32

The annealing effects of Mg-doped GaN epilayers capped with SiO2 layers

Year:
2000
Language:
english
File:
PDF, 223 KB
english, 2000
33

Electronic characteristics of Au/AlxGa1−xN structures grown with various x values

Year:
2000
Language:
english
File:
PDF, 214 KB
english, 2000
38

N-type doping behavior of A10.15Ga0.85N:Si with various Si incorporations

Year:
2002
Language:
english
File:
PDF, 350 KB
english, 2002
41

Strain relaxation in InxGa1−xN epitaxial films grown coherently on GaN

Year:
2003
Language:
english
File:
PDF, 327 KB
english, 2003
42

Influence of SiN buffer layer in GaN epilayers

Year:
2003
Language:
english
File:
PDF, 352 KB
english, 2003
50

Doping behavior of In0.1Ga0.9N codoped with Si and Zn

Year:
1999
Language:
english
File:
PDF, 124 KB
english, 1999