M.A. Moram: search on Z-Library

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51

Accurate experimental determination of the Poissonâs ratio of GaN using high-resolution x-ray diffraction

Moram, M. A., Barber, Z. H., Humphreys, C. J.

Journal:

Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 311 KB

english, 2007

52

Coherent terahertz acoustic vibrations in polar and semipolar gallium nitride-based superlattices

Moss, D. M., Akimov, A. V., Kent, A. J., Glavin, B. A., Kappers, M. J., Hollander, J. L., Moram, M. A., Humphreys, C. J.

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 432 KB

english, 2009

53

The effect of wafer curvature on x-ray rocking curves from gallium nitride films

Moram, M. A., Vickers, M. E., Kappers, M. J., Humphreys, C. J.

Journal:

Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 662 KB

english, 2008

54

Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth

HaÌberlen, M., Badcock, T. J., Moram, M. A., Hollander, J. L., Kappers, M. J., Dawson, P., Humphreys, C. J., Oliver, R. A.

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 2.37 MB

english, 2010

55

The effects of Si doping on dislocation movement and tensile stress in GaN films

Moram, M. A., Kappers, M. J., Massabuau, F., Oliver, R. A., Humphreys, C. J.

Journal:

Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 858 KB

english, 2011

56

On the origin of threading dislocations in GaN films

Moram, M. A., Ghedia, C. S., Rao, D. V. S., Barnard, J. S., Zhang, Y., Kappers, M. J., Humphreys, C. J.

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 1.46 MB

english, 2009

57

Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy

Hertkorn, J., Thapa, S. B., Wunderer, T., Scholz, F., Wu, Z. H., Wei, Q. Y., Ponce, F. A., Moram, M. A., Humphreys, C. J., Vierheilig, C., Schwarz, U. T.

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 809 KB

english, 2009

58

Inclined dislocation arrays in AlGaN/AlGaN quantum well structures emitting at 290 nm

Chang, T. Y., Moram, M. A., McAleese, C., Kappers, M. J., Humphreys, C. J.

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 1.18 MB

english, 2010

59

Response to âComment on âThe effects of Si doping on dislocation movement and tensile stress in GaN filmsââ [J. Appl. Phys. 109, 073509 (2011)]

Moram, M. A., Kappers, M. J., Massabuau, F., Oliver, R. A., Humphreys, C. J.

Journal:

Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 333 KB

english, 2011

60

Understanding x-ray diffraction of nonpolar gallium nitride films

Moram, M. A., Johnston, C. F., Hollander, J. L., Kappers, M. J., Humphreys, C. J.

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 896 KB

english, 2009

61

Elastic constants and critical thicknesses of ScGaN and ScAlN

Zhang, S., Fu, W. Y., Holec, D., Humphreys, C. J., Moram, M. A.

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 932 KB

english, 2013

62

[IEEE 2011 Digital Signal Processing and Signal Processing Education Meeting (DSP/SPE) - Sedona, AZ, USA (2011.01.4-2011.01.7)] 2011 Digital Signal Processing and Signal Processing Education Meeting (DSP/SPE) - Superresolution using the optimal recovery framework with automatic Generalized Cross-Validation

Moram, Veenarai, Cabrera, Sergio D.

Year:

2011

Language:

english

File:

PDF, 375 KB

english, 2011

63

Structure and electronic properties of mixed (a + c) dislocation cores in GaN

Horton, M. K., Rhode, S. L., Moram, M. A.

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 2.19 MB

english, 2014

64

Young’s modulus, Poisson’s ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon

Moram, M. A., Barber, Z. H., Humphreys, C. J., Joyce, T. B., Chalker, P. R.

Journal:

Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 401 KB

english, 2006

65

Coincident Electron Channeling and Cathodoluminescence Studies of Threading Dislocations in GaN

Naresh-Kumar, Gunasekar, Bruckbauer, Jochen, Edwards, Paul R., Kraeusel, Simon, Hourahine, Ben, Martin, Robert W., Kappers, Menno J., Moram, Michelle A., Lovelock, Stephen, Oliver, Rachel A., Humphrey

Journal:

Microscopy and Microanalysis

Year:

2014

Language:

english

File:

PDF, 292 KB

english, 2014

66

ScGaN and ScAlN: emerging nitride materials

Moram, M. A., Zhang, S.

Journal:

Journal of Materials Chemistry A

Year:

2014

Language:

english

File:

PDF, 877 KB

english, 2014

67

Electronic structure and local distortions in epitaxial ScGaN films

Knoll, S M, Rovezzi, M, Zhang, S, Joyce, T B, Moram, M A

Journal:

Journal of Physics Condensed Matter

Year:

2014

Language:

english

File:

PDF, 1.21 MB

english, 2014

68

Defects in epitaxial ScGaN: Dislocations, stacking faults, and cubic inclusions

Knoll, S. M., Rhode, S. K., Zhang, S., Joyce, T. B., Moram, M. A.

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.38 MB

english, 2014

69

Dislocation reduction in gallium nitride films using scandium nitride interlayers

Moram, M. A., Zhang, Y., Kappers, M. J., Barber, Z. H., Humphreys, C. J.

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 459 KB

english, 2007

70

Defect reduction in (1122) semipolar GaN grown on m-plane sapphire using ScN interlayers

Johnston, C. F., Moram, M. A., Kappers, M. J., Humphreys, C. J.

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 541 KB

english, 2009

71

Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides

Zhang, Siyuan, Holec, David, Fu, Wai Yuen, Humphreys, Colin J., Moram, Michelle A.

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 2.10 MB

english, 2013

72

Mg Doping Affects Dislocation Core Structures in GaN

Rhode, S. K., Horton, M. K., Kappers, M. J., Zhang, S., Humphreys, C. J., Dusane, R. O., Sahonta, S. -L., Moram, M. A.

Journal:

Physical Review Letters

Year:

2013

Language:

english

File:

PDF, 229 KB

english, 2013

73

Remarks on the spectrum of the Neumann problem with magnetic field in the half-space

Morame, Abderemane, Truc, Françoise

Journal:

Journal of Mathematical Physics

Year:

2005

Language:

english

File:

PDF, 380 KB

english, 2005

74

Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells

Badcock, T. J., Hao, R., Moram, M. A., Kappers, M. J., Dawson, P., Oliver, R. A., Humphreys, C. J.

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 705 KB

english, 2012

75

The absolute continuity of the spectrum of Maxwell operator in a periodic media

Morame, Abderemane

Journal:

Journal of Mathematical Physics

Year:

2000

Language:

english

File:

PDF, 354 KB

english, 2000

76

Band gap and electronic structure of MgSiN2

Quirk, J. B., Råsander, M., McGilvery, C. M., Palgrave, R., Moram, M. A.

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.78 MB

english, 2014

77

Structural properties of wurtzitelike ScGaN films grown by NH[sub 3]-molecular beam epitaxy

Moram, M. A., Zhang, Y., Joyce, T. B., Holec, D., Chalker, P. R., Mayrhofer, P. H., Kappers, M. J., Humphreys, C. J.

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 906 KB

english, 2009

78

The dissociation of the [ a + c ] dislocation in GaN

Hirsch, P.B., Lozano, J.G., Rhode, S., Horton, M.K., Moram, M.A., Zhang, S., Kappers, M.J., Humphreys, C.J., Yasuhara, A., Okunishi, E., Nellist, P.D.

Journal:

Philosophical Magazine

Year:

2013

Language:

english

File:

PDF, 553 KB

english, 2013

79

Segregation of In to Dislocations in InGaN

Horton, Matthew K., Rhode, Sneha, Sahonta, Suman-Lata, Kappers, Menno J., Haigh, Sarah J., Pennycook, Timothy J., Humphreys, Colin J., Dusane, Rajiv O., Moram, Michelle A.

Journal:

Year:

2015

Language:

english

File:

PDF, 524 KB

english, 2015

80

Carbon nanotube (CNT) forest grown on diamond-like carbon (DLC) thin films significantly improves electrochemical sensitivity and selectivity towards dopamine

Sainio, Sami, Palomäki, Tommi, Rhode, Sneha, Kauppila, Minna, Pitkänen, Olli, Selkälä, Tuula, Toth, Geza, Moram, Michelle, Kordas, Krisztian, Koskinen, Jari, Laurila, Tomi

Journal:

Sensors and Actuators B: Chemical

Year:

2015

Language:

english

File:

PDF, 606 KB

english, 2015

81

The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on $r$-Plane Sapphire Substrates

Badcock, Tom J., Hao, Rui, Moram, Michelle A., Kappers, Menno J., Dawson, Phil, Humphreys, Colin J.

Journal:

Japanese Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 422 KB

english, 2011

82

Dislocation Climb in c -Plane AlN Films

Fu, Wai Yuen, Kappers, Menno J., Zhang, Yucheng, Humphreys, Colin J., Moram, Michelle A.

Journal:

Applied Physics Express

Year:

2011

Language:

english

File:

PDF, 1.13 MB

english, 2011

83

Band gaps of wurtzite ScxGa1−xN alloys

Tsui, H. C. L., Goff, L. E., Rhode, S. K., Pereira, S., Beere, H. E., Farrer, I., Nicoll, C. A., Ritchie, D. A., Moram, M. A.

Journal:

Applied Physics Letters

Year:

2015

Language:

english

File:

PDF, 810 KB

english, 2015

84

Measuring dislocation densities in nonpolar a -plane GaN films using atomic force microscopy

Moram, M A, Johnston, C F, Kappers, M J, Humphreys, C J

Journal:

Journal of Physics D Applied Physics

Year:

2010

Language:

english

File:

PDF, 722 KB

english, 2010

85

The effects of film surface roughness on x-ray diffraction of nonpolar gallium nitride films

Moram, M A, Johnston, C F, Kappers, M J, Humphreys, C J

Journal:

Journal of Physics D Applied Physics

Year:

2009

Language:

english

File:

PDF, 246 KB

english, 2009

86

Absence of singular spectrum for a perturbation of a two-dimensional Laplace-Beltrami operator with periodic electromagnetic potential

Morame, Abderemane

Journal:

Journal of Physics A: Mathematical and General Physics

Year:

1998

Language:

english

File:

PDF, 154 KB

english, 1998

87

Optical fluence modelling for ultraviolet light emitting diode-based water treatment systems

Simons, R., Gabbai, U.E., Moram, M.A.

Journal:

Year:

2014

Language:

english

File:

PDF, 1.39 MB

english, 2014

88

Piezoelectric coefficients and spontaneous polarization of ScAlN

Caro, Miguel A, Zhang, Siyuan, Riekkinen, Tommi, Ylilammi, Markku, Moram, Michelle A, Lopez-Acevedo, Olga, Molarius, Jyrki, Laurila, Tomi

Journal:

Journal of Physics Condensed Matter

Year:

2015

Language:

english

File:

PDF, 1.34 MB

english, 2015

89

A dissociation mechanism for the [a+c] dislocation in GaN

Nellist, P D, Hirsch, P B, Rhode, S, Horton, M K, Lozano, J G, Yasuhara, A, Okunishi, E, Zhang, S, Sahonta, S-L, Kappers, M J, Humphreys, C J, Moram, M A

Journal:

Journal of Physics Conference Series

Year:

2014

Language:

english

File:

PDF, 900 KB

english, 2014

90

Profile of disabilities and their associated factors in patients with type 2 diabetes evaluated by the Canadian occupational performance measure: the Rio De Janeiro type 2 diabetes cohort study

Marinho, Fernanda S., Moram, Camila B. M., Rodrigues, Priscila C., Franzoi, Ana C. O. B., Salles, Gil F., Cardoso, Claudia R. L.

Journal:

Disability & Rehabilitation

Year:

2016

Language:

english

File:

PDF, 829 KB

english, 2016

91

Corrigendum to “Carbon nanotube (CNT) forest on diamond-like carbon (DLC) electrode improves electrochemical sensitivity towards dopamine by two orders of magnitude” [Sens. Actuators B 211 (2015) 177–186]

Sainio, S., Palomäki, T., Rhode, S., Kauppila, M., Pitkänen, O., Selkälä, T., Toth, G., Kordas, K., Moram, M., Koskinen, J., Laurila, T.

Journal:

Sensors and Actuators B: Chemical

Year:

2016

Language:

english

File:

PDF, 134 KB

english, 2016

92

SPIE Proceedings [SPIE SPIE Defense, Security, and Sensing - Orlando, Florida, United States (Monday 25 April 2011)] Wireless Sensing, Localization, and Processing VI - Sensor deployment optimization based on optimal recovery interpolation

Cabrera, Sergio D., Dianat, Sohail A., Zoltowski, Michael D., Moram, Veenarai, Rosiles, Jose Gerardo

Year:

2011

Language:

english

File:

PDF, 2.52 MB

english, 2011

93

The impact of ScO x N y interlayers on unintentional doping and threading dislocations in GaN

Zhu, T, Moram, M A, Rao, D V Sridhara, Li, H, Kappers, M J, Oliver, R A

Journal:

Journal of Physics Conference Series

Year:

2010

Language:

english

File:

PDF, 1.35 MB

english, 2010

94

The effect of metal-rich growth conditions on the microstructure of Sc x Ga 1− x N films grown using molecular beam epitaxy

Tsui, H. C. L., Goff, L. E., Barradas, N. P., Alves, E., Pereira, S., Beere, H. E., Farrer, I., Nicoll, C. A., Ritchie, D. A., Moram, M. A.

Journal:

physica status solidi (a)

Year:

2015

Language:

english

File:

PDF, 464 KB

english, 2015

95

Valence band offsets of Sc x Ga 1− x N/AlN and Sc x Ga 1− x N/GaN heterojunctions

Tsui, H C L, Goff, L E, Palgrave, R G, Beere, H E, Farrer, I, Ritchie, D A, Moram, M A

Journal:

Journal of Physics D Applied Physics

Year:

2016

Language:

english

File:

PDF, 546 KB

english, 2016

96

Composition measurement of epitaxial Sc x Ga 1− x N films

Tsui, H C L, Goff, L E, Barradas, N P, Alves, E, Pereira, S, Palgrave, R G, Davies, R J, Beere, H E, Farrer, I, Ritchie, D A, Moram, M A

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 978 KB

english, 2016

97

Semiclassical analysis for a Schrödinger operator with a U(2) artificial gauge: The periodic case

Morame, Abderemane, Truc, Françoise

Journal:

Reviews in Mathematical Physics

Year:

2016

Language:

english

File:

PDF, 256 KB

english, 2016

98

Band gap bowing in NixMg1−xO

Niedermeier, Christian A., Råsander, Mikael, Rhode, Sneha, Kachkanov, Vyacheslav, Zou, Bin, Alford, Neil, Moram, Michelle A.

Journal:

Scientific Reports

Year:

2016

Language:

english

File:

PDF, 1.62 MB

english, 2016

99

Electronic structure of the high and low pressure polymorphs of MgSiN 2

Råsander, M, Moram, M A

Journal:

Materials Research Express

Year:

2016

Language:

english

File:

PDF, 1.51 MB

english, 2016

100

Dislocation core structures in (0001) InGaN

Rhode, S. L., Horton, M. K., Sahonta, S.-L., Kappers, M. J., Haigh, S. J., Pennycook, T. J., McAleese, C., Humphreys, C. J., Dusane, R. O., Moram, M. A.

Journal:

Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 1.64 MB

english, 2016