Volume 380; Issue 1-2

Thin Solid Films

Volume 380; Issue 1-2
3

Growth-induced atomic step ordering on patterned and non-patterned Si(111)

Year:
2000
Language:
english
File:
PDF, 1.21 MB
english, 2000
4

Kinetic vs. strain-induced growth instabilities on vicinal Si(001) substrates

Year:
2000
Language:
english
File:
PDF, 1.34 MB
english, 2000
7

Ge growth mode modification on carbon-induced Si(001)-c(4×4) surfaces

Year:
2000
Language:
english
File:
PDF, 1.30 MB
english, 2000
8

SiGe-based FETs: buffer issues and device results

Year:
2000
Language:
english
File:
PDF, 1.41 MB
english, 2000
13

Exclusion zone model of islands spatial distribution in molecular beam epitaxy

Year:
2000
Language:
english
File:
PDF, 987 KB
english, 2000
15

Indium segregation kinetics in InGaAs ternary compounds

Year:
2000
Language:
english
File:
PDF, 1022 KB
english, 2000
16

MBE-growth of heteropolytypic low-dimensional structures of SiC

Year:
2000
Language:
english
File:
PDF, 953 KB
english, 2000
18

Optical properties of self-assembled InAs quantum dots grown on GaAs(211)A substrate

Year:
2000
Language:
english
File:
PDF, 1.04 MB
english, 2000
19

InAs/GaAs multiple quantum dot structures grown by LP-MOVPE

Year:
2000
Language:
english
File:
PDF, 1.01 MB
english, 2000
22

Diffusion-induced step decoration of Co on Ag(001)

Year:
2000
Language:
english
File:
PDF, 1.03 MB
english, 2000
23

Effect of the co-deposition of Sb and Si on surface morphology

Year:
2000
Language:
english
File:
PDF, 972 KB
english, 2000
24

Selective and non-selective growth by GSMBE/ULPCVD for heterojunction bipolar transistors

Year:
2000
Language:
english
File:
PDF, 1.06 MB
english, 2000
26

Comparison of epitaxial growth of CoSi2 among Co/Ti, Co/Hf, and Co/Nb bilayers on (100)Si

Year:
2000
Language:
english
File:
PDF, 1.00 MB
english, 2000
28

Atomic-layer doping in Si by alternately supplied PH3 and SiH4

Year:
2000
Language:
english
File:
PDF, 1.05 MB
english, 2000
29

Correlation between magnetic and transport properties of Co/Ir/Co sandwiches and surface roughness

Year:
2000
Language:
english
File:
PDF, 1.27 MB
english, 2000
30

Epitaxial Si-based tunnel diodes

Year:
2000
Language:
english
File:
PDF, 1.31 MB
english, 2000
31

Physics and applications of Si/SiGe/Si resonant interband tunneling diodes

Year:
2000
Language:
english
File:
PDF, 948 KB
english, 2000
32

Vertical MOS-gated pin-diodes: MOS-gated tunneling transistors in Si(100) and Si(111)

Year:
2000
Language:
english
File:
PDF, 945 KB
english, 2000
33

In situ RHEED control of self-organized Ge quantum dots

Year:
2000
Language:
english
File:
PDF, 1.44 MB
english, 2000
34

Sb segregation in Si and SiGe: effect on the growth of self-organised Ge dots

Year:
2000
Language:
english
File:
PDF, 1.26 MB
english, 2000
35

Cooperative arrangement of self-assembled Ge dots on pre-grown Si mesas

Year:
2000
Language:
english
File:
PDF, 1.06 MB
english, 2000
36

Ge–Si intermixing in Ge quantum dots on Si

Year:
2000
Language:
english
File:
PDF, 1.03 MB
english, 2000
37

Nucleation of Ge quantum dots on the C-alloyed Si(001) surface

Year:
2000
Language:
english
File:
PDF, 1.03 MB
english, 2000
38

Intra-valence band photocurrent measurements on Ge quantum dots in Si

Year:
2000
Language:
english
File:
PDF, 1.06 MB
english, 2000
39

Self-assembling InAs and InP quantum dots for optoelectronic devices

Year:
2000
Language:
english
File:
PDF, 1.42 MB
english, 2000
41

Optically-induced charge storage in self-assembled InAs quantum dots

Year:
2000
Language:
english
File:
PDF, 967 KB
english, 2000
43

Piezoelectric effects in InAs/GaAs(N11) self-assembled quantum dots

Year:
2000
Language:
english
File:
PDF, 1.02 MB
english, 2000
45

SiGe/Si hetero-field-effect-transistor with PN-junction gate

Year:
2000
Language:
english
File:
PDF, 937 KB
english, 2000
46

MBE-grown vertical power-MOSFETs with 100-nm channel length

Year:
2000
Language:
english
File:
PDF, 1.05 MB
english, 2000
50

Electronic properties of WS2 monolayer films

Year:
2000
Language:
english
File:
PDF, 947 KB
english, 2000
52

Admittance spectroscopy of Ge quantum dots in Si

Year:
2000
Language:
english
File:
PDF, 996 KB
english, 2000
53

InAs/GaAs lasers with very thin active layer

Year:
2000
Language:
english
File:
PDF, 1008 KB
english, 2000
54

Photoreflectance spectroscopy of InGaAsN/GaAs quantum wells grown by MBE

Year:
2000
Language:
english
File:
PDF, 1.01 MB
english, 2000
56

Photoluminescence of carbon-induced Ge islands in silicon

Year:
2000
Language:
english
File:
PDF, 995 KB
english, 2000
57

Interface control of InGaAs/AlAsSb heterostructures

Year:
2000
Language:
english
File:
PDF, 923 KB
english, 2000
59

MBE Si regrowth on carbon-induced Si(001)-c(4×4) reconstructions studied by RHEED

Year:
2000
Language:
english
File:
PDF, 1.01 MB
english, 2000
60

Quasi van der Waals epitaxy of ZnSe on the layered chalcogenides InSe and GaSe

Year:
2000
Language:
english
File:
PDF, 1.06 MB
english, 2000
62

Thin film analysis via accelerator-based nuclear methods

Year:
2000
Language:
english
File:
PDF, 1.32 MB
english, 2000
64

Preface

Year:
2000
Language:
english
File:
PDF, 670 KB
english, 2000
65

Stranski–Krastanov growth of Si on SiC(0001)

Year:
2000
Language:
english
File:
PDF, 1.20 MB
english, 2000
66

Nucleation and evolution of Si1−xGex islands on Si(001)

Year:
2000
Language:
english
File:
PDF, 1.38 MB
english, 2000
70

Terahertz emission of SiGe/Si quantum wells

Year:
2000
Language:
english
File:
PDF, 923 KB
english, 2000
71

Raman spectra of TiN/AlN superlattices

Year:
2000
Language:
english
File:
PDF, 997 KB
english, 2000
72

Interface structure at the large misfit, still common epitaxy β-FeSi2(101) or (110)//Si(111)

Year:
2000
Language:
english
File:
PDF, 940 KB
english, 2000
73

Carbon segregation in silicon

Year:
2000
Language:
english
File:
PDF, 1023 KB
english, 2000
75

Si/Ge-nanocrystals on SiC(0001)

Year:
2000
Language:
english
File:
PDF, 942 KB
english, 2000
76

Index

Year:
2000
File:
PDF, 625 KB
2000
77

Index

Year:
2000
Language:
english
File:
PDF, 1.12 MB
english, 2000