O. Kordina: search on Z-Library

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1

Der Schadensfall an der Mainbrücke bei Hochheim.

Deinhard, J. M., Kordina, K., Molzahn, R., Storkebaum, K.-H.

Journal:

Beton- und Stahlbetonbau

Year:

1977

File:

PDF, 1.44 MB

1977

2

Electron effective masses in 4H SiC

Son, N. T., Chen, W. M., Kordina, O., Konstantinov, A. O., Monemar, B., JanzeÌn, E., Hofman, D. M., Volm, D., Drechsler, M., Meyer, B. K.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 419 KB

english, 1995

3

Bemessung von Stahlbeton- und Spannbetonbalken unter kombinierter Beanspruchung infolge von Biegung, Querkraft und Torsion.

Kordina, K., Teutsch, M.

Journal:

Beton- und Stahlbetonbau

Year:

1983

File:

PDF, 1015 KB

1983

4

Growth of SiC by “Hot-Wall” CVD and HTCVD

O. Kordina, C. Hallin, A. Henry, J. P. Bergman, I. Ivanov, A. Ellison, N. T. Son, E. Janzén

Journal:

physica status solidi (b)

Year:

1997

Language:

english

File:

PDF, 361 KB

english, 1997

5

SiC epitaxy growth using chloride-based CVD

Anne Henry, Stefano Leone, Franziska C. Beyer, Henrik Pedersen, Olof Kordina, Sven Andersson, Erik Janzén

Journal:

Physica B: Condensed Matter

Year:

2012

Language:

english

File:

PDF, 475 KB

english, 2012

6

High Growth Rate of 4H-SiC Epilayers on On-Axis Substrates with Different Chlorinated Precursors

Leone, Stefano, Beyer, Franziska C., Pedersen, Henrik, Kordina, Olof, Henry, Anne, Janzén, Erik

Journal:

Crystal Growth & Design

Year:

2010

Language:

english

File:

PDF, 2.94 MB

english, 2010

7

Zum Wiederaufbau der Frauenkirche zu Dresden - Tragsystem der Kuppel und deren Brandverhalten

Journal:

Year:

1998

Language:

german

File:

PDF, 266 KB

german, 1998

8

Zur Berechnung und Bemessung von Einzel-Fundamentplatten nach EC 2 Teil 1.

Journal:

Beton- und Stahlbetonbau

Year:

1994

File:

PDF, 523 KB

1994

9

Preventive fire protection in nuclear power plants

K. Kordina, R. Dobbernack

Journal:

Nuclear Engineering and Design

Year:

1988

Language:

english

File:

PDF, 595 KB

english, 1988

10

Bulk growth of 6H-SiC on non-basal quasi-polar faces

Y. Shishkin, O. Kordina

Journal:

Journal of Crystal Growth

Year:

2006

Language:

english

File:

PDF, 160 KB

english, 2006

11

Improved morphology for epitaxial growth on 4° off-axis 4H-SiC substrates

S. Leone, H. Pedersen, A. Henry, O. Kordina, E. Janzén

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 750 KB

english, 2009

12

Growth characteristics of SiC in a hot-wall CVD reactor with rotation

J. Zhang, U. Forsberg, M. Isacson, A. Ellison, A. Henry, O. Kordina, E. Janzén

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 193 KB

english, 2002

13

Determination of the electron effective-mass tensor in 4 H SiC

Volm, D., Meyer, B. K., Hofmann, D. M., Chen, W. M., Son, N. T., Persson, C., Lindefelt, U., Kordina, O., Sörman, E., Konstantinov, A. O., Monemar, B., Janzén, E.

Journal:

Physical Review B

Year:

1996

Language:

english

File:

PDF, 93 KB

english, 1996

14

Chloride-Based SiC Epitaxial Growth toward Low Temperature Bulk Growth

Leone, Stefano, Beyer, Franziska C., Henry, Anne, Hemmingsson, Carl, Kordina, Olof, Janzén, Erik

Journal:

Crystal Growth & Design

Year:

2010

Language:

english

File:

PDF, 4.86 MB

english, 2010

15

Capture cross sections of electron irradiation induced defects in 6H–SiC

C. Hemmingsson, N. T. Son, O. Kordina, E. Janzén, J. L. Lindström

Year:

1998

Language:

english

File:

PDF, 346 KB

english, 1998

16

Dynamics of the nitrogen-bound excitons in 6 H SiC

Bergman, J. P., Harris, C. I., Kordina, O., Henry, A., Janzén, E.

Journal:

Physical Review B

Year:

1994

Language:

english

File:

PDF, 259 KB

english, 1994

17

Zur Ermittlung der Biegebruch-Tragfähigkeit bei Vorspannung ohne Verbund.

Kordina, K., Hegger, J.

Journal:

Beton- und Stahlbetonbau

Year:

1987

File:

PDF, 977 KB

1987

18

Zur Schubtragfähigkeit von Stahlbeton- und Spannbetonbalken.

Kordina, K., Hegger, J.

Journal:

Beton- und Stahlbetonbau

Year:

1987

File:

PDF, 855 KB

1987

19

Über das Verformungsverhalten von Stahlbeton-Rahmenecken und -knoten (Teil 2).

Journal:

Beton- und Stahlbetonbau

Year:

1997

File:

PDF, 603 KB

1997

20

Über das Verformungsverhalten von Stahlbeton-Rahmenecken und -knoten (Teil 1).

Journal:

Beton- und Stahlbetonbau

Year:

1997

File:

PDF, 1007 KB

1997

21

Zum Tragsicherheitsnachweis gegenüber Schub, Torsion und Durchstanzen nach EC 2 Teil 1 - Erläuterungen zur Neuauflage von Heft 425 und Anwendungsrichtlinie zu EC 2.

Journal:

Beton- und Stahlbetonbau

Year:

1994

File:

PDF, 729 KB

1994

22

Silicon Chemistry in Fluorinated Chemical Vapor Deposition of Silicon Carbide

Stenberg, Pontus, Sukkaew, Pitsiri, Farkas, Ildiko, Kordina, Olof, Janzén, Erik, Ojamäe, Lars, Danielsson, Örjan, Pedersen, Henrik

Journal:

The Journal of Physical Chemistry C

Year:

2017

Language:

english

File:

PDF, 2.76 MB

english, 2017

23

A GaN–SiC hybrid material for high-frequency and power electronics

Chen, Jr-Tai, Bergsten, Johan, Lu, Jun, Janzén, Erik, Thorsell, Mattias, Hultman, Lars, Rorsman, Niklas, Kordina, Olof

Journal:

Applied Physics Letters

Year:

2018

Language:

english

File:

PDF, 908 KB

english, 2018

24

Erratum: “A GaN–SiC hybrid material for high-frequency and power electronics” [Appl. Phys. Lett. 113 , 041605 (2018)]

Chen, Jr-Tai, Bergsten, Johan, Lu, Jun, Janzén, Erik, Thorsell, Mattias, Hultman, Lars, Rorsman, Niklas, Kordina, Olof

Journal:

Applied Physics Letters

Year:

2018

Language:

english

File:

PDF, 188 KB

english, 2018

25

On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs

Rzin, M., Chini, A., De Santi, C., Meneghini, M., Hugger, A., Hollmer, M., Stieglauer, H., Madel, M., Splettstößer, J., Sommer, D., Grünenpütt, J., Beilenhoff, K., Blanck, H., Chen, J.-T., Kordina, O.

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 1.48 MB

english, 2018

26

Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer

Malmros, Anna, Chen, Jr-Tai, Hjelmgren, Hans, Lu, Jun, Hultman, Lars, Kordina, Olof, Sveinbjornsson, Einar O., Zirath, Herbert, Rorsman, Niklas

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.75 MB

english, 2019

27

Time Resolved Spectroscopy of Defects in SiC

J. P. Bergman, O. Kordina, E. Janzén

Journal:

physica status solidi (a)

Year:

1997

Language:

english

File:

PDF, 235 KB

english, 1997

28

Zur Entwicklung der bauaufsichtlichen Bestimmungen – ein Essay – Ein Beitrag zum Festkolloquium “Der Bauingenieur im 20. und 21. Jahrhundert”

Journal:

Year:

2004

Language:

german

File:

PDF, 521 KB

german, 2004

29

Growth of 3CSiC on on-axis Si(100) substrates by chemical vapor deposition

O. Kordina, L.-O. Björketun, A. Henry, C. Hallin, R.C. Glass, L. Hultman, J.-E. Sundgren, E. Janzén

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 1.23 MB

english, 1995

30

Impurity concentration determination in 6H-SiC

A Henry, O Kordina, C Hallin, C Hemmingsson, E Janzén

Journal:

Solid State Communications

Year:

1995

Language:

english

File:

PDF, 111 KB

english, 1995

31

Important role of shallow impurities in carrier recombination in SiC

W.M Chen, N.T Son, E Sörman, O Kordina, J.P Bergman, A Henry, B Monemar, E Janzèn

Journal:

Solid State Communications

Year:

1995

Language:

english

File:

PDF, 86 KB

english, 1995

32

High growth rates (>30 μm/h) of 4H–SiC epitaxial layers using a horizontal hot-wall CVD reactor

R.L. Myers, Y. Shishkin, O. Kordina, S.E. Saddow

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 187 KB

english, 2005

33

Chlorinated precursor study in low temperature chemical vapor deposition of 4H-SiC

S. Leone, F.C. Beyer, H. Pedersen, S. Andersson, O. Kordina, A. Henry, E. Janzén

Journal:

Thin Solid Films

Year:

2011

Language:

english

File:

PDF, 1.93 MB

english, 2011

34

The material quality of CVD-grown SiC using different carbon precursors

C. Hallin, I.G. Ivanov, T. Egilsson, A. Henry, O. Kordina, E. Janzén

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 1.95 MB

english, 1998

35

Capacitance transient studies of electron irradiated 4H-SiC

C. Hemmingsson, N.T. Son, O. Kordina, E. Janzén, J.L. Lindström, S. Savage, N. Nordell

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 344 KB

english, 1997

36

SiC material for high-power applications

E. Janzén, O. Kordina

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 712 KB

english, 1997

37

Progress in SiC: from material growth to commercial device development

C.H. Carter, Jr., V.F. Tsvetkov, R.C. Glass, D. Henshall, M. Brady, St.G. Müller, O. Kordina, K. Irvine, J.A. Edmond, H.-S. Kong, R. Singh, S.T. Allen, J.W. Palmour

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 348 KB

english, 1999

38

Thick homoepitaxial layers grown on on-axis Si-face 6H- and 4H-SiC substrates with HCl addition

S. Leone, H. Pedersen, A. Henry, O. Kordina, E. Janzén

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 1.14 MB

english, 2009

39

The mechanism for cubic SiC formation on off-oriented substrates

A.O. Konstantinov, C. Hallin, B. Pécz, O. Kordina, E. Janzén

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 1.38 MB

english, 1997

40

In situ substrate preparation for high-quality SiC chemical vapour deposition

C. Hallin, F. Owman, P. Mårtensson, A. Ellison, A. Konstantinov, O. Kordina, E. Janzén

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 1.28 MB

english, 1997

41

Chloride-based CVD of 3C-SiC epitaxial layers on 6H(0001) SiC

Stefano Leone, Franziska C. Beyer, Anne Henry, Olof Kordina, Erik Janzén

Journal:

physica status solidi (RRL) - Rapid Research Letters

Year:

2010

Language:

english

File:

PDF, 383 KB

english, 2010

42

Growth of smooth 4H-SiC epilayers on 4° off-axis substrates with chloride-based CVD at very high growth rate

S. Leone, F.C. Beyer, H. Pedersen, O. Kordina, A. Henry, E. Janzén

Journal:

Materials Research Bulletin

Year:

2011

Language:

english

File:

PDF, 694 KB

english, 2011

43

Electron effective masses and mobilities in high-purity 6HâSiC chemical vapor deposition layers

Son, N. T., Kordina, O., Konstantinov, A. O., Chen, W. M., SoÌrman, E., Monemar, B., JanzeÌn, E.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 411 KB

english, 1994

44

The minority carrier lifetime of n-type 4H- and 6H-SiC epitaxial layers

Kordina, O., Bergman, J. P., Hallin, C., JanzeÌn, E.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 680 KB

english, 1996

45

On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide

Yazdanfar, M., Pedersen, H., Sukkaew, P., Ivanov, I.G., Danielsson, Ö., Kordina, O., Janzén, E.

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 1.27 MB

english, 2014

46

Shortcomings of CVD modeling of SiC today

Danielsson, Ö., Sukkaew, P., Ojamäe, L., Kordina, O., Janzén, E.

Journal:

Theoretical Chemistry Accounts: Theory, Computation, and Modeling (Theoretica Chimica Acta)

Year:

2013

Language:

english

File:

PDF, 699 KB

english, 2013

47

Beton unter Langzeit-Zugbeanspruchung

Journal:

Year:

1999

Language:

german

File:

PDF, 185 KB

german, 1999

48

2.5 kV ion-implanted p+ n diodes in 6H-SiC

Rottner, K.H., Schöner, A., Savage, S.M., Frischholz, M., Hallin, C., Kordina, O., Janzén, E.

Journal:

Diamond and Related Materials

Year:

1997

Language:

english

File:

PDF, 628 KB

english, 1997

49

Wafer warpage, crystal bending and interface properties of 4H-SiC epi-wafers

Ellison, A., Radamson, H., Tuominen, M., Milita, S., Hallin, C., Henry, A., Kordina, O., Tuomi, T., Yakimova, R., Madar, R., Janzén, E.

Journal:

Diamond and Related Materials

Year:

1997

Language:

english

File:

PDF, 774 KB

english, 1997

50

The origin of 3C polytype inclusions in epitaxial layers of silicon carbide grown by chemical vapour deposition

Hallin, C., Konstantinov, A.O., Pécz, B., Kordina, O., Janzén, E.

Journal:

Diamond and Related Materials

Year:

1997

Language:

english

File:

PDF, 932 KB

english, 1997