Volume 33; Issue 8

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Solid-State Electronics
Volume 33; Issue 8

Solid-State Electronics

Volume 33; Issue 8

1

Interface state density measurement in MOS structures by analysis of the thermally stimulated conductance

A. de Dios, E. Castán, L. Bailón, J. Barbolla, M. Lozano, E. Lora-Tamayo

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 576 KB

english, 1990

2

Skin effect consideration in metallised substrates of injection controlled transit time effect devices at mm-wave frequencies

I. Ahmad, S. Ahmad

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 468 KB

english, 1990

3

Electrical inhomogeneity in alloyed AuGeNi contact formed on GaAs

M. Kamada, T. Suzuki, K. Taira, M. Arai

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 354 KB

english, 1990

4

An equivalent circuit model for transverse acoustoelectric voltage measurements in semiconductors

F. Palma, G. De Cesare, A. Stagni

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 570 KB

english, 1990

5

In-situ measurements of magnetic field effects in sub-micron high-electron-mobility transistors

Eric R. Mueller, Robert H. Caverly

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 343 KB

english, 1990

6

Power MISFETs fabricated with superlatticed gate “insulators” and transition buffer layers

Wen-Chau Liu, Wen-Shiung Lour

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 1.58 MB

english, 1990

7

Two different methods of determining electromigration parameters associated with resistance change

A. van der Ziel, T.M. Chen, P. Fang

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 167 KB

english, 1990

8

A high efficiency Si solar cell using tunnel MIS front and back contacts

S.E.-D. Habib, M.Y. Soliman

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 492 KB

english, 1990

9

W-band GaAs Gunn diodes with high output power

J.M. Szubert, J. Barstow, R.B. Beall, J.J. Harris

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 214 KB

english, 1990

10

Improvement of thin-gate oxide integrity using photo-enhanced low-temperature nitridation

Y.K. Fang, K.C. Hwang, Y.W. Chen, C.P. Chiang

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 266 KB

english, 1990

11

On the robustness of LDD nMOS transistors subjected to measurement of drain breakdown voltage

Shian Aur, Amitava Chatterjee

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 470 KB

english, 1990

12

Generalized equations for the steady-state analysis of inhomogeneous semiconductor devices

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 445 KB

english, 1990

13

Thermal breakdown in GaAs MES diodes

A.J. Franklin, V.M. Dwyer, D.S. Campbell

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 1001 KB

english, 1990

14

A new measurement method of MOS transistor parameters

C. Ciofi, M. Macucci, B. Pellegrini

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 338 KB

english, 1990

15

Low-bias-noise spectroscopy of field-effect transistor channels: Depletion-region trap models and spectra

Robert B. Hallgren

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 889 KB

english, 1990

16

Analysis of the DX traps—Induced transient characteristics in AlGaAs/GaAs HEMTs

Tahui Wang, Chu-Chiao Yu

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 430 KB

english, 1990

17

Electrical characterization of Zn+ and P+ co-implanted InP:Fe

J.D. Woodhouse, M.C. Gaidis, J.P. Donnelly

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 744 KB

english, 1990

18

A new method of extracting the channel length from the gate current of p-channel MOSFETs

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 1.74 MB

english, 1990

19

On the nitridation-induced enhancement and degradation of MOSFET characteristics

H. Wong, Y.C. Cheng

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 232 KB

english, 1990

20

The effects of current spreading in the semiconductor on the determination of contact resistance

S.J. Chua, T.C. Chong, S.H. Lee, Y.S. Wang

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 200 KB

english, 1990

21

Announcement

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 146 KB

english, 1990

22

Editorial—Software survey section

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 109 KB

english, 1990

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