Volume 49; Issue 3

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Solid-State Electronics
Volume 49; Issue 3

Solid-State Electronics

Volume 49; Issue 3

1

A new constant-current technique for MOSFET parameter extraction

Chao-Yang Lu, James A. Cooper Jr.

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 547 KB

english, 2005

2

Body-tied triple-gate NMOSFET fabrication using bulk Si wafer

Tai-su Park, Siyoung Choi, Deok-Hyung Lee, U-In Chung, Joo Tae Moon, Euijoon Yoon, Jong-Ho Lee

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 560 KB

english, 2005

3

On the optimization and design of SiGe HBT cascode low-noise amplifiers

Qingqing Liang, Guofu Niu, John D. Cressler, Stewart Taylor, David L. Harame

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 482 KB

english, 2005

4

Photocapacitance of GaAs thin-film epitaxial structures

Nikolai B. Gorev, Inna F. Kodzhespirova, Evgeny N. Privalov, Nina Khuchua, Levan Khvedelidze, Michael S. Shur

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 384 KB

english, 2005

5

Temperature dependence of electron saturation velocity in GaAs measured in InGaP/GaAs HBT using DC and AC approaches

Y.M. Hsin, W.B. Tang, H.T. Hsu

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 479 KB

english, 2005

6

Recombination efficiency in bilayer organic light-emitting diode

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 288 KB

english, 2005

7

A new scaling theory for fully-depleted SOI double-gate MOSFET’s: including effective conducting path effect (ECPE)

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 424 KB

english, 2005

8

Characterization of sub-100 nm CMOS process using screening experiment technique

H.C. Srinivasaiah, Navakanta Bhat

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 386 KB

english, 2005

9

Passivation of InP/GaAsSb/InP double heterostructure bipolar transistors with ultra thin base layer by low-temperature deposited SiNx

Z. Jin, S. Neumann, W. Prost, F.-J. Tegude

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 270 KB

english, 2005

10

A precision physical model for three terminal diffused or ion-implanted resistors

MingRui Qian, DeZhong Wang

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 348 KB

english, 2005

11

Giant suppression of avalanche noise in GaN double-drift impact diodes

A. Reklaitis, L. Reggiani

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 260 KB

english, 2005

12

Multiple negative-differential-resistance switches based on an InGaP/GaAs/InGaAs step-compositional-emitter bipolar transistor for multiple-valued logic application

Jung-Hui Tsai, King-Poul Zhu, Ying-Cheng Chu, Shao-Yen Chiu

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 305 KB

english, 2005

13

A new LIGBT structure to suppress substrate currents in a junction isolated technology

B. Bakeroot, J. Doutreloigne, P. Moens

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 324 KB

english, 2005

14

Design and fabrication of high breakdown voltage 4H-SiC Schottky barrier diodes with floating metal ring edge terminations

Shu-Cheng Chang, Shui-Jinn Wang, Kai-Ming Uang, Bor-Wen Liou

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 494 KB

english, 2005

15

A study of remote plasma nitrided nGaAs/Au Schottky barrier

M. Ambrico, M. Losurdo, P. Capezzuto, G. Bruno, T. Ligonzo, L. Schiavulli, I. Farella, V. Augelli

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 445 KB

english, 2005

16

Polymeric integrated AC follower circuit with a JFET as an active device

Yuxin Liu, Tianhong Cui

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 338 KB

english, 2005

17

Temperature dependence on electrical characteristics of short geometry poly-crystalline silicon thin film transistor

Amit Sehgal, Tina Mangla, Mridula Gupta, R.S. Gupta

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 483 KB

english, 2005

18

Ultrathin oxynitride films grown on Si0.74Ge0.26/Si heterolayers using low energy plasma source nitrogen implantation

R. Mahapatra, S. Maikap, G.S. Kar, S.K. Ray

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 512 KB

english, 2005

19

Interfaces and defects of high-K oxides on silicon

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 584 KB

english, 2005

20

Structural and electrical properties of SiO2 films deposited on Si substrates from tetraethoxysilane/oxygen plasmas

D. Goghero, A. Goullet, J.P. Landesman

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 422 KB

english, 2005

21

A design oriented charge-based current model for symmetric DG MOSFET and its correlation with the EKV formalism

Jean-Michel Sallese, François Krummenacher, Fabien Prégaldiny, Christophe Lallement, A. Roy, C. Enz

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 404 KB

english, 2005

22

Memory operation of Pt–SrBi2Ta2O9–Y2O3–Si field-effect transistor with damage-free selective dry etching process

Sun Il Shim, Young Suk Kwon, Seong-Il Kim, Yong Tae Kim, Jung Ho Park

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 560 KB

english, 2005

23

A parametric study for Si p+nn+ diodes in picosecond closing switch applications

Fei Zhang, Wen Yu, Chengfang Li, Xiaowei Sun

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 325 KB

english, 2005

24

Nitride-based MSM UV photodetectors with photo-chemical annealing Schottky contacts

Y.K. Su, P.C. Chang, C.H. Chen, S.J. Chang, C.L. Yu, C.T. Lee, H.Y. Lee, J. Gong, P.C. Chen, C.H. Wang

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 328 KB

english, 2005

25

Modeling of single-π equivalent circuit for on-chip spiral inductors

F.Y. Huang, N. Jiang, E.L. Bian

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 378 KB

english, 2005

26

Substrate current, gate current and lifetime prediction of deep-submicron nMOS devices

Zhi Cui, Juin J. Liou, Yun Yue, Hei Wong

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 428 KB

english, 2005

27

Scaling of lowered source/drain (LSD) and raised source/drain (RSD) ultra-thin body (UTB) SOI MOSFETs

Xia An, Ru Huang, Xing Zhang, Yangyuan Wang

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 359 KB

english, 2005

28

Thermally-driven motion of current filaments in ESD protection devices

D. Pogany, S. Bychikhin, M. Denison, P. Rodin, N. Jensen, G. Groos, M. Stecher, E. Gornik

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 736 KB

english, 2005

29

Improved analysis of low frequency noise in polycrystalline silicon thin-film transistors

D.H. Tassis, N.A. Hastas, C.A. Dimitriadis, G. Kamarinos

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 304 KB

english, 2005

30

Extraction of non-ideal junction model parameters from the explicit analytic solutions of its I–V characteristics

Adelmo Ortiz-Conde, Francisco J. García Sánchez

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 348 KB

english, 2005

31

Optimisation of a 4H-SiC enhancement mode power JFET for high temperature operation

P. Bhatnagar, A.B. Horsfall, N.G. Wright, C.M. Johnson, K.V. Vassilevski, A.G. O’Neill

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 313 KB

english, 2005

32

Effective resistivity of fully-processed SOI substrates

D. Lederer, Jean-Pierre Raskin

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 371 KB

english, 2005

33

New varactors and high-power high-frequency capacitive devices

Valery M. Ioffe, Sergei I. Chikichev

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 589 KB

english, 2005