of cadmium telluride layer obtained by vapor-phase condensation

A. P. Belyaev, V. P. Rubets, M. Yu. Nuzhdin, I. P. Kalinkin

Journal:

Year:

2003

Language:

english

File:

PDF, 61 KB

english, 2003

2

Hydrogen-induced splitting in silicon over a buried layer heavily doped with boron

D. V. Kilanov, V. P. Popov, L. N. Safronov, A. I. Nikiforov, R. Sholz

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Year:

2003

Language:

english

File:

PDF, 216 KB

english, 2003

3

A model of reduction of oxidation-enhanced diffusion in heavily doped Si layers

O. V. Aleksandrov, N. N. Afonin

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Year:

2003

Language:

english

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PDF, 96 KB

english, 2003

4

Defect profiling in semiconductor layers by the electrochemical method

Á. Nemcsics, J. P. Makai

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Year:

2003

Language:

english

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PDF, 97 KB

english, 2003

5

X-ray photoelectron spectroscopy and X-ray electron-microprobe analysis of single crystals based on bismuth telluride

I. V. Gasenkova, V. A. Chubarenko, E. A. Tyavlovskaya, T. E. Svechnikova

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Year:

2003

Language:

english

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PDF, 65 KB

english, 2003

6

Photovoltaic effects in CdV2S4single crystals and structures based on them

A. A. Vaipolin, Yu. A. Nikolaev, I. K. Polushina, V. Yu. Rud’, Yu. V. Rud’, E. I. Terukov, N. Fernelius

Journal:

Year:

2003

Language:

english

File:

PDF, 76 KB

english, 2003

7

Electrical properties of cadmium telluride films synthesized in a thermal field with a temperature gradient

A. P. Belyaev, V. P. Rubets, M. Yu. Nuzhdin

Journal:

Year:

2003

Language:

english

File:

PDF, 65 KB

english, 2003

8

The effects of monovacancies on the terrace width during sublimation from the (111) surface of a diamond-like crystal

A. V. Zverev, I. G. Neizvestny, N. L. Shvartz, Z. Sh. Yanovitskaja

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Year:

2003

Language:

english

File:

PDF, 350 KB

english, 2003

9

Fabrication and properties of ZnFe2S4single crystals and structures based on them

A. A. Vaipolin, Yu. A. Nikolaev, I. K. Polushina, V. Yu. Rud’, Yu. V. Rud’, E. I. Terukov, N. Fernelius

Journal:

Year:

2003

Language:

english

File:

PDF, 80 KB

english, 2003

10

Determination of the absolute value of the semiconductor surface potential by the quasi-static capacitance-voltage characteristics of an MIS structure

A. G. Zhdan, N. F. Kukharskaya, G. V. Chucheva

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Year:

2003

Language:

english

File:

PDF, 91 KB

english, 2003

11

Atomic-force-microscopy visualization of GeSi buried nanoislands on crystal cleavages in silicon structures

M. S. Dunaevskii, Z. F. Krasil’nik, D. N. Lobanov, A. V. Novikov, A. N. Titkov, R. Laiho

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Year:

2003

Language:

english

File:

PDF, 227 KB

english, 2003

12

Determination of the parameters of multilayer nanostructures using two-wave X-ray reflectometry

N. L. Popov, Yu. A. Uspenskii, A. G. Turyanskii, I. V. Pirshin, A. V. Vinogradov, Yu. Ya. Platonov

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Year:

2003

Language:

english

File:

PDF, 90 KB

english, 2003

13

Superradiance in quantum heterostructures

A. I. Klimovskaya, Yu. A. Driga, E. G. Gule, O. O. Pikaruk

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Year:

2003

Language:

english

File:

PDF, 76 KB

english, 2003

14

Electron transport in coupled quantum wells with double-Sided doping

G. B. Galiev, V. E. Kaminskii, V. G. Mokerov, V. A. Kul’bachinskii, R. A. Lunin, I. S. Vasil’evskii, A. V. Derkach

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Year:

2003

Language:

english

File:

PDF, 79 KB

english, 2003

15

Zero bias anomalies of transport characteristics of single-barrier GaAs/AlAs/GaAs heterostructures as a result of resonance tunneling between parallel two-dimensional electron gases and suppression of resonance tunneling in a magnetic field as a manifestation of the Coulomb gap in the tunnel density of states

Yu. N. Khanin, Yu. V. Dubrovskii, E. E. Vdovin

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Year:

2003

Language:

english

File:

PDF, 100 KB

english, 2003

16

Low-temperature anti-Stokes photoluminescence in CdSe/ZnSe nanostructures

M. Ya. Valakh, N. V. Vuychik, V. V. Strelchuk, S. V. Sorokin, T. V. Shubina, S. V. Ivanov, P. S. Kop’ev

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Year:

2003

Language:

english

File:

PDF, 79 KB

english, 2003

17

Nonohmic conductivity under transition from weak to strong localization in GaAs/InGaAs structures with a two-dimensional electron gas

A. A. Sherstobitov, G. M. Minkov, O. É. Rut, A. V. Germanenko, B. N. Zvonkov, E. A. Uskova, A. A. Biryukov

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Year:

2003

Language:

english

File:

PDF, 73 KB

english, 2003

18

On the temperature dependence of the dc conductivity of a semiconductor quantum wire in an insulator

N. A. Poklonskii, E. F. Kislyakov, S. A. Vyrko

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Year:

2003

Language:

english

File:

PDF, 48 KB

english, 2003

19

The effect of implantation of P ions on the photoluminescence of Si nanocrystals in SiO2layers

G. A. Kachurin, S. G. Yanovskaya, D. I. Tetelbaum, A. N. Mikhailov

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Year:

2003

Language:

english

File:

PDF, 77 KB

english, 2003

20

Interband absorption of light in semiconductor nanostructures

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Year:

2003

Language:

english

File:

PDF, 61 KB

english, 2003

21

Modification of the nanostructure of diamond-like carbon films by bombardment with xenon ions

I. A. Faizrakhmanov, V. V. Bazarov, A. L. Stepanov, I. B. Khaibullin

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Year:

2003

Language:

english

File:

PDF, 60 KB

english, 2003

22

Effect of illumination on the rate of relaxation of light-induced metastable states ina-Si:H(B)

I. A. Kurova, N. N. Ormont, A. L. Gromadin

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Year:

2003

Language:

english

File:

PDF, 45 KB

english, 2003

23

Efficient silicon light-emitting diode with temperature-stable spectral characteristics

A. M. Emel’yanov, N. A. Sobolev, T. M. Mel’nikova, S. Pizzini

Journal:

Year:

2003

Language:

english

File:

PDF, 85 KB

english, 2003

24

Mid-infrared (λ=2.775 µm) injection laser based on AlGaAsSb/InAs/CdMgSe hybrid double heterostructure grown by molecular-beam epitaxy

S. V. Ivanov, K. D. Moiseev, V. A. Kaigorodov, V. A. Solov’ev, S. V. Sorokin, B. Ya. Meltser, E. A. Grebenshchikova, I. V. Sedova, Ya. V. Terent’ev, A. N. Semenov, A. P. Astakhova, M. P. Mikhailova, A

Journal:

Year:

2003

Language:

english

File:

PDF, 89 KB

english, 2003