D. Ielmini: search on Z-Library

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51

Modeling of stress-induced leakage current and impact ionization in MOS devices

Daniele Ielmini, Alessandro Sottocornola Spinelli, Andrea Leonardo Lacaita, Gabriella Ghidini

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 158 KB

english, 2002

52

A recombination- and trap-assisted tunneling model for stress-induced leakage current

Daniele Ielmini, Alessandro S. Spinelli, Andrea L. Lacaita, Andrea Martinelli, Gabriella Ghidini

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 217 KB

english, 2001

53

Modeling of anomalous SILC in flash memories based on tunneling at multiple defects

Daniele Ielmini, Alessandro S Spinelli, Andrea L Lacaita, Alberto Modelli

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 370 KB

english, 2002

54

Separation of electron and hole traps by transient current analysis

A.S. Spinelli, A.L. Lacaita, M. Rigamonti, D. Ielmini, G. Ghidini

Journal:

Microelectronic Engineering

Year:

1999

Language:

english

File:

PDF, 304 KB

english, 1999

55

Resistive-Switching Crossbar Memory Based on Ni–NiO Core–Shell Nanowires

Carlo Cagli, Federico Nardi, Bruce Harteneck, Zhongkui Tan, Yuegang Zhang, Daniele Ielmini

Journal:

Year:

2011

Language:

english

File:

PDF, 1.35 MB

english, 2011

56

Nanowire Switches: Resistive-Switching Crossbar Memory Based on Ni–NiO Core–Shell Nanowires (Small 20/2011)

Carlo Cagli, Federico Nardi, Bruce Harteneck, Zhongkui Tan, Yuegang Zhang, Daniele Ielmini

Journal:

Year:

2011

File:

PDF, 2.93 MB

2011

57

Mutation K448E in the external loop 5 of rat GABA transporter rGAT1 induces pH sensitivity and alters substrate interactions

Greta Forlani, Elena Bossi, Roberta Ghirardelli, Stefano Giovannardi, Francesca Binda, Lorena Bonadiman, Lorena Ielmini, Antonio Peres

Journal:

The Journal of Physiology

Year:

2001

Language:

english

File:

PDF, 699 KB

english, 2001

58

Highly Efficient Palladium-Catalyzed Boronic Acid Coupling Reactions in Water: Scope and Limitations

Badone, D., Baroni, M., Cardamone, R., Ielmini, A., Guzzi, U.

Journal:

Journal of Organic Chemistry

Year:

1997

Language:

english

File:

PDF, 149 KB

english, 1997

59

Switching and programming dynamics in phase-change memory cells

D. Ielmini, D. Mantegazza, A.L. Lacaita, A. Pirovano, F. Pellizzer

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 742 KB

english, 2005

60

Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories

Ielmini, D, Nardi, F, Cagli, C

Journal:

Year:

2011

Language:

english

File:

PDF, 815 KB

english, 2011

61

Unified physical modeling of reliability mechanisms and scaling perspective of phase change memory

Daniele Ielmini

Journal:

Current Applied Physics

Year:

2011

Language:

english

File:

PDF, 589 KB

english, 2011

62

Phase change materials in non-volatile storage

Daniele Ielmini, Andrea L. Lacaita

Journal:

Materials Today

Year:

2011

Language:

english

File:

PDF, 2.21 MB

english, 2011

63

Modeling of SILC based on electron and hole tunneling. II. Steady-state

Ielmini, D., Spinelli, A.S., Rigamonti, M.A., Lacaita, A.L.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 164 KB

english, 2000

64

Modeling of SILC based on electron and hole tunneling. I. Transient effects

Ielmini, D., Spinelli, A.S., Rigamonti, M.A., Lacaita, A.L.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 176 KB

english, 2000

65

A detailed investigation of the quantum yield experiment

Ielmini, D., Spinelli, A.S., Lacaita, A.L., DiMaria, D.J., Ghidini, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 128 KB

english, 2001

66

Statistical profiling of SILC spot in flash memories

Ielmini, D., Spinelli, A.S., Lacaita, A.L., Visconti, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 245 KB

english, 2002

67

A statistical model for SILC in flash memories

Ielmini, D., Spinelli, A.S., Lacaita, A.L., Modelli, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 484 KB

english, 2002

68

Impact of correlated generation of oxide defects on SILC and breakdown distributions

Ielmini, D., Spinelli, A.S., Lacaita, A.L., van Duuren, M.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 479 KB

english, 2004

69

Defect generation statistics in thin gate oxides

Ielmini, D., Spinelli, A.S., Lacaita, A.L., van Duuren, M.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 429 KB

english, 2004

70

Modeling of tunneling P/E for nanocrystal memories

Compagnoni, C.M., Ielmini, D., Spinelli, A.S., Lacaita, A.L.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 429 KB

english, 2005

71

Optimization of threshold voltage window under tunneling program/erase in nanocrystal memories

Compagnoni, C.M., Ielmini, D., Spinelli, A.S., Lacaita, A.L.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 445 KB

english, 2005

72

Characterization of oxide trap energy by analysis of the SILC roll-off regime in flash memories

Ielmini, D., Spinelli, A.S., Visconti, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 454 KB

english, 2006

73

A study of hot-hole injection during programming drain disturb in flash memories

Ielmini, D., Ghetti, A., Spinelli, A.S., Visconti, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 268 KB

english, 2006

74

Intrinsic Data Retention in Nanoscaled Phase-Change Memories—Part II: Statistical Analysis and Prediction of Failure Time

Andrea Redaelli, Daniele Ielmini, Ugo Russo, Andrea L. Lacaita

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 257 KB

english, 2006

75

Intrinsic Data Retention in Nanoscaled Phase-Change Memories—Part I: Monte Carlo Model for Crystallization and Percolation

Ugo Russo, Daniele Ielmini, Andrea Redaelli, Andrea L. Lacaita

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 421 KB

english, 2006

76

Recovery and Drift Dynamics of Resistance and Threshold Voltages in Phase-Change Memories

Daniele Ielmini, Andrea L. Lacaita, Davide Mantegazza

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 268 KB

english, 2007

77

Analytical Modeling of Chalcogenide Crystallization for PCM Data-Retention Extrapolation

Russo, U., Ielmini, D., Lacaita, A.L.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 819 KB

english, 2007

78

Modeling of Programming and Read Performance in Phase-Change Memories—Part I: Cell Optimization and Scaling

Russo, U., Ielmini, D., Redaelli, A., Lacaita, A.L.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 804 KB

english, 2008

79

Modeling of Programming and Read Performance in Phase-Change Memories—Part II: Program Disturb and Mixed-Scaling Approach

Russo, U., Ielmini, D., Redaelli, A., Lacaita, A.L.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 733 KB

english, 2008

80

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

Russo, U., Ielmini, D., Cagli, C., Lacaita, A.L.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 640 KB

english, 2009

81

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

Russo, U., Ielmini, D., Cagli, C., Lacaita, A.L.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 637 KB

english, 2009

82

Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part II: Physics-Based Modeling

Lavizzari, S., Ielmini, D., Sharma, D., Lacaita, A.L.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 671 KB

english, 2009

83

Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part I: Experimental Study

Ielmini, D., Sharma, D., Lavizzari, S., Lacaita, A.L.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 675 KB

english, 2009

84

Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory

Russo, U., Kamalanathan, D., Ielmini, D., Lacaita, A.L., Kozicki, M.N.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 840 KB

english, 2009

85

Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices

Cagli, C., Nardi, F., Ielmini, D.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 782 KB

english, 2009

86

A New NBTI Model Based on Hole Trapping and Structural Relaxation in MOS Dielectrics

Ielmini, D., Manigrasso, M., Gattel, F., Valentini, M.G.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 1.02 MB

english, 2009

87

Threshold-Switching Delay Controlled by Current Fluctuations in Phase-Change Memory Devices

Lavizzari, S., Sharma, D., Ielmini, D.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 839 KB

english, 2010

88

A New Transient Model for Recovery and Relaxation Oscillations in Phase-Change Memories

Lavizzari, S., Ielmini, D., Lacaita, A.L.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 644 KB

english, 2010

89

Statistics of Resistance Drift Due to Structural Relaxation in Phase-Change Memory Arrays

Boniardi, M., Ielmini, D., Lavizzari, S., Lacaita, A.L., Redaelli, A., Pirovano, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 731 KB

english, 2010

90

Transient Simulation of Delay and Switching Effects in Phase-Change Memories

Lavizzari, S., Ielmini, D., Lacaita, A.L.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 502 KB

english, 2010

91

Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM

Ielmini, D., Nardi, F., Cagli, C.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 586 KB

english, 2011

92

Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM

Ielmini, D., Nardi, F., Balatti, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 852 KB

english, 2012

93

Switching of nanosized filaments in NiO by conductive atomic force microscopy

Nardi, F., Deleruyelle, D., Spiga, S., Muller, C., Bouteille, B., Ielmini, D.

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 1.26 MB

english, 2012

94

Phase I clinical and pharmacokinetic study of trabectedin and doxorubicin in advanced soft tissue sarcoma and breast cancer

C. Sessa, A. Perotti, C. Noberasco, F. De Braud, E. Gallerani, S. Cresta, M. Zucchetti, L. Viganò, A. Locatelli, J. Jimeno, J.W. Feilchenfeldt, M. D’Incalci, G. Capri, N. Ielmini, L. Gianni

Journal:

European Journal of Cancer

Year:

2009

Language:

english

File:

PDF, 185 KB

english, 2009

95

Evidence for trap-limited transport in the subthreshold conduction regime of chalcogenide glasses

Ielmini, Daniele, Zhang, Yuegang

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 510 KB

english, 2007

96

[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - Random telegraph signal noise in phase change memory devices

Fugazza, Davide, Ielmini, Daniele, Lavizzari, Simone, Lacaita, Andrea L.

Year:

2010

Language:

english

File:

PDF, 421 KB

english, 2010

97

Xanthan chain length is modulated by increasing the availability of the polysaccharide copolymerase protein GumC and the outer membrane polysaccharide export protein GumB

Galvan, E. M., Ielmini, M. V., Patel, Y. N., Bianco, M. I., Franceschini, E. A., Schneider, J. C., Ielpi, L.

Journal:

Year:

2013

Language:

english

File:

PDF, 626 KB

english, 2013

98

Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

Balatti, S., Larentis, S., Gilmer, D. C., Ielmini, D.

Journal:

Advanced Materials

Year:

2013

Language:

english

File:

PDF, 810 KB

english, 2013

99

Impact of Electrode Materials on Resistive-Switching Memory Programming

Russo, U., Cagli, C., Spiga, S., Cianci, E., Ielmini, D.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 306 KB

english, 2009

100

[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM

Russo, U., Ielmini, D., Cagli, C., Lacaita, A. L., Spiga, S., Wiemer, C., Perego, M., Fanciulli, M.

Year:

2007

Language:

english

File:

PDF, 3.82 MB

english, 2007

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