Volume 33; Issue 6

IEEE Transactions on Electron Devices

Volume 33; Issue 6

1

[Front cover and table of contents]

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 197 KB

english, 1986

2

Gain control operation of a four-terminal p-n-p In0.53Ga0.47As/InP junction field-effect transistor grown by molecular-beam epitaxy

Cheng, J., Forrest, S.R., Guth, G., Wunder, R.

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 484 KB

english, 1986

3

Light-beam-induced current analysis for preferentially doped polysilicon solar cells

Ragaie, H.F., El-Ghitani, H.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 447 KB

english, 1986

4

SIT Image sensor: Design considerations and characteristics

Yusa, A., Nishizawa, J., Imai, M., Yamada, H., Nakamura, J., Mizoguchi, T., Ohta, Y., Takayama, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 941 KB

english, 1986

5

A self-consistent pseudo-two-dimensional model for hot-electron current in MOST' s

Tanaka, S., Saito, S., Atsumi, S., Yoshikawa, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 923 KB

english, 1986

6

A new self-align technology for GaAs analog MMIC's

Hagio, M., Katsu, S., Kazumura, M., Kano, G.

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 678 KB

english, 1986

7

Modeling MOS capacitors to extract Si—SiO2interface trap densities in the presence of arbitrary doping profiles

Bennett, H.S., Gaitan, M., Roitman, P., Russell, T.J., Suehle, J.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 895 KB

english, 1986

8

Process-dependent properties of three-dimensional capacitors

Koburger, C., White, F.R., Nesbit, L., Emmanuel, S.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 1.21 MB

english, 1986

9

A low-barrier Schottky process using MoSi2

Kapoor, A.K., Thomas, M.E., Vora, M.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 925 KB

english, 1986

10

Interface effects of SIPOS passivation

Tong, D.W., Benjamin, J.L., Van Dell, W.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 967 KB

english, 1986

11

Electron velocity in short samples of Ga0.47In0.53As at 300 K

Nag, B.R., Ahmed, S.R., Roy, M.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 393 KB

english, 1986

12

Trapping-enhanced temperature variation of the threshold voltage of GaAs MESFET's

Chung-Hsu Chen, Shur, M., Peczalski, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 596 KB

english, 1986

13

Responsivity of ion-implanted p-n junction in a GaAs electroabsorption avalanche detector

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 456 KB

english, 1986

14

Effect of nonuniform illumination on the photovoltaic decay characteristic of solar cells

Gopal, R., Dwivedi, R., Srivastava, S.K.

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 823 KB

english, 1986

15

Experimental study on current gain of BSIT

Nakamura, Y., Tadano, H., Takigawa, M., Igarashi, I., Nishizawa, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 753 KB

english, 1986

16

Effect of doping profile variations on the performance of the permeable base transistor

Gopinath, A., Rankin, J.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 598 KB

english, 1986

17

Alpha-particle-induced charge transfer between closely spaced memory cells

Jue-Shien Chern, Ping Yang, Pattnaik, P., Seitchik, J.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 1.36 MB

english, 1986

18

Analysis and modeling of floating-gate EEPROM cells

Kolodny, A., Nieh, S.T.K., Eitan, B., Shappir, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 1023 KB

english, 1986

19

Monolithic matrix-addressable AlGaAs—GaAs array

Ray, S., Kolbas, R.M., Hafich, M.J., Dies, B.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 593 KB

english, 1986

20

High-resolution 8-mm CCD image sensor with correlated clamp sample and hold charge detection circuit

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 1.77 MB

english, 1986

21

High-mobility FET in strained silicon

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 131 KB

english, 1986

22

A steady-state temperature model for silicon recrystallization using light sources

Chong Min Kyung, Yang, Y.Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 247 KB

english, 1986

23

A generalized proof of the reciprocity theorem

Kwark, Y.H., Swanson, R.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 259 KB

english, 1986

24

The recovery of electron field-effect mobility on ion-beam-nitridized transistors with sacrificial oxide treatment

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 317 KB

english, 1986

25

A role of source n-region in LDD MOSFET's

Takeda, E., Shimizu, A., Kume, H., Itoh, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 200 KB

english, 1986

26

Correction

Carter, D.L., Lippens, D., Nieruchalski, J.-L.

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 116 KB

english, 1986

27

Comments on "An analysis of the thermal response of power chip packages"

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 116 KB

english, 1986

28

[Back cover]

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 502 KB

english, 1986

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