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1

The Anatomy behind Adverse Events in Hand Volumizing Procedures

Frank, Konstantin, Koban, Konstantin, Targosinski, Stefan, Erlbacher, Katharina, Schenck, Thilo L., Casabona, Gabriela, Braz, Andre V., Pavicic, Tatjana, Cotofana, Sebastian

Journal:

Plastic & Reconstructive Surgery

Year:

2018

Language:

english

File:

PDF, 1.18 MB

english, 2018

2

The Functional Anatomy of the Superficial Fat Compartments of the Face

Schenck, Thilo L., Koban, Konstantin C., Schlattau, Alexander, Frank, Konstantin, Sykes, Jonathan M., Targosinski, Stefan, Erlbacher, Katharina, Cotofana, Sebastian

Journal:

Plastic & Reconstructive Surgery

Year:

2018

Language:

english

File:

PDF, 2.43 MB

english, 2018

3

Significant On-Resistance Reduction of LDMOS Devices by Intermitted Trench Gates Integration

Erlbacher, Tobias, Bauer, Anton J., Frey, Lothar

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 1018 KB

english, 2012

4

Reduced On Resistance in LDMOS Devices by Integrating Trench Gates Into Planar Technology

Erlbacher, Tobias, Bauer, Anton J, Frey, Lothar

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 399 KB

english, 2010

5

Optimized Design for 4H-SiC Power DMOSFET

Di Benedetto, Luigi, Licciardo, Gian-Domenico, Erlbacher, Tobias, Bauer, Anton J., Rubino, Alfredo

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 491 KB

english, 2016

6

4.5 kV SiC Junction Barrier Schottky Diodes with Low Leakage Current and High Forward Current Density

Schoeck, Johannes, Buettner, Jonas, Rommel, Mathias, Erlbacher, Tobias, Bauer, Anton J.

Journal:

Materials Science Forum

Year:

2017

Language:

english

File:

PDF, 485 KB

english, 2017

7

The GaN trench gate MOSFET with floating islands: High breakdown voltage and improved BFOM

Shen, Lingyan, Müller, Stephan, Cheng, Xinhong, Zhang, Dongliang, Zheng, Li, Xu, Dawei, Yu, Yuehui, Meissner, Elke, Erlbacher, Tobias

Journal:

Superlattices and Microstructures

Year:

2017

Language:

english

File:

PDF, 1.33 MB

english, 2017

8

Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC

Weiße, J., Hauck, M., Krieger, M., Bauer, A. J., Erlbacher, T.

Journal:

Year:

2019

Language:

english

File:

PDF, 763 KB

english, 2019

9

On the Origin of Charge Compensation in Aluminum-Implanted n-Type 4H-SiC by Analysis of Hall Effect Measurements

Weisse, Julietta, Hauck, Martin, Sledziewski, Tomasz, Krieger, Michael, Bauer, Anton, Mitlehner, Heinz, Frey, Lothar, Erlbacher, Tobias

Journal:

Materials Science Forum

Year:

2019

Language:

english

File:

PDF, 304 KB

english, 2019

10

Publisher’s Note: “Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC” [AIP Advances 9, 055308 (2019)]

Weiße, J., Hauck, M., Krieger, M., Bauer, A. J., Erlbacher, T.

Journal:

Year:

2019

Language:

english

File:

PDF, 534 KB

english, 2019

11

Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology

Rusch, Oleg, Hellinger, Carsten, Moult, Jonathan, Corcoran, Yunji, Erlbacher, Tobias

Journal:

Materials Science Forum

Year:

2020

File:

PDF, 1.04 MB

2020

12

Pre-Deposition Interfacial Oxidation and Post-Deposition Interface Nitridation of LPCVD TEOS Used as Gate Dielectric on 4H-SiC

Lim, Min Who, Sledziewski, Tomasz, Rommel, Mathias, Erlbacher, Tobias, Kim, Hong Ki, Kim, Seong Jun, Shin, Hoon Kyu, Bauer, Anton J.

Journal:

Materials Science Forum

Year:

2020

File:

PDF, 1005 KB

2020

13

[IEEE 2011 IEEE Ninth International Conference on Power Electronics and Drive Systems (PEDS 2011) - Singapore, Singapore (2011.12.5-2011.12.8)] 2011 IEEE Ninth International Conference on Power Electronics and Drive Systems - Monolithic RC-snubber for power electronic applications

vom Dorp, J., Berberich, S.E., Erlbacher, T., Bauer, A.J., Ryssel, H., Frey, L.

Year:

2011

Language:

english

File:

PDF, 1.46 MB

english, 2011

14

Feasibility and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications

T. Erlbacher, A. Huerner, A.J. Bauer, L. Frey

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 507 KB

english, 2012

15

[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - Improving module performance and reliability in power electronic applications by monolithic integration of RC-snubbers

Erlbacher, T., Schwarzmann, H., Bauer, A.J., Berberich, S.E., vom Dorp, J., Frey, L.

Year:

2012

Language:

english

File:

PDF, 958 KB

english, 2012

16

Electronic Structure of Noble-Metal-Noble-Metal Alloys

Beaglehole, David, Erlbach, Erich

Journal:

Physical Review B

Year:

1972

Language:

english

File:

PDF, 1.06 MB

english, 1972

17

Electronic Structure of Noble-Metal-Noble-Metal Alloys,

Beaglehole, David, Erlbach, Erich

Journal:

Physical Review B

Year:

1972

Language:

english

File:

PDF, 68 KB

english, 1972

18

[IEEE 2014 Electronics System-Integration Technology Conference (ESTC) - Helsinki, Finland (2014.9.16-2014.9.18)] Proceedings of the 5th Electronics System-integration Technology Conference (ESTC) - Reliability of monolithic RC-snubbers in MOS-based power modules

Erlbacher, T, Schwarzmann, H, Krach, F, Bauer, A J, Berberich, S E, Kasko, I, Frey, L

Year:

2014

Language:

english

File:

PDF, 1.40 MB

english, 2014

19

Robust Double-Ring Junction Termination Extension Design for High Voltage Power Semiconductor Devices Based on 4H-SiC

Hürner, Andreas, di Benedetto, Luigi, Erlbacher, Tobias, Mitlehner, Heinz, Bauer, Anton J., Frey, Lothar

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 2.63 MB

english, 2015

20

Optimization of 4H-SiC UV Photodiode Performance Using Numerical Process and Device Simulation

Burenkov, Alex, Matthus, Christian, Erlbacher, Tobias

Journal:

IEEE Sensors Journal

Year:

2016

Language:

english

File:

PDF, 3.73 MB

english, 2016

21

Analytical Model and Design of 4H-SiC Planar and Trenched JBS Diodes

Di Benedetto, Luigi, Licciardo, Gian Domenico, Erlbacher, Tobias, Bauer, Anton J., Bellone, Salvatore

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 2.91 MB

english, 2016

22

[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Post-trench processing of silicon deep trench capacitors for power electronic applications

Banzhaf, S., Schwaiger, S., Erlbacher, T., Bauer, A.J., Frey, L., Frey, L.

Year:

2016

Language:

english

File:

PDF, 650 KB

english, 2016

23

[IEEE 2016 74th Annual Device Research Conference (DRC) - Newark, DE, USA (2016.6.19-2016.6.22)] 2016 74th Annual Device Research Conference (DRC) - Silicon integrated RC snubbers for applications up to 900V with reduced mechanical stress and high manufacturability

Krach, F., Thielen, N., Heckel, T., Bauer, A. J., Erlbacher, T., Frey, L.

Year:

2016

Language:

english

File:

PDF, 311 KB

english, 2016

24

Force control basics

Erlbacher, Edwin A.

Journal:

Industrial Robot / An International Journal

Year:

2000

Language:

english

File:

PDF, 370 KB

english, 2000

25

Optimization of 4H-SiC Photodiodes as Selective UV Sensors

Matthus, C.D., Burenkov, A., Erlbacher, Tobias

Journal:

Materials Science Forum

Year:

2017

Language:

english

File:

PDF, 661 KB

english, 2017

26

Silicon nitride, a high potential dielectric for 600 V integrated RC-snubber applications

Krach, Florian, Schwarzmann, Holger, Bauer, Anton J., Erlbacher, Tobias, Frey, Lothar

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2015

Language:

english

File:

PDF, 1.28 MB

english, 2015

27

Novel Advanced Analytical Design Tool for 4H-SiC VDMOSFET Devices

di Benedetto, Luigi, Licciardo, Gian Domenico, Erlbacher, Tobias, Bauer, Anton J., Rubino, Alfredo

Journal:

Materials Science Forum

Year:

2017

Language:

english

File:

PDF, 627 KB

english, 2017

28

Wavelength-selective 4H-SiC UV-sensor array

Matthus, Christian D., Bauer, Anton J., Frey, Lothar, Erlbacher, Tobias

Journal:

Materials Science in Semiconductor Processing

Year:

2019

Language:

english

File:

PDF, 1.01 MB

english, 2019

29

First Experimental Test on Bipolar Mode Field Effect Transistor Prototype in 4H-SiC: A Proof of Concept

di Benedetto, Luigi, Licciardo, Gian Domenico, Huerner, Andreas, Erlbacher, Tobias, Bauer, Anton, Rubino, Alfredo

Journal:

Materials Science Forum

Year:

2019

Language:

english

File:

PDF, 656 KB

english, 2019

30

Design of a 4H-SiC RESURF n-LDMOS Transistor for High Voltage Integrated Circuits

Weisse, Julietta, Mitlehner, Heinz, Frey, Lothar, Erlbacher, Tobias

Journal:

Materials Science Forum

Year:

2019

Language:

english

File:

PDF, 272 KB

english, 2019

31

[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Silicon RC-Snubber for 900 V Applications Utilising non-Stoichiometric Silicon Nitride

Boettcher, N., Heckel, T., Erlbacher, T., Pelaic, K.

Year:

2019

Language:

english

File:

PDF, 694 KB

english, 2019

32

Influence of Trench Design on the Electrical Properties of 650V 4H-SiC JBS Diodes

Rusch, Oleg, Moult, Jonathan, Erlbacher, Tobias

Journal:

Materials Science Forum

Year:

2019

Language:

english

File:

PDF, 1.41 MB

english, 2019

33

Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors

Schlichting, Holger, Sledziewski, Tomasz, Bauer, Anton, Erlbacher, Tobias

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 3.25 MB

2019

34

Determination of Compensation Ratios of Al-Implanted 4H-SiC by TCAD Modelling of TLM Measurements

Kocher, Matthias, Yao, B.T., Weisse, Julietta, Rommel, Mathias, Xu, Zong Wei, Erlbacher, Tobias, Bauer, Anton

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 838 KB

2019

35

Surface Characterization of Ion Implanted 4H-SiC Epitaxial Layers with Ion Energy and Concentration Variations

Kim, Hong Ki, Kim, Seong Jun, Buettner, Jonas, Lim, Min Who, Erlbacher, Tobias, Bauer, Anton, Koo, Sang Mo, Lee, Nam Suk, Shin, Hoon Kyu

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 2.56 MB

2019

36

Channeling in 4H-SiC from an Application Point of View

Pichler, Peter, Sledziewski, Tomasz, Häublein, Volker, Bauer, Anton, Erlbacher, Tobias

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 783 KB

2019

37

Comparison between Ni-SALICIDE and Self-Aligned Lift-Off Used in Fabrication of Ohmic Contacts for SiC Power MOSFET

Sledziewski, Tomasz, Erlbacher, Tobias, Bauer, Anton, Frey, Lothar, Chen, Xi Ming, Zhao, Yan Li, Li, Cheng Zhan, Dai, Xiao Ping

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 1.09 MB

2019

38

Decoration of Al Implantation Profiles in 4H-SiC by Bevel Grinding and Dry Oxidation

Kocher, Matthias, Erlbacher, Tobias, Rommel, Mathias, Bauer, Anton

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 2.54 MB

2019

39

Performance of 4H-SiC Bipolar Diodes as Temperature Sensor at Low Temperatures

di Benedetto, Luigi, Matthus, C.D., Erlbacher, Tobias, Bauer, Anton, Licciardo, Gian Domenico, Rubino, Alfredo, Frey, Lothar

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 436 KB

2019

40

An Iterative Surface Potential Algorithm Including Interface Traps for Compact Modeling of SiC-MOSFETs

Albrecht, M., Klupfel, F. J., Erlbacher, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2020

Language:

english

File:

PDF, 3.83 MB

english, 2020

41

Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures

BesendÃ¶rfer, S., Meissner, E., Zweipfennig, T., Yacoub, H., Fahle, D., Behmenburg, H., Kalisch, H., Vescan, A., Friedrich, J., Erlbacher, T.

Journal:

Year:

2020

File:

PDF, 3.11 MB

2020

42

RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiC

Weisse, J., Matthus, C., Schlichting, H., Mitlehner, H., Erlbacher, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2020

File:

PDF, 1.77 MB

2020

43

SiC MOSFET with a Self-Aligned Channel Defined by Shallow Source-JFET Implantation: A Simulation Study

Sledziewski, Tomasz, Erlbacher, Tobias

Journal:

Materials Science Forum

Year:

2020

File:

PDF, 1.45 MB

2020

44

Impact of Channel Implantation on a 4H-SiC CMOS Operational Amplifier for High Temperature Applications

Albrecht, Matthaeus, PÃ©rez, David, Martens, R. Christian, Bauer, Anton J., Erlbacher, Tobias

Journal:

Materials Science Forum

Year:

2020

File:

PDF, 630 KB

2020

45

Über die Aceton-Verbindungen der Zucker und ihre Umwandlungsprodukte, 11. Mitteil.: Umwandlung der Monoaceton-d-glucose in 3.6-Anhydro-d-glucose

Heinz Ohle, Ladislaus von Vargha, Heinz Erlbach

Journal:

European Journal of Inorganic Chemistry

Year:

1928

Language:

german

File:

PDF, 439 KB

german, 1928

46

Über die Aceton-Verbindungen der Zucker und ihre Umwandlungsprodukte, XIII. Mitteilung: Über das Verhalten vollständig acylierter Derivate der Monoaceton-glucose gegen Bromwasserstoff-Eisessig

Heinz Ohle, Heinz Erlbach, Kurt Vogl

Journal:

European Journal of Inorganic Chemistry

Year:

1928

Language:

german

File:

PDF, 762 KB

german, 1928

47

Über die Aceton-Verbindungen der Zucker und ihre Umwandlungsprodukte, XII. Mitteilung: Über die Verlagerung der Sauerstoff-Brücke bei der Einwirkung von Bromwasserstoff-Eisessig auf Acylderivate der Monoaceton-glucose

Heinz Ohle, Heinz Erlbach

Journal:

European Journal of Inorganic Chemistry

Year:

1928

Language:

german

File:

PDF, 450 KB

german, 1928

48

Modellversuche zur Theorie der alkoholischen Gärung, II.: Die Oxydation der Monoaceton-3.6-anhydro-d-glucose

Heinz Ohle, Heinz Erlbach

Journal:

European Journal of Inorganic Chemistry

Year:

1929

Language:

german

File:

PDF, 219 KB

german, 1929

49

Untersuchungen an mehrwertigen Alkoholen, I.: Die Konstitution des Dibenzoyl-mannits von Einhorn und Holland

Heinz Ohle, Heinz Erlbach, Hans Hepp, Gerhard Toussaint

Journal:

European Journal of Inorganic Chemistry

Year:

1929

Language:

german

File:

PDF, 662 KB

german, 1929

50

d-Gluco-saccharosonsäure, ein Isomeres der Ascorbinsäure, I. Mitteil.: Darstellung und Eigenschaften

Heinz Ohle, Heinz Erlbach, Herbert Carls

Journal:

European Journal of Inorganic Chemistry

Year:

1934

Language:

german

File:

PDF, 650 KB

german, 1934

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