Volume 36; Issue 5

Main
Solid-State Electronics
Volume 36; Issue 5

Solid-State Electronics

Volume 36; Issue 5

1

Precision, accuracy, uncertainty and traceability and their application to submicrometer dimensional metrology

Robert D. Larrabee, Michael T. Postek

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 1.38 MB

english, 1993

2

Analysis of current-voltage characteristics of fully depleted SOI MOSFETs

P.C. Yang, Sheng S. Li

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 621 KB

english, 1993

3

Calculation of the collector signal delay time of HBT's based on a piecewise-linear velocity profile

J.J. Liou, A. Zajac

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 305 KB

english, 1993

4

Acousto-electric deep-level transient spectroscopy in semiconductors

A. Abbate, K.J. Han, I.V. Ostrovskii, P. Das

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 639 KB

english, 1993

5

A study of titanium silicide formation by multiple arsenic-ion-implantation

P.C. Chen, J.Y. Lin, H.L. Hwang

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 471 KB

english, 1993

6

Monte Carlo study of a 50 nm-dual-gate HEMT providing against short-channel effects

P. Dollfus, P. Hesto

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 529 KB

english, 1993

7

The delayed-turn-on behavior in the accumulation-type SOI PMOS device operating at 77 K

J.B. Kuo, J.H. Sim

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 405 KB

english, 1993

8

Power law model for positive charge build-up in silicon dioxide due to high-field stressing

R.M. Patrikar, R. Lal, J. Vasi

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 377 KB

english, 1993

9

Optical effects on the current-voltage characteristics of lightly doped drain silicon MOSFETs

Sheng-Lyang Jang, Young-Shying Chen, Ping-Chen Chang

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 602 KB

english, 1993

10

Determination of doping concentration and interface charges for thin film SOI MOSFETs

Sung-Kye Park, Choong-Ki Kim

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 535 KB

english, 1993

11

Analysis and simulation of the frequency response of MOSFETs with uniform and/or local oxide degradation

H. Haddara, S. Bassiouni, H.F. Ragaie

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 811 KB

english, 1993

12

On the influence of sputter etch cleaning on the silicidation, the thermal stability and the electrical characteristics of Ti/p−Si contacts

A.S. Vercaemst, R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon, W. De Bosscher, R.J. Schreutelkamp

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 739 KB

english, 1993

13

Characterization of MOVPE grown ZnSe on GaAs using Schottky-diodes

M. Heuken, L. Höpken, B. Opitz

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 546 KB

english, 1993

14

Current-voltage characteristics of lattice-mismatched GaInAs(n+)/GaAs(p) diodes including thermal annealing effects

Z.C. Huang, C.R. Wie

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 636 KB

english, 1993

15

Analytical modeling of threshold voltages in p-channel Si/SiGe/Si MOS structures

K. Iniewski, S. Voinigescu, J. Atcha, C.A.T. Salama

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 854 KB

english, 1993

16

Characterization of a defect layer at a Schottky barrier interface by current and capacitance measurements

A. Cola, M.G. Lupo, L. Vasanelli, A. Valentini

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 519 KB

english, 1993

17

Simple model of diamond depletion-type MOSFET

G. Gildenblat, S.A. Grot, C.W. Hatfield

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 179 KB

english, 1993

18

Accumulation-type vs inversion-type ultra-thin SOI PMOS devices operating at 300 and 77 K: Subthreshold behavior and pull-up switching performance of a CMOS inverter

J.B. Kuo, J.H. Sim

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 378 KB

english, 1993

19

Effects of the clock voltage waveforms on the charge transfer inefficiency of high-speed charge-coupled devices

L. Chen, S. Pennarthur, H.L. Kwok

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 252 KB

english, 1993

20

Interface characterization of fully depleted SOI MOSFETs by a threshold-voltage method

P.C. Yang, Sheng S. Li

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 196 KB

english, 1993

21

Editorial: Software survey section

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 103 KB

english, 1993

22

Furnace N2O oxidation process for submicron MOSFET device applications

Hyunsang Hwang, Ming-yin Hao, Jack Lee, Viju Mathews, Pierre C. Fazan, Chuck Dennison

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 302 KB

english, 1993