Volume 236; Issue 1-3

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Journal of Crystal Growth
Volume 236; Issue 1-3

Journal of Crystal Growth

Volume 236; Issue 1-3

1

Growth and characterization of a new nonlinear optical mixed borate crystal

S. Ishwar Bhat, P. Mohan Rao, V. Upadyaya, H.S. Nagaraja

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 158 KB

english, 2002

2

Dendritic morphologies of directionally solidified single crystals along different crystallographic orientations

G.L Ding, S.N Tewari

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 519 KB

english, 2002

3

The variation of the equilibrium of chemical reactions in the process of (Bi2Te3)(Sb2Te3)(Sb2Se3) crystal growth

O.B Sokolov, S.Ya Skipidarov, N.I Duvankov

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 169 KB

english, 2002

4

Growth of diamond films on grooved Si substrates

Hirofumi Yamamoto, Yoshiki Naoi, Yoshihiro Shintani

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 268 KB

english, 2002

5

Controlling factors and mechanism of reactive crystallization of calcium carbonate polymorphs from calcium hydroxide suspensions

Mitsutaka Kitamura, Haruo Konno, Atsunari Yasui, Hirokatsu Masuoka

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 401 KB

english, 2002

6

Observation of zincblend phase in InN thin films grown on sapphire by nitrogen plasma-assisted pulsed laser deposition

P Bhattacharya, T.K Sharma, S Singh, A Ingale, L.M Kukreja

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 241 KB

english, 2002

7

The growth and absorption characterization of Cr, Ca:YAG by liquid-phase epitaxy

Rao Haibo, Cheng Jianbo, Huang Zonglin, Gao Tao, Gong Huarong

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 121 KB

english, 2002

8

SiGe growth kinetics and doping in reduced pressure-chemical vapor deposition

J.M Hartmann, V Loup, G Rolland, P Holliger, F Laugier, C Vannuffel, M.N Séméria

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 358 KB

english, 2002

9

Temperature reduction of θ- to α-phase transformation induced by high-pressure pretreatments of nano-sized alumina powders derived from boehmite

F.S. Yen, M.Y. Wang, J.L. Chang

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 531 KB

english, 2002

10

The growth, morphology and perfection of fluoranthene crystals grown from supercooled chlorine derivative solutions on spontaneously formed seeds

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 284 KB

english, 2002

11

Density and ultrasonic velocity of undersaturated and supersaturated solutions of fluoranthene in trichloroethylene, and study of their metastable zone width

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 340 KB

english, 2002

12

Organometallic vapor phase epitaxy of GaN on Si(1 1 1) with a γ-Al2O3(1 1 1) epitaxial intermediate layer

Akihiro Wakahara, Hiroshi Oishi, Hiroshi Okada, Akira Yoshida, Yoshiaki Koji, Makoto Ishida

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 211 KB

english, 2002

13

Crystal growth and characterization of new high Curie temperature (1−x)BiScO3–xPbTiO3 single crystals

Shujun Zhang, Laurent Lebrun, Sorah Rhee, Richard E Eitel, Clive A Randall, Thomas R Shrout

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 277 KB

english, 2002

14

Growth of nonlinear optical γ-glycine crystals

M.Narayan Bhat, S.M Dharmaprakash

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 134 KB

english, 2002

15

Elaboration of Bi2Se3 by metalorganic chemical vapour deposition

A. Giani, A. Al Bayaz, A. Foucaran, F. Pascal-Delannoy, A. Boyer

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 128 KB

english, 2002

16

Low-temperature growth conditions of YBa2Cu3O7−δ using Ba–Cu–Ag–O–F solvent

Yasuji Yamada, Toshihiro Suga, Izumi Hirabayashi

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 146 KB

english, 2002

17

Hybrid model simulation of the cluster deposition process

Kenta Hongo, Hiroshi Mizuseki, Yoshiyuki Kawazoe, Luc T Wille

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 91 KB

english, 2002

18

Ab initio study of silicon etching by atomic hydrogen: influences of germanium and carbon impurities

Yoshiko S Hiraoka

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 124 KB

english, 2002

19

In situ monitoring of growth of ice from supercooled water by a new electromagnetic method

A.A. Shibkov, Yu.I. Golovin, M.A. Zheltov, A.A. Korolev, A.A. Leonov

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 192 KB

english, 2002

20

Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample

M.J da Silva, A.A Quivy, P.P González-Borrero, E Marega Jr.

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 272 KB

english, 2002

21

Morphology and dielectric properties of Ba0.5Sr0.5TiO3 thin films on annealed (1 0 0) MgO

E.J Cukauskas, Steven W Kirchoefer, W Chang

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 184 KB

english, 2002

22

Corrigendum to “Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots”: [J. Crystal Growth 234 (2001) 354–358]

R Jia, D.S Jiang, H.Y Liu, Y.Q Wei, B Xu, Z.G Wang

Journal:

Journal of Crystal Growth

Year:

2002

File:

PDF, 36 KB

2002

23

Epitaxial growth of SiC in a chimney CVD reactor

A Ellison, J Zhang, A Henry, E Janzén

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 267 KB

english, 2002

24

Solvothermal growth of vaterite in the presence of ethylene glycol, 1,2-propanediol and glycerin

Qing Li, Yi Ding, Fanqing Li, Bo Xie, Yitai Qian

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 190 KB

english, 2002

25

Epitaxial growth of InGaAs on misoriented GaAs(1 0 0) substrate by metal-organic vapor phase epitaxy

Y Takano, M Masuda, K Kobayashi, K Kuwahara, S Fuke, S Shirakata

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 145 KB

english, 2002

26

Fabrication of lead zirconate titanate thin films using a diffusion process of lead zirconate and lead titanate multilayer films

Takashi Iijima, Gang He, Hiroshi Funakubo

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 194 KB

english, 2002

27

Growth of CuInS2 crystals by a hot-press method

Hironori Komaki, Kenji Yoshino, Satoru Seto, Minoru Yoneta, Youji Akaki, Tetsuo Ikari

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 121 KB

english, 2002

28

Crystal growth of AgIn1−XGaXSe2 crystals grown by a vertical gradient freeze method

Kenji Yoshino, Hironori Komaki, Kousuke Itani, Shigefusa F Chichibu, Youji Akaki, Tetsuo Ikari

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 91 KB

english, 2002

29

Formation of epitaxially ordered SiO2 in oxygen-implanted silicon during thermal annealing

Takayoshi Shimura, Takuji Hosoi, Kazunori Fukuda, Masataka Umeno, Atsushi Ogura

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 136 KB

english, 2002

30

Nitrogen effect on grown-in defects in Czochralski silicon crystals

Shigeru Umeno, Toshiaki Ono, Tadami Tanaka, Eiichi Asayama, Hideshi Nishikawa, Masataka Hourai, Hisashi Katahama, Masakazu Sano

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 106 KB

english, 2002

31

High temperature growth of InN on GaP(1 1 1)B substrate using a new two-step growth method

Ashraful G Bhuiyan, A Yamamoto, A Hashimoto, Y Ito

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 237 KB

english, 2002

32

In-situ HRTEM observation of the melting-crystallization process of silicon

H Nishizawa, F Hori, R Oshima

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 514 KB

english, 2002

33

Pre-treatment of GaN template for homoepitaxial growth by radio-frequency molecular beam epitaxy

Shuichi Kubo, Yasunari Nanba, Tomokazu Okazaki, Shigeki Manabe, Satoshi Kurai, Tsunemasa Taguchi

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 191 KB

english, 2002

34

Sol–gel preparation of Ge nanocrystals embedded in SiO2 glasses

Heqing Yang, Xingjun Wang, Huazhong Shi, Fujian Wang, Xiaoxiao Gu, Xi Yao

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 135 KB

english, 2002

35

Very low-pressure VLP-CVD growth of high quality γ-Al2O3 films on silicon by multi-step process

Liwen Tan, Yude Zan, Jun Wang, Qiyuan Wang, Yuanhuan Yu, Shurui Wang, Zhongli Liu, Lanying Lin

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 167 KB

english, 2002

36

Nanodiamond formation by hot-filament chemical vapor deposition on carbon ions bombarded Si

M.Y Liao, X.M Meng, X.T Zhou, J.Q Hu, Z.G Wang

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 440 KB

english, 2002

37

Regular arrays of GaN nanorods

Z.J Li, X.L Chen, H.J Li, Y.P Xu

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 406 KB

english, 2002

38

Investigation of GaN layer grown on Si(1 1 1) substrate using an ultrathin AlN wetting layer

Yuan Lu, Xianglin Liu, Da-Cheng Lu, Hairong Yuan, Zhen Chen, Tiwen Fan, Yufeng Li, Peide Han, Xiaohui Wang, Du Wang, Zhanguo Wang

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 278 KB

english, 2002

39

The effect of aminoacids on the crystal growth of calcium carbonate

F Manoli, J Kanakis, P Malkaj, E Dalas

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 209 KB

english, 2002

40

Effects of As pressure on optical features of low-temperature grown GaAs/AlGaAs multiple quantum wells

Y.J Han, L.W Guo, C.L Bao, Q Huang, J.M Zhou

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 113 KB

english, 2002

41

Effect of borax on the crystallization kinetics of boric acid

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 172 KB

english, 2002

42

In-situ monitoring system of the position and temperature at the crystal–solution interface

Gen Sazaki, Yukinaga Azuma, Satoru Miyashita, Noritaka Usami, Toru Ujihara, Kozo Fujiwara, Yoshihiro Murakami, Kazuo Nakajima

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 344 KB

english, 2002

43

Crystallization kinetics of epsomite influenced by pH-value and impurities

Sattar Al-Jibbouri, Christine Strege, Joachim Ulrich

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 131 KB

english, 2002

44

Development of a thermal stress analysis system for anisotropic single crystal growth

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 294 KB

english, 2002

45

Behaviors of trace amounts of metal-fluoride impurities in CaF2 single-crystal grown by Stockbarger's method

Tetsuo Yonezawa, Kentaro Matsuo, Hideo Tamada, Yoji Kawamoto

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 308 KB

english, 2002

46

Jan Czochralski—father of the Czochralski method

Paweł E. Tomaszewski

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 78 KB

english, 2002

47

Rapid relaxation of crystallographic anisotropy in SiO2-removed lateral epitaxial overgrown GaN layers

Min Hong Kim, Yoonho Choi, Jae Hyung Yi, Min Yang, Jina Jeon, Seongwon Khym, Shi-Jong Leem

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 122 KB

english, 2002

48

Nitrogen doping of epitaxial silicon carbide

U Forsberg, Ö Danielsson, A Henry, M.K Linnarsson, E Janzén

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 204 KB

english, 2002

49

Growth and characterization of NMBA (4-nitro-4′-methyl benzylidene aniline) single crystals

K. Srinivasan, R. Biravaganesh, R. Gandhimathi, P. Ramasamy

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 263 KB

english, 2002

50

Effects of thermal convection of NH3 during growth of GaN epitaxial layers by horizontal MOCVD reactor

Dae-Kyu Choi, Chang-Yup Lee, Cheul-Ro Lee

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 180 KB

english, 2002

51

Growth of semicarbazone of benzophenone single crystals

N Vijayan, R Ramesh Babu, R Gopalakrishnan, S Dhanuskodi, P Ramasamy

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 146 KB

english, 2002

52

Alloy composition dependence in selective area epitaxy on InP substrates

Jonathan E Greenspan

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 176 KB

english, 2002

53

Growth of α-BaB2O4 single crystals from melts at various compositions: comparison of optical properties

V.P Solntsev, E.G Tsvetkov, V.A Gets, V.D Antsygin

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 137 KB

english, 2002

54

Crystal structural control on surface topology and crystal morphology of normal spinel (MgAl2O4)

R. Dekkers, C.F. Woensdregt

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 505 KB

english, 2002

55

Initial growth of hexagonal GaN grown on an Si(1 1 1) substrate coated with an ultra-thin SiC buffer layer

D Wang, S Yoshida, M Ichikawa

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 373 KB

english, 2002

56

Control of hillock formation during MOVPE growth of HgCdTe by suppressing the pre-reaction of the Cd precursor with Hg

Sang-Hee Suh, Jin-Sang Kim, Hyung Joon Kim, Jong-Hyeong Song

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 330 KB

english, 2002

57

InGaP lattice-mismatched LPE growth on GaAs substrates by epitaxial lateral overgrowth technique

S Nakayama, M Kaneko, S Aizawa, K Kashiwa, N.S Takahashi

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 216 KB

english, 2002

58

Synthesis and characterisation of boron carbide whiskers and thin elongated platelets

Mats Carlsson, Francisco Javier Garcı́a-Garcı́a, Mats Johnsson

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 469 KB

english, 2002

59

Nucleation behavior of silicon carbide whiskers grown by chemical vapor deposition

Ing-Chi Leu, Min-Hsiung Hon

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 113 KB

english, 2002

60

Step-bunching in SiC epitaxy: anisotropy and influence of growth temperature

M Syväjärvi, R Yakimova, E Janzén

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 243 KB

english, 2002

61

Influence of lattice mismatch on hydrogen incorporation into C-doped In0.53Ga0.47As grown by metalorganic chemical vapor deposition

Noriyuki Watanabe, Takashi Kobayashi

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 69 KB

english, 2002

62

Single-crystal growth of the Al–Cu–Ru icosahedral quasicrystal from the ternary melt

J.Q Guo, H Hasegawa, A.P Tsai, S Takeuchi

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 292 KB

english, 2002

63

Single crystals of Tb0.3Dy0.7Fe2 grown by Czochralski method with cold crucible

Jing-lan Chen, Shu-xia Gao, Wen-hong Wang, Ming Zhang, Guang-heng Wu, Yang-xian Li, Jing-ping Qu, Gui-zhi Xu

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 443 KB

english, 2002

64

Nanofabrication of grid-patterned substrate by holographic lithography

C.J Huang, X.P Zhu, C Li, Y.H Zuo, B.W Cheng, D.Z Li, L.P Luo, J.Z Yu, Q.M Wang

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 169 KB

english, 2002

65

Modeling of free dendritic growth of succinonitrile–acetone alloys with thermosolutal melt convection

Q. Li, C. Beckermann

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 297 KB

english, 2002

66

InAs/GaAs(1 0 0) self-assembled quantum dots: arsenic pressure and capping effects

B.J Riel, K Hinzer, S Moisa, J Fraser, P Finnie, P Piercy, S Fafard, Z.R Wasilewski

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 166 KB

english, 2002

67

Surface morphology of homoepitaxial GaSb films grown on flat and vicinal substrates

B.Z Nosho, B.R Bennett, E.H Aifer, M Goldenberg

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 394 KB

english, 2002

68

Preparation and photoluminescence characterization of high-purity CdTe single crystals: purification effect of normal freezing on tellurium and cadmium telluride

S.H Song, J Wang, M Isshiki

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 117 KB

english, 2002

69

Filler: SD0971

Journal:

Journal of Crystal Growth

Year:

2002

File:

PDF, 2.42 MB

2002

70

Effect of excessive amount of Cd(II) cations on surface morphology of prismatic {1 1 0} faces of cadmium mercury thiocyanate crystals

X.N Jiang, D Xu, D.R Yuan, D.L Sun, M.K Lu

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 231 KB

english, 2002

71

The determination of solute distribution during growth and dissolution of NaClO3 crystals: the growth of large crystals

W.C Chen, D.D Liu, W.Y Ma, A.Y Xie, J Fang

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 329 KB

english, 2002