IEEE Transactions on Electron Devices

1

Numerical Analysis of Terahertz Emissions From an Ungated HEMT Using Full-Wave Hydrodynamic Model

Bhardwaj, Shubhendu, Nahar, Niru K., Rajan, Siddharth, Volakis, John L.

Journal:

Year:

2016

Language:

english

File:

PDF, 2.75 MB

english, 2016

2

Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs

Seoane, Natalia, Indalecio, Guillermo, Aldegunde, Manuel, Nagy, Daniel, Elmessary, Muhammad A., Garcia-Loureiro, Antonio J., Kalna, Karol

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 3.83 MB

english, 2016

3

A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions. Part II—Small-Signal and Conversion Matrix Sensitivity

Donati Guerrieri, Simona, Bonani, Fabrizio, Bertazzi, Francesco, Ghione, Giovanni

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 2.09 MB

english, 2016

4

Low Reverse Recovery Charge 30 V Power MOSFET With Double Epi Structure for DC–DC Converters

Hirao, Takashi, Hashimoto, Takayuki

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 1.75 MB

english, 2016

5

Numerical Simulation of Temperature–Voltage Relation in Electrical Contacts and Correction of Classical Kohlrausch’s Equation

Ren, Wanbin, Wei, Jianmin, Meng, Xiangxing, Zhi, Hongxu

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 2.26 MB

english, 2016

6

Analysis of Signal Propagation Through TSVs Within Distilled Water for Liquid-Cooled Microsystems

Oh, Hanju, May, Gary S., Bakir, Muhannad S.

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 2.20 MB

english, 2016

7

Electrical Characterization of FDSOI by Capacitance Measurements in Gated p-i-n Diodes

Navarro, Carlos, Bawedin, Maryline, Andrieu, Francois, Cluzel, Jacques, Cristoloveanu, Sorin

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 2.44 MB

english, 2016

8

GaN-Based UV Light-Emitting Diodes With a Green Indicator Through Selective-Area Photon Recycling

Chen, Fu-Bang, Sheu, Jinn-Kong, Yen, Wei-Yu, Wang, Yen-Chin, Huang, Shih-Hsien, Liu, Chun-Nan, Yeh, Yu-Hsiang, Chang, Chih-Chiang, Lee, Ming-Lun

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 1.39 MB

english, 2016

9

Surface Passivation in Empirical Tight Binding

He, Yu, Tan, Yaohua, Jiang, Zhengping, Povolotskyi, Michael, Klimeck, Gerhard, Kubis, Tillmann

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 1.44 MB

english, 2016

10

Z-Interference and Z-Disturbance in Vertical Gate-Type 3-D NAND

Yeh, Teng-Hao Elton, Chen, Wei-Chen, Hsu, Tzu-Hsuan Bruce, Du, Pei-Ying Penny, Hsieh, Chih-Chang, Lue, Hang-Ting, Shih, Yen-Hao, King, Ya-Chin, Lu, Chih-Yuan

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 3.14 MB

english, 2016

11

Thermal Analysis of Sheet Beam Gun for the Sheet Beam Traveling Wave Tube

Jiang, Wei, Wang, Jianxun, Luo, Yong, Xu, Lin, Yao, Xu, Wang, Shafei

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 1.43 MB

english, 2016

12

Electron Back Scattering in CNTFETs

Bejenari, Igor, Claus, Martin

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 838 KB

english, 2016

13

Full-Chip Power Supply Noise Time-Domain Numerical Modeling and Analysis for Single and Stacked ICs

Zheng, Li, Zhang, Yang, Bakir, Muhannad S.

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 2.16 MB

english, 2016

14

Performance Improvement of Pd/ZnO-NR/Si MIS Gas Sensor Device in Capacitive Mode: Correlation With Equivalent-Circuit Elements

Dutta, Koushik, Banerjee, Nabaneeta, Mishra, Himakshi, Bhattacharyya, Partha

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 2.69 MB

english, 2016

16

An Analytical Model to Estimate FinFET's V T Distribution Due to Fin-Edge Roughness

Mittal, S., Shekhawat, A. S., Ganguly, U.

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 1.45 MB

english, 2016

17