Volume 24; Issue 4

IEEE Electron Device Letters

Volume 24; Issue 4

1

Statistics of successive breakdown events in gate oxides

Sune, J., Wu, E.Y.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 329 KB

english, 2003

2

High performance fully-depleted tri-gate CMOS transistors

Doyle, B.S., Datta, S., Doczy, M., Hareland, S., Jin, B., Kavalieros, J., Linton, T., Murthy, A., Rios, R., Chau, R.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 433 KB

english, 2003

3

Influence of high channel doping on the inversion layer electron mobility in strained silicon n-MOSFETs

Nayfeh, H.M., Leitz, C.W., Pitera, A.J., Fitzgerald, E.A., Hoyt, J.L., Antoniadis, D.A.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 296 KB

english, 2003

4

Physical and electrical characteristics of HfN gate electrode for advanced MOS devices

Yu, H.Y., Lim, H.F., Chen, J.H., Li, M.F., Chunxiang Zhu,, Tung, C.H., Du, A.Y., Wang, W.D., Chi, D.Z., Kwong, D.-L.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 272 KB

english, 2003

5

Indium out-diffusion from silicon during rapid thermal annealing

Hong-Jyh Li,, Bennett, J., Zeitzoff, P., Kirichenko, T.A., Banerjee, S.K., Henke, D.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 248 KB

english, 2003

6

RF characterization of metal T-gate structure in fully-depleted SOI CMOS technology

Sang Lam,, Hui Wan,, Pin Su,, Wyatt, P.W., Chen, C.L., Niknejad, A.M., Chenming Hu,, Ko, P.K., Chan, M.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 329 KB

english, 2003

7

RF MEMS switches fabricated on microwave-laminate printed circuit boards

Hung-Pin Chang,, Jiangyuan Qian,, Cetiner, B.A., De Flaviis, F., Bachman, M., Li, G.P.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 519 KB

english, 2003

8

Improvement of InGaN/GaN laser diodes by using a Si-doped In/sub 0.23/Ga/sub 0.77/N/GaN short-period superlattice tunneling contact layer

. Ru-chin Tu, . Chun-ju Tun, J. Sheu, . Wei-hong Kuo, . Te-chung Wang, . Ching-en Tsai, . Jung-tsung Hsu, J. Chi, . Gou-chung Chi

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 267 KB

english, 2003

9

A new combination-erase technique for erasing nitride based (SONOS) nonvolatile memories

Chindalore, G.L., Swift, C.T., Burnett, D.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 249 KB

english, 2003

10

A novel germanium doping method for fabrication of high-performance p-channel poly-Si1-xGex TFT by excimer laser crystallization

Ting-Kuo Chang,, Fang-Tsun Chu,, Ching-Wei Lin,, Chang-Ho Tseng,, Huang-Chung Cheng,

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 352 KB

english, 2003

11

Hot carrier analysis in low-temperature poly-Si thin-film transistors using pico-second time-resolved emission microscope

Uraoka, Y., Hirai, N., Yano, H., Hatayama, T., Fuyuki, T.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 224 KB

english, 2003

12

Substrate bias dependence of breakdown progression in ultrathin oxide pMOSFETs

Tsai, C.W., Chen, M.C., Gu, S.H., Tahui Wang,

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 235 KB

english, 2003

13

The enhancement of Q factor in RPCVD SiGe varactors by the structural modification of the base-collector junction

Bongki Mheen,, Dongwoo Suh,, Sang Hoon Kim,, Kyu-Hwan Shim,, Jin-Yeong Kang,, Songcheol Hong,

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 384 KB

english, 2003

14

[110] strained-SOI n-MOSFETs with higher electron mobility

Mizuno, T., Sugiyama, N., Tezuka, T., Takagi, S.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 322 KB

english, 2003

15

Performance of polysilicon gate HfO2 MOSFETs on [100] and [111] silicon substrates

Onishi, K., Chang Seok Kang,, Rino Choi,, Hag-Ju Cho,, Young Hee Kim,, Krishnan, S., Akbar, M.S., Lee, J.C.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 242 KB

english, 2003

16

The effect of dimensional scaling on the erase characteristics of NOR flash memory

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 276 KB

english, 2003

17

Electrical properties and thermal stability of CVD HfOxNy gate dielectric with poly-Si gate electrode

Choi, C.H., Jeon, T.S., Clark, R., Kwong, D.L.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 318 KB

english, 2003

18

Integrated solenoid inductors with patterned, sputter-deposited Cr/Fe/sub 10/Co/sub 90//Cr ferromagnetic cores

Yan Zhuang,, Rejaei, B., Boellaard, E., Vroubel, M., Burghartz, J.N.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 282 KB

english, 2003

19

GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

Chang, S.J., Lee, M.L., Sheu, J.K., Lai, W.C., Su, Y.K., Chang, C.S., Kao, C.J., Chi, G.C., Tsai, J.M.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 245 KB

english, 2003

20

New insights into the relation between channel hot carrier degradation and oxide breakdown short channel nMOSFETs

Crupi, F., Kaczer, B., Groeseneken, G., De Keersgieter, A.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 261 KB

english, 2003

21

GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

Ye, P.D., Wilk, G.D., Kwo, J., Yang, B., Gossmann, H.-J.L., Frei, M., Chu, S.N.G., Mannaerts, J.P., Sergent, M., Hong, M., Ng, K.K., Bude, J.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 312 KB

english, 2003

22

Simultaneous hot-hole injection at drain and source for efficient erase and excellent endurance in SONOS flash EEPROM cells

Myung Kwan Cho,, Kim, D.M.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 237 KB

english, 2003

23

Correcting effective mobility measurements for the presence of significant gate leakage current

Zeitzoff, P.M., Young, C.D., Brown, G.A., Yudong Kim,

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 310 KB

english, 2003

24

Electrical characteristics of epitaxially grown SrTiO3 on silicon for metal-insulator-semiconductor gate dielectric applications

Sanghun Jeon,, Walker, F.J., Billman, C.A., McKee, R.A., Hyunsang Hwang,

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 304 KB

english, 2003

25

Electrical characterization of germanium p-channel MOSFETs

Shang, H., Okorn-Schimdt, H., Ott, J., Kozlowski, P., Steen, S., Jones, E.C., Wong, H.-S.P., Hanesch, W.

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 417 KB

english, 2003