Volume 44; Issue 6

Main
Semiconductors
Volume 44; Issue 6

Semiconductors

Volume 44; Issue 6

1

Specific features of formation and evolution of a longitudinal autosoliton inp-InSb in a longitudinal magnetic field

I. K. Kamilov, A. A. Stepurenko, A. E. Gummetov

Journal:

Year:

2010

Language:

english

File:

PDF, 302 KB

english, 2010

2

Features of the mechanism of electrical conductivity of semiinsulating CdTe crystals

L. A. Kosyachenko, O. L. Maslyanchuk, S. V. Melnychuk, V. M. Sklyarchuk, O. V. Sklyarchuk, T. Aoki

Journal:

Year:

2010

Language:

english

File:

PDF, 232 KB

english, 2010

3

Spin-peierls transition in the random impurity sublattice of a semiconductor

A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, S. I. Goloshchapov

Journal:

Year:

2010

Language:

english

File:

PDF, 227 KB

english, 2010

4

Doping of IV-VI semiconductors and the energy spectrum of holes with resonance states taken into account

L. V. Prokofieva, Yu. I. Ravich, D. A. Pshenay-Severin, P. P. Konstantinov, A. A. Shabaldin

Journal:

Year:

2010

Language:

english

File:

PDF, 245 KB

english, 2010

5

The effects of defects on electrical properties of Ag2S at phase transition

F. F. Aliev, M. B. Jafarov, V. I. Eminova

Journal:

Year:

2010

Language:

english

File:

PDF, 163 KB

english, 2010

6

Innovations in X-ray-induced electron emission spectroscopy (XIEES)

K. Ju. Pogrebitsky, M. D. Sharkov

Journal:

Year:

2010

Language:

english

File:

PDF, 921 KB

english, 2010

7

Influence of impurities on the thermoelectric properties of layered anisotropic PbBi4Te7compound: Experiment and calculations

M. K. Zhitinskaya, S. A. Nemov, A. A. Muhtarova, L. E. Shelimova, T. E. Svechnikova, P. P. Konstantinov

Journal:

Year:

2010

Language:

english

File:

PDF, 218 KB

english, 2010

8

Phonon drag of electrons in Ag2S

S. A. Aliev, F. F. Aliev, Z. S. Gasanov, S. M. Abdullayev, R. I. Selim-zade

Journal:

Year:

2010

Language:

english

File:

PDF, 143 KB

english, 2010

9

Nature of forward and reverse saturation currents in metal—semiconductor contacts with the Schottky barrier

Journal:

Year:

2010

Language:

english

File:

PDF, 539 KB

english, 2010

10

Effect of microwave treatment on current flow mechanisms in Au-TiBx-Al-Ti-n+-n-n+-GaN-Al2O3ohmic contacts

A. E. Belyaev, N. S. Boltovets, S. A. Vitusevich, V. N. Ivanov, R. V. Konakova, Ya. Ya. Kudryk, A. A. Lebedev, V. V. Milenin, Yu. N. Sveshnikov, V. N. Sheremet

Journal:

Year:

2010

Language:

english

File:

PDF, 968 KB

english, 2010

11

Mechanism of compensation of the donor impurity in the near-surface layer of gap during heat treatment in phosphorus vapors

Yu. K. Krutogolov

Journal:

Year:

2010

Language:

english

File:

PDF, 217 KB

english, 2010

12

Wannier-Stark states in a superlattice of InAs/GaAs quantum dots

M. M. Sobolev, A. P. Vasil’ev, V. N. Nevedomskii

Journal:

Year:

2010

Language:

english

File:

PDF, 388 KB

english, 2010

13

Vibronic properties of organic semiconductors based on phthalocyanine complexes with asymmetrically distributed electron density

I. A. Belogorokhov, M. N. Martishov, D. A. Mamichev, M. A. Dronov, V. E. Pushkarev, Yu. V. Ryabchikov, P. A. Forsh, L. G. Tomilova, D. R. Khokhlov

Journal:

Year:

2010

Language:

english

File:

PDF, 198 KB

english, 2010

14

Application of ITO/Al reflectors for increasing the efficiency of single-crystal silicon solar cells

V. R. Kopach, M. V. Kirichenko, G. S. Khrypunov, R. V. Zaitsev

Journal:

Year:

2010

Language:

english

File:

PDF, 173 KB

english, 2010

15

A high-temperature radiation-resistant rectifier based on p+-n junctions in 4H-SiC ion-implanted with aluminum

E. V. Kalinina, V. G. Kossov, R. R. Yafaev, A. M. Strel’chuk, G. N. Violina

Journal:

Year:

2010

Language:

english

File:

PDF, 280 KB

english, 2010

16

Pulsed semiconductor lasers with higher optical strength of cavity output mirrors

A. N. Petrunov, A. A. Podoskin, I. S. Shashkin, S. O. Slipchenko, N. A. Pikhtin, T. A. Nalet, N. V. Fetisova, L. S. Vavilova, A. V. Lyutetskiy, P. A. Alekseev, A. N. Titkov, I. S. Tarasov

Journal:

Year:

2010

Language:

english

File:

PDF, 548 KB

english, 2010

17

Mechanism of the GaN LED efficiency falloff with increasing current

N. I. Bochkareva, V. V. Voronenkov, R. I. Gorbunov, A. S. Zubrilov, Y. S. Lelikov, F. E. Latyshev, Y. T. Rebane, A. I. Tsyuk, Y. G. Shreter

Journal:

Year:

2010

Language:

english

File:

PDF, 213 KB

english, 2010

18

Features of the light current-voltage characteristics of bifacial solar cells based on thin CdTe layers

A. V. Meriuts, G. S. Khrypunov, T. N. Shelest, N. V. Deyneko

Journal:

Year:

2010

Language:

english

File:

PDF, 151 KB

english, 2010

19

Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers

D. A. Vinokurov, M. A. Ladugin, A. V. Lyutetskii, A. A. Marmalyuk, A. N. Petrunov, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, A. L. Stankevich, N. V. Fetisova, I. S. Shashkin, N. S. Averkiev, I.

Journal:

Year:

2010

Language:

english

File:

PDF, 189 KB

english, 2010

20

A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, N. V. Kryzhanovskaya, M. A. Synitsin, V. S. Sizov, A. L. Zakgeim, M. N. Mizerov

Journal:

Year:

2010

Language:

english

File:

PDF, 155 KB

english, 2010

21

Magnetron-assisted deposition of thin (SiC)1-x(AlN)xalloy films

M. K. Gusejnov, M. K. Kurbanov, B. A. Bilalov, G. K. Safaraliev

Journal:

Year:

2010

Language:

english

File:

PDF, 178 KB

english, 2010

22

Fabrication of heterostructures based on layered nanocrystalline silicon carbide polytypes

A. V. Semenov, A. V. Lopin, V. M. Puzikov, V. N. Baumer, I. N. Dmitruk

Journal:

Year:

2010

Language:

english

File:

PDF, 209 KB

english, 2010

23

Effect of annealing on the structure of Bi2Te3-Bi2Se3films

N. M. Abdullayev, S. I. Mekhtiyeva, N. R. Memmedov, M. A. Ramazanov, A. M. Kerimova

Journal:

Year:

2010

Language:

english

File:

PDF, 1.14 MB

english, 2010

24

Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes

N. V. Kryzhanovskaya, W. V. Lundin, A. E. Nikolaev, A. F. Tsatsul’nikov, A. V. Sakharov, M. M. Pavlov, N. A. Cherkachin, M. J. Hÿtch, G. A. Valkovsky, M. A. Yagovkina, S. O. Usov

Journal:

Year:

2010

Language:

english

File:

PDF, 407 KB

english, 2010

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