Jean Pierre Colinge: search on Z-Library

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51

Beam-recrystallised silicon-on-insulator films: can devices lives with grain boundaries?

Jean-Pierre Colinge

Journal:

Microelectronics Journal

Year:

1983

Language:

english

File:

PDF, 1009 KB

english, 1983

52

Unclamped inductive switching behaviour of high power SOI vertical DMOS transistors with lateral drain contacts

Kuntjoro Pinardi, Ulrich Heinle, Stefan Bengtsson, Jörgen Olsson, Jean-Pierre Colinge

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 276 KB

english, 2002

53

Substrate influences on fully depleted enhancement mode SOI MOSFETs at room temperature and at 77 K

Marcelo Antonio Pavanello, João Antonio Martino, Jean-Pierre Colinge

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 441 KB

english, 1997

54

Analytical modeling of the substrate influences on accumulation-mode SOI pMOSFETs at room temperature and at liquid nitrogen temperature

Marcelo Antonio Pavanello, João Antonio Martino, Jean-Pierre Colinge

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 443 KB

english, 1997

55

Study on titanium salicide process for thin-film SOI devices

Jian Chen, Jean-Pierre Colinge

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 321 KB

english, 1997

56

Analytical modeling of the substrate effect on accumulation-mode SOI pMOSFETs at room temperature and at 77 K

Marcelo Antonio Pavanello, João Antonio Martino, Jean-Pierre Colinge

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 233 KB

english, 1997

57

A new F(ast)-CMS NEGF algorithm for efficient 3D simulations of

Aryan Afzalian, Nima Dehdashti Akhavan, Chi-Woo Lee, Ran Yan, Isabelle Ferain, Pedram Razavi, Jean-Pierre Colinge

Journal:

Journal of Computational Electronics

Year:

2009

Language:

english

File:

PDF, 1.42 MB

english, 2009

58

Microelectronics education in Belgium

Jean-Pierre Colinge

Journal:

Materials Science and Engineering: A

Year:

1995

Language:

english

File:

PDF, 421 KB

english, 1995

59

[Engineering Materials] Semiconductor-On-Insulator Materials for Nanoelectronics Applications Volume 5H || SOI Nanowire Transistors for Femtomole Electronic Detectors of Single Particles and Molecules in Bioliquids and Gases

Nazarov, Alexei, Colinge, J.-P., Balestra, Francis, Raskin, Jean-Pierre, Gamiz, Francisco, Lysenko, V.S.

Year:

2011

Language:

english

File:

PDF, 418 KB

english, 2011

60

Influence of discrete dopant on quantum transport in silicon nanowire transistors

Nima Dehdashti Akhavan, Isabelle Ferain, Ran Yu, Pedram Razavi, Jean-Pierre Colinge

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 2.20 MB

english, 2012

61

[Engineering Materials] Semiconductor-On-Insulator Materials for Nanoelectronics Applications || Engineering Pseudosubstrates with Porous Silicon Technology

Nazarov, Alexei, Colinge, J.-P., Balestra, Francis, Raskin, Jean-Pierre, Gamiz, Francisco, Lysenko, V.S.

Year:

2011

Language:

english

File:

PDF, 1016 KB

english, 2011

62

Emission and absorption of optical phonons in Multigate Silicon Nanowire MOSFETs

Dehdashti Akhavan, Nima, Ferain, Isabelle, Yu, Ran, Razavi, Pedram, Colinge, Jean-Pierre

Journal:

Journal of Computational Electronics

Year:

2012

Language:

english

File:

PDF, 2.28 MB

english, 2012

63

FinFETs and Other Multi-Gate Transistors || Multi-Gate MOSFET Circuit Design

Colinge, Jean-Pierre

Year:

2008

Language:

english

File:

PDF, 2.05 MB

english, 2008

64

[Engineering Materials] Semiconductor-On-Insulator Materials for Nanoelectronics Applications || Floating-Body SOI Memory: The Scaling Tournament

Nazarov, Alexei, Colinge, J.-P., Balestra, Francis, Raskin, Jean-Pierre, Gamiz, Francisco, Lysenko, V.S.

Year:

2011

Language:

english

File:

PDF, 1.42 MB

english, 2011

65

[Engineering Materials] Semiconductor-On-Insulator Materials for Nanoelectronics Applications || Confined and Guided Vapor–Liquid–Solid Catalytic Growth of Silicon Nanoribbons: From Nanowires to Structured Silicon-on-Insulator Layers

Nazarov, Alexei, Colinge, J.-P., Balestra, Francis, Raskin, Jean-Pierre, Gamiz, Francisco, Lysenko, V.S.

Year:

2011

Language:

english

File:

PDF, 1.35 MB

english, 2011

66

[Engineering Materials] Semiconductor-On-Insulator Materials for Nanoelectronics Applications || Investigation of Tri-Gate FinFETs by Noise Methods

Nazarov, Alexei, Colinge, J.-P., Balestra, Francis, Raskin, Jean-Pierre, Gamiz, Francisco, Lysenko, V.S.

Year:

2011

Language:

english

File:

PDF, 1.04 MB

english, 2011

67

Negative-bias-temperature-instability and hot carrier effects in nanowire junctionless p-channel multigate transistors

Tae Park, Jong, Young Kim, Jin, Pierre Colinge, Jean

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 908 KB

english, 2012

68

Mobility improvement in nanowire junctionless transistors by uniaxial strain

Raskin, Jean-Pierre, Colinge, Jean-Pierre, Ferain, Isabelle, Kranti, Abhinav, Lee, Chi-Woo, Akhavan, Nima Dehdashti, Yan, Ran, Razavi, Pedram, Yu, Ran

Journal:

Applied Physics Letters

Year:

2010

Language:

english

File:

PDF, 559 KB

english, 2010

69

Improvement of carrier ballisticity in junctionless nanowire transistors

Dehdashti Akhavan, Nima, Ferain, Isabelle, Razavi, Pedram, Yu, Ran, Colinge, Jean-Pierre

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 6.30 MB

english, 2011

70

Cryogenic Operation of Junctionless Nanowire Transistors

de Souza, Michelly, Pavanello, Marcelo A., Trevisoli, Renan D., Doria, Rodrigo T., Colinge, Jean-Pierre

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 206 KB

english, 2011

71

Device Design and Estimated Performance for p-Type Junctionless Transistors on Bulk Germanium Substrates

Yu, Ran, Das, Samaresh, Ferain, Isabelle, Razavi, Pedram, Shayesteh, Maryam, Kranti, Abhinav, Duffy, Ray, Colinge, Jean-Pierre

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 858 KB

english, 2012

72

[Engineering Materials] Semiconductor-On-Insulator Materials for Nanoelectronics Applications || FinFETs and Their Futures

Nazarov, Alexei, Colinge, J.-P., Balestra, Francis, Raskin, Jean-Pierre, Gamiz, Francisco, Lysenko, V.S.

Year:

2011

Language:

english

File:

PDF, 850 KB

english, 2011

73

[Engineering Materials] Semiconductor-On-Insulator Materials for Nanoelectronics Applications || Single Dopant and Single Electron Effects in CMOS Devices

Nazarov, Alexei, Colinge, J.-P., Balestra, Francis, Raskin, Jean-Pierre, Gamiz, Francisco, Lysenko, V.S.

Year:

2011

Language:

english

File:

PDF, 605 KB

english, 2011

74

[Engineering Materials] Semiconductor-On-Insulator Materials for Nanoelectronics Applications || Ultrathin n-Channel and p-Channel SOI MOSFETs

Nazarov, Alexei, Colinge, J.-P., Balestra, Francis, Raskin, Jean-Pierre, Gamiz, Francisco, Lysenko, V.S.

Year:

2011

Language:

english

File:

PDF, 870 KB

english, 2011

75

A Proposed Confinement Modulated Gap Nanowire Transistor Based on a Metal (Tin)

Ansari, Lida, Fagas, Giorgos, Colinge, Jean-Pierre, Greer, James C.

Journal:

Year:

2012

Language:

english

File:

PDF, 4.41 MB

english, 2012

76

[IEEE 2011 IEEE International SOI Conference - Tempe, AZ, USA (2011.10.3-2011.10.6)] IEEE 2011 International SOI Conference - Random dopant variation in junctionless nanowire transistors

Akhavan, Nima Dehdashti, Ferain, Isabelle, Razavi, Pedram, Yu, Ran, Colinge, Jean-Pierre

Year:

2011

Language:

english

File:

PDF, 462 KB

english, 2011

77

[IEEE 2007 IEEE International SOI Conference - Indian Wells, CA, USA (2007.10.1-2007.10.4)] 2007 IEEE International SOI Conference - Study of Fin Profiles and MuGFETs built on SOI Wafers with a Nitride-Oxide Buried Layer (NOx-BL) as the Buried Insulator Layer

Patruno, Paul, Kostrzewa, Marek, Landry, Karine, Xiong, Weize, Cleavelin, C. Rinn, Hsu, Che-Hua, Ma, Mike, Colinge, Jean-Pierre

Year:

2007

Language:

english

File:

PDF, 1.13 MB

english, 2007

78

[IEEE 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - Grenoble, France (2012.03.6-2012.03.7)] 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - Intrinsic gate delay and energy-delay product in junctionless nanowire transistors

Razavi, Pedram, Ferain, Isabelle, Das, Samaresh, Yu, Ran, Akhavan, Nima Dehdashti, Colinge, Jean-Pierre

Year:

2012

Language:

english

File:

PDF, 343 KB

english, 2012

79

[IEEE 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - Grenoble, France (2012.03.6-2012.03.7)] 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - Top-down process of Germanium nanowires using EBL exposure of Hydrogen Silsesquioxane resist

Yu, Ran, Das, Samaresh, Hobbs, Richard, Georgiev, Yordan, Ferain, Isabelle, Razavi, Pedram, Akhavan, Nima Dehdashti, Colinge, Cynthia A., Colinge, Jean-Pierre

Year:

2012

File:

PDF, 1.54 MB

2012

80

Hot carrier-induced SOI MOSFET degradation under AC stress conditions

Jae-Ki Lee,, Nag-Jong Choi,, Yun-Bong Hyun,, Chong-Gun Yu,, Jean-Pierre Colinge,, Jong-Tae Park,

Journal:

IEEE Electron Device Letters

Year:

2002

Language:

english

File:

PDF, 182 KB

english, 2002

81

[IEEE 2009 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA) - Hsinchu, Taiwan (2009.04.27-2009.04.29)] 2009 International Symposium on VLSI Technology, Systems, and Applications - Influence of gate misalignment on the electrical characteristics of MuGFETs

Lee, Chi-Woo, Afzalian, Aryan, Yan, Ran, Dehdashti, Nima, Xiong, Weize, Colinge, Jean-Pierre

Year:

2009

Language:

english

File:

PDF, 262 KB

english, 2009

82

[IEEE 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) - Bologna, Italy (2010.09.6-2010.09.8)] 2010 International Conference on Simulation of Semiconductor Processes and Devices - Dissipative transport in Multigate silicon nanowire transistors

Dehdashti, Nima, Kranti, Abhinav, Ferain, Isabelle, Lee, Chi-Woo, Yan, Ran, Razavi, Pedram, Yu, Ran, Colinge, Jean-Pierre

Year:

2010

Language:

english

File:

PDF, 377 KB

english, 2010

83

Quantum Confinement Effects in Capacitance Behavior of Multigate Silicon Nanowire MOSFETs

Afzalian, Aryan, Lee, Chi-Woo, Dehdashti Akhavan, Nima, Yan, Ran, Ferain, Isabelle, Colinge, Jean-Pierre

Journal:

IEEE Transactions on Nanotechnology

Year:

2011

Language:

english

File:

PDF, 1.39 MB

english, 2011

84

[IEEE ESSDERC 2008 - 38th European Solid-State Device Research Conference - Edinburgh, UK (2008.09.15-2008.09.19)] ESSDERC 2008 - 38th European Solid-State Device Research Conference - Influence of gate underlap in AM and IM MuGFETs

Chi-Woo Lee,, Afzalian, Aryan, Yan, Ran, Dehdashti, Nima, Weize Xiong,, Colinge, Jean-Pierre

Year:

2008

Language:

english

File:

PDF, 332 KB

english, 2008

85

[IEEE 2011 12th International Conference on Ultimate Integration on Silicon (ULIS) - Cork, Ireland (2011.03.14-2011.03.16)] Ulis 2011 Ultimate Integration on Silicon - Atomic scale simulation of a junctionless silicon nanowire transistor

Ansari, Lida, Feldman, Baruch, Fagas, Giorgos, Colinge, Jean-Pierre, Greer, James C.

Year:

2011

Language:

english

File:

PDF, 424 KB

english, 2011

86

Influence of carrier confinement on the subthreshold swing of multigate silicon-on-insulator transistors

Colinge, Jean-Pierre, Afzalian, Aryan, Lee, Chi-Woo, Yan, Ran, Akhavan, Nima Dehdashti

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 562 KB

english, 2008

87

[IEEE 2011 12th International Conference on Ultimate Integration on Silicon (ULIS) - Cork, Ireland (2011.03.14-2011.03.16)] Ulis 2011 Ultimate Integration on Silicon - Atomic scale simulation of a junctionless silicon nanowire transistor

Ansari, Lida, Feldman, Baruch, Fagas, Giorgos, Colinge, Jean-Pierre, Greer, James C.

Year:

2011

Language:

english

File:

PDF, 284 KB

english, 2011

88

Silicon-on-Insulator Technology: Materials to VLSI ||

Colinge, Jean-Pierre

Year:

1997

Language:

english

File:

PDF, 24.72 MB

english, 1997

89

ECS Transactions [AAPM 25th Symposium on Microelectronics Technology and Devices - Sao Paulo, Brazil (September 6 - September 9, 2010)] - Analog Operation and Harmonic Distortion Temperature Dependence of nMOS Junctionless Transistors

Doria, Rodrigo T., Pavanello, Marcelo A., Lee, Chi-Woo, Ferain, Isabelle, Dehdashti-Akhavan, Nima, Yan, Ran, Razavi, Pedram, Yu, Ran, Kranti, Abhinav, Colinge, Jean-Pierre, Pavanello, M., Claeys, C.,

Year:

2010

Language:

english

File:

PDF, 1.45 MB

english, 2010

90

ECS Transactions [ECS 219th ECS Meeting - Montreal, QC, Canada (May 1 - May 6, 2011)] - Comparative Study of Random Telegraph Noise in Junctionless and Inversion-Mode MuGFETs

Nazarov, Aleksey, Lee, Chi-Woo, Kranti, Abhinav, Ferain, Isabelle, Yan, Ran, Dehdashti Akhavan, Nima, Razavi, Pedram, Yu, Ran, Colinge, Jean-Pierre

Year:

2011

Language:

english

File:

PDF, 428 KB

english, 2011

91

[ECS 215th ECS Meeting - San Francisco, CA (May 24 - May 29, 2009)] ECS Transactions - Quantization Effect in Capacitance Behavior of Nanoscale Silicon Multigate Mosfets

Afzalian, Aryan, Lee, Chi-Woo, Yan, Ran, Dehdashti Akhavan, Nima, Colinge, Cindy, Colinge, Jean-Pierre

Year:

2009

Language:

english

File:

PDF, 706 KB

english, 2009

92

[IEEE 2007 International Semiconductor Conference (CAS 2007) - Sinaia, Romania (2007.10.15-2007.09.17)] 2007 International Semiconductor Conference - From Gate-all-Around to Nanowire MOSFETs

Colinge, Jean-Pierre

Year:

2007

Language:

english

File:

PDF, 3.91 MB

english, 2007

93

[ECS 215th ECS Meeting - San Francisco, CA (May 24 - May 29, 2009)] ECS Transactions - Three-Dimensional NEGF Simulations of Constriction Tunnel Barrier Silicon Nanowire MUGFETs

Afzalian, Aryan, Lee, Chi-Woo, Yan, Ran, Dehdashti Akhavan, Nima, Colinge, Cindy, Colinge, Jean-Pierre

Year:

2009

Language:

english

File:

PDF, 377 KB

english, 2009

94

Properties of Accumulation-Mode Multi-Gate Field-Effect Transistors

Colinge, Jean-Pierre, Lederer, Dimitri, Afzalian, Aryan, Yan, Ran, Lee, Chi-Woo, Akhavan, Nima Dehdashti, Xiong, Weize

Journal:

Japanese Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 250 KB

english, 2009

95

Fabrication of Twin Nano Silicon Wires Based on Arsenic Dopant Effect

Tang, Xiaohui, Baie, Xavier, Colinge, Jean-Pierre

Journal:

Japanese Journal of Applied Physics

Year:

1998

File:

PDF, 841 KB

1998

96

[IEEE 2012 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Japan (2012.05.9-2012.05.11)] 2012 IEEE International Meeting for Future of Electron Devices, Kansai - Junctionless transistors

Colinge, Jean-Pierre

Year:

2012

Language:

english

File:

PDF, 238 KB

english, 2012

97

[IEEE 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Granada (2018.3.19-2018.3.21)] 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Innovative tunnel FET architectures

Llorente, Carlos Diaz, Martinie, Sebastien, Cristoloveanu, Sorin, Colinge, Jean-Pierre, Le Royer, Cyrille, Wan, Jing, Ghibaudo, Gerard, Vinet, Maud

Year:

2018

Language:

english

File:

PDF, 1010 KB

english, 2018

98

Persistent FloatingâBody Effects in Fully Depleted SiliconâOnâInsulator Transistors

Park, Hyungjin, Colinge, Jean-Pierre, Cristoloveanu, Sorin, Bawedin, Maryline

Journal:

physica status solidi (a)

Year:

2020

Language:

english

File:

PDF, 1.64 MB

english, 2020

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