IEEE Transactions on Electron Devices

1

Analysis and optimization of SDOI structure to maximize the intrinsic performance of extremely scaled MOSFETs

Zhikuan Zhang, Shengdong Zhang, Chuguang Feng, Mansun Chan

Journal:

Year:

2004

Language:

english

File:

PDF, 343 KB

english, 2004

2

Contribution of dislocations to the zero-bias resistance-area product of LWIR HgCdTe photodiodes at low temperatures

Gopal, V., Gupta, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 241 KB

english, 2004

3

Performance enhancement by the In0.65Ga0.35As pseudomorphic channel on the In0.5Al0.5As metamorphic buffer Layer

Cheng-Kuo Lin, Jing-Chang Wu, Wen-Kai Wang, Yi-Jen Chan, Jenq-Shinn Wu, Yung-Chung Pan, Chung-Chih Tsai, Jiun-Tsuen Lai

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 265 KB

english, 2004

4

Analytic model of I-V Characteristics of 4H-SiC MESFETs based on multiparameter mobility model

Hongliang Lv, Yimen Zhang, Yuming Zhang, Lin-An Yang

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 232 KB

english, 2004

5

Polysilicon TFT structures for kink-effect suppression

Mariucci, L., Fortunato, G., Bonfiglietti, A., Cuscuna, M., Pecora, A., Valletta, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 380 KB

english, 2004

6

Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide charge storage Layer

Yan-Ny Tan, Chim, W.-K., Byung Jin Cho, Wee-Kiong Choi

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 227 KB

english, 2004

7

Use of WNX as the diffusion barrier for interconnect copper metallization of InGaP-GaAs HBTs

Shang-Wen Chang, Chang, E.Y., Cheng-Shih Lee, Ke-Shian Chen, Chao-Wei Tseng, Tung-Ling Hsieh

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 371 KB

english, 2004

8

Experimental investigation of the temperature dependence of InAs-AlSb-GaSb Resonant Interband tunnel diodes

Yanyang Xu, Fay, P., Chow, D.H., Schulman, J.N.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 215 KB

english, 2004

9

Thin-film strained-SOI CMOS Devices-physical mechanisms for reduction of carrier mobility

Mizuno, T., Sugiyama, N., Tezuka, T., Numata, T., Maeda, T., Takagi, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 443 KB

english, 2004

10

Sea of polymer pillars electrical and optical chip I/O interconnections for gigascale integration

Bakir, M.S., Meindl, J.D.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 553 KB

english, 2004

11

A new trench bipolar transistor for RF applications

Hueting, R.J.E., Slotboom, J.W., Melai, J., Agarwal, P., Magnee, P.H.C.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 360 KB

english, 2004

12

Feature-scale Process Simulation and accurate capacitance extraction for the backend of a 100-nm aluminum/TEOS Process

Heitzinger, C., Sheikholeslami, A., Badrieh, F., Puchner, H., Selberherr, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 478 KB

english, 2004

13

A device design methodology for sub-100-nm SOC applications using bulk and SOI MOSFETs

Suryagandh, S.S., Garg, M., Woo, J.C.S.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 612 KB

english, 2004

14

SJ/RESURF LDMOST

Nassif-Khalil, S.G., Li Zhang Hou, Salama, C.A.T.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 369 KB

english, 2004

15

A low-cost fully self-aligned SiGe BiCMOS technology using selective epitaxy and a lateral quasi-single-poly integration concept

Tilke, A.T., Rochel, M., Berkner, J., Rothenhausser, S., Stahrenberg, K., Wiedemann, J., Wagner, C., Dahl, C.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 760 KB

english, 2004

16

Simulation and properties of transitions to traveling-wave deflection systems

Staras, S., Burokas, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 193 KB

english, 2004

17

Gate oxide reliability under ESD-like pulse stress

Jie Wu, Rosenbaum, E.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 216 KB

english, 2004

18

Highly effective junction isolation structures for PICs based on standard CMOS Process

Starke, T.K.H., Holland, P.M., Hussain, S., Jamal, W.M., Mawby, P.A., Igic, P.M.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 544 KB

english, 2004

19

Top-emitting OLED using praseodymium oxide coated platinum as hole injectors

Chengfeng Qiu, Huajun Peng, Haiying Chen, Zhiliang Xie, Man Wong, Hoi Sing Kwok

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 167 KB

english, 2004

20

Fast and reliable tunnel programming of nanocrystal nonvolatile memories

Puzzilli, G., Caputo, D., Irrera, F.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 116 KB

english, 2004

21

An efficient analytical approach for extracting the emitter inductance of collector-up HBTs

Hsien-Cheng Tseng, Jung-Hua Chou

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 151 KB

english, 2004

22

Properties of Al-SrTiO3-ITO capacitors for microelectronic device applications

Konofaos, N., Evangelou, E.K., Wang, Z., Helmersson, U.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 160 KB

english, 2004

23

Physics-based mathematical conditioning of the MOSFET surface potential equation

Weimin Wu, Ten-Lon Chen, Gildenblat, G., McAndrew, C.C.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 218 KB

english, 2004

24

On the ballistic transport in nanometer-scaled DG MOSFETs

Martin, J.S., Bournel, A., Dollfus, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 338 KB

english, 2004

25

Obtaining isothermal data for HBT

Fregonese, S., Zimmer, T., Mnif, H., Baureis, P., Maneux, C.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 246 KB

english, 2004

26

Characterization of the switching parameters in the dual-channel double Heterostructure Optoelectronic switch

Opper, H., Cai, J., Garber, R.B., Basilica, R., Taylor, G.W.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 163 KB

english, 2004

27

Integration of optical polymer pillars chip I/O interconnections with Si MSM photodetectors

Bakir, M.S., Chi On Chui, Okyay, A.K., Saraswat, K.C., Meindl, J.D.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 542 KB

english, 2004

28

Threshold Voltage model for mesa-isolated small geometry fully depleted SOI MOSFETs based on analytical solution of 3-D Poisson's equation

Katti, G., DasGupta, N., DasGupta, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 324 KB

english, 2004

29

The role of the Mercury-Si Schottky-barrier height in Ψ-MOSFETs

Choi, J.Y., Ahmed, S., Dimitrova, T., Chen, J.T.C., Schroder, D.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 264 KB

english, 2004

30

Optimization of alloy composition for high-performance strained-Si-SiGeN-channel MOSFETs

Olsen, S.H., O'Neill, A.G., Driscoll, L.S., Chattopadhyay, S., Kwa, K.S.K., Waite, A.M., Tang, Y.T., Evans, A.G.R., Jing Zhang

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 383 KB

english, 2004

31