Volume 46; Issue 3

IEEE Transactions on Electron Devices

Volume 46; Issue 3

1

Temperature stable Pd ohmic contacts to p-type 4H-SiC formed at low temperatures

Kassamakova, L., Kakanakov, R.D., Kassamakov, I.V., Nordell, N., Savage, S., Hjorvarsson, B., Svedberg, E.B., Aborn, L., Madsen, L.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 900 KB

english, 1999

2

Electrical properties and interface chemistry in the Ti/3C-SiC system

Touati, F., Takemasa, K., Saji, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 124 KB

english, 1999

3

Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers

Defives, D., Noblanc, O., Dua, C., Brylinski, C., Barthula, M., Aubry-Fortuna, V., Meyer, F.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 217 KB

english, 1999

4

High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination

Saxena, V., Jian Nong Su, Steckl, A.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 353 KB

english, 1999

5

6H-SiC p+-n junctions fabricated by beryllium implantation

Ramungul, N., Khemka, V., Zheng, Y., Patel, R., Chow, T.P.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 179 KB

english, 1999

6

Performance limiting surface defects in SiC epitaxial p-n junction diodes

Kimoto, T., Miyamoto, N., Matsunami, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 221 KB

english, 1999

7

Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (

Neudeck, P.G., Wei Huang, Dudley, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 319 KB

english, 1999

8

Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (

Neudeck, P.G., Fazi, C.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 230 KB

english, 1999

9

Current-controlled negative resistance (CCNR) in SiC P-i-N rectifiers

Ramungul, N., Chow, T.P.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 98 KB

english, 1999

10

Charge-sheet model for silicon carbide inversion layers

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 292 KB

english, 1999

11

Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO2/SiC MOS system and MOSFET's

Yano, H., Katafuchi, F., Kimoto, T., Matsunami, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 160 KB

english, 1999

12

Study of interface state density and effective oxide charge in post-metallization annealed SiO2-SiC structures

Campi, J., Yan Shi, Yanbin Luo, Feng Yan, Zhao, J.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 250 KB

english, 1999

13

Time-dependent-dielectric-breakdown measurements of thermal oxides on n-type 6H-SiC

Mathur, M.M., Cooper, J.A., Jr.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 150 KB

english, 1999

14

Insulator investigation on SiC for improved reliability

Lipkin, L.A., Palmour, J.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 172 KB

english, 1999

15

Detailed investigation of n-channel enhancement 6H-SiC MOSFETs

Schorner, R., Friedrichs, P., Peters, D.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 255 KB

english, 1999

16

An 1800 V triple implanted vertical 6H-SiC MOSFET

Peters, D., Schorner, R., Friedrichs, P., Volkl, J., Mitlehner, H., Stephani, D.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 151 KB

english, 1999

17

Recent progress of submicron CMOS using 6H-SiC for smart power applications

Man Pio Lam, Kornegay, K.T.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 224 KB

english, 1999

18

Influence of microstructural variation on the electrical properties of SiC microthermistors

Terashige, T., Okano, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 152 KB

english, 1999

19

Current status of silicon carbide based high-temperature gas sensors

Lloyd, A., Tobias, P., Baranzahi, A., Martensson, P., Lundstrom, I.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 142 KB

english, 1999

20

Demonstration of an SiC neutron detector for high-radiation environments

Seshadri, S., Dulloo, A.R., Ruddy, F.H., Seidel, J.G., Rowland, L.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 117 KB

english, 1999

21

Photoluminescence from Er-implanted polycrystalline 3C SiC

Uekusa, S.-i., Awahara, K., Kumagai, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 169 KB

english, 1999

22

SiC-based phototransistor with a tunnel MOS emitter

Grekhov, I.V., Ivanov, P.A., Samsonova, T.P., Shulekin, A.F., Vexler, M.I.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 110 KB

english, 1999

23

A CAD-oriented nonlinear model of SiC MESFET based on pulsed I(V), pulsed S-parameter measurements

Siriex, D., Noblanc, O., Barataud, D., Chartier, E., Brylinski, C., Quere, R.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 163 KB

english, 1999

24

Microwave characteristics of BARITT diodes based on silicon carbide

Aroutiounian, V.M., Buniatyan, V.V., Soukiassian, P.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 126 KB

english, 1999

25

Evaluation of high-voltage 4H-SiC switching devices

Jue Wang, Williams, B.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 203 KB

english, 1999

26

Dynamics of incomplete ionized dopants and their impact on 4H/6H-SiC devices

Lades, M., Kaindl, W., Kaminski, N., Niemann, E., Wachutka, G.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 210 KB

english, 1999

27

A comparative study of C plus Al coimplantation and Al implantation in 4Hand 6H-SiC

Tone, K., Zhao, J.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 244 KB

english, 1999

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