Volume 33; Issue 7

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Solid-State Electronics
Volume 33; Issue 7

Solid-State Electronics

Volume 33; Issue 7

1

Application of open circuit voltage decay to the characterisation of heavy doping parameters in a p+ emitter of a junction diode

D.H.J. Totterdell, J.W. Leake, S.C. Jain, R.P. Mertens, R.J. Van Overstraeten

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 571 KB

english, 1990

2

Device characterization of L-type MOS transistors

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 535 KB

english, 1990

3

Analysis of a reverse-biased linearly graded junction with high concentration of deep impurities

J.A. Lopez-Villanueva, J.A. Jimenez-Tejada, P. Cartujo, J.R. Morante, J.E. Carceller

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 562 KB

english, 1990

4

An investigation of pnp polysilicon emitter transistors

A.P. Laser, K.M. Chu, D.L. Pulfrey, C.M. Maritan, N.G. Tarr

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 473 KB

english, 1990

5

A fully nonparabolic hydrodynamic model for describing hot electron transport in GaAs

R.A. Stewart, J.N. Churchill

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 1019 KB

english, 1990

6

A unipolar transistor with negative output resistance

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 605 KB

english, 1990

7

Modeling and parameter extraction technique from the ramp-voltage stressed I–V characteristics of thermally grown SiO2

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 536 KB

english, 1990

8

A study of base built-in field effects on the steady-state current gain of heterojunction bipolar transistors

J.J. Liou, W.W. Wong, J.S. Yuan

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 436 KB

english, 1990

9

The surface potential variation in the interelectrode gaps of GaAs cermet-gate charge-coupled devices

M. LeNoble, J.V. Cresswell, L. Young

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 574 KB

english, 1990

10

Hot-electron percolation

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 304 KB

english, 1990

11

Excellent thermal stability of cobaltaluminum alloy Schottky contacts on GaAs substrates

H.C. Cheng, C.Y. Wu, J.J. Shy

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 421 KB

english, 1990

12

A Gummel-Poon model for abrupt and graded heterojunction bipolar transistors (HBTs)

B.R. Ryum, Ibrahim M. Abdel-Motaleb

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 1.06 MB

english, 1990

13

Analytic MODFET models beyond the triangular well approximation

Timothy J. Drummond, Marc E. Sherwin

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 706 KB

english, 1990

14

A model of charge transport in thermal SiO2 implanted with Si

A. Kalnitsky, A.R. Boothroyd, J.P. Ellul

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 1.49 MB

english, 1990

15

A model for the non-linear base-collector depletion layer charge and its influence on intermodulation distortion in bipolar transistors

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 832 KB

english, 1990

16

Gamma radiation effects on polyimide-passivated n+p diodes

S.S. Ang, W.D. Brown, H.M. Le, R.K. Ulrich

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 511 KB

english, 1990

17

A physics based analytical MOSFET model with accurate field dependent mobility

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 1.04 MB

english, 1990

18

Estimation of velocity-overshoot in small size semiconductors

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 469 KB

english, 1990

19

The role of acceptor density on the high channel carrier density I–V characteristics of AlGaAs/GaAs MODFETs

Richard J. Krantz, Walter L. Bloss

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 417 KB

english, 1990

20

An analytical two-dimensional model for CMOS devices at room and cryogenic temperatures

K.S. Kalonia, F.C. Jain

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 395 KB

english, 1990

21

Calculation of electron density in planar-doped high electron mobility transistors

M.B. Patil, U. Ravaioli

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 662 KB

english, 1990

22

Electrical characteristics of an ion-implanted p-Ga0.47In0.53As MESFET at different Schottky barrier heights

S.N. Chattopadhyay, Debjani Dutta, B.B. Pal

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 286 KB

english, 1990

23

A new expression for minority carrier surface recombination velocity at low-high junction of an n+-p-p+ silicon diode

S.N. Singh, P.K. Singh

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 275 KB

english, 1990

24

Modeling the tunnelling current in reverse-biased p/n junctions

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 219 KB

english, 1990

25

A technique to measure the dynamic response of a-Si:H thin film transistor circuits

Rashid Bashir, Gerold W. Neudeck

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 208 KB

english, 1990

26

g-r noise spectra of semiconductors and insulators with various trap distributions

Kostas Amberiadis, Rodney W. Grimes, Michael R. Kump

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 201 KB

english, 1990

27

Hot electron transport in two dimensional electron gas

U. Sivan, A. Palevski, M. Heiblum, C.P. Umbach

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 585 KB

english, 1990

28

Corrigendum

Journal:

Solid-State Electronics

Year:

1990

File:

PDF, 23 KB

1990

29

Editorial - software survey section

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 111 KB

english, 1990

30

An inverted and stacked PMOS transistor by silicon epitaxial lateral overgrowth

J.L. Glenn Jr, G.W. Neudeck, J.A. Friedrich

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 414 KB

english, 1990

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