Volume 40; Issue 12

IEEE Transactions on Electron Devices

Volume 40; Issue 12

1

Non-quasi-static transient and small-signal two-dimensional modeling of GaAs MESFET's with emphasis on distributed effects

Akhtar, S., Tiwari, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 1.04 MB

english, 1993

2

Optimized double heterojunction pseudomorphic InP/InxGa 1-xAs/InP (0.64&les;x&les;0.82)p-MODFETs and the role of strain in their design

Kusters, A.M., Kohl, A., Sommer, V., Muller, R., Heime, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 759 KB

english, 1993

3

Thermal properties of power HBT's

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 667 KB

english, 1993

4

Reliability of AlInAs/GaInAs heterojunction bipolar transistors

Hafizi, M., Stanchina, W.E., Metzger, R.A., Jensen, J.F., Williams, F.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 937 KB

english, 1993

5

Light-induced sidegating effect in GaAs MESFET's

Shwu-Jing Chang, Chien-Ping Lee

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 470 KB

english, 1993

6

Optically triggered In0.53Ga0.47As-transferred-electron devices for repeater applications

Hahn, D., Hansen, K., Malacky, L., Schlachetzhi, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 577 KB

english, 1993

7

Repair technique for phase-shifting masks using silicon-containing resist

Watanabe, H., Sugiura, E., Imoriya, T., Todokoro, Y., Inoue, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 665 KB

english, 1993

8

Analysis of the transistor-related noise in integrated p-i-n-HBT optical receiver front-ends

Liu, Q.Z., Pulfrey, D.L., Jackson, M.K.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 692 KB

english, 1993

9

Integrated self-scanning light-emitting device (SLED)

Ohno, S., Kusuda, Y., Komaba, N., Kuroda, Y., Yamashita, K., Tanaka, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 850 KB

english, 1993

10

Simulation and fabrication of submicron channel length DMOS transistors for analog applications

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 961 KB

english, 1993

11

The degradation of TDDB characteristics of Si02/Si3 N4/Si02 stacked films caused by surface roughness of Si3N4 films [DRAMs]

Tanaka, H., Uchida, H., Ajioka, T., Hirashita, N.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 728 KB

english, 1993

12

An analytical back gate bias dependent threshold voltage model for SiGe-channel ultrathin SOI PMOS devices

Kuo, J.B., Mao-Chuan Tang, Jai-Hoon Sim

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 640 KB

english, 1993

13

A bidirectional NMOSFET current reduction model for simulation of hot-carrier-induced circuit degradation

Quader, K.N., Li, C.C., Tu, R., Rosenbaum, E., Ko, P.K., Chenming Hu

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 937 KB

english, 1993

14

HIM0S-a high efficiency flash E2PROM cell for embedded memory applications

Van Houdt, J., Haspeslagh, L., Wellekens, D., Deferm, L., Groeseneken, G., Maes, H.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 959 KB

english, 1993

15

P-MOSFET's with ultra-shallow solid-phase-diffused drain structure produced by diffusion from BSG gate-sidewall

Saito, M., Yoshitomi, T., Hara, H., Ono, M., Akasaka, Y., Nii, H., Matsuda, S., Momose, H.S., Katsumata, Y., Ushiku, Y., Iwai, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 1.04 MB

english, 1993

16

Anomalous behavior of surface leakage currents in heavily doped gated-diodes

Hurkx, F., Peek, H.L., Slotboom, J.W., Windgassen, R.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 810 KB

english, 1993

17

A method of eliminating B-mode dielectric breakdown failure in gate oxides utilizing a charging phenomenon

Ajioka, T., Nara, A., Tominaga, Y., Ushikoshi, T., Kitabayashi, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 513 KB

english, 1993

18

Silicon dioxide breakdown lifetime enhancement under bipolar bias conditions

Rosenbaum, E., Liu, Z., Hu, C.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 968 KB

english, 1993

19

Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJT's by means of a nonlocal analytical model for the avalanche multiplication factor

Verzellesi, G., Baccarani, G., Canali, C., Pavan, P., Vendrame, L., Zanoni, E.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 474 KB

english, 1993

20

The effects of H2-O2-plasma treatment on the characteristics of polysilicon thin-film transistors

Horng Nan Chern, Chung Len Lee, Tan Fu Lei

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 612 KB

english, 1993

21

Modeling of minority-carrier transport in nonuniformly doped silicon regions with asymptotic expansions

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 1.00 MB

english, 1993

22

The inversion layer of subhalf-micrometer n- and p-channel MOSFET's in the temperature range 208-403 K

Wildau, H.-J., Bernt, H., Friedrich, D., Seifert, W., Staudt-Fischbach, P., Wagemann, H.G., Windbracke, W.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 845 KB

english, 1993

23

Scaling theory for double-gate SOI MOSFET's

Suzuki, K., Tanaka, T., Tosaka, Y., Horie, H., Arimoto, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 343 KB

english, 1993

24

Measurements and modeling of MOSFET I-V characteristics with polysilicon depletion effect

Cheng-Linag Huang, Arora, N.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 788 KB

english, 1993

25

Electrical and optical bandgaps of Gex Si1-x strained layers

Jain, S.C., Poortmans, J., Iyer, S.S., Loferski, J.J., Nijs, J., Mertens, R., Van Overstraeten, R.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 602 KB

english, 1993

26

Numerical analysis of electric field profiles in high-voltage GaAs photoconductive switches and comparison to experiment

Kingsley, L.E., Donaldson, W.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 809 KB

english, 1993

27

A time-dependent two-dimensional analysis of the turn-off process in a gate turn-off thyristor (GTO)

Vobecky, J., Bleichner, H., Rosling, M., Nordlander, E.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 785 KB

english, 1993

28

A self-aligned lateral bipolar transistor realized on SIMOX-material

Edholm, B., Olsson, J., Soderbarg, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 230 KB

english, 1993

29

A pseudomorphic GaInP/InP MESFET with improved device performance

Lin, K.C., Hsin, T.M., Chang, C.Y., Chang, E.Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 222 KB

english, 1993

30

Characteristics of In0.52Al0.48As/In0.53 Ga0.47As/InP HEMT's with n-and p-channel doping

Tian, H., Kim, K.W., Littlejohn, M.A., Mishra, U.K.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 488 KB

english, 1993

31

Origin of the difference between the capacitance intercept voltage and the built-in potential

van Mieghem, P.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 344 KB

english, 1993

32

Comments on "Determination of space-dependent electron distribution function by combined use of energy and Boltzmann transport equations: improvement, evaluation, and explanation

Fiegna, C., Sangiorgi, E.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 194 KB

english, 1993

33

Delta-doping interband tunneling diode by metal-organic chemical vapor deposition

Yan-Kuin Su, Ruey-Lue Wang, Hann-Huei Tsai

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 742 KB

english, 1993

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