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51

[IEEE Technical Digest., International Electron Devices Meeting - San Francisco, CA, USA (11-14 Dec. 1988)] Technical Digest., International Electron Devices Meeting - A model for titanium silicide film growth

Borucki, L., Mann, R., Miles, G., Slinkman, J., Sullivan, T.

Year:

1988

File:

PDF, 267 KB

1988

52

The dependence of channel length on channel width in narrow-channel CMOS devices for 0.35-0.13 μm technologies

Hook, T.B., Biesemans, S., Slinkman, J.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 63 KB

english, 2000

53

Two-step dopant diffusion study performed in two dimensions by scanning capacitance microscopy and TSUPREM IV

Kim, J., McMurray, J. S., Williams, C. C., Slinkman, J.

Journal:

Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 319 KB

english, 1998

54

Observation of intersubband transitions to motionally bound states

Zhang, Y., Zhang, A., Slinkman, J., Doezema, R. E.

Journal:

Physical Review B

Year:

1991

Language:

english

File:

PDF, 114 KB

english, 1991

55

Accurate analytic approximation for magnetic-field penetration into superconducting aluminum

Huffaker, J. N., Lawrence, W. E., Slinkman, J.

Journal:

Physical Review B

Year:

1990

Language:

english

File:

PDF, 128 KB

english, 1990

56

Fully self-consistent calculation of the electronic structure of n -type InAs accumulation layers

Zhang, An-zhen, Slinkman, J., Doezema, R. E.

Journal:

Physical Review B

Year:

1991

Language:

english

File:

PDF, 305 KB

english, 1991

57

Study of end of range loop interactions with B+ implant damage using a boron doped diffusion layer

Listebarger, J. K., Robinson, H. G., Jones, K. S., Law, M. E., Sieloff, D. D., Slinkman, J. A., Sedgwick, T. O.

Journal:

Journal of Applied Physics

Year:

1995

Language:

english

File:

PDF, 897 KB

english, 1995

58

[IEEE International Technical Digest on Electron Devices - San Francisco, CA, USA (9-12 Dec. 1990)] International Technical Digest on Electron Devices - Lateral dopant profiling in MOS structures on a 100 nm scale using scanning capacitance microscopy

Slinkman, J.A., Williams, C.C., Abraham, D.W., Wickramasinghe, H.K.

Year:

1990

Language:

english

File:

PDF, 358 KB

english, 1990

59

Use of type II (end of range) damage as ‘‘detectors’’ for quantifying interstitial fluxes in ion-implanted silicon

Listebarger, J. K., Jones, K. S., Slinkman, J. A.

Journal:

Journal of Applied Physics

Year:

1993

Language:

english

File:

PDF, 1.01 MB

english, 1993

60

Quasiparticle Magnetospectroscopy in Superconductors: A Detailed Look at the Shape of the Penetration Layer

Doezema, R. E., Huffaker, J. N., Whitmore, S., Slinkman, J., Lawrence, W. E.

Journal:

Physical Review Letters

Year:

1984

Language:

english

File:

PDF, 655 KB

english, 1984

61

Mechanical Stress Characterization of Shallow Trench Isolation by Kelvin Probe Force Microscopy

Rueda, Hernan, Slinkman, James, Chidambarrao, Dureseti, Moszkowicz, Leon, Kaszuba, Phil, Law, Mark

Journal:

MRS Proceedings

Year:

1999

Language:

english

File:

PDF, 875 KB

english, 1999

62

Bargaining with a biased autocrat

Krainin, C., Slinkman, J.

Journal:

Journal of Theoretical Politics

Year:

2016

Language:

english

File:

PDF, 1.85 MB

english, 2016

63

SPIE Proceedings [SPIE Optical Science and Technology, the SPIE 49th Annual Meeting - Denver, CO (Monday 2 August 2004)] Quantum Communications and Quantum Imaging II - Accurate prediction and proposed method of measurement of the Casimir effect in silicon MOS devices

Slinkman, James A., Meyers, Ronald E., Shih, Yanhua

Year:

2004

Language:

english

File:

PDF, 189 KB

english, 2004

64

SPIE Proceedings [SPIE Microlithography 2004 - Santa Clara, CA (Sunday 22 February 2004)] Metrology, Inspection, and Process Control for Microlithography XVIII - Reducing measurement uncertainty drives the use of multiple technologies for supporting metrology

Banke, Jr., Bill, Silver, Richard M., Archie, Charles N., Sendelbach, Matthew, Robert, Jim, Slinkman, James A., Kaszuba, Phil, Kontra, Rick, DeVries, Mick, Solecky, Eric P.

Year:

2004

Language:

english

File:

PDF, 260 KB

english, 2004

65

Electrical current through individual pairs of phosphorus donor atoms and silicon dangling bonds

Ambal, K., Rahe, P., Payne, A., Slinkman, J., Williams, C. C., Boehme, C.

Journal:

Scientific Reports

Year:

2016

Language:

english

File:

PDF, 1.40 MB

english, 2016

66

Aeroelastic Design and LPV Modelling of an Experimental Wind Turbine Blade equipped with Free-floating Flaps

Navalkar, S. T., Bernhammer, L. O., Sodja, J., Slinkman, C. J., van Wingerden, J. W., van Kuik, G. A. M.

Journal:

Journal of Physics Conference Series

Year:

2016

Language:

english

File:

PDF, 1.98 MB

english, 2016

67

Political-Economic Cycles in the U.S. Stock Market

Herbst, Anthony F., Slinkman, Craig W.

Journal:

Financial Analysts Journal

Year:

1984

Language:

english

File:

PDF, 1.19 MB

english, 1984

68

[IEEE 2019 IEEE Power & Energy Society Innovative Smart Grid Technologies Conference (ISGT) - Washington, DC, USA (2019.2.18-2019.2.21)] 2019 IEEE Power & Energy Society Innovative Smart Grid Technologies Conference (ISGT) - Real-world, Full-scale Validation of Power Balancing Services from Packetized Virtual Batteries

Desrochers, Kate, Hines, Vanessa, Wallace, Forrest, Slinkman, John, Giroux, Andrew, Khurram, Adil, Amini, Mahraz, Almassalkhi, Mads, Hines, Paul D.H.

Year:

2019

Language:

english

File:

PDF, 409 KB

english, 2019

69

Imaging the native inversion layer under buried oxide in silicon-on-insulator radio frequency device technology via scanning surface photovoltage microscopy

Dahanayaka, Daminda H., Kaszuba, Philip V., Moszkowicz, Leon, Wells, Randall H., Alwine, Franklin J., Phelps, Richard A., Slinkman, James A., Wong, Andrew A., Bumm, Lloyd A.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2019

Language:

english

File:

PDF, 2.61 MB

english, 2019

70

Imaging the native inversion layer under buried oxide in silicon-on-insulator radio frequency device technology via scanning surface photovoltage microscopy

Dahanayaka, Daminda H., Kaszuba, Philip V., Moszkowicz, Leon, Wells, Randall H., Alwine, Franklin J., Phelps, Richard A., Slinkman, James A., Wong, Andrew A., Bumm, Lloyd A.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2019

File:

PDF, 2.61 MB

2019