Volume 37; Issue 2

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Solid-State Electronics
Volume 37; Issue 2

Solid-State Electronics

Volume 37; Issue 2

1

Publisher's note

Journal:

Solid-State Electronics

Year:

1994

File:

PDF, 14 KB

1994

2

Characteristics of a GaAs metal-n+-v-δ (p+)-v-n+ switch

Der-Feng Guo, Shiu-Ren Yih, Jing-Tong Liang, Wen-Chau Liu

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 451 KB

english, 1994

3

A MODFET process for micrometer scale strained layer islands

K.Y. Hur, W.J. Schaff, L.F. Eastman, R.C. Compton

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 786 KB

english, 1994

4

Self-consistent simulation of modulation-doped field-effect transistors

Y.H. Wang, M.P. Houng, C.H. Chu, H.H. Chen

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 375 KB

english, 1994

5

Modification of the lucky drift theory of impact ionisation for investigation of soft thresholds

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 647 KB

english, 1994

6

Influence of channel series resistances on dynamic MOSFET behaviour

T. Smedes, F.M. Klaassen

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 247 KB

english, 1994

7

Transient analysis of submicron CMOS latchup with a physical criterion

Ming-Dou Ker, Chung-Yu Wu

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 1.13 MB

english, 1994

8

On the reverse bias safe operating area of power bipolar transistors during inductive turn-off

L. Fratelli, G.F. Vitale

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 1.56 MB

english, 1994

9

Subthreshold slope of long-channel, accumulation-mode p-channel SOI MOSFETs

J.P. Colinge, D. Flandre, F. Van de Wiele

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 404 KB

english, 1994

10

Degradation of npn bipolar junction transistors under dynamic high current stress

Sheng-Lyang Jang, Ping-Chen Chang

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 481 KB

english, 1994

11

Degradation of bipolar junction transistors under dynamic high current stress and biased in open-collector condition

Ping-Chen Chang, Sheng-Lyang Jang, Young-Shying Chen

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 429 KB

english, 1994

12

Analytical study of collector-base capacitance and cutoff frequency of n+-p-n-n+ bipolar junction transistors

Sheng-Lyang Jang

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 420 KB

english, 1994

13

Electronic density of states in highly tetrahedral amorphous carbon

V.S. Veerasamy, G.A.J. Amaratunga, C.A. Davis, W.I. Milne, P. Hewitt, M. Weiler

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 620 KB

english, 1994

14

Analytical surface potential expression for thin-film double-gate SOI MOSFETs

Kunihiro Suzuki, Tetsu Tanaka, Yoshiharu Tosaka, Hiroshi Horie, Yoshihiro Arimoto, Takashi Itoh

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 424 KB

english, 1994

15

Photocurrent gain mechanisms in metal-semiconductor-metal photodetectors

M. Klingenstein, J. Kuhl, J. Rosenzweig, C. Moglestue, A. Hülsmann, Jo. Schneider, K. Köhler

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 722 KB

english, 1994

16

Collector model describing bipolar transistor distortion at low voltages and high currents

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 1014 KB

english, 1994

17

A characterization technique for the degradation characteristics of Ti/Si schottky-barrier diodes and ohmic contacts after thermal silicidation

Yung-Song Lou, Ching-Yuan Wu

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 524 KB

english, 1994

18

Highly stable and routinely convergent 2-dimensional hydrodynamic device simulation

Qi Lin, Neil Goldsman, Gwo-Chung Tai

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 947 KB

english, 1994

19

A fast solution of poisson's equation in FETs

C.D. Kourkoutas, G.J. Papaioannou

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 239 KB

english, 1994

20

Threshold voltage shift in depletion mode insulated gate field effect transistors

Subhasis Haldar, Manoj Kumar Khanna Maneesha, Rachna Sood Manju, Vaneeta Aggarwal, R.S. Gupta

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 204 KB

english, 1994

21

Analysis of bilateral latch up triggering in VLSI circuits

H.S. Huang, C.Y. Chang, Chen-Chung Hsu, K.L. Chen, J.K. Lin

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 298 KB

english, 1994

22

Rapid analysis of conductance data in metal-oxide-semiconductor measurements using an approximate method

D. Sands, K.M. Brunson

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 230 KB

english, 1994