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Volume 36; Issue 5
Main
Solid-State Electronics
Volume 36; Issue 5
Solid-State Electronics
Volume 36; Issue 5
1
Precision, accuracy, uncertainty and traceability and their application to submicrometer dimensional metrology
Robert D. Larrabee
,
Michael T. Postek
Journal:
Solid-State Electronics
Year:
1993
Language:
english
File:
PDF, 1.38 MB
Your tags:
english, 1993
2
Analysis of current-voltage characteristics of fully depleted SOI MOSFETs
P.C. Yang
,
Sheng S. Li
Journal:
Solid-State Electronics
Year:
1993
Language:
english
File:
PDF, 621 KB
Your tags:
english, 1993
3
Calculation of the collector signal delay time of HBT's based on a piecewise-linear velocity profile
J.J. Liou
,
A. Zajac
Journal:
Solid-State Electronics
Year:
1993
Language:
english
File:
PDF, 305 KB
Your tags:
english, 1993
4
Acousto-electric deep-level transient spectroscopy in semiconductors
A. Abbate
,
K.J. Han
,
I.V. Ostrovskii
,
P. Das
Journal:
Solid-State Electronics
Year:
1993
Language:
english
File:
PDF, 639 KB
Your tags:
english, 1993
5
A study of titanium silicide formation by multiple arsenic-ion-implantation
P.C. Chen
,
J.Y. Lin
,
H.L. Hwang
Journal:
Solid-State Electronics
Year:
1993
Language:
english
File:
PDF, 471 KB
Your tags:
english, 1993
6
Monte Carlo study of a 50 nm-dual-gate HEMT providing against short-channel effects
P. Dollfus
,
P. Hesto
Journal:
Solid-State Electronics
Year:
1993
Language:
english
File:
PDF, 529 KB
Your tags:
english, 1993
7
The delayed-turn-on behavior in the accumulation-type SOI PMOS device operating at 77 K
J.B. Kuo
,
J.H. Sim
Journal:
Solid-State Electronics
Year:
1993
Language:
english
File:
PDF, 405 KB
Your tags:
english, 1993
8
Power law model for positive charge build-up in silicon dioxide due to high-field stressing
R.M. Patrikar
,
R. Lal
,
J. Vasi
Journal:
Solid-State Electronics
Year:
1993
Language:
english
File:
PDF, 377 KB
Your tags:
english, 1993
9
Optical effects on the current-voltage characteristics of lightly doped drain silicon MOSFETs
Sheng-Lyang Jang
,
Young-Shying Chen
,
Ping-Chen Chang
Journal:
Solid-State Electronics
Year:
1993
Language:
english
File:
PDF, 602 KB
Your tags:
english, 1993
10
Determination of doping concentration and interface charges for thin film SOI MOSFETs
Sung-Kye Park
,
Choong-Ki Kim
Journal:
Solid-State Electronics
Year:
1993
Language:
english
File:
PDF, 535 KB
Your tags:
english, 1993
11
Analysis and simulation of the frequency response of MOSFETs with uniform and/or local oxide degradation
H. Haddara
,
S. Bassiouni
,
H.F. Ragaie
Journal:
Solid-State Electronics
Year:
1993
Language:
english
File:
PDF, 811 KB
Your tags:
english, 1993
12
On the influence of sputter etch cleaning on the silicidation, the thermal stability and the electrical characteristics of Ti/p−Si contacts
A.S. Vercaemst
,
R.L. Van Meirhaeghe
,
W.H. Laflère
,
F. Cardon
,
W. De Bosscher
,
R.J. Schreutelkamp
Journal:
Solid-State Electronics
Year:
1993
Language:
english
File:
PDF, 739 KB
Your tags:
english, 1993
13
Characterization of MOVPE grown ZnSe on GaAs using Schottky-diodes
M. Heuken
,
L. Höpken
,
B. Opitz
Journal:
Solid-State Electronics
Year:
1993
Language:
english
File:
PDF, 546 KB
Your tags:
english, 1993
14
Current-voltage characteristics of lattice-mismatched GaInAs(n+)/GaAs(p) diodes including thermal annealing effects
Z.C. Huang
,
C.R. Wie
Journal:
Solid-State Electronics
Year:
1993
Language:
english
File:
PDF, 636 KB
Your tags:
english, 1993
15
Analytical modeling of threshold voltages in p-channel Si/SiGe/Si MOS structures
K. Iniewski
,
S. Voinigescu
,
J. Atcha
,
C.A.T. Salama
Journal:
Solid-State Electronics
Year:
1993
Language:
english
File:
PDF, 854 KB
Your tags:
english, 1993
16
Characterization of a defect layer at a Schottky barrier interface by current and capacitance measurements
A. Cola
,
M.G. Lupo
,
L. Vasanelli
,
A. Valentini
Journal:
Solid-State Electronics
Year:
1993
Language:
english
File:
PDF, 519 KB
Your tags:
english, 1993
17
Simple model of diamond depletion-type MOSFET
G. Gildenblat
,
S.A. Grot
,
C.W. Hatfield
Journal:
Solid-State Electronics
Year:
1993
Language:
english
File:
PDF, 179 KB
Your tags:
english, 1993
18
Accumulation-type vs inversion-type ultra-thin SOI PMOS devices operating at 300 and 77 K: Subthreshold behavior and pull-up switching performance of a CMOS inverter
J.B. Kuo
,
J.H. Sim
Journal:
Solid-State Electronics
Year:
1993
Language:
english
File:
PDF, 378 KB
Your tags:
english, 1993
19
Effects of the clock voltage waveforms on the charge transfer inefficiency of high-speed charge-coupled devices
L. Chen
,
S. Pennarthur
,
H.L. Kwok
Journal:
Solid-State Electronics
Year:
1993
Language:
english
File:
PDF, 252 KB
Your tags:
english, 1993
20
Interface characterization of fully depleted SOI MOSFETs by a threshold-voltage method
P.C. Yang
,
Sheng S. Li
Journal:
Solid-State Electronics
Year:
1993
Language:
english
File:
PDF, 196 KB
Your tags:
english, 1993
21
Editorial: Software survey section
Journal:
Solid-State Electronics
Year:
1993
Language:
english
File:
PDF, 103 KB
Your tags:
english, 1993
22
Furnace N2O oxidation process for submicron MOSFET device applications
Hyunsang Hwang
,
Ming-yin Hao
,
Jack Lee
,
Viju Mathews
,
Pierre C. Fazan
,
Chuck Dennison
Journal:
Solid-State Electronics
Year:
1993
Language:
english
File:
PDF, 302 KB
Your tags:
english, 1993
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