Volume 29; Issue 3

IEEE Electron Device Letters

Volume 29; Issue 3

1

Crosstalk Characterization in Geiger-Mode Avalanche Photodiode Arrays

Sciacca, E., Condorelli, G., Aurite, S., Lombardo, S., Mazzillo, M., Sanfilippo, D., Fallica, G., Rimini, E.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 331 KB

english, 2008

2

Low Subthreshold Swing HfLaO/Pentacene Organic Thin-Film Transistors

Chang, M.F., Lee, P.T., McAlister, S.P., Chin, A.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 122 KB

english, 2008

3

Vertical Enhancement-Mode InAs Nanowire Field-Effect Transistor With 50-nm Wrap Gate

Thelander, C., FrobergFroberg, L.E., Rehnstedt, C., Samuelson, L., Wernersson, L.-E.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 333 KB

english, 2008

4

Thin Amorphous $\hbox{Si/Si}_{3}\hbox{N}_{4}$-Based Light-Emitting Device Prepared With Low Thermal Budget

Tan, W.K., Yu, M.B., Chen, Q., Loh, W.Y., Ye, J.D., Zhang, X.H., Lo, G.Q., Kwong, D.-L.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 319 KB

english, 2008

5

Accurate Estimation of Low $( ≪ \hbox{10}^{-8}\ \Omega \cdot \hbox{cm}^{2})$ Values of Specific Contact Resistivity

Bhaskaran, M., Sriram, S., Holland, A.S.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 275 KB

english, 2008

6

1.4-$\mu\hbox{m}$-Pitch 50% Fill-Factor 1T Charge-Modulation Pixel for CMOS Image Sensors

A. Tournier, F. Roy, G. Lu, B. Deschamps

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 472 KB

english, 2008

7

Effects of $\hbox{N}_{2}$ Plasma Pretreatment on the SiN Passivation of AlGaN/GaN HEMT

M. Romero, A. Jimenez, J. Miguel-sanchez, A. Brana, F. Gonzalez-posada, R. Cuerdo, F. Calle, E. Munoz

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 133 KB

english, 2008

8

Ti/Ni(80%)Cr(20%) Thin-Film Resistor With a Nearly Zero Temperature Coefficient of Resistance for Integration in a Standard CMOS Process

D. Nachrodt, U. Paschen, A. Ten Have, H. Vogt

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 288 KB

english, 2008

9

Inverted Staggered Poly-Si Thin-Film Transistor With Planarized SOG Gate Insulator

J. H. Cheon, J. H. Bae, J. Jang

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 313 KB

english, 2008

10

$muhbox{m}$ CMOS Technology]]>

Hsu Cheng-Ying,, Chen Chu-Yu,, Chuang Huey-Ru,

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 351 KB

english, 2008

11

Novel Offset-Gated Bottom Gate Poly-Si TFTs With a Combination Structure of Ultrathin Channel and Raised Source/Drain

Il-Suk Kang,, Shin-Hee Han,, Seung-Ki Joo,

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 217 KB

english, 2008

12

The Effect of Charge Imbalance on Superjunction Power Devices: An Exact Analytical Solution

Napoli, Ettore, Wang, Han, Udrea, Florin

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 120 KB

english, 2008

13

Room Temperature Near-Infrared Photoresponse Based on Interband Transitions in $\hbox{In}_{0.35}\hbox{Ga}_{0.65}\hbox{As}$ Multiple Quantum Dot Photodetector

Passmore, B.S., Jiang Wu,, Manasreh, M.O., Kunets, V.P., Lytvyn, P.M., Salamo, G.J.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 528 KB

english, 2008

14

On the Formation of Positive Charges in Ultrathin Silicon-Oxynitride p-MOSFETs Subjected to Negative Bias Temperature Stress

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 253 KB

english, 2008

15

Characteristics and Fluctuation of Negative Bias Temperature Instability in Si Nanowire Field-Effect Transistors

Runsheng Wang,, Ru Huang,, Yandong He,, Zhenhua Wang,, Gaosheng Jia,, Dong-Won Kim,, Donggun Park,, Yangyuan Wang,

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 253 KB

english, 2008

16

RF Capacitance Extraction Utilizing a Series Resistance Deembedding Scheme for Ultraleaky MOS Devices

Gil-Bok Choi,, Seung-Ho Hong,, Sung-Woo Jung,, Hee-Sung Kang,, Yoon-Ha Jeong,

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 292 KB

english, 2008

17

Operational Voltage Reduction of Flash Memory Using High-$\kappa$ Composite Tunnel Barriers

Verma, Sarves, Pop, Eric, Kapur, Pawan, Parat, Krishna, Saraswat, Krishna C.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 182 KB

english, 2008

18

An Experimental Study on High-Frequency Substrate Noise Isolation in BiCMOS Technology

Yeh, Ping-Chun, Chiou, Hwann-Kaeo, Lee, Chwan-Ying, Yeh, John, Tang, Denny, Chern, John

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 572 KB

english, 2008