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51

Low Sheet Resistance of High-Dose Aluminium Implanted 4H-SiC using (11-20) Face

Negoro, Yuki, Katsumoto, K., Matsunami, Hiroyuki, Kimoto, Tsunenobu, Schmid, Frank, Pensl, Gerhard

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 401 KB

english, 2004

52

MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet Oxidation

Yano, Hiroshi, Kimoto, Tsunenobu, Matsunami, Hiroyuki, Bassler, M., Pensl, Gerhard

Journal:

Materials Science Forum

Year:

2000

File:

PDF, 361 KB

2000

53

Physics of SiC Processing

Pensl, Gerhard, Afanas'ev, Valery V., Bassler, M., Frank, Thomas, Laube, Michael, Weidner, Michael

Journal:

Materials Science Forum

Year:

2000

Language:

english

File:

PDF, 486 KB

english, 2000

54

[Advanced Texts in Physics] Silicon Carbide || Atomic Structure of SiC Surfaces

Choyke, W. J., Matsunami, H., Pensl, G.

Year:

2004

Language:

english

File:

PDF, 1.94 MB

english, 2004

55

Chalcogen Double Donors in Silicon

Pensl, Gerhard, Roos, G., Holm, C., Wagner, P.

Journal:

Materials Science Forum

Year:

1986

File:

PDF, 348 KB

1986

56

Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions

Ohshima, Takeshi, Uedono, Akira, Itoh, Hisayoshi, Yoshikawa, Masahito, Kojima, Kazutoshi, Okada, Sohei, Nashiyama, Isamu, Bouwhuis, L., Tanigawa, Shoichiro, Frank, Thomas, Pensl, Gerhard

Journal:

Materials Science Forum

Year:

2000

Language:

english

File:

PDF, 392 KB

english, 2000

57

Thermally-Assisted Tunneling Model for 3C-SiC p+-n Diodes

Zippelius, Bernd, Krieger, Michael, Weber, Heiko B., Pensl, Gerhard, Nagasawa, Hiroyuki, Kawahara, Takamitsu, Hatta, Naoki, Yagi, Kuniaki, Uchida, Hidetsugu, Kobayashi, Motoki

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 540 KB

english, 2011

58

AIP Conference Proceedings [AIP 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES: Proceedings of the E-MRS Symposium∗ F∗ - Strasbourg, (France) (8–10 October 2010)] - Electrical Characterization of p-type 3C-SiC Epilayers Grown on n-type 6H-SiC by means of Sublimation Epitaxy

Tsirimpis, A., Krieger, M., Pensl, G., Beshkova, M., Syväjärvi, M., Yakimova, R., Ferro, Gabriel, Siffert, Paul

Year:

2010

Language:

english

File:

PDF, 532 KB

english, 2010

59

Growth of SiC polytypes by the physical vapour transport technique

Semmelroth, K, Schulze, N, Pensl, G

Journal:

Journal of Physics Condensed Matter

Year:

2004

Language:

english

File:

PDF, 1.04 MB

english, 2004

60

Traps at the SiC/SiO2-Interface

Pensl, Gerhard, Bassler, Michael, Ciobanu, Florin, Afanas'ev, Valeri, Yano, Hiroshi, Kimoto, Tsunenobu, Matsunami, Hiroyuki

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 357 KB

english, 2000

61

Hall Scattering Factor of Holes and Shallow Defect Centers in Aluminum-doped SiC

Pensl, Gerhard, Ciobanu, Florin, Krieger, Michael, Laube, Michael, Reshanov, Sergey, Schmid, Frank, Wagner, Günter, Nagasawa, Hiroyuki, Schöner, Adolf

Journal:

MRS Proceedings

Year:

2002

Language:

english

File:

PDF, 296 KB

english, 2002

62

Annihilation Studies of Oxygen-Related New Donors in Cz-Si

D. Karg, A. Voigt, G. Pensl, M. Schulz, H.P. Strunk, W. Zulehner

Journal:

physica status solidi (b)

Year:

1998

Language:

english

File:

PDF, 199 KB

english, 1998

63

Oxygen-Related Defect Centers in Solar-Grade, Multicrystalline Silicon. A Reservoir of Lifetime Killers

D. Karg, G. Pensl, M. Schulz, C. Hässler, W. Koch

Journal:

physica status solidi (b)

Year:

2000

Language:

english

File:

PDF, 159 KB

english, 2000

64

Micropipes: Hollow Tubes in Silicon Carbide

J. Heindl, H. P. Strunk, V. D. Heydemann, G. Pensl

Journal:

physica status solidi (a)

Year:

1997

Language:

english

File:

PDF, 455 KB

english, 1997

65

Fabrication and Characterization of 3C-SiC-Based MOSFETs

A. Schöner, M. Krieger, G. Pensl, M. Abe, H. Nagasawa

Journal:

Chemical Vapor Deposition

Year:

2006

Language:

english

File:

PDF, 578 KB

english, 2006

66

Optical and electrical characterization of AlxGa1−xSb crystals grown by the travelling heater method

Meyer, B.K., Bischopink, G., Benz, K.W., Schöner, A., Pensl, G.

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 254 KB

english, 1993

67

Zweiquantenabsorption in ZnO

Journal:

Solid State Communications

Year:

1972

Language:

german

File:

PDF, 373 KB

german, 1972

68

Annihilation studies of oxygen-related (470°C) thermal donor centers in CZSi

W Götz, G Pensl, W Zulehner, R Addinall, R.C Newman

Journal:

Solid State Communications

Year:

1995

Language:

english

File:

PDF, 189 KB

english, 1995

69

Hydrogenation of lithium- and calcium-related defect centers in silicon

C Häβler, T Dalibor, G Pensl, W Zulehner

Journal:

Solid State Communications

Year:

1995

Language:

english

File:

PDF, 102 KB

english, 1995

70

Experimental study of the Poole-Frenkel effect on the Si:Tl acceptor

W. Keller, G. Pensl, M. Schulz

Journal:

Year:

1983

Language:

english

File:

PDF, 462 KB

english, 1983

71

Implantation-induced defects in silicon carbide

G Pensl, T Frank, M Krieger, M Laube, S Reshanov, F Schmid, M Weidner

Journal:

Physica B: Condensed Matter

Year:

2003

Language:

english

File:

PDF, 377 KB

english, 2003

72

CVD growth and characterization of single-crystalline 6H silicon carbide

S. Karmann, C. Haberstroh, F. Engelbrecht, W. Suttrop, A. Schöner, M. Schadt, R. Helbig, G. Pensl, R.A. Stein, S. Leibenzeder

Journal:

Physica B: Condensed Matter

Year:

1993

Language:

english

File:

PDF, 352 KB

english, 1993

73

Electrical and optical characterization of SiC

G. Pensl, W.J. Choyke

Journal:

Physica B: Condensed Matter

Year:

1993

Language:

english

File:

PDF, 1.68 MB

english, 1993

74

Hydrogen passivation and thermal reactivation of zinc double acceptors in silicon

P Stolz, G Pensl, D Grünebaum, N Stolwijk

Journal:

Materials Science and Engineering: B

Year:

1989

Language:

english

File:

PDF, 308 KB

english, 1989

75

Quenched-in, fast-diffusing defects in silicon studied by the perturbed angular correlation method

U. Reislöhner, S. Deubler, P. Dohlus, D. Forkel, J. Meier, H. Plank, H. Wolf, W. Witthuhn, G. Pensl

Journal:

Materials Science and Engineering: B

Year:

1989

Language:

english

File:

PDF, 292 KB

english, 1989

76

Growth of cubic SiC single crystals by the physical vapor transport technique

K. Semmelroth, M. Krieger, G. Pensl, H. Nagasawa, R. Püsche, M. Hundhausen, L. Ley, M. Nerding, H.P. Strunk

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 708 KB

english, 2007

77

2 MeV ion irradiation effects on AlGaN/GaN HFET devices

G. Sonia, E. Richter, F. Brunner, A. Denker, R. Lossy, M. Mai, F. Lenk, J. Bundesmann, G. Pensl, J. Schmidt, U. Zeimer, L. Wang, K. Baskar, M. Weyers, J. Würfl, G. Tränkle

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 289 KB

english, 2008

78

Characterization of homoepitaxial SiC layers

J. Schmitt, T. Troffer, K. Christiansen, M. Schadt, S. Christiansen, R. Helbig, G. Pensl, H.P. Strunk

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 348 KB

english, 1997

79

Proton trapping in SiO2 layers thermally grown on Si and SiC

V.V. Afanas’ev, F. Ciobanu, G. Pensl, A. Stesmans

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 187 KB

english, 2002

80

Degradation of 6HSiC MOS capacitors operated at high temperatures

M. Bassler, V.V. Afanas'ev, G. Pensl, M. Schulz

Journal:

Microelectronic Engineering

Year:

1999

Language:

english

File:

PDF, 320 KB

english, 1999

81

Electrically active centers in light emitting Si : Er/Si structures grown by the sublimation MBE method

V.B. Shmagin, B.A. Andreev, E.N. Morozova, Z.F. Krasil’nik, D.I. Kryzhkov, V.P. Kuznetsov, E.A. Uskova, C.A.J. Ammerlaan, G. Pensl

Journal:

Physica B: Condensed Matter

Year:

2001

Language:

english

File:

PDF, 112 KB

english, 2001

82

Formation and annihilation of intrinsic-related defect centers in high energy electron-irradiated or ion-implanted 4H– and 6H–silicon carbide

M. Weidner, T. Frank, G. Pensl, A. Kawasuso, H. Itoh, R. Krause-Rehberg

Journal:

Physica B: Condensed Matter

Year:

2001

Language:

english

File:

PDF, 237 KB

english, 2001

83

Vacancies in He-implanted 4H and 6H SiC epilayers studied by positron annihilation

A. Kawasuso, M. Weidner, F. Redmann, T. Frank, P. Sperr, R. Krause-Rehberg, W. Triftshäuser, G. Pensl

Journal:

Physica B: Condensed Matter

Year:

2001

Language:

english

File:

PDF, 159 KB

english, 2001

84

Electrical and optical properties of erbium-related centers in 6H silicon carbide

O Klettke, S.A Reshanov, G Pensl, Y Shishkin, R.P Devaty, W.J Choyke

Journal:

Physica B: Condensed Matter

Year:

2001

Language:

english

File:

PDF, 412 KB

english, 2001

85

Material quality improvements for high voltage 4H-SiC diodes

E. Kalinina, V. Kossov, A. Shchukarev, V. Bratus, G Pensl, S. Rendakova, V. Dmitriev, A. Hallen

Journal:

Materials Science and Engineering: B

Year:

2001

Language:

english

File:

PDF, 415 KB

english, 2001

86

Near-thermal equilibrium growth of SiC by physical vapor transport

Norbert Schulze, Donovan L. Barrett, Gerhard Pensl, Stefan Rohmfeld, Martin Hundhausen

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 196 KB

english, 1999

87

Long-time constant-capacitance DLTS investigations of 6H SiC/MOS structures: comparison of dry and wet oxidation

M. Bassler, G. Pensl

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 115 KB

english, 1999

88

Oxygen in silicon carbide: shallow donors and deep acceptors

Thomas Dalibor, Hubert Trageser, Gerhard Pensl, Tsunenobu Kimoto, Hiroyuki Matsunami, Daniel Nizhner, Oleg Shigiltchoff, Wolfgang J. Choyke

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 183 KB

english, 1999

89

Formation and annihilation of oxygen donors in multicrystalline silicon for solar cells

C Häßler, H.-U Höfs, W Koch, G Stollwerck, A Müller, D Karg, G Pensl

Journal:

Materials Science and Engineering: B

Year:

2000

Language:

english

File:

PDF, 395 KB

english, 2000

90

Grain Boundaries in Multicrystalline Silicon. Characterization by Admittance and EBIC Measurements

C. Hässler, G. Pensl, M. Schulz, A. Voigt, H. P. Strunk

Journal:

physica status solidi (a)

Year:

1993

Language:

english

File:

PDF, 1.07 MB

english, 1993

91

Preface: phys. stat. sol. (b) 245/7

Lothar Ley, Gerhard Pensl

Journal:

physica status solidi (b)

Year:

2008

Language:

english

File:

PDF, 50 KB

english, 2008

92

Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors

M. Krieger, S. Beljakowa, L. Trapaidze, T. Frank, H. B. Weber, G. Pensl, N. Hatta, M. Abe, H. Nagasawa, A. Schöner

Journal:

physica status solidi (b)

Year:

2008

Language:

english

File:

PDF, 1.10 MB

english, 2008

93

Negative U-properties of the oxygen-vacancy in ZnO

Daniel Pfisterer, Joachim Sann, Detlev M. Hofmann, Bruno Meyer, Thomas Frank, Gerhard Pensl, R. Tena-Zaera, J. Zúñiga-Pérez, C. Martinez-Tomas, V. Muñoz-Sanjosé

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 325 KB

english, 2006

94

High and low energy proton irradiation effects on AlGaN/GaN HFETs

G. Sonia, E. Richter, R. Lossy, M. Mai, J. Schmidt, M. Weyers, G. Tränkle, A. Denker, J. Opitz-Coutureau, G. Pensl, I. Brauer, H. P. Strunk

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 352 KB

english, 2006

95

Deep level transient spectroscopy on radioactive impurities: Demonstration for Si:111In*

M. Lang, G. Pensl, M. Gebhard, N. Achtziger, M. Uhrmacher

Journal:

Applied Physics A: Materials Science & Processing

Year:

1991

Language:

english

File:

PDF, 700 KB

english, 1991

96

Boron-related deep centers in 6H-SiC

W. Suttrop, G. Pensl, P. Lanig

Journal:

Applied Physics A: Materials Science & Processing

Year:

1990

Language:

english

File:

PDF, 679 KB

english, 1990

97

Infrared transmissivity of heavily doped contact layers on extrinsic silicon IR-detectors

K. Hölzlein, G. Pensl, M. Schulz

Journal:

Applied Physics A: Materials Science & Processing

Year:

1980

Language:

english

File:

PDF, 695 KB

english, 1980

98

Lichtelektrische Leitung und Polarisation durch Laserstrahlung im Volumen von ZnO-Kristallen

E. Mollwo, G. Pensl

Journal:

Zeitschrift für Physik A Hadrons and Nuclei

Year:

1969

File:

PDF, 1.57 MB

1969

99

Energetically deep defect centers in vapor-phase grown zinc oxide

T. Frank, G. Pensl, R. Tena-Zaera, J. Zúñiga-Pérez, C. Martínez-Tomás, V. Muñoz-Sanjosé, T. Ohshima, H. Itoh, D. Hofmann, D. Pfisterer, J. Sann, B. Meyer

Journal:

Applied Physics A: Materials Science & Processing

Year:

2007

Language:

english

File:

PDF, 617 KB

english, 2007

100

Study of in-depth strain variation in ion-irradiated GaN

Martin Herms, Ute Zeimer, Gnanapragasam Sonia, Frank Brunner, Eberhard Richter, Markus Weyers, Günther Tränkle, Thomas Behm, Gert Irmer, Gerhard Pensl, Andrea Denker, Jörg Opitz-Coutureau

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2008

Language:

english

File:

PDF, 331 KB

english, 2008