Volume 39; Issue 10

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Vacuum
Volume 39; Issue 10

Vacuum

Volume 39; Issue 10

1

Applications of a high spatial resolution combined AES/SIMS instrument

HE Bishop, DP Moon, P Marriott, PR Chalker

Journal:

Year:

1989

Language:

english

File:

PDF, 1.33 MB

english, 1989

2

Energy distributions of molecular gas ions generated in a special glow-discharge source

Journal:

Year:

1989

Language:

english

File:

PDF, 277 KB

english, 1989

3

A new type of hollow cathode discharge gun used in ion beam coating apparatus and theory analysis

Zhang Shulin, Wang Jichang

Journal:

Year:

1989

Language:

english

File:

PDF, 218 KB

english, 1989

4

A model for reactive sputtering with magnetrons

Journal:

Year:

1989

Language:

english

File:

PDF, 548 KB

english, 1989

5

Hard coatings

RF Bunshah, CV Deshpandey

Journal:

Year:

1989

Language:

english

File:

PDF, 1009 KB

english, 1989

6

A rotating substrate holder for the production of uniform thin amorphous films and multilayer structures

JSG Taylor, N Piggins

Journal:

Year:

1989

Language:

english

File:

PDF, 145 KB

english, 1989

7

Pumping mechanism for N2 gas in a triode ion pump with A1100 aluminum cathode: Y C Liu et al, J Vac Sci Technol, A6, 1988, 139–143

Journal:

Year:

1989

Language:

english

File:

PDF, 107 KB

english, 1989

8

Primary vacuum pumps for the fusion reactor fuel cycle: J L Hemmerich, J Vac Sci Technol, A6, 1988, 144–153

Journal:

Year:

1989

Language:

english

File:

PDF, 107 KB

english, 1989

9

Integrated thermal vacuum sensor with extended range: A W van Herwaarden and P M Sarro, Vacuum, 38, 1988, 449–453

Journal:

Year:

1989

Language:

english

File:

PDF, 107 KB

english, 1989

10

On the calculation of the overall transmission probability of a variable blade length multiple-stage turbomolecular pump: Tu Ji-Yuan and Yong Nai-Hang, Vacuum, 38, 1988, 13–14

Journal:

Year:

1989

Language:

english

File:

PDF, 107 KB

english, 1989

11

Rotary pump backstreaming: an analytical appraisal of practical results and the factors affecting them: L Laurenson et al, J Vac Sci Technol, A6, 1988, 238–242

Journal:

Year:

1989

Language:

english

File:

PDF, 107 KB

english, 1989

12

Vacuum pumping system for the Lanzhou cyclotron: Zhang Shuxiu,Vacuum,38, 1988, 125–127

Journal:

Year:

1989

Language:

english

File:

PDF, 147 KB

english, 1989

13

Oscillating vane for measuring speed of gas flow: H H Johnsson and B Vonnegut,Rev Sci Instrum,59, 1988, 783–7786

Journal:

Year:

1989

Language:

english

File:

PDF, 174 KB

english, 1989

14

The emerging technologies of oil-free vacuum pumps: M H Hablanian,J Vac Sci Technol,A6, 1988, 1177–1182

Journal:

Year:

1989

Language:

english

File:

PDF, 174 KB

english, 1989

15

The molecular drag pump: principle, characteristics, and applications: P Duval et al,J Vac Sci Technol,A6, 1988, 1187–1191

Journal:

Year:

1989

Language:

english

File:

PDF, 174 KB

english, 1989

16

Analysis of frequency responses for different rotor configurations of small turbomolecular pumps: F Casaro,J Vac Sci Technol,A6, 1988, 1192–1195

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

17

Thirty years of turbomolecular pumps: a review and recent developments: J Henning,J Vac Sci Technol,A6, 1988, 1196–1201

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

18

Proposal for a sensitive leak test telescope: W R Blanchard et al,J Vac Sci Technol,A6, 1988, 235–237

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

19

Use of porous plugs in the transition flow range for the calibration of vacuum gauges: J K N Sharma and Pardeep Mohan,J Vac Sci Technol,A6, 1988, 1217–1221

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

20

An evaluation of the composition of the residual atmosphere above a commercial dry pump: W Wong et al,J Vac Sci Technol,A6, 1988, 1183–1186

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

21

Extension of thermocouple gauge sensitivity to atmospheric pressure: J Zettler and R Sud,J Vac Sci Technol,A6, 1988, 1153–1155

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

22

Some characteristics of an inverted magnetron cold cathode ionization gauge with dual feedthroughs: N T Peacock and R N Peacock,J Vac Sci Technol,A6, 1988, 1141–1144

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

23

Medium resolution atmospheric pressure ionization mass spectrometer: Andrew H Grange,Rev Sci Instrum,59, 1988, 573–579

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

24

A vacuum measurement system with Penning gauge for high voltage application: L M J Vries and G C Damstra,Vacuum,38, 1988, 171–173

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

25

Quantitative measurements with quadrupole mass spectrometers: important specifications for reliable measurements: Werner Groβ Bley,Vacuum,38, 1988, 103–109

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

26

A time-of-flight quadrupole mass spectrometer system for measurements of thermal decomposition: K A Hardy et al,Nucl Instrum Meth Phys Res,B31, 1988, 584–587

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

27

A photoemission study of H2O adsorption on a vicinal Si(100) surface: R McGrath et al,Vacuum,38, 1988, 251–255

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

28

Reaction of atomic and molecular bromine with aluminum: A Landauer Keaton and D W Hess,J appl Phys,63, 1988, 533–539

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

29

Surface effects on the stability of hot cathode ionization gauges: U Harten et al,Vacuum,38, 1988, 167–169

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

30

Model calculation for the tunnel current from a tungsten tip to a Ni(100) surface with a chemisorbed oxygen atom: G Doyen et al,J Vac Sci Technol,A6, 1988, 327–330

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

31

Characterization and thermal desorption spectroscopy study on a new, low outgassing material surface for improved ultrahigh vacuum uses: D Fujita and T Homma,J Vac Sci Technol,A6, 1988, 230–234

Journal:

Year:

1989

Language:

english

File:

PDF, 153 KB

english, 1989

32

Tritium removal from noble gas streams: W T Shmayda et al,J Vac Sci Technol,A6, 1988, 1259–1262

Journal:

Year:

1989

Language:

english

File:

PDF, 153 KB

english, 1989

33

Techniques for testing cryopump capacity: John R Porter,J Vac Sci Technol,A6, 1988, 1214–1216

Journal:

Year:

1989

Language:

english

File:

PDF, 153 KB

english, 1989

34

The influence of heavier gases in pumping helium and hydrogen in an ion pump: M Audi and M DeSimon,J Vac Sci Technol,A6, 1988, 1205–1208

Journal:

Year:

1989

Language:

english

File:

PDF, 153 KB

english, 1989

35

Lubricating of mechanisms for vacuum service: K G Roller,J Vac Sci Technol,A6, 1988, 1161–1165

Journal:

Year:

1989

Language:

english

File:

PDF, 153 KB

english, 1989

36

A generalized approach to vacuum system automation: R W McMahon et al,J Vac Sci Technol,A6, 1988, 1158–1160

Journal:

Year:

1989

Language:

english

File:

PDF, 153 KB

english, 1989

37

Properties of polycrystalline silicon grown on insulating subtrates by electron beam gun evaporation: N K Annamalai et al,Thin Solid Films,155, 1988, 77–79

Journal:

Year:

1989

Language:

english

File:

PDF, 153 KB

english, 1989

38

Vapor-deposited superconducting lanthanum sulfide films: D D Berkley et al,Thin Solid Films,156, 1988, 271–275

Journal:

Year:

1989

Language:

english

File:

PDF, 156 KB

english, 1989

39

On the properties of physically vapour-deposited TiAlVN coatings: O Knotek et al,Thin Solid Films,153, 1987, 83–90

Journal:

Year:

1989

Language:

english

File:

PDF, 157 KB

english, 1989

40

Characteristics of titanium arc evaporation processes: P J Martin et al,Thin Solid Films,153, 1987, 91–102

Journal:

Year:

1989

Language:

english

File:

PDF, 157 KB

english, 1989

41

Uniform composition TeSe film preparation from alloy sources: R Chiba and N Funakoshi,Thin Solid Films,157, 1988, 307–313

Journal:

Year:

1989

Language:

english

File:

PDF, 157 KB

english, 1989

42

A study of the adhesion of vacuum-evaporated polyethylene films to aluminium: D Bekiarov et al,Thin Solid Films,157, 1988, 43–48

Journal:

Year:

1989

Language:

english

File:

PDF, 157 KB

english, 1989

43

Kinetics of growth coalescence of In/GaAs: J B Adams et al,J Vac Sci Technol,A6, 1988, 2029–2033

Journal:

Year:

1989

Language:

english

File:

PDF, 157 KB

english, 1989

44

Vacuum vapor deposited thin films of a perylene dicarboximide derivative: microstructure versus deposition parameters: M K Debe et al,J Vac Sci Technol,A6, 1988, 1907–1911

Journal:

Year:

1989

Language:

english

File:

PDF, 157 KB

english, 1989

45

A source replenishment device for vacuum deposition: R. A. Hill,Vacuum,37, 1987, 769–771

Journal:

Year:

1989

Language:

english

File:

PDF, 157 KB

english, 1989

46

Deposition techniques for the preparation of thin film nuclear targets: A H F Muggleton,Vacuum,37, 1987, 785–817

Journal:

Year:

1989

Language:

english

File:

PDF, 157 KB

english, 1989

47

Formation and thermal stability of amorphous CuZr thin films deposited by coevaporation: T Minemura et al,J appl Phys,63, 1988, 4426–4430

Journal:

Year:

1989

Language:

english

File:

PDF, 152 KB

english, 1989

48

Formation of some hierarchy in amorphous structure during the crystallization of vacuum-deposited amorphous semiconductor films: Kunisuke Maki and Yukichi Shigeta,J appl Phys,63, 1988, 5747–5750

Journal:

Year:

1989

Language:

english

File:

PDF, 152 KB

english, 1989

49

Growth, atomic structure, and oxidation of chromium overlayers on W(110): Neal D Shinn and Paul J Berlowitz,J Vac Sci Technol,A6, 1988, 597–599

Journal:

Year:

1989

Language:

english

File:

PDF, 152 KB

english, 1989

50

Stress distribution in released vacuum-deposited aluminum films: C van Opdorp and M J Verkerk,J appl Phys,63, 1988, 1518–1525

Journal:

Year:

1989

Language:

english

File:

PDF, 152 KB

english, 1989

51

Growth processes in amorphous metallic films: a computer simulation: R Manaila et al,Thin Solid Films,158, 1988, 299–312

Journal:

Year:

1989

Language:

english

File:

PDF, 152 KB

english, 1989

52

Structure of TiN coatings deposited at relatively high rates and low temperatures by magnetron sputtering: V Valvoda et al,Thin Solid Films,156, 1988, 53–63

Journal:

Year:

1989

Language:

english

File:

PDF, 152 KB

english, 1989

53

The effect of stoichiometry on sputtering deuterium retention and surface damage in titanium carbide films: M Kitajima et al,Thin Solid Films,156, 1988, 231–238

Journal:

Year:

1989

Language:

english

File:

PDF, 152 KB

english, 1989

54

Deposition of TiB2 films by a co-sputtering method: T Shikama et al,Thin Solid Films,156, 1988, 287–293

Journal:

Year:

1989

Language:

english

File:

PDF, 152 KB

english, 1989

55

Pressure stability in reactive magnetron sputtering: A G Spencer et al,Thin Solid Films,158, 1988, 141–149

Journal:

Year:

1989

Language:

english

File:

PDF, 152 KB

english, 1989

56

Solid lubricating fluorine-containing polymer film synthesized by perfluoropolyether sputtering: Iwao Sugimoto and Shojiro Miyake,Thin Solid Films,158, 1988, 51–60

Journal:

Year:

1989

Language:

english

File:

PDF, 158 KB

english, 1989

57

Characterization of cosputtered tungsten carbide thin films: Hwa-Yueh Yang et al,Thin Solid Films,158, 1988, 37–44

Journal:

Year:

1989

Language:

english

File:

PDF, 158 KB

english, 1989

58

Preparation properties and applications of boron nitride thin films: S P S Arya and A D'Amico,Thin Solid Films,157, 1988, 267–282

Journal:

Year:

1989

Language:

english

File:

PDF, 158 KB

english, 1989

59

Structure of reactively sputtered chromium-carbon films: S K Sharma and J P Morlevat,Thin Solid Films,156, 1988, 307–314

Journal:

Year:

1989

Language:

english

File:

PDF, 158 KB

english, 1989

60

Depth of origin of sputtered atoms: experimental and theoretical study of Cu/Ru(0001): J W Burnett et al,J Vac Sci Technol,A6, 1988, 2064–2068

Journal:

Year:

1989

Language:

english

File:

PDF, 158 KB

english, 1989

61

Geometrical and surface effects in the sputtering process: S A Schwarz,J Vac Sci Technol,A6, 1988, 2069–2072

Journal:

Year:

1989

Language:

english

File:

PDF, 158 KB

english, 1989

62

Ion beam self-sputtering using a cathodic arc ion source: D M Sanders,J Vac Sci Technol,A6, 1988, 1929–1933

Journal:

Year:

1989

Language:

english

File:

PDF, 158 KB

english, 1989

63

Ion sputtering yield measurements for submicrometer thin films: Nina Veisfeld and Joseph D Geller,J Vac Sci Technol,A6, 1988, 2077–2081

Journal:

Year:

1989

Language:

english

File:

PDF, 158 KB

english, 1989

64

Influence of deposition rate on properties of reactively sputtered TiNx films: J Musil et al,Vacuum,38, 1988, 459–461

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

65

Reconsidering the mechanisms of laser sputtering with Knudsen-layer formation taken into account: Roger Kelly and R W Dreyfus,Nucl Instrum Meth Phys Res,B32, 1988, 341–348

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

66

Sputtering of insulators: G Betz and W Husinsky,Nucl Instrum Meth Phys Res,B32, 1988, 331–340

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

67

The properties of aluminum thin films sputter deposited at elevated temperatures: M Inoue et al,J Vac Sci Technol,A6, 1988, 1636–1639

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

68

Effect of resputtering on composition of WSix films deposited by multilayer sputtering: R Bruce et al,J Vac Sci Technol,A6, 1988, 1642–1645

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

69

Investigation of cosputtered W-C thin films as diffusion barriers: H Y Yang and X-A Zhao,J Vac Sci Technol,A6, 1988, 1646–1649

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

70

Diffusion of Cu into rf-sputtered iron oxide films: Osamu Ishii,J appl Phys,63, 1988, 4753–4755

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

71

Current-voltage relations in magnetrons: S M Rossnagel and H R Kaufman,J Vac Sci Technol,A6, 1988, 223–229

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

72

Cosputtered W75C25 thin film diffusion barriers: Hwa-Yueh Yang et al,Thin Solid Films,158, 1988, 45–50

Journal:

Year:

1989

Language:

english

File:

PDF, 155 KB

english, 1989

73

A simple and novel technique for the deposition of conducting tin dioxide films: Malay K Karanjai and Dhruba Das Gupta,J Phys D: Appl Phys,21, 1988, 356–358

Journal:

Year:

1989

Language:

english

File:

PDF, 155 KB

english, 1989

74

In situ investigation of TiN formation on top of TiSi2: M F C Willemsen et al,J Vac Sci Technol,B6, 1988, 53–61

Journal:

Year:

1989

Language:

english

File:

PDF, 155 KB

english, 1989

75

Properties of ion-beam-sputtered Ni/Fe artificial lattice film: Yasuhiro Nagai et al,J appl. Phys,63, 1988, 1136–1140

Journal:

Year:

1989

Language:

english

File:

PDF, 155 KB

english, 1989

76

The metastable C49 structure in sputtered TiSi2 thin films: Werner Bretscheider et al,Thin Solid Films,158, 1988, 255–263

Journal:

Year:

1989

Language:

english

File:

PDF, 155 KB

english, 1989

77

A physical model for eliminating instabilities in reactive sputtering: T Larsson et al,J Vac Sci Technol,A6, 1988, 1832–1836

Journal:

Year:

1989

Language:

english

File:

PDF, 155 KB

english, 1989

78

Effect of grain size on the oxidation kinetics of sputtered titanium nitride films: T P Thorpe et al,J Vac Sci Technol,A6, 1988, 1727–1729

Journal:

Year:

1989

Language:

english

File:

PDF, 155 KB

english, 1989

79

Properties of hard tungsten films prepared by sputtering: K K Shih et al,J Vac Sci Technol,A6, 1988, 1681–1685

Journal:

Year:

1989

Language:

english

File:

PDF, 155 KB

english, 1989

80

Deposition of vanadium oxide films by direct-current magnetron reactive sputtering: E Kusano et al,J Vac Sci Technol,A6, 1988, 1663–1667

Journal:

Year:

1989

Language:

english

File:

PDF, 155 KB

english, 1989

81

An impulsive collision model for the vibrational and rotational excitation of sputtered molecules: R De Jonge et al,Nucl Instrum Meth Phys Res,B30, 1988, 159–172

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

82

Simulation of isotopic mass effects in sputtering, II: M H Shapiro et al,Nucl Instrum Meth Phys Res,B30, 1988, 152–158

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

83

Sputtered cluster mass distributions, thermodynamic equilibrium and critical phenomena: Herbert M Urbassek,Nucl Instrum Meth Phys Res,B31, 1988, 541–550

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

84

Electrical and optical properties of indium tin oxide thin films prepared on low-temperature substrates by rf magnetron sputtering under an applied external magnetic field: H Nanto et al,J appl Phys,63, 1988, 2711–2716

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

85

A phenomenological model for surface deposition kinetics during plasma and sputter deposition of amorphous hydrogenated silicon: Mark J. Kushner,J appl Phys,62, 1987, 4763–4772

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

86

The application of dynamic recoil mixing to enhance adhesion of gold films on silica substrates: N A G Ahmed and J S Colligon,Vacuum,38, 1988, 83–88

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

87

The friction and wear of ion-implanted ceramics: the role of adhesion: S J Bull and T F Page,Nucl Instrum Meth Phys Res,B32, 1988, 91–95

Journal:

Year:

1989

Language:

english

File:

PDF, 150 KB

english, 1989

88

Ionizing beam-induced adhesion enhancement and interface chemistry for AuGaAs: C R Wie et al,Vacuum,38, 1988, 157–160

Journal:

Year:

1989

Language:

english

File:

PDF, 151 KB

english, 1989

89

Novel microstructures for the in situ measurement of mechanical properties of thin films: Mehran Mehregany et al,J appl Phys,62, 1987, 3579–3584

Journal:

Year:

1989

Language:

english

File:

PDF, 151 KB

english, 1989

90

Improved adhesion of solid lubricating films with ion-beam mixing: K Kobs et al,Philips Tech Rev,44, 1988, 24–29

Journal:

Year:

1989

Language:

english

File:

PDF, 151 KB

english, 1989

91

Fundamental irradiation processes relevant to plasma-surface technology: G Carter et al,Vacuum,38, 1988, 479–486

Journal:

Year:

1989

Language:

english

File:

PDF, 151 KB

english, 1989

92

Plasma polymerized thin films containing small silver particles: G Kampfrath et al,Vacuum,38, 1988, 1–3

Journal:

Year:

1989

Language:

english

File:

PDF, 151 KB

english, 1989

93

Ion beam bombardment effects during film deposition: S M Rossnagel and J J Cuomo,Vacuum,38, 1988, 73–81

Journal:

Year:

1989

Language:

english

File:

PDF, 151 KB

english, 1989

94

Mechanisms of contaminant particle production, migration, and adhesion: R J Miller et al,J Vac Sci Technol,A6, 1988, 2097–2102

Journal:

Year:

1989

Language:

english

File:

PDF, 151 KB

english, 1989

95

Stress modification of NiFe films by ion bombardment concurrent with film growth by alloy evaporation: P H Wojciechowski,J Vac Sci Technol,A6, 1988, 1924–1926

Journal:

Year:

1989

Language:

english

File:

PDF, 151 KB

english, 1989

96

Plasma enhanced chemical vapor deposition of polycrystalline diamond and diamondlike films: D J Vitkavage et al,J Vac Sci Technol,A6, 1988, 1812–1815

Journal:

Year:

1989

Language:

english

File:

PDF, 151 KB

english, 1989

97

Diamond films by ion-assisted deposition at room temperature: Makoto Kitabatake and Kiyotaka Wasa,J Vac Sci Technol,A6, 1988, 1793–1797

Journal:

Year:

1989

Language:

english

File:

PDF, 154 KB

english, 1989

98

Control of microstructure and properties of copper films using ion-assited deposition: R A Roy et al,J Vac Sci Technol,A6, 1988, 1621–1626

Journal:

Year:

1989

Language:

english

File:

PDF, 154 KB

english, 1989

99

Investigation of the void structure in amorphous germanium thin films as a function of low-energy ion bombardment: J E Yehoda et al,J Vac Sci Technol,A6, 1988, 1631–1635

Journal:

Year:

1989

Language:

english

File:

PDF, 154 KB

english, 1989

100

Influence of deposition parameters on the properties of boron-doped amorphous silicon-carbide films: Swati Ray et al,J appl Phys,62, 1987, 3917–3921

Journal:

Year:

1989

Language:

english

File:

PDF, 154 KB

english, 1989

101

Structural and electrical properties of silicon nitride films prepared by multipolar plasma-enhanced deposition: P Boher et al,J appl Phys,63, 1988, 1464–1472

Journal:

Year:

1989

Language:

english

File:

PDF, 154 KB

english, 1989

102

Diamond crystal growth by plasma chemical vapor deposition: C-P Chang et al,J appl Phys,63, 1988, 1744–1748

Journal:

Year:

1989

Language:

english

File:

PDF, 154 KB

english, 1989

103

Growth dynamics of aluminum nitride and aluminum oxide thin films synthesized by ion-assisted deposition: R P Netterfield et al,J appl Phys,63, 1988, 760–769

Journal:

Year:

1989

Language:

english

File:

PDF, 154 KB

english, 1989

104

A comparative study of silicon deposition from SiCl4 in cold plasma using argon, H2 or Ar+H2: R P Manory et al,Thin Solid Films,156, 1988, 79–92

Journal:

Year:

1989

Language:

english

File:

PDF, 154 KB

english, 1989

105

Electric-field-assisted deposition of optical coatings: P F Gu,Thin Solid Films,156, 1988, 153–160

Journal:

Year:

1989

Language:

english

File:

PDF, 153 KB

english, 1989

106

Inert gas entrapment in films produced by ion-assisted physical vapour deposition processes: G I Grigorov and I N Martev,Thin Solid Films,156, 1988, 265–269

Journal:

Year:

1989

Language:

english

File:

PDF, 153 KB

english, 1989

107

Morphology and structure of gold silver and copper layers obtained by sputtering during ion bombardment of targets from these metals: Miko Marinov,Thin Solid Films, 157, 1988, 315–323

Journal:

Year:

1989

Language:

english

File:

PDF, 153 KB

english, 1989

108

Low temperature growth of AIN and Al2O3 films by the simultaneous use of a microwave ion source and an ionized cluster beam system Hiroshi Takaoka et al,Thin Solid Films,157, 1988, 143–158

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1989

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109

High temperatures stability of plasma-enhanced chemically vapour deposited titanium silicide due to two-step rapid thermal annealing: Tohru Hara et al,Thin Solid Films,157, 1988, 135–142

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Year:

1989

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english

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110

Plasma deposition of amorphous hydrogenated carbon films on III–V semiconductors: John J Pouch et al,Thin Solid Films,157, 1988, 97–104

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Year:

1989

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111

Thin palladium films prepared by metal-organic plasma-enhanced chemical vapour deposition: E Feurer and H Suhr,Thin Solid Films,157, 1988, 81–86

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Year:

1989

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english

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112

Deposition of device quality silicon dioxide thin films by remote plasma enhanced chemical vapor deposition: Sang S Kim et al,J Vac Sci Technol,A6, 1988, 1740–1744

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Year:

1989

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english

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113

Variations in the reflectance of TiN, ZrN and HfN: A J Perry et al,Thin Solid Films,157, 1988, 255–265

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Year:

1989

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114

Characterization of PECVD deposited silicon oxynitride thin films: S P Speakman et al,Vacuum,38, 1988, 183–188

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Year:

1989

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english

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115

Deposition of hard carbon films by the r.f. glow discharge method: Kenji Kobayashi et al,Thin Solid Film,158, 1988, 233–238

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Year:

1989

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116

The deposition rate dependence of plasma polymerization on the radius of curvature of the substrate: H K Lintz et al,J Vac Sci Technol,A6, 1988, 1869–1871

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Year:

1989

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english

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english, 1989

117

Growth of Al and Al nitride films in N2−Ne and N2−(Ne+Ar) discharges: construction of a ternary gas phase diagram: James R Siettmann and Carolyn Rubin Aita,J Vac Sci Technol,A6, 1988, 1712–1716

Journal:

Year:

1989

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english

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english, 1989

118

Uhv linear actuators for NSLS beam lines: T Oversluizen,Vacuum,38, 1988, 27–30

Journal:

Year:

1989

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english

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english, 1989

119

New microwave ion source for multiply charged ion beam production: K Tokiguchi et al,Vacuum,38, 1988, 487–490

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Year:

1989

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english

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english, 1989

120

The development and use of a time-of-flight system to analyse energy spectra produced by a fast atom beam source: S O Saied et al,Vacuum,38, 1988, 469–473

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Year:

1989

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english

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english, 1989

121

Optimisation of the properties of a microfocused ion beam system: R J Amos et al,J Phys E: Sci Instrum,21, 1988, 86–91

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Year:

1989

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english

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122

Ion implanters: chemical and radiation safety: David G Baldwin et al,Solid State Technol,31, 1988, 99–105

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Year:

1989

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123

Broad ion beam modeling for extraction optics optimization and etching process simulation: D Korzec et al,J Vac Sci Technol,B6, 1988, 263–267

Journal:

Year:

1989

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english

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english, 1989

124

Microbeam line with 1.5 MeV helium ions and protons at Osaka: K Inoue et al,Nucl Instrum Meth Phys Res,B30, 1988, 580–591

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Year:

1989

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english

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english, 1989

125

The microbeam facility at the University of Montreal: P F Hinrichsen et al,Nucl Instrum Meth Phys Res,B30, 1988, 276–279

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Year:

1989

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english

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english, 1989

126

Activities for the construction of a new Heidelberg proton microprobe: J Scherer et al,Nucl Instrum Meth Phys Res,B30, 1988, 265–270

Journal:

Year:

1989

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127

A high ionization efficiency source for partially ionized beam deposition: S-N Mei and T-M Lu,J Vac Sci Technol,A6, 1988, 9–12

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Year:

1989

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english

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english, 1989

128

A time resolved study of velocity distributions in pulsed molecular beams: Benjamin N Eldridge and Ming L Yu,J Vac Sci Technol,A6, 1988, 1145–1149

Journal:

Year:

1989

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english

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english, 1989

129

A Monte Carlo investigation of the runaway of H+ ions in helium: S Ushiroda et al,J Phys D : Appl Phys,21, 1988, 756–762

Journal:

Year:

1989

Language:

english

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130

On the energy distribution of doubly charged atomic ions emitted from liquid metal ion sources: S Papadopoulos,J Phys D : Appl Phys,21, 1988, 194–199

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Year:

1989

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english

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english, 1989

131

The electron-beam column for a high-dose and high-voltage electronbeam exposure system Ex-7: S Tamamushi et al,J Vac Sci Technol,B6, 1988, 209–212

Journal:

Year:

1989

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english

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132

Design and performance of an UHV beamline to produce low and hyperthermal energy ion beams: D L Adler and B H Cooper,Rev Sci Instrum,59, 1988, 137–145

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1989

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english

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english, 1989

133

Scanning positron microbeam

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Year:

1989

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english, 1989

134

Low power, 3.2-cm, efficient microwave electron cyclotron resonant ion source: L Mahoney et al,Rev Sci Instrum,59, 1988, 448–452

Journal:

Year:

1989

Language:

english

File:

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english, 1989

135

Characterization of a saddle field fast atom beam source: S O Saied et al,Vacuum,38,, 1988, 111–115

Journal:

Year:

1989

Language:

english

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english, 1989

136

A solid state oxygen source for uhv: R Speidel and E-R Weidlich,Vacuum,38, 1988, 89–92

Journal:

Year:

1989

Language:

english

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english, 1989

137

Hollow-anode discharge with axial-magnetic field as an electron beam source: Vujo I Miljević,J appl Phys,63, 1988, 2237–2240

Journal:

Year:

1989

Language:

english

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english, 1989

138

Multipole lenses and their application in nuclear microprobe lens systems: D N Jamieson and G J F Legge,Nucl Instrum Meth Phys Res,B30, 1988, 235–241

Journal:

Year:

1989

Language:

english

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english, 1989

139

Focusing protons and light ions to micron and submicron dimensions: G W Grime and F Watt,Nucl Instrum Meth Phys Res,B30, 1988, 227–234

Journal:

Year:

1989

Language:

english

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english, 1989

140

Formation of buried nitride layers by ion implantation: J Danilowitsch et al,Nucl Instrum Meth Phys Res,B32, 1988, 437–439

Journal:

Year:

1989

Language:

english

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english, 1989

141

Energy dependence of concentration of implants and its chemical consequences: K Roessler and G Eich,Nucl Instrum Meth Phys Res,32, 1988, 446–452

Journal:

Year:

1989

Language:

english

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english, 1989

142

Electronic transitions in surface and near-surface radiation effects: R F Haglund Jr et al,Nucl Instrum Meth Phys Res,B32, 1988, 321–330

Journal:

Year:

1989

Language:

english

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english, 1989

143

Optically absorbing layers on ion beam modified polymers: a study of their evolution and properties: D Fink et al,Nucl Instrum Meth Phys Res,B32, 1988, 125–130

Journal:

Year:

1989

Language:

english

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english, 1989

144

Role of the modifications induced by ion beam irradiation in the optical and conducting properties of polyimide: J Davenas et al,Nucl Instrum Meth Phys Res,B32, 1988, 136–141

Journal:

Year:

1989

Language:

english

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english, 1989

145

Evidence of implantation doping in polyacetylene: J Davenas et al,Nucl Instrum Meth Phys Res,B32, 1988, 166–169

Journal:

Year:

1989

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english

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english, 1989

146

Molecular structure evolution under krypton ion irradiation of an electropolymerised polyacrylonitrile film: Michèle Raynaud et al,Nucl Instrum Meth Phys Res,B32, 1988, 173–176

Journal:

Year:

1989

Language:

english

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english, 1989

147

Thermal stability and Bi diffusion in the implanted AZ111 photoresist: R B Guimarāes et al,Nucl Instrum Meth Phys Res,B32, 1988, 419–421

Journal:

Year:

1989

Language:

english

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english, 1989

148

Buried layers of silicon oxy-nitride fabricated using ion beam synthesis: K J Reeson et al,Nucl Instrum Meth Phys Res,B32, 1988, 427–432

Journal:

Year:

1989

Language:

english

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english, 1989

149

Defects in SiO2 in buried-oxide structures formed by O+ implantation: R C Barklie et al,Nucl Instrum Meth Phys Res,B32, 1988, 433–436

Journal:

Year:

1989

Language:

english

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150

Annealing behavior of Si implanted InP: Herbert Kräutle,J appl Phys,63, 1988, 4418–4421

Journal:

Year:

1989

Language:

english

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english, 1989

151

Photoreflectance study of boron ion-implanted {100} CdTe: P M Amirtharaj et al, J Vac Sci Technol, A6, 1988, 1421–1425

Journal:

Year:

1989

Language:

english

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english, 1989

152

Secondary ion yield changes in Si and GaAs due to topography changes during O+2 or Cs+ ion bombardment: F A Stevie et al, J Vac Sci Technol, A6, 1988, 76–80

Journal:

Year:

1989

Language:

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english, 1989

153

Specimen damage by nuclear microbeams and its avoidance: J A Cookson, Nucl Instrum Meth Phys Res, B30, 1988, 324–330

Journal:

Year:

1989

Language:

english

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english, 1989

154

Effects of ion implantation on poly(dimethylsilylene-co-methyl-phenylsyilylene: R A Basher et al, Nucl Instrum Meth Phys Res, B30, 1988, 520–527

Journal:

Year:

1989

Language:

english

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english, 1989

155

Static and dynamic deformations stimulated by ion implantation: S Joneliūnas et al, Nucl Instrum Meth Phys Res, B30, 1988, 528–530

Journal:

Year:

1989

Language:

english

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english, 1989

156

Displacement damage in LiNbO3: E R Hodgson and F Agulló-López, Nucl Instrum Meth Phys Res, B32, 1988, 42–44

Journal:

Year:

1989

Language:

english

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english, 1989

157

Range distribution of implanted cesium ions in silicon dioxide films: Bruce J Fishbein and James D Plummer, J appl Phys, 63, 1988, 5887–5889

Journal:

Year:

1989

Language:

english

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english, 1989

158

Amorphous phase formation in Ni3B by low-temperature deuterium implantation: L Thomé et al, J appl Phys, 63, 1988, 722–725

Journal:

Year:

1989

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english

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english, 1989

159

Annealing behaviour of extremely low energy beryllium implantation into Ga0.47In0.53As: G Fernholz et al, Thin Solid Films, 156, 1988, 239–242

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Year:

1989

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english

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160

Cross-sectional transmission electron microscope study of intrinsic solid-phase epitaxial growth in self-ion-implanted (001) Si: C W Nieh and L J Chen, J appl Phys, 63, 1988, 575–577

Journal:

Year:

1989

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english, 1989

161

Surface cracking of vitreous fused silica induced by MeV ion beam bombardment: Chengru Shi and T A Tombrello, Radiat Effects, 105, 1988, 291–301

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Year:

1989

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english

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162

The influence of thermal relaxation on implantation induced disorder accumulation: G Carter et al, Radiat Effects, 105, 1988, 211–223

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Year:

1989

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english, 1989

163

Transverse straggling of MeV oxygen ions implanted in silicon: J J Grob et al, Nucl Instrum Meth Phys Res, B30, 1988, 34–37

Journal:

Year:

1989

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english

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164

High dose uranium ion implantation into silicon: I G Brown et al, Nucl Instrum Meth Phys Res, B31, 1988, 558–562

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Year:

1989

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165

On-line measurement of the spatial dose uniformity in ion implantation processes: Thomas Stiehler, Nucl Instrum Meth Phys Res, B31, 1988, 563–566

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Year:

1989

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166

Influence of boron related defects on activation of silicon implanted into undoped semi-insulating GaAs: Fumio Orito et al, J appl Phys, 63, 1988, 2691–2693

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Year:

1989

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167

Optical investigations of ion implant damage in silicon: R E Hummel et al, J appl Phys, 63, 1988, 2591–2594

Journal:

Year:

1989

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english, 1989

168

Ion implantation, a method for fabricating light guides in polymers: J R Kulish et al, J appl Phys, 63, 1988, 2517–2521

Journal:

Year:

1989

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169

Range measurements and thermal stability study of AZ111 photoresist implanted with Bi ions: R B Guimâraes et al, J appl Phys, 63, 1988, 2502–2506

Journal:

Year:

1989

Language:

english

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170

Transient boron diffusion in ion-implanted crystalline and amorphous silicon: T O Sedgwick et al, J appl Phys, 63, 1988, 1452–1463

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Year:

1989

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171

Formation of paramagnetic defects in high-purity silica by high-energy ions: E Dooryhee et al, J appl Phys, 63, 1988, 1399–1407

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Year:

1989

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english

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172

Radiation effects in thin films of high Tc superconductors: G J Clark et al, Nucl Instrum Meth Phys Res, B32, 1988, 405–411

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Year:

1989

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english, 1989

173

The effects of p+ implant species and dose on black gold formation: Sabri Arac et al, J Vac Sci Technol, A6, 1988, 1414–1416

Journal:

Year:

1989

Language:

english

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english, 1989

174

Radiation effects on metal-insulator-semiconductor diode energetic ion detectors: R C Hughes, J Vac Sci Technol, B6, 1988, 513–516

Journal:

Year:

1989

Language:

english

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175

Properties of AIN films deposited on N-implanted Al: Shigeo Ohira et al, Nucl Instrum Meth Phys Res.B32, 1988, 66–70

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Year:

1989

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english

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176

Characterization of H+ ion irradiated silicon carbides: Nobuya Iwamoto et al, Nucl Instrum Meth Phys Res, B32, 1988, 37–41

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Year:

1989

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177

Ion implantation and annealing of crystalline oxides and ceramic materials: C W White et al, Nucl Instrum Meth Phys Res, B32, 1988, 11–22

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Year:

1989

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english, 1989

178

An in situ annealing study of lead implanted single crystal calcium titanate: J Rankin et al, Nucl Instrum Meth Phys Res, B32, 1988, 28–31

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Year:

1989

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179

Microstructural characterization of nitrogen implanted 440C steel: F M Kustas et al, Nucl Instrum Meth Phys Res, B31, 1988, 393–401

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1989

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180

Preparation and characteristics of ZnS thin films by intense pulsed ion beam: Yutaka Shimotori et al, J appl. Phys, 63, 1988, 968–970

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Year:

1989

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181

Shattering solids by irradiating supercurrent ion beams: A D Pogrebnjak et al, Radiat Effects, 106, 1988, 209–218

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Year:

1989

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182

Range profiles of Ar implanted into C films: F Abel et al, Nucl Instrum Meth Phys Res, B30, 1988, 13–15

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Year:

1989

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183

Lattice site occupation of compound forming elements implanted into aluminium: G C Xiong et al, Nucl Instrum Meth Phys Res, B29, 1988, 643–649

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Year:

1989

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184

The effect of a thin ultraviolet grown oxide on metal-GaAs contacts: M T Schmidt et al, J Vac Sci Technol, A6, 1988, 1446–1450

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Year:

1989

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185

Characterization of molecular-beam epitaxially grown CdTe surfaces by high-energy electron diffraction and synchrotron radiation photo-emission spectroscopy: Isaac Hernández-Calderón et al, J Vac Sci Technol, A6, 1988, 1343–1347

Journal:

Year:

1989

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186

Growth of epitaxial CaSi2 films on Si(111): J F Morar and M Wittmer, J Vac Sci Technol, A6, 1988, 1340–1342

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Year:

1989

Language:

english

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187

Epitaxial silicon reactor technology—a review: M L Hammond, Solid State Technol, 31, 1988, 159–164

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Year:

1989

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english

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188

Light-enhanced molecular-beam epitaxial growth in II–VI and III–V compound semiconductors: H H Farrell et al, J Vac Sci Technol, B6, 1988, 779–781

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Year:

1989

Language:

english

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189

Growth and properties of doped CdTe films grown by photoassisted molecular-beam epitaxy: S Hwang et al, J Vac Sci Technol, B6, 1988, 777–778

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Year:

1989

Language:

english

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190

Reflection high-energy electron diffraction observations during growth of ZnSxSe1−x(0 ⩽ x ⩽ 1) by molecular-beam epitaxy: H J Cornelissen et al, J Vac Sci Technol, B6, 1988, 769–772

Journal:

Year:

1989

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191

Improvements to and characterization of GaInAs/AlInAs hetero-interfaces grown by molecular-beam epitaxy: E G Scott et al, J Vac Sci Technol, B6, 1988, 603–606

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Year:

1989

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192

Molecular-beam epitaxy growth of GaAs/InAs structures on (001)InP by alternating III/V fluxes: R Katsumi et al, J Vac Sci Technol, B6, 1988, 593–596

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Year:

1989

Language:

english

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193

Molecular-beam epitaxial growth and characterization of pseudomorphic InAs/In0.52Al0.48As quantum wells: J L de Miguel et al, J Vac Sci Technol, B6, 1988, 617–619

Journal:

Year:

1989

Language:

english

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194

Influence of substrate misorientation on defect and impurity incorporation in GaAs/AlGaAs heterostructures grown by molecular-beam epitaxy: D C Radulescu et al, J appl Phys, 63, 1988, 5115–5120

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Year:

1989

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195

Molecular stream epitaxy and the role of the boundary layer in chemical vapor deposition: T Katsuyama and S M Bedair, J appl Phys, 63, 1988, 5098–6103

Journal:

Year:

1989

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english

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196

Seed shape dependence of Si solid-phase epitaxy : preferential facet growth: Eiichi Murakami et al, J appl Phys, 63, 1988, 4975–4978

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Year:

1989

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197

Optical properties of molecular beam epitaxially grown GaAs1−xSbx (0 < x < 0.5) on GaAs and InP substrates: D Huang et al, J appl Phys, 63, 1988, 5859–5862

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Year:

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198

Ultrahigh vacuum in situ transmission electron microscopy observations of molecular-beam epitaxially grown InSb(111): M Yata et al, J appl Phys, 63, 1988, 5751–5755

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Year:

1989

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english

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199

Growth and characterization of Si1−xGex and Ge epilayers on (100) Si: J M Baribeau et al, J appl Phys, 63, 1988, 5738–5746

Journal:

Year:

1989

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english

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200

Growth and structure of chemical vapor deposited silicon carbide from methyltrichlorosilane and hydrogen in the temperature range of 1100 to 1400°C: Myoung Gi So and John S Chun, J Vac Sci Technol, A6, 1988, 5–8

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201

Epitaxial growth and X-ray structural characterization of Zn1−xFexSe films on GaAs(001): B T Jonker et al, J Vac Sci Technol, A6, 1988, 1946–1949

Journal:

Year:

1989

Language:

english

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202

Issues in molecular-beam epitaxy kinetics of compound semiconductor based heterostructures: Jasprit Singh and K K Bajaj, J Vac Sci Technol, A6, 1988, 2022–2028

Journal:

Year:

1989

Language:

english

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203

GaAs surface cleaning by thermal oxidation and sublimation in molecular-beam epitaxy: Junji Saito et al, J appl Phys, 63, 1988, 404–409

Journal:

Year:

1989

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204

Growth and characterization of AlGaInAs lattice matched to InP grown by molecular-beam epitaxy: J P Praseuth et al, J appl Phys, 63, 1988, 400–403

Journal:

Year:

1989

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english

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205

Charge transfer adsorption in silicon vapor-phase epitaxial growth: A Ishitani et al, J appl Phys, 63, 1988, 390–394

Journal:

Year:

1989

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206

Optical and structural characteristics of Al2O3 films deposited by the reactive ionized cluster beam method: H Hashimoto et al, J appl Phys, 63, 1988, 241–244

Journal:

Year:

1989

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english

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207

Low-temperature annealing of As-implanted Ge: S V Hattangady et al, J appl Phys, 63, 1988, 68–74

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Year:

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208

Ga0.5In0.5P/GaAs interfaces by organometallic vapor-phase epitaxy: D P Bour et al, J appl Phys, 63, 1988, 1241–1243

Journal:

Year:

1989

Language:

english

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209

Localized epitaxial growth of IrSi3 on (111) and (001) silicon: J J Chu et al, J appl Phys, 63, 1988, 1163–1167

Journal:

Year:

1989

Language:

english

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210

Density of ZnS thin films grown by atomic layer epitaxy: M Oikkonen et al, J appl Phys, 63, 1988, 1070–1074

Journal:

Year:

1989

Language:

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211

A novel heteroepitaxy method of Ge films on CaF2 by electron beam exposure: Seigo Kanemaru et al, J appl Phys, 63, 1988, 1060–1064

Journal:

Year:

1989

Language:

english

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212

Large grain polycrystalline silicon by low-temperature annealing of low-pressure chemical vapor deposited amorphous silicon films: Miltiadis K Hatalis and David W Greve, J appl Phys, 63, 1988, 2260–2266

Journal:

Year:

1989

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213

Crystallization of SiO by HE+ bombardment: M D Walters et al, Radiat Effects, 106, 1988, 189–201

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214

Photoluminescence spectra of highly doped AlxGa1−xAs grown by molecular-beam epitaxy: Junko Ogawa et al, J appl Phys, 63, 1988, 2765–2768

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1989

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GaP/Si heteroepitaxy by complex ion beam sputtering: F Ishizuka et al, J appl Phys, 63, 1988, 2091–2093

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216

Growth kinetics and step density in reflection high-energy electron diffraction during molecular-beam epitaxy: Shaun Clarke and Dimitri D Vvedensky, J appl Phys, 63, 1988, 2272–2283

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217

Interfacial reactions in the Ti/GaAs system: Ki Bum Kim et al, J Vac Sci Technol, A6, 1988, 1473–1477

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218

Diffusion model for Ohmic contacts to GaAs: A K Kulkarni and C Lai, J Vac Sci Technol, A6, 1988, 1531–1534

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219

Chemical reactions at the Si/GaAs(110) and Si/InP(110) interfaces : effects on valence-band discontinuity measurements: R S List et al, J Vac Sci Technol, A6, 1988, 1543–1547

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Metal/semiconductor interfaces on SnO2(110): J W Erickson et al, J Vac Sci Technol, A6, 1988, 1593–1598

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1989

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221

Tungsten-rhenium alloys as diffusion barriers between aluminum and silicon: S E Hörnström et al, J Vac Sci Technol, A6, 1988, 1650–1655

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222

Thermochemical modeling of interfacial reactions and selective deposition at growth from the vapor: J O Carlsson, J Vac Sci Technol, A6, 1988, 1656–1662

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1989

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223

Kinetics and mechanism of reaction at room temperature in thin Au/metal couples: Z̆. Marinković and V Simić, Thin Solid Films, 156, 1988, 105–115

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1989

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224

The interaction of copper and nickel : nickel monolayers on a Cu{100} single crystal: M A Morris et al, Thin Solid Films, 156, 1988, 65–78

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1989

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225

The oxidation of PtSi, Pt2Si and polycrystalline silicon in ultrahigh vacuum residual gas: H C Swart et al, Thin Solid Films, 158, 1988, 61–67

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1989

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226

Intermixing of Co/GdxOy thin films on Kapton polyimide: Kartik Shanker et al, Thin Solid Films, 157, 1988, 223–231

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1989

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227

Effect of mixing ions on the formation process of β-SiC fabricated by ion beam mixing: Tadamasa Kimura et al, Thin Solid Films, 157, 1988, 117–127

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1989

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228

Reactive and nonreactive ion mixing of Ti films on carbon substrates: A A Galuska et al, J Vac Sci Technol, A6, 1988, 110–122

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1989

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229

Ion mixing of Al2O3 and Al films on SiO2: A A Galuska et al, J Vac Sci Technol, A6, 1988, 185–192

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1989

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230

Transient annealing of Sn+ implanted GaAs: M A Shahid et al, Nucl Instrum Meth Phys Res, B30, 1988, 531–539

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1989

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231

Ion-induced mixing at Nb/Fe2O3 interface studied by CEMS technique: J Li and B X Liu, Nucl Instrum Meth Phys Res, B31, 1988, 407–411

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1989

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232

Analysis of grain growth due to ion irradiation of thin films: A M Ibrahim, Nucl Instrum Meth Phys Res, B29, 1988, 650–652

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1989

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233

Superconducting and transport properties and the mixing process in Al/Si multilayer films: Xiao-Xing Xi et al, Nucl Instrum Meth Phys Res, B30, 1988, 56–60

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Year:

1989

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234

Diffusion of boron, phosphorus and arsenic implanted in thin films of cobalt disilicide: O Thomas et al, J Vac Sci Technol, A6, 1988, 1736–1739

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Year:

1989

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235

Mixing of Pt-René N4 alloy under Pt+ bombardment: V Srinivasan and R S Bhattacharya, J appl Phys, 63, 1988, 2257–2259

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1989

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236

Interactions between interstitial atoms in silicon : arsenic-argon-boron and boron-argon-phosphorus: S Aronowitz, J appl Phys, 63, 1988, 1037–1040

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1989

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237

Interdiffusion and structural relaxation in Mo/Si multilayer films: Hideo Nakajima et al, J appl Phys, 63, 1988, 1046–1051

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1989

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238

Platinum silicide contact to arsenic-doped polycrystalline silicon: H-C W Huang et al, J appl Phys, 63, 1988, 1111–1116

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1989

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239

Ion beam mixing of GaAs with films of Al, Si and their nitrides: R Fastow et al, J appl Phys, 63, 1988, 2586–2590

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1989

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240

Reflection electron microscopy observation of the Si-SiO2 interface: Kouichirou Honda et al, J appl Phys, 63, 1988, 2637–2640

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1989

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241

Silicon and silicon dioxide thermal bonding for silicon-on-insulator applications: R D Black et al, J appl Phys, 63, 1988, 2773–2777

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1989

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242

The formation of an amorphous silicide by thermal reaction of sputter-deposited Ti and Si layers: Ivo J M M Raajimakers et al, J appl Phys, 63, 1988, 2790–2795

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1989

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243

Reordering of polycrystalline Pd2Si on epitaxial Pd2Si: C M Comrie et al, J appl Phys, 63, 1988, 2402–2405

Journal:

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1989

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244

Annealing behavior of refractory metal multilayers on Si : the Mo/Ti and W/Ti systems: E Puppin et al, J appl Phys, 63, 1988, 2414–2419

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1989

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245

Ion mixing and thermochemical properties of tracers in Ag: E Ma et al, J appl Phys, 63, 1988, 2449–2451

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1989

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246

Metastable bismuth-iron alloy films synthesized with ion mixing and magnetron copsuttering: Quing-Ming Chen et al, J appl Phys, 63, 1988, 2452–2453

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1989

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247

Charge-transfer dipole moments at the Si-SiO2 interface: Hisham Z Massoud, J appl Phys, 63, 1988, 2000–2005

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1989

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248

Titanium silicides formed by rapid thermal vacuum processing: C X Dexin et al, J appl Phys, 63, 1988, 2171–2173

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1989

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249

Reactive and chemically assisted ion beam etching of Si and SiO2: M A Carter and G F Goldspink, Vacuum, 38, 1988, 5–10

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250

Magnetron-plasma ion beam etching : a new dry etching technique: J D Chinn, J Vac Sci Technol, A6, 1988, 1379–1383

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Chemically enhanced ion etching on refractory metal silicides: W L O'Brien et al, J Vac Sci Technol, A6, 1988, 1384–1387

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Effects of plasma stripping on the oxidation states of aluminum-silicon and tungsten surfaces: J Hackenberg and J Linn, J Vac Sci Technol, A6, 1988, 1388–1392

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1989

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253

Valence-band photoemission and electron-energy-loss studies of reactive ion etched silicon dioxide: S W Robey and G S Oehrlein, J Vac Sci Technol, A6, 1988, 1503–1507

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254

Plasma etching with a microwave cavity plasma disk source: J Hopwood et al, J Vac Sci Technol, B6, 1988, 268–271

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255

Anisotropy of low-energy ion etching via electron cyclotron resonance plasma: Y Tobinaga et al, J Vac Sci Technol, B6, 1988, 272–276

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Electrical damage induced by ion beam etching of GaAs: A Scherer et al, J Vac Sci Technol, B6, 1988, 277–279

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Effects of dry etching on the electrical properties of silicon: J M Heddleson et al, J Vac Sci Technol, B6, 1988, 280–283

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1989

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258

Spectroscopic studies of fluorescent emission in plasma etching of silicon nitride: D Field et al, J Vac Sci Technol, B6, 1988, 551–558

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259

Controlled etching of silicate glasses by pulsed ultraviolet laser radiation: B Braren and R Srinivasan, J Vac Sci Technol, B6, 1988, 537–541

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1989

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260

A new ultrafine groove fabrication method utilizing electron cyclotron resonance plasma deposition and reactive ion etching: Shigehisa Ohki et al, J Vac Sci Technol, B6, 1988, 533–536

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Year:

1989

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Electron-beam lithography system using a quadrupole triplet: Shigeo Okayama, J Vac Sci Technol, B6, 1988, 199–203

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1989

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High-precision reticle making by electron-beam lithography: Shin-ichi Hamaguchi et al, J Vac Sci Technol, B6, 1988, 204–208

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1989

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263

Plasma-assisted etching of tungsten films : a quartz-crystal micro-balance study: F Fracassi and J W Coburn, J appl Phys, 63, 1988, 1758–1761

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1989

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Wet-chemical etching of III–V semiconductors: J J Kelly et al, Philips Tech Rev, 44, 1988, 61–74

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1989

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Phenomena produced by ion bombardment in plasma-assisted etching environments: Harold F. Winters, J Vac Sci Technol, A6, 1988, 1997–2000

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Year:

1989

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266

Fluctuations during JET discharges with H-mode: M Malacarne et al, Plasma Phys Control Fusion, 29, 1987, 1675–1686

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1989

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O+, O+2, O+3 and O+4 ions in Ar-O2 sputtering discharges : comments on “Oxidation mechanism in rf CO2 plasma”, Vacuum, 36, 85 (1986): Carolyn Rubin Aita and Michel E Marhic, Vacuum, 38, 1988, 37–38

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Ion emission from plasma-focus facilities: M Sadowski et al, Plasma Phys Control Fusion, 30, 1988, 763–769

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1989

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Self-similar expansions in ion beam fusion: A Barrero and A Fernández, Plasma Phys Control Fusion, 29, 1987, 1605–1613

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1989

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Time of flight measurements of the ratio of radial diffusion coefficient and mobility for electron swarms in helium, argon, neon and krypton at high E/N: S A J Al-Amin and J Lucas, J Phys D: Appl Phys, 20, 1987, 1590–1595

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Year:

1989

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Plasma oscillation modes in a low-pressure plane positive column: D A Shapiro, J Phys D: Appl Phys, 20, 1987, 1230–1231

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1989

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Striations in a gas discharge: F C van den Heuvel, Philips Tech Rev, 44, 1988, 89–95

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Monte Carlo simulation of ion transport through rf glow-discharge sheaths: Brian E Thompson et al, J appl Phys, 63, 1988, 2241–2251

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1989

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274

Electron energy distributions in oxygen microwave plasmas: J E Heidenreich III et al, J Vac Sci Technol, B6, 1988, 288–292

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Year:

1989

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275

An 18O study of oxygen exchange phenomena during microwave-discharge plasma oxidation of silicon: Shin-ichiro Kimura et al, J appl Phys, 63, 1988, 4655–4660

Journal:

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1989

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276

Magnetic field gradient effects on ion energy for electron cyclotron resonance microwave plasma stream: Morito Matsuoka and Ken'ichi Ono, J Vac Sci Technol, A6, 1988, 25–29

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Year:

1989

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277

Coherent meson production relativistic heavy-ion collision: Dipak Ghosh et al, Can J Phys, 66, 1988, 26–28

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1989

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278

Secondary ion beam profile calculations in a 252Cf plasma desorption time-of-light mass spectrometer: F Riggi, Nucl Instrum Meth Phys Res, B31, 1988, 588–591

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Year:

1989

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279

Nondiffusive velocity broadening in ion energy analyzer operation: H Fujita et al, J appl Phys, 63, 1988, 308–314

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1989

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280

Novel approach for particle velocity and size measurement under plasma conditions: Tadahiro Sakuta and Maher I Boulos, Rev Sci Instrum, 59, 1988, 285–291

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Year:

1989

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Magnetron plasma diagnostics and processing implications: S M Rossnagel, J Vac Sci Technol, A6, 1988, 1821–1826

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1989

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Characterization of the silicon-on-insulator material formed by high-dose oxygen implantation using spectroscopic ellipsometry: F Ferrieu et al, J appl Phys, 62, 1987, 3458–3461

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Year:

1989

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283

(111) random and 〈110〉 channeled implantation profiles and range parameters in Hg1−xCdxTe: R G Wilson, J appl Phys, 63, 1988, 5302–5311

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Year:

1989

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Channeling simulation in Ni3Al: John H Barrett, Nucl Instrum. Meth Phys Res, B30, 1988, 546–550

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Year:

1989

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Measurement of the electronic stopping power of gold for protons in a large solid angle transmission geometry: D Semrad et al, Radiat Effects, 104, 1987, 67–79

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1989

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286

Range profiles of helium in solids: D Fink et al, Radiat Effects, 104, 1987, 1–42

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Year:

1989

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287

Quantitative analysis of channeling data for the determination of the amorphous fraction in ion bombarded single crystals: A Benyagoub and L Thomé, Radiat Effects, 105, 1987, 9–15

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Year:

1989

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Effects of energy straggling on surface analysis with fast ion beams: Akira Kawano and Yoshiaki Kido, J appl Phys, 63, 1988, 75–79

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Year:

1989

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289

Low-energy electronic stopping for boron in beryllium: C R Gossett et al, Radiat Effects, 105, 1988, 285–289

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1989

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english

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290

Distribution of energy in polymers due to incident electrons and protons: M L Rustgi et al, Radiat Effects, 105, 1988, 303–311

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1989

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291

Stopping powers of Be, Al, Ti, V, Fe, Co, Ni, Cu, Zn, Mo, Rh, Ag, Sn, Ta, Pt and Au for 6.5 MeV protons: R Ishiwari et al, Nucl Instrum Meth Phys Res, B31, 1988, 503–517

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1989

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292

Grazing X-ray reflectometry and Rutherford backscattering : two complementary techniques for the study of thin film mixing: M G Le Boité et al, Nucl Instrum Meth Phys Res, B29, 1988, 653–660

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Year:

1989

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Characterization of SrF2 thin films and of SrF2/InP structures: A S Barriere et al, Thin Solid Films, 158, 1988, 81–91

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Year:

1989

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english

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294

Organometallic chemical vapor phase deposition of “Mn2Si”: G T Stauf et al, Thin Solid Films, 156, 1988, 327–336

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Year:

1989

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295

Electron emission from electroformed carbon films: H Araki and T Hanawa, Vacuum, 38, 1988, 31–35

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1989

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296

Secondary ion mass spectrometry sensitivity factors versus ionization potential and electron affinity for many elements in HgCdTe and CdTe using oxygen and cesium ion beams: R G Wilson, J appl Phys, 63, 1988, 5121–5125

Journal:

Year:

1989

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english

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Ion microscopy using magnifying ion transport systems and position sensitive detectors: S S Klein and P H A Mutsaers, Nucl Instrum Meth Phys Res, B30, 1988, 349–355

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Year:

1989

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english

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298

Quantitative analysis and depth profiling of rare gases in solids by secondary-ion mass spectrometry : detection of (CsR)+ molecular ions (R = rare gas): M A Ray et al, J Vac Sci Technol, A6, 1988, 44–50

Journal:

Year:

1989

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299

Variation of yield with thickness in SIMS and PDMS : measurements of secondary ion emission from organized molecular films: G Bolbach et al, Nucl Instrum Meth Phys Res, B30, 1988, 74–82

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Year:

1989

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Helium diffraction from (2 x n) structures on Si(001): D M Rohlfing et al, Vacuum, 38, 1988, 287–289

Journal:

Year:

1989

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english

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english, 1989

301

Atomic beam scattering: N V Richardson, Vacuum, 38, 1988, 279–285

Journal:

Year:

1989

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english

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english, 1989

302

Unconstrained optimization in LEED : application to Ge(111) (1 x 1)-H: S P Tear and P G Cowell, Vacuum, 38, 1988, 219–221

Journal:

Year:

1989

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english

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303

Application of reflectance difference spectroscopy to molecular-beam epitaxy growth of GaAs and AlAs: D E Aspnes et al, J Vac Sci Technol, A6, 1988, 1327–1332

Journal:

Year:

1989

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english

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304

Reflection high-energy electron diffraction studies of principal streak intensity profiles and adatom coverage of (100) GaAs grown by molecular-beam epitaxy: C W Farley and B G Streetman, J Vac Sci Technol, B6, 1988, 749–753

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Year:

1989

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305

Medium-energy ion scattering studies of relaxation at metal surfaces: S M Yalisove and W R Graham, J Vac Sci Technol, A6, 1988, 588–596

Journal:

Year:

1989

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english

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306

Scanning differential polarization microscope : its use to image linear and circular differential scattering: William Mickols and Marcos F Maestre, Rev Sci Instrum, 59, 1988, 867–872

Journal:

Year:

1989

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english

File:

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307

Auger electron spectroscopy : method for the accurate measurement of signal and noise and a figure of merit for the performance of AES instrument sensitivity: M P Seah and C P Hunt, Rev Sci Instrum, 59, 1988, 217–227

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Year:

1989

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english

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english, 1989

308

Etching on polar (111) surfaces of CdTe crystals studied with Auger electron spectroscopy: Y-C Lu et al, J appl Phys, 62, 1987, 4453–4459

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Year:

1989

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english

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english, 1989

309

Tunneling microscopy of NbSe2 in air: D C Dahn et al, J appl Phys, 63, 1988, 315–318

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Year:

1989

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english

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english, 1989

310

Concentric tube scanning tunneling microscope: C W Snyder and A L de Lozanne, Rev Sci Instrum, 59, 1988, 541–544

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Year:

1989

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english

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english, 1989

311

“Tracking” tunneling microscopy: D W Pohl and R Möller, Rev Sci Instrum, 59, 1988, 840–842

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Year:

1989

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english

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english, 1989

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Low-temperature atomic force microscopy: M D Kirk et al, Rev Sci Instrum, 59, 1988, 833–835

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Year:

1989

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english

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english, 1989

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Image charge focusing of relativistic electron beams: S Humphries, Jr and Carl B Ekdahl, J appl Phys, 63, 1988, 583–585

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1989

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Scanning electron microscopy study of seeded recrystallization of silicon-on-insulator layers with either polycrystalline or epitaxially deposited silicon in the seed windows: D A Smith et al, J appl Phys, 63, 1988, 1438–1441

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Year:

1989

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Application of the scanning tunneling microscope to insulating surfaces: R C Jaklevic et al, J Vac Sci Technol, A6, 1988, 448–453

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Year:

1989

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The effect of cooling rate on the surface reconstruction of annealed silicon(111) studied by scanning tunneling microscopy and low-energy electron diffraction: M D Pashley et al, J Vac Sci Technol, A6, 1988, 488–492

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1989

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Study of metal surfaces by scanning tunneling microscopy with field ion microscopy: Y Kuk et al, J Vac Sci Technol, A6, 1988, 524–528

Journal:

Year:

1989

Language:

english

File:

PDF, 153 KB

english, 1989

318

Scanning tunneling microscopy of graphite adsorbed metal species and sliding charge-density wave systems: J W Lyding et al, J Vac Sci Technol, A6, 1988, 363–367

Journal:

Year:

1989

Language:

english

File:

PDF, 153 KB

english, 1989

319

Tip contamination effects in ambient pressure scanning tunneling microscopy imaging of graphite: T Tiedje et al, J Vac Sci Technol, A6, 1988, 372–375

Journal:

Year:

1989

Language:

english

File:

PDF, 153 KB

english, 1989

320

A high-performance scanning tunneling microscope: M P Cox and P R Griffin, J Vac Sci Technol, A6, 1988, 376–378

Journal:

Year:

1989

Language:

english

File:

PDF, 153 KB

english, 1989

321

A new symmetric scanning tunneling microscope design: P Davidson et al, J Vac Sci Technol, A6, 1988, 380–382

Journal:

Year:

1989

Language:

english

File:

PDF, 153 KB

english, 1989

322

Scanning tunneling microscopy topography of electron-beam evaporated niobium thin films in Nb-NbOx-Pb tunnel junctions on quartz substrates: D G Walmsley et al, J Vac Sci Technol, A6, 1988, 404–407

Journal:

Year:

1989

Language:

english

File:

PDF, 153 KB

english, 1989

323

Scanning tunneling microscopy imaging of microbridges under scanning electron microscopy control: M Anders et al, J Vac Sci Technol, A6, 1988, 436–439

Journal:

Year:

1989

Language:

english

File:

PDF, 153 KB

english, 1989

324

Observation of microfabricated patterns by scanning tunneling microscopy: S Okayama et al, J Vac Sci Technol, A6, 1988, 440–444

Journal:

Year:

1989

Language:

english

File:

PDF, 153 KB

english, 1989

325

Surface analysis of bulk polymers using single- and multiple-photon ionization: U Schühle et al, J Vac Sci Technol, A6, 1988, 936–940

Journal:

Year:

1989

Language:

english

File:

PDF, 161 KB

english, 1989

326

Surface chemical analysis of polydiacetylene films exposed to electron beam and ultraviolet irradiation: R J Colton et al, J Vac Sci Technol, A6, 1988, 933–935

Journal:

Year:

1989

Language:

english

File:

PDF, 161 KB

english, 1989

327

Low-energy neutral/ion backscattering at As/Si(001): H Niehus et al, J Vac Sci Technol, A6, 1988, 625–629

Journal:

Year:

1989

Language:

english

File:

PDF, 161 KB

english, 1989

328

X-ray photoemission spectroscopy characterization of silicon surfaces after CF4/H2 magnetron ion etching : comparisons to reactive ion etching: Gottlieb S Oehrlein et al, J Vac Sci Technol, A6, 1988, 1989–1993

Journal:

Year:

1989

Language:

english

File:

PDF, 161 KB

english, 1989

329

Dependence of microstructure of TiN coatings on their thickness: V Valvoda et al, Thin Solid Films, 158, 1988, 225–232

Journal:

Year:

1989

Language:

english

File:

PDF, 161 KB

english, 1989

330

The design of a versatile scanning proton microprobe of high resolution and efficiency: G J F Legge et al, Nucl Instrum Meth Phys Res, B30, 1988, 252–259

Journal:

Year:

1989

Language:

english

File:

PDF, 161 KB

english, 1989

331

Annealed Czochralski grown silicon crystals : a new material for the monochromatisation of synchrotron radiation and X-rays above 60 keV: J R Schneider et al, Nucl Instrum Meth Phys Res, B29, 1988, 661–674

Journal:

Year:

1989

Language:

english

File:

PDF, 161 KB

english, 1989

332

Narrowband filters for precision monochromatic light sources

Journal:

Year:

1989

Language:

english

File:

PDF, 106 KB

english, 1989

333

New Pirani gauge from MKS

Journal:

Year:

1989

Language:

english

File:

PDF, 106 KB

english, 1989

334

New MKS flowmeter calibration system

Journal:

Year:

1989

Language:

english

File:

PDF, 106 KB

english, 1989

335

VAT series 14 gate valves

Journal:

Year:

1989

Language:

english

File:

PDF, 141 KB

english, 1989

336

High performance hoses and ‘O’-rings from safelab

Journal:

Year:

1989

Language:

english

File:

PDF, 141 KB

english, 1989

337

High performance SIMS

Journal:

Year:

1989

Language:

english

File:

PDF, 310 KB

english, 1989

338

Vacuum furnace for steel powder atomising

Journal:

Year:

1989

Language:

english

File:

PDF, 99 KB

english, 1989

339

Cryo-Torr product folder

Journal:

Year:

1989

Language:

english

File:

PDF, 99 KB

english, 1989

340

Accessories increase leak detector's versatility

Journal:

Year:

1989

Language:

english

File:

PDF, 99 KB

english, 1989

341

News for users of high vacuum systems—vacuum leadthoughs now on ISO standard flanges

Journal:

Year:

1989

Language:

english

File:

PDF, 339 KB

english, 1989

342

A complete range of turbo control and power supplies

Journal:

Year:

1989

Language:

english

File:

PDF, 239 KB

english, 1989

343

New Pirani vacuum sensor has integral transmitter

Journal:

Year:

1989

Language:

english

File:

PDF, 343 KB

english, 1989

344

Automatic leak detector and needs no liquid nitrogen

Journal:

Year:

1989

Language:

english

File:

PDF, 105 KB

english, 1989

345

Balzers introduces all-in-one cryo preparation chamber

Journal:

Year:

1989

Language:

english

File:

PDF, 105 KB

english, 1989

346

Graham Kinney pumps for Saudi

Journal:

Year:

1989

Language:

english

File:

PDF, 103 KB

english, 1989

347

New Graham Kinney technical brochure

Journal:

Year:

1989

Language:

english

File:

PDF, 103 KB

english, 1989

348

New Cambridge headquarters for Torvac and Wentgate

Journal:

Year:

1989

Language:

english

File:

PDF, 103 KB

english, 1989

349

Spectron finds leak in Oxford street megastore

Journal:

Year:

1989

Language:

english

File:

PDF, 281 KB

english, 1989

350

Torvac now offers comprehensive furnace capability

Journal:

Year:

1989

Language:

english

File:

PDF, 178 KB

english, 1989

351

Veeco instruments appoints new UK sales manager

Journal:

Year:

1989

Language:

english

File:

PDF, 149 KB

english, 1989

352

UHV system aids MIT's research into high temperature superconductors

Journal:

Year:

1989

Language:

english

File:

PDF, 383 KB

english, 1989

353

Balzers publishes 1988 literature index

Journal:

Year:

1989

Language:

english

File:

PDF, 236 KB

english, 1989

354

Oxford applied research ‘new review’ winter

Journal:

Year:

1989

Language:

english

File:

PDF, 84 KB

english, 1989

355

Edwards news no 17

Journal:

Year:

1989

Language:

english

File:

PDF, 84 KB

english, 1989

356

Jacques Friedel to receive 1988 Von Hippel award of Materials Research Society

Journal:

Year:

1989

Language:

english

File:

PDF, 84 KB

english, 1989

357

Annoucements

Journal:

Year:

1989

Language:

english

File:

PDF, 98 KB

english, 1989

358

Total and partial pressure measurement in vacuum systems: J H Leck, Blakie & Sons Ltd, Glasgow, 1988 201 pp. Price £45

W. Steckelmacher

Journal:

Year:

1989

Language:

english

File:

PDF, 133 KB

english, 1989

359

Methods of surface analysis (techniques and applications): J M Walls (ed), Cambridge University Press, 1989 342 pp. Price £45.00

W. Steckelmacher

Journal:

Year:

1989

Language:

english

File:

PDF, 133 KB

english, 1989

360

Physics at surfaces: A Zangwill, Cambridge University Press, 1988 454 pp. Price £40.00 (hardcovers), £15.00 (paperback)

W. Steckelmacher

Journal:

Year:

1989

Language:

english

File:

PDF, 198 KB

english, 1989

361

Molecular flow in complex vacuum systems: G L Saksaganskii, Gordon and Breach, Science Publishers, NY, 1988. xii + 162 pp. Price $89.00 (list), $42.00 (textbook)

W. Steckelmacher

Journal:

Year:

1989

Language:

english

File:

PDF, 67 KB

english, 1989

362

New patent

Journal:

Year:

1989

Language:

english

File:

PDF, 87 KB

english, 1989

363

Editorial: Software survey section

Journal:

Year:

1989

Language:

english

File:

PDF, 38 KB

english, 1989