Volume 52; Issue 11

Main
Solid-State Electronics
Volume 52; Issue 11

Solid-State Electronics

Volume 52; Issue 11

1

Flex-pass-gate SRAM for static noise margin enhancement using FinFET-based technology

Shin-ichi O’uchi, Kazuhiko Endo, Meishoku Masahara, Kunihiro Sakamoto, Yongxun Liu, Takashi Matsukawa, Toshihiro Sekigawa, Hanpei Koike, Eiichi Suzuki

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 801 KB

english, 2008

2

Properties of high sensitivity ZnO surface acoustic wave sensors on SiO2/(1 0 0) Si substrates

Soumya Krishnamoorthy, Agis A. Iliadis

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 423 KB

english, 2008

3

Study the effect of distribution of density of states on the depletion width of organic Schottky contacts

Arash Takshi, Milad Mohammadi, John D. Madden

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 371 KB

english, 2008

4

Compact model of output conductance in nanoscale bulk MOSFET based on 2D analytical calculations

Michaela Weidemann, Alexander Kloes, Benjamin Iñiguez

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 643 KB

english, 2008

5

A parasitic resistance measurement method exploiting gate current–density characteristics in ultra-short Schottky-gate FETs

Takashi Inoue, Walter Contrata

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 394 KB

english, 2008

6

An analytic procedure for extraction of metallic collector-up InP/InGaAsP/InGaAs HBT small signal equivalent circuit parameters

A. Oudir, M. Mahdouani, R. Bourguiga, F. Pardo, J.L. Pelouard

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 1.49 MB

english, 2008

7

A high Schottky barrier between Ni and S-passivated n-type Si(1 0 0) surface

G. Song, M.Y. Ali, M. Tao

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 368 KB

english, 2008

8

Unified tunnelling-diffusion theory for Schottky and very thin MOS structures

J. Racko, P. Valent, P. Benko, D. Donoval, L. Harmatha, P. Pinteš, J. Breza

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 425 KB

english, 2008

9

Numerical analysis of SiGe heterojunction bipolar phototransistor based on virtual substrate

Yong Zhang, Cheng Li, Song-Yan Chen, Hong-Kai Lai, Jun-Yong Kang

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 347 KB

english, 2008

10

Enhanced pure red electroluminescence intensity of Eu(o-BBA)3(phen) by red dye co-doping and inorganic semiconductor as charge carrier function layer

Fujun Zhang, Zheng Xu, Suling Zhao, Liwei Wang, Lifang Lu

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 669 KB

english, 2008

11

Structural and optical properties of ZrB2 and HfxZr1−xB2 films grown by vicinal surface epitaxy on Si(1 1 1) substrates

R. Roucka, Y.-J. An, A.V.G. Chizmeshya, V.R. D’Costa, J. Tolle, J. Menéndez, J. Kouvetakis

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 490 KB

english, 2008

12

A poly-Si AMOLED display with high uniformity

KeeChan Park, Jae-Hong Jeon, YoungIl Kim, Jae Beom Choi, Young-Jin Chang, ZhiFeng Zhan, ChiWoo Kim

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 1.37 MB

english, 2008

13

Self-heating and destruction of high-voltage 4H-SiC rectifier diodes under a single short current surge pulse

Michael E. Levinshtein, Pavel A. Ivanov, Tigran T. Mnatsakanov, John W. Palmour, Mrinal K. Das, Brett A. Hull

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 227 KB

english, 2008

14

A quantum mechanical mobility model for scaled NMOS transistors with ultra-thin high-K dielectrics and metal gate electrodes

Yanli Zhang, Marvin H. White

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 233 KB

english, 2008

15

Corrigendum to “An analytical channel thermal noise model for deep sub-micron MOSFETs with short channel effects” [Solid State Electronics 51(7) (2007) 1034–1038]

Jongwook Jeon, Jong Duk Lee, Byung-Gook Park, Hyungcheol Shin

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 127 KB

english, 2008

16

Bismuth doped ZnSe films fabricated on silicon substrates by pulsed laser deposition

Yiqun Shen, Ning Xu, Wei Hu, Xiaofeng Xu, Jian Sun, Zhifeng Ying, Jiada Wu

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 421 KB

english, 2008

17

Erratum to “Integration of CVD silicon nanocrystals in a 32 Mb NOR flash memory” [Solid State Electronics 52(9) (2008) 1452–1459]

S. Jacob, B. De Salvo, L. Perniola, G. Festes, S. Bodnar, R. Coppard, J.F. Thiery, T. Pate-Cazal, C. Bongiorno, S. Lombardo, J. Dufourcq, E. Jalaguier, T. Pedron, F. Boulanger, S. Deleonibus

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 111 KB

english, 2008

18

Editorial Board

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 67 KB

english, 2008

19

Transport boundary condition for semiconductor structures

I.N. Volovichev, J.E. Velázquez-Perez, Yu.G. Gurevich

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 215 KB

english, 2008

20

RF characterization and isolation properties of mesoporous Si by on-chip coplanar waveguide measurements

H. Contopanagos, F. Zacharatos, A.G. Nassiopoulou

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 439 KB

english, 2008

21

Temperature influence on the gate-induced floating body effect parameters in fully depleted SOI nMOSFETs

Paula Ghedini Der Agopian, João Antonio Martino, Eddy Simoen, Cor Claeys

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 271 KB

english, 2008

22

A new approach for physical-based modelling of bipolar power semiconductor devices

R. Chibante, A. Araújo, A. Carvalho

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 698 KB

english, 2008

23

A time-dependent technique for carrier recombination and generation lifetime measurement in SOI MOSFET

Gang Zhang, Won Jong Yoo, Chung Ho Ling

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 243 KB

english, 2008

24

Normally-Off AlGaN/GaN HEMTs with InGaN cap layer: A simulation study

S. Vitanov, V. Palankovski

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 404 KB

english, 2008

25

Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation

Enrico Furno, Francesco Bertazzi, Michele Goano, Giovanni Ghione, Enrico Bellotti

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 296 KB

english, 2008

26

InAs-based heterostructure barrier varactor diodes with In0.3Al0.7As0.4Sb0.6 as the barrier material

James G. Champlain, Richard Magno, Mario Ancona, Harvey S. Newman, J. Brad Boos

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 263 KB

english, 2008

27

Long-wave (10 μm) infrared light emitting diode device performance

Naresh C. Das, John Bradshaw, Fred Towner, R. Leavitt

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 424 KB

english, 2008

28

Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with fmax of 305 GHz

Z. Jin, Y. Su, W. Cheng, X. Liu, A. Xu, M. Qi

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 355 KB

english, 2008

29

Comparison of contact resistance between accumulation-mode and inversion-mode multigate FETs

Chi-Woo Lee, Dimitri Lederer, Aryan Afzalian, Ran Yan, Nima Dehdashti, Weize Xiong, Jean-Pierre Colinge

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 366 KB

english, 2008