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51

Electrical properties of single delta-doped InGaP/InGaAs/GaAs pseudomorphic HEMT with camel-like gate structure

Jung-Hui Tsai, King-Poul Zhu

Journal:

Materials Chemistry and Physics

Year:

2003

Language:

english

File:

PDF, 71 KB

english, 2003

52

Heterostructure-emitter and pseudomorphic base transistor (hepbt) with a graded AlxGa1−xAs confinement layer

Jung-Hui Tsai, Huey-Ing Chen, Wen-Chau Liu

Journal:

Materials Chemistry and Physics

Year:

1997

Language:

english

File:

PDF, 326 KB

english, 1997

53

Investigation of an AlInAs/GaInAs superlattice-confined emitter bipolar transistor (SCEBT)

Po-Hung Lin, Shiou-Ying Cheng, Wen-Lung Chang, Hsi-Jen Pan, Yung-Hsin Shie, Wen-Chau Liu, Jung-Hui Tsai

Journal:

Materials Chemistry and Physics

Year:

1998

Language:

english

File:

PDF, 185 KB

english, 1998

54

Influence of channel doping-profile on camel-gate field effect transistors

Wen-Shiung Lour, Jung-Hui Tsai, Lih-Wen Laih, Wen-Chau Liu

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 637 KB

english, 1996

55

A novel InGaP/GaAs S-shaped negative-differential-resistance (NDR) switch for multiple-valued logic applications

Wen-Chau Liu, Jung-Hui Tsai, Wen-Shiung Lour, Lih-Wen Laih, Shiou-Ying Cheng, Kong-Beng Thei, Cheng-Zu Wu

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 396 KB

english, 1997

56

On the InGaP/GaAs/InGaAs camel-like FET for high-breakdown, low-leakage, and high-temperature operations

Wen-Chau Liu, Kuo-Hui Yu, Kun-Wei Lin, Jung-Hui Tsai, Cheng-Zu Wu, Kuan-Po Lin, Chih-Hung Yen

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 187 KB

english, 2001

57

DC performance of InP/InGaAs p-n-p heterostructure-emitter bipolar transistor

Jung-Hui Tsai, Yu-Chi Kang

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 122 KB

english, 2006

58

Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers

Jung-Hui Tsai, Sheng-Shiun Ye, Der-Feng Guo, Wen-Shiung Lour

Journal:

Year:

2012

Language:

english

File:

PDF, 241 KB

english, 2012

59

[IEEE 2009 IEEE International Vacuum Electronics Conference (IVEC) - Rome, Italy (2009.04.28-2009.04.30)] 2009 IEEE International Vacuum Electronics Conference - An optoelectronic switch

Der-Feng Guo,, Wen-Chau Liu,, Jung-Hui Tsai,

Year:

2009

Language:

english

File:

PDF, 429 KB

english, 2009

60

Unidirectional sensing characteristics of structured Au–GaN–Pt diodes for differential-pair hydrogen sensors

Chieh Lo, Shih-Wei Tan, Chih-Ying Wei, Jung-Hui Tsai, Kuo-Yen Hsu, Wen-Shiung Lour

Journal:

International Journal of Hydrogen Energy

Year:

2012

Language:

english

File:

PDF, 1012 KB

english, 2012

61

Sensing properties of resistive-type hydrogen sensors with a Pd–SiO2 thin-film mixture

Chieh Lo, Shih-Wei Tan, Chih-Yin Wei, Jung-Hui Tsai, Wen-Shiung Lour

Journal:

International Journal of Hydrogen Energy

Year:

2013

Language:

english

File:

PDF, 696 KB

english, 2013

62

Characteristics of a GaAs-InGaAs quantum-well resonant-tunneling switch

Guo, Der-Feng, Laih, Lih-Wen, Tsai, Jung-Hui, Liu, Wen-Chau, Hsu, Wei-Chou

Journal:

Journal of Applied Physics

Year:

1995

Language:

english

File:

PDF, 666 KB

english, 1995

63

Comparative investigation of InP/InGaAs abrupt, setback, and heterostructure-emitter heterojunction bipolar transistors

Tsai, Jung-Hui, Huang, Chia-Hong, Ma, Yung-Chun, Wu, You-Ren

Journal:

Year:

2012

Language:

english

File:

PDF, 201 KB

english, 2012

64

The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory

Huang, Jen-Wei, Zhang, Rui, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Lou, J. C., Young, Tai-Fa, Chen, Jung-Hui, Chen, Hsin-Lu, Pan, Yin-Chih, Huang, Xuan, Zhang, Fengyan, Syu, Yong-En,

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.34 MB

english, 2013

65

Performance and characteristics of double layer porous silicon oxide resistance random access memory

Tsai, Tsung-Ming, Chang, Kuan-Chang, Zhang, Rui, Chang, Ting-Chang, Lou, J. C., Chen, Jung-Hui, Young, Tai-Fa, Tseng, Bae-Heng, Shih, Chih-Cheng, Pan, Yin-Chih, Chen, Min-Chen, Pan, Jhih-Hong, Syu, Yo

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.55 MB

english, 2013

66

Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage

Tsai, Jung-Hui, Chiu, Shao-Yen, Lour, Wen-Shiung, Guo, Der-Feng, Liu, Wen-Chau

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 173 KB

english, 2006

67

MOS solar cells with oxides deposited by sol-gel spin-coating techniques

Chia-Hong Huang, Chung-Cheng Chang, Jung-Hui Tsai

Journal:

Year:

2013

Language:

english

File:

PDF, 397 KB

english, 2013

68

Application of an AlGaAs/GaAs/InGaAs heterostructure emitter for a resonant-tunneling transistor

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 346 KB

english, 1999

69

High performance of graphene oxide-doped silicon oxide-based resistance random access memory

Zhang, Rui, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Chen, Kai-Huang, Lou, Jen-Chung, Chen, Jung-Hui, Young, Tai-Fa, Shih, Chih-Cheng, Yang, Ya-Liang, Pan, Yin-Chih, Chu, Tian-Jian, Hua

Journal:

Nanoscale Research Letters

Year:

2013

Language:

english

File:

PDF, 484 KB

english, 2013

70

Hydrogen induced redox mechanism in amorphous carbon resistive random access memory

Chen, Yi-Jiun, Chen, Hsin-Lu, Young, Tai-Fa, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Zhang, Rui, Chen, Kai-Huang, Lou, Jen-Chung, Chu, Tian-Jian, Chen, Jung-Hui, Bao, Ding-Hua, Sze, Si

Journal:

Nanoscale Research Letters

Year:

2014

Language:

english

File:

PDF, 470 KB

english, 2014

71

Space electric field concentrated effect for Zr:SiO2RRAM devices using porous SiO2buffer layer

Chang, Kuan-Chang, Huang, Jen-wei, Chang, Ting-Chang, Tsai, Tsung-Ming, Chen, Kai-Huang, Young, Tai-Fa, Chen, Jung-Hui, Zhang, Rui, Lou, Jen-Chung, Huang, Syuan-Yong, Pan, Yin-Chih, Huang, Hui-Chun, S

Journal:

Nanoscale Research Letters

Year:

2013

Language:

english

File:

PDF, 578 KB

english, 2013

72

Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices

Chen, Kai-Huang, Zhang, Rui, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Lou, J. C., Young, Tai-Fa, Chen, Jung-Hui, Shih, Chih-Cheng, Tung, Cheng-Wei, Syu, Yong-En, Sze, Simon M.

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.07 MB

english, 2013

73

High-performance InP/InGaAs co-integrated metamorphic heterostructure bipolar and field-effect transistors with pseudomorphic base-emitter spacer and channel layers

Wu, Yi-Chen, Tsai, Jung-Hui, Chiang, Te-Kuang, Chiang, Chung-Cheng, Wang, Fu-Min

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 706 KB

english, 2014

74

Investigation of InP/InGaAs metamorphic co-integrated complementary doping-channel field-effect transistors for logic application

Journal:

Superlattices and Microstructures

Year:

2014

Language:

english

File:

PDF, 502 KB

english, 2014

75

Comparative study of InP/InGaAs double heterojunction bipolar transistors with InGaAsP spacer at base-collector junction

Tsai, Jung-Hui, Lee, Ching-Sung, Jhou, Jia-Cing, Wu, You-Ren, Chiang, Chung-Cheng, Chao, Yi-Ting, Liu, Wen-Chau

Journal:

Year:

2013

Language:

english

File:

PDF, 243 KB

english, 2013

76

Comparative investigation of InP/InGaAs heterostructure-emitter tunneling and superlattice bipolar transistors

Tsai, Jung-Hui, Lee, Ching-Sung, Chiang, Chung-Cheng, Chao, Yi-Ting

Journal:

Year:

2014

Language:

english

File:

PDF, 180 KB

english, 2014

77

Effects of the Use of an Aluminum Reflecting and an ${\rm SiO}_{2}$ Insulating Layers (RIL) on the Performance of a GaN-Based Light-Emitting Diode With the Naturally Textured p-GaN Surface

Liou, Jian-Kai, Chen, Chun-Chia, Chou, Po-Cheng, Cheng, Shiou-Ying, Tsai, Jung-Hui, Liu, Rong-Chau, Liu, Wen-Chau

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.69 MB

english, 2013

78

InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)

Wen-Chau Liu,, Shiou-Ying Cheng,, Jung-Hui Tsai,, Po-Hung Lin,, Jing-Yuh Chen,, Wei-Chou Wang,

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 71 KB

english, 1997

79

High-performance AlGaInP tunneling heterostructure-emitter bipolar transistor

Journal:

Superlattices and Microstructures

Year:

2014

Language:

english

File:

PDF, 488 KB

english, 2014

80

Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory

Kuan-Chang Chang,, Tsung-Ming Tsai,, Ting-Chang Chang,, Kai-Huang Chen,, Rui Zhang,, Zhi-Yang Wang,, Jung-Hui Chen,, Tai-Fa Young,, Min-Chen Chen,, Tian-Jian Chu,, Syuan-Yong Huang,, Yong-E

Journal:

IEEE Electron Device Letters

Year:

2014

Language:

english

File:

PDF, 686 KB

english, 2014

81

[IEEE 2006 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, Australia (2006.12.6-2006.12.8)] 2006 Conference on Optoelectronic and Microelectronic Materials and Devices - An AlGaAs/GaAs/InAlGaP Optoelectronic Switch

Weng, Tzu-Yen, Tsai, Jung-Hui, Guo, Der-Feng

Year:

2006

Language:

english

File:

PDF, 1.88 MB

english, 2006

82

[IEEE 2008 International Workshop on Junction Technology (IWJT) - Shanghai, China (2008.05.15-2008.05.16)] Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08) - Influence of emitter ledge width on the characteristics of InGaP/GaAs heterojunction bipolar transistors

Kuei-Yi Chu,, Shiou-Ying Cheng,, Tzu-Pin Chen,, Li-Yang Chen,, Tsung-Han Tsai,, Jung-Hui Tsai,, Wen-Chau Liu,

Year:

2008

Language:

english

File:

PDF, 99 KB

english, 2008

83

[IEEE 2006 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, Australia (2006.12.6-2006.12.8)] 2006 Conference on Optoelectronic and Microelectronic Materials and Devices - Investigation of an InGaP/GaAs/InGaAs Step-Emitter Bipolar Transistor

Tsai, Jung-Hui, Guo, Der-Feng, Weng, Tzu-Yen, Wu, Ching-Han

Year:

2006

Language:

english

File:

PDF, 255 KB

english, 2006

84

[IEEE 1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. - Hong Kong (6-10 Nov. 1995)] 1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings - Three-terminal switching device with InGaAs/GaAs/InGaAs hole confinement layer

Wen-Shiung Lour,, Wen-Chau Liu,, Jung-Hui Tsai,, Lih-Wen Laih,, Jiann-Ru Chen,, Ming-Kwen Tsai,

Year:

1995

Language:

english

File:

PDF, 286 KB

english, 1995

85

[IEEE 2008 International Workshop on Junction Technology (IWJT) - Shanghai, China (2008.05.15-2008.05.16)] Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08) - Investigation of InP/InGaAs Double Heterojunction Bipolar Transistor (DHBT) with a step-graded InAlGaAs/InP collector structure

Tzu-Pin Chen,, Wei-Hsin Chen,, Kuei-Yi Chu,, Li-Yang Chen,, Chi-Jhung Lee,, Shiou-Ying Cheng,, Jung-Hui Tsai,, Wen-Chau Liu,

Year:

2008

Language:

english

File:

PDF, 123 KB

english, 2008

86

Endurance Improvement Technology With Nitrogen Implanted in the Interface of ${\rm WSiO}_{\bf x}$ Resistance Switching Device

Syu, Yong-En, Zhang, Rui, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Lou, Jen-Chung, Young, Tai-Fa, Chen, Jung-Hui, Chen, Min-Chen, Yang, Ya-Liang, Shih, Chih-Cheng, Chu, Tian-Jian, Chen,

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 547 KB

english, 2013

87

[IEEE Extended Abstracts of the Fourth International Workshop on Junction Technology - Shanghai, China (15-16 March 2004)] The Fourth International Workshop on Junction Technology, 2004. IWJT '04. - A new S-shaped switch based on an InGaP/GaAs/InGaAs step-compositional-emitter heterojunction bipolar transistor

Jung-Hui Tsai,, Shao-Yen Chiu,, Ying-Cheng Chu,, King-Poul Zhu,

Year:

2004

Language:

english

File:

PDF, 196 KB

english, 2004

88

Multiple negative-differential-resistance (NDR) of InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT)

Wen-Chau Liu,, Jung-Hui Tsai,, Wen-Shiung Lour,, Lih-Wen Laih,, Kong-Beng Thei,, Cheng-Zu Wu,

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 299 KB

english, 1996

89

Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment

Chang, Kuan-Chang, Pan, Chih-Hung, Chang, Ting-Chang, Tsai, Tsung-Ming, Zhang, Rui, Lou, Jen-Chung, Young, Tai-Fa, Chen, Jung-Hui, Shih, Chih-Cheng, Chu, Tian-Jian, Chen, Jian-Yu, Su, Yu-Ting, Jiang,

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 553 KB

english, 2013

90

Heterojunction Bipolar Transistor

Shao-Yen Chiu,, Jung-Hui Tsai,, Hsuan-Wei Huang,, Kun-Chieh Liang,, Tzung-Min Tsai,, Kuo-Yen Hsu,, Wen-Shung Lour,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 314 KB

english, 2009

91

[IEEE 1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. - Hong Kong (6-10 Nov. 1995)] 1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings - GaAs tri-step high-low doping channel field effect transistor

Wen-Chau Liu,, Jung-Hui Tsai,, Lih-Wen,, Kong-Beng Thei,, Chang-Zn Wu,, Wen-Shung Lour,, Yuan-Tzu,, Rong-Chau Liu,

Year:

1995

Language:

english

File:

PDF, 254 KB

english, 1995

92

[IEEE 2006 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA (2006.12.6-2006.12.8)] 2006 Conference on Optoelectronic and Microelectronic Materials and Devices - An improved InP/InGaAs pnp HBT with δ-doped sheet between emitter-base junction

Jung-Hui Tsai,, Der-Feng Guo,, Tzu-Yen Weng,, Yu-Chi Kang,, Ching-Han Wu,, I-Hsuan Hsu,

Year:

2006

Language:

english

File:

PDF, 2.01 MB

english, 2006

93

[IEEE 2008 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) - Sydney, Australia (2008.07.28-2008.08.1)] 2008 Conference on Optoelectronic and Microelectronic Materials and Devices - Investigation on electro-optical switch using heterojunction phototransistors with double emitter

Chiu, Shao-Yen, Wu, Chung-Hsien, Tsai, Jung-Hui, Lour, Wen-Shiung

Year:

2008

Language:

english

File:

PDF, 98 KB

english, 2008

94

Observation of the multiple negative-differential-resistance of metal-insulator-semiconductor-like structure with step-compositioned In/sub x/Ga/sub 1-x/As quantum wells

Wen-Chau Liu,, Lih-Wen Laih,, Cheng-Zu Wu,, Shiou-Ying Chen,, Jung-Hui Tsai,

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 103 KB

english, 1997

95

A novel InGaP/InGaAs/GaAs double /spl delta/-doped pHEMT with camel-like gate structure

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 301 KB

english, 2003

96

Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor

Chen, Li-Yang, Cheng, Shiou-Ying, Lour, Wen-Shiung, Tsai, Jung-Hui, Guo, Der-Feng, Tsai, Tsung-Han, Chen, Tzu-Pin, Liu, Yi-Chun, Liu, Wen-Chau

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 232 KB

english, 2008

97

[IEEE 2008 International Workshop on Junction Technology (IWJT) - Shanghai, China (2008.05.15-2008.05.16)] Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08) - Improved formal passivations of pseudomorphic high electron mobility transistors

Li-Yang Chen,, Shiou-Ying Cheng,, Kuei-Yi Chu,, Jung-Hui Tsai,, Tzu-Pin Chen,, Tsung-Han Tsai,, Wen-Chau Liu,

Year:

2008

Language:

english

File:

PDF, 299 KB

english, 2008

98

[IEEE 2006 International Workshop on Junction Technology - Shanghai, China ()] 2006 International Workshop on Junction Technology - High-Performance InGaP/GaAs pnp δ-Doped Heterojunction Bipolar Transistor

Shao-Yen Chiu,, Wen-Shiung Lour,, Jung-Hui Tsai,, Yu-Chi Kang,

Year:

2006

Language:

english

File:

PDF, 2.43 MB

english, 2006

99

[IEEE Proceedings of the 34th European Solid-State Device Research Conference - Leuven, Belgium (21-23 Sept. 2004)] Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) - Investigation of InP/InGaAs pnp δ-doped heterojunction bipolar transistor

Jung-Hui Tsai,, King-Poul Zhu,, Ying-Cheng Chu,, Shao-Yen Chiu,

Year:

2004

Language:

english

File:

PDF, 159 KB

english, 2004

100

Low Temperature Improvement Method on ${\rm Zn{:}SiO}_{x}$ Resistive Random Access Memory Devices

Chang, Kuan-Chang, Tsai, Tsung-Ming, Chang, Ting-Chang, Wu, Hsing-Hua, Chen, Kai-Huang, Chen, Jung-Hui, Young, Tai-Fa, Chu, Tian-Jian, Chen, Jian-Yu, Pan, Chih-Hung, Su, Yu-Ting, Syu, Yong-En, Tung, C

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 415 KB

english, 2013