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1

As/GaAs strained-layer superlattice

Kita, Takashi, Inazumi, Tomoko, Nakayama, Hiroshi, Nishino, Taneo, Sakaguchi, Harunori

Journal:

Physical Review B

Year:

1994

Language:

english

File:

PDF, 260 KB

english, 1994

2

Bandgap Energy of InGaAsP Quaternary Alloy

Yamazoe, Yoshimitsu, Nishino, Taneo, Hamakawa, Yoshihiro, Kariya, Tetsuya

Journal:

Japanese Journal of Applied Physics

Year:

1980

File:

PDF, 960 KB

1980

3

Tunneling Current Due to Thermionic-Field Emission in an Au–InS Schottky-Barrier Diode

Takarabe, Kenichi, Nishino, Taneo, Hamakawa, Yoshihiro

Journal:

Japanese Journal of Applied Physics

Year:

1979

Language:

english

File:

PDF, 212 KB

english, 1979

4

Indirect Exciton Absorption in Germanium

Nishino, Taneo, Takeda, Mitsugu, Hamakawa, Yoshihiro

Journal:

Journal of the Physical Society of Japan

Year:

1974

File:

PDF, 1.08 MB

1974

5

Editors' preface

Shigeo Fujita, Taneo Nishino, Tsunemasa Taguchi

Journal:

Journal of Crystal Growth

Year:

1992

Language:

english

File:

PDF, 127 KB

english, 1992

6

Atom correlation and configurational ordering in pseudobinary epitaxial semiconductors

Hiroshi Nakayama, Tohru Takeguchi, Taneo Nishino

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 581 KB

english, 1996

7

Kinetic Ising model of site-correlated adsorption and surface diffusion in molecular-beam epitaxy

Hiroshi Nakayama, Makoto Tochigi, Hidefumi Maeda, Taneo Nishino

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 745 KB

english, 1995

8

Selective growth of micro GaAs dots on Si by molecular beam epitaxy

Hidefumi Maeda, Satoshi Watatani, Hiroshi Nakayama, Taneo Nishino

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 540 KB

english, 1995

9

Optical anisotropy of orthorhombic InS

Kencichi Takarabe, Taneo Nishino

Journal:

Journal of Physics and Chemistry of Solids

Year:

1983

Language:

english

File:

PDF, 398 KB

english, 1983

10

Electroreflectance of p-type GaAs

Taneo Nishino, Masanori Okuyama, Yoshihiro Hamakawa

Journal:

Solid State Communications

Year:

1969

Language:

english

File:

PDF, 167 KB

english, 1969

11

Multiple shallow acceptor levels of rare-earth impurities in silicon

Hiroshi Nakayama, Masaki Khono, Taneo Nishino

Journal:

Solid State Communications

Year:

1995

Language:

english

File:

PDF, 210 KB

english, 1995

12

Interface stress at thin film semiconductor heterostructures

Journal:

Year:

1991

Language:

english

File:

PDF, 123 KB

english, 1991

13

Configurational atomic ordering caused by stochastic adsorption processes in MBE-grown alloy semiconductors

Hiroshi Nakayama, Makoto Tochigi, Hidefumi Maeda, Taneo Nishino

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 786 KB

english, 1994

14

Surface wave excitation Auger electron spectroscopy of Si(001) reconstructed surfaces

Hiroshi Nakayama, Taneo Nishino, Kazuyuki Ueda, Shiro Takeno, Hiroshi Fujita

Journal:

Ultramicroscopy

Year:

1991

Language:

english

File:

PDF, 944 KB

english, 1991

15

Stochastic growth theory of molecular beam epitaxy with atom correlation effects: A Monte-Carlo master equation method

Hiroshi Nakayama, Akihisa Furuichi, Takashi Kita, Taneo Nishino

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 744 KB

english, 1997

16

Effect of local atomic arrangement on Co-related luminescence in III–V alloy semiconductors

Taneo Nishino, Sho Shirakata, Yoshihiro Hamakawa

Journal:

Journal of Luminescence

Year:

1988

Language:

english

File:

PDF, 1015 KB

english, 1988

17

Electroreflectance polarization study of valence‐band states in ordered Ga0.5In0.5P

Kanata, Takashi, Nishimoto, Masahiko, Nakayama, Hiroshi, Nishino, Taneo

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 625 KB

english, 1993

18

Photocurrent anisotropy in compositional modulated superlattice of long-range ordered Ga0.5In0.5P

Takashi Kita, Akira Fujiwara, Hiroshi Nakayama, Taneo Nishino

Journal:

Journal of Electronic Materials

Year:

1996

Language:

english

File:

PDF, 481 KB

english, 1996

19

Growth dynamics and an order-disorder transition in epitaxial alloy semiconductors

Hiroshi Nakayama, Tohru Takeguchi, Taneo Nishino

Journal:

Surface Science

Year:

1996

Language:

english

File:

PDF, 568 KB

english, 1996

20

Electrical and Optical Properties of Si-SnO 2 Heterojunctions

Nishino, Taneo, Hamakawa, Yoshihiro

Journal:

Japanese Journal of Applied Physics

Year:

1970

File:

PDF, 736 KB

1970

21

Carrier Mobility and Dislocation Scattering in the Boundary Layer of Germanium Bicrystals

Hamakawa, Yoshihiro, Nishino, Taneo, Yamaguchi, Jiro

Journal:

Japanese Journal of Applied Physics

Year:

1963

File:

PDF, 153 KB

1963

22

Erratum: “The optical process in AlInP/GaInP/AlInP quantum wells” [J. Appl. Phys. 80, 4592 (1996)]

Ishitania, Yoshihiro, Minagawa, Shigekazu, Kita, Takashi, Nishino, Taneo, Yaguchi, Hiroyuki, Shiraki, Yasuhiro

Journal:

Journal of Applied Physics

Year:

1997

Language:

english

File:

PDF, 274 KB

english, 1997

23

Linear electrooptic effect in ordered (Al[sub 0.5]Ga[sub 0.5])[sub 0.5]In[sub 0.5]P

Yamashita, Kenichi, Kita, Takashi, Nishino, Taneo

Journal:

Journal of Applied Physics

Year:

1999

Language:

english

File:

PDF, 305 KB

english, 1999

24

Site-specific physisorption and chemical reaction of subphthalocyanine molecules on silicon(111)-

Yanagi, Hisao, Schlettwein, Derck, Nakayama, Hiroshi, Nishino, Taneo

Journal:

Physical Review B

Year:

2000

Language:

english

File:

PDF, 275 KB

english, 2000

25

Crystallinity of InGaPAs epitaxial layers revealed in equal thickness fringes in transmission electron microscopy

Kondow, Masahiko, Kakibayashi, Hiroshi, Nishino, Taneo, Hamakawa, Yoshihiro

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 741 KB

english, 1989

26

P by atomic ordering

Yamashita, Kenichi, Kita, Takashi, Nakayama, Hiroshi, Nishino, Taneo

Journal:

Physical Review B

Year:

1996

Language:

english

File:

PDF, 148 KB

english, 1996

27

Interface Stress at OMVPE-Grown ZnS x Se 1- x /GaAs:Cr Heterostructure

Tonami, Yoshiyuki, Nishino, Taneo, Hamakawa, Yoshihiro, Sakamoto, Takao, Fujita, Shigeo

Journal:

Japanese Journal of Applied Physics

Year:

1988

File:

PDF, 493 KB

1988

28

Interface Stress at ZnSe/GaAs:Cr Heterostructure

Fujiwara, Yasufumi, Shirakata, Sho, Nishino, Taneo, Hamakawa, Yoshihiro, Fujita, Shigeo

Journal:

Japanese Journal of Applied Physics

Year:

1986

File:

PDF, 896 KB

1986

29

P

Kita, Takashi, Yamashita, Kenichi, Nishino, Taneo

Journal:

Physical Review B

Year:

1996

Language:

english

File:

PDF, 129 KB

english, 1996

30

heterointerface

Kita, Takashi, Nishino, Taneo, Geng, C., Scholz, F., Schweizer, H.

Journal:

Physical Review B

Year:

1999

Language:

english

File:

PDF, 103 KB

english, 1999

31

P studied by temperature-dependent photoluminescence polarization

Kanata, Takashi, Nishimoto, Masahiko, Nakayama, Hiroshi, Nishino, Taneo

Journal:

Physical Review B

Year:

1992

Language:

english

File:

PDF, 363 KB

english, 1992

32

Influence of growth temperature on crystalline structure in Ga0.5In0.5P grown by organometallic vapor phase epitaxy

Kondow, Masahiko, Kakibayashi, Hiroshi, Minagawa, Shigekazu, Inoue, Youji, Nishino, Taneo, Hamakawa, Yoshihiro

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 599 KB

english, 1988

33

P

Yamashita, Kenichi, Kita, Takashi, Nakayama, Hiroshi, Nishino, Taneo

Journal:

Physical Review B

Year:

1997

Language:

english

File:

PDF, 125 KB

english, 1997

34

Photocurrent polarization in long-range ordered Ga0.5In0.5P

Kita, Takashi, Fujiwara, Akira, Nakayama, Hiroshi, Nishino, Taneo

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 275 KB

english, 1995

35

Effects of ambient gas on photo-acoustic displacement measurement by laser interferometric probe

Sumie, Shingo, Takamatsu, Hiroyuki, Nishimoto, Yoshiro, Kawata, Yutaka, Horiuchi, Takefumi, Nakayama, Hiroshi, Kanata, Takashi, Nishino, Taneo

Journal:

Journal of Applied Physics

Year:

1993

Language:

english

File:

PDF, 727 KB

english, 1993

36

Anomalous temperature dependence of the ordered Ga0.5In0.5P photoluminescence spectrum

Kondow, Masahiko, Minagawa, Shigekazu, Inoue, Youji, Nishino, Taneo, Hamakawa, Yoshihiro

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 476 KB

english, 1989

37

Carrier localization effects in energy up conversion at ordered (Al[sub 0.5]Ga[sub 0.5])[sub 0.5]In[sub 0.5]P/GaAs heterointerface

Yamashita, Kenichi, Kita, Takashi, Nishino, Taneo

Journal:

Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 354 KB

english, 1998

38

Analysis of lattice defects induced by ion implantation with photo-acoustic displacement measurements

Sumie, Shingo, Takamatsu, Hiroyuki, Morimoto, Tsutomu, Nishimoto, Yoshiro, Kawata, Yutaka, Horiuchi, Takefumi, Nakayama, Hiroshi, Kita, Takashi, Nishino, Taneo

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 1.29 MB

english, 1994

39

Influence of immiscibility in liquid-phase epitaxy growth of InGaPAs on GaAs

Kondo, Masahiko, Shirakata, Sho, Nishino, Taneo, Hamakawa, Yoshihiro

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 788 KB

english, 1986

40

Deep Impurity Levels in InP LEC Crystals

Yamazoe, Yoshimitsu, Sasai, Yoichi, Nishino, Taneo, Hamakawa, Yoshihiro

Journal:

Japanese Journal of Applied Physics

Year:

1981

File:

PDF, 879 KB

1981

41

Preparation and Properties of InGaAsP p - n Junction for Fabrication of Photodetectors in Optical Communication Systems

Yamazoe, Yoshimitsu, Sasai, Yoichi, Nishino, Taneo, Hamakawa, Yoshihiro

Journal:

Japanese Journal of Applied Physics

Year:

1980

File:

PDF, 673 KB

1980

42

Photoluminescence and Lattice Mismatch in InGaAs/InP

Yagi, Tetsuya, Fujiwara, Yasufumi, Nishino, Taneo, Hamakawa, Yoshihiro

Journal:

Japanese Journal of Applied Physics

Year:

1983

File:

PDF, 382 KB

1983

43

Deep-Level Luminescence in Ni-Diffused GaAs

Fujiwara, Yasufumi, Kojima, Atsushi, Nishino, Taneo, Hamakawa, Yoshihiro

Journal:

Japanese Journal of Applied Physics

Year:

1983

File:

PDF, 472 KB

1983

44

Cr-Related Intracenter Luminescence in GaAs: Cr

Fujiwara, Yasufumi, Nishino, Taneo, Hamakawa, Yoshihiro

Journal:

Japanese Journal of Applied Physics

Year:

1982

File:

PDF, 450 KB

1982

45

Deep-Level Luminescence of Cr-Doped GaAsP Alloys

Fujiwara, Yasufumi, Kojima, Atsushi, Nishino, Taneo, Hamakawa, Yoshihiro

Journal:

Japanese Journal of Applied Physics

Year:

1984

File:

PDF, 540 KB

1984

46

In-Depth Profile Measurements of Cr-Related Luminescence Lines in GaAs

Fujiwara, Yasufumi, Kojima, Atsushi, Nishino, Taneo, Hamakawa, Yoshihiro

Journal:

Japanese Journal of Applied Physics

Year:

1985

File:

PDF, 780 KB

1985

47

Electroreflectance and Photoluminescence Studies of In 1- x Ga x P 1- y As y Lattice-Matched to GaAs

Shirakata, Sho, Kondo, Masahiko, Nishino, Taneo, Hamakawa, Yoshihiro

Journal:

Japanese Journal of Applied Physics

Year:

1986

File:

PDF, 853 KB

1986

48

Effects of In Doping on Cr-Related Luminescence in GaAs

Fujiwara, Yasufumi, Kita, Yasushi, Tonami, Yoshiyuki, Nishino, Taneo, Hamakawa, Yoshihiro

Journal:

Japanese Journal of Applied Physics

Year:

1986

File:

PDF, 423 KB

1986

49

Site-Correlated-Adsorption Induced Atomic Ordering in Heteroepitaxial Alloy Semiconductors

Nakayama, Hiroshi, Tochigi, Makoto, Nishino, Taneo

Journal:

Japanese Journal of Applied Physics

Year:

1993

File:

PDF, 943 KB

1993

50

A New Method of Photothermal Displacement Measurement by Laser Interferometric Probe -Its Mechanism and Applications to Evaluation of Lattice Damage in Semiconductors

Sumie, Shingo, Takamatsu, Hiroyuki, Nishimoto, Yoshiro, Horiuchi, Takefumi, Nakayama, Hiroshi, Kanata, Takashi, Nishino, Taneo

Journal:

Japanese Journal of Applied Physics

Year:

1992

File:

PDF, 1.36 MB

1992