Volume 44; Issue 1-3

Materials Science and Engineering: B

Volume 44; Issue 1-3

1

Growth and properties of CdS thin films deposited from aqueous solutions, using different cadmium salts

L. Pintilie, E. Pentia, I. Pintilie, D. Petre

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 416 KB

english, 1997

2

Enhancement of the photoconductive properties of PbS films deposited on ferroelectric substrates

I. Pintilie, L. Pintilie, E. Pentia, D. Petre

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 437 KB

english, 1997

3

Growth and properties of single crystalline GaN substrates and homoepitaxial layers

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 856 KB

english, 1997

4

Characterisation of InP and GaInAsP layers prepared by liquid-phase epitaxy using holmium doping and gettering

O. Procházková, J. Oswald, J. Zavadil, F. Šrobár, J. Novotny

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 417 KB

english, 1997

5

Evaluation of the properties of hydrogenated InP/InGaAsP double heterostructure waveguides

E.V.K. Rao, M. Allovon, Y. Rafle, M. Juhel, H. Thibierge, B. Theys, J. Chevallier

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 454 KB

english, 1997

6

Periodic gain structures for vertical cavity surface emitting lasers

S. Rapp, K. Streubel

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 258 KB

english, 1997

7

Crystalline perfection in GaInAsP/GaAs laser structures with GaInP or AlGaAs cladding layers

I. Rechenberg, A. Knauer, F. Bugge, U. Richter, G. Erbert, K. Vogel, A. Klein, U. Zeimer, M. Weyers

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 610 KB

english, 1997

8

The effect of base-emitter space-charge recombination on the temperature dependence of current gains in InGaP/GaAs and AlGaAs/GaAs HBTs

A.A. Rezazadeh, D.E. Kren, M.A. Crouch

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 469 KB

english, 1997

9

Hydrogen in carbon-doped GaAs base layer of GaInP/GaAs heterojunction bipolar transistors

E. Richter, P. Kurpas, M. Sato, M. Trapp, U. Zeimer, S. Hähle, M. Weyers

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 427 KB

english, 1997

10

Structural study of AlGaAs/InGaAs superlattices grown by MBE on (111)B GaAs substrates

T.C. Rojas, S.I. Molina, M.J. Romero, A. Sacedón, E. Calleja, R. García

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 581 KB

english, 1997

11

EBIC mode characterization of transport properties on laser heterostructures

M.J. Romero, D. Araújo, J.D. Lambkin, R. García

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 400 KB

english, 1997

12

Rapid thermal annealing of n-(Cd, Hg)Te crystals

V.G. Savitsky, P.E. Storchun

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 399 KB

english, 1997

13

High-resolution resistivity mapping of bulk semi-insulating GaAs by point-contact technique

W. Siegel, G. Kühnel, C. Reichel, M. Jurisch, B. Hoffmann

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 503 KB

english, 1997

14

Ellipsometry as a powerful tool for the control of epitaxial semiconductor structures in-situ and ex-situ

K.K. Svitashev, V.A. Shvets, A.S. Mardezhov, S.A. Dvoretsky, Yu.G. Sidorov, N.N. Mikhailov, E.V. Spesivtsev, S.V. Rychlitsky

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 404 KB

english, 1997

15

The evaluation and control of quantum wells and superlattices of III–V narrow gap semiconductors

R.A. Stradling, S.J. Chung, C.M. Ciesla, C.J.M. Langerak, Y.B. Li, T.A. Malik, B.N. Murdin, A.G. Norman, C.C. Phillips, C.R. Pidgeon, M.J. Pullin, P.J.P. Tang, W.T. Yuen

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 631 KB

english, 1997

16

Fabrication of InP/air-gap distributed Bragg reflectors and micro-cavities

K. Streubel, S. Rapp, J. André, N. Chitica

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 416 KB

english, 1997

17

Critical issues of III–V compound semiconductor processing

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 659 KB

english, 1997

18

Defect inspection of wafers by laser scattering

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 586 KB

english, 1997

19

Critical material and processing issues of SiC electronic devices

James A. Cooper Jr.

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 591 KB

english, 1997

20

Investigations of structural defects by etching of GaSb grown by the liquid-encapsulated Czochralski technique

E.M. Costa, B.A. Dedavid, A. Müller

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 892 KB

english, 1997

21

Optical and electro-optical investigation of low-temperature grown GaAs

S.U. Dankowski, P. Kiesel, M. Ruff, D. Streb, S. Tautz, U.D. Keil, C.B. Sørensen, B. Knüpfer, M. Kneissl, G.H. Döhler

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 386 KB

english, 1997

22

Effects of segregation on the optical properties of (In,Ga)As/GaAs quantum wells grown by MBE under various conditions

P. Disseix, J. Leymarie, A. Vasson, A.-M. Vasson, C. Monier, N. Grandjean, M. Leroux, J. Massies

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 452 KB

english, 1997

23

Monte Carlo simulation of the effect of interstitial atoms interaction on the heteroepitaxial growth of compound semiconductors

M. Djafari Rouhani, R. Malek, A.M. Gué, G. Bouyssou, D. Estève

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 458 KB

english, 1997

24

Scanning probe microscopy of GaAs/AlGaAs superlattices

V.A. Fedirko, M.D. Eremtchenko

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 365 KB

english, 1997

25

Homogeneity of thermally annealed Fe-doped InP wafers

R. Fornari, E. Gilioli, A. Sentiri, G. Mignoni, M. Avella, J. Jiménez, A. Alvárez, M.A. González

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 578 KB

english, 1997

26

Defect characterization in InP substrates implanted with 2 MeV Fe ions

C. Frigeri, A. Carnera, B. Fraboni, A. Gasparotto, A. Cassa, F. Priolo, A. Camporese, G. Rossetto

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 682 KB

english, 1997

27

Compositional inhomogeneity and strain relaxation in InGaAs SQWs MOVPE-grown on tilted GaAs substrates

C. Frigeri, A. Brinciotti, A. Di Paola, D.M. Ritchie, F. Longo, F. Vidimari

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 701 KB

english, 1997

28

Beryllium diffusion in short-period AlxGa1 − xAs/AlAs-superlattices and vertically compact laser structures grown by molecular beam epitaxy

A. Gaymann, M. Maier, W. Bronner, N. Grün, K. Köhler

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 382 KB

english, 1997

29

Investigation of the GaAs/Si heterojunction band lineup with capacitance and current versus voltage measurements

A. Georgakilas, E. Aperathitis, V. Foukaraki, M. Kayambaki, P. Panayotatos

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 391 KB

english, 1997

30

Advantages of thin interfaces in step-graded buffer structures

D. González, D. Araújo, L. González, Y. González, G. Aragón, R. García

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 730 KB

english, 1997

31

Silicon substrate optimization for microwave applications of GaAs/Si MESFETs

C. Papavassiliou, A. Georgakilas, E. Aperathitis, H. Krasny, E. Löchtermann, P. Panayotatos

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 389 KB

english, 1997

32

Nondestructive and contactless microwave methods for profiling the mobility in active layers of multilayer structures grown on semiinsulating substrates

I.A. Panaev, V.Ya. Prinz

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 352 KB

english, 1997

33

Method for the characterization of electron, light- and heavy-hole concentrations and mobilities in narrow-gap p-type HgCdTe

N.K. Talipov, V.N. Ovsyuk, V.G. Remesnik, V.V. Schaschkin

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 422 KB

english, 1997

34

The relationship between the resistivity of semi-insulating GaAs and MESFET properties

Carla Miner, J. Zorzi, S. Campbell, M. Young, K. Ozard, K. Borg

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 553 KB

english, 1997

35

Fundamental issues of device-relevant low temperature GaAs and related materials properties

Mohamed Missous

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 797 KB

english, 1997

36

Preparation and test of special surfaces for epi-ready InP wafers

B. Molinas, M. Favaretto, L. Meregalli, A. Passaseo, L. Mirenghi, G. Rossetto, M. Natali, G. Torzo

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 347 KB

english, 1997

37

Influence of preparation procedure on the characteristics of Schottky barriers fabricated in situ on MBE GaSb

R. Mosca, E. Gombia, A. Motta, A. Bosacchi, S. Franchi, C. Beneventi, C. Ghezzi, R. Magnanini

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 384 KB

english, 1997

38

Micropipes and polytypism as a source of lateral inhomogeneities in SiC substrates

S.G. Müller, R. Eckstein, D. Hofmann, E. Schmitt, W. Schoierer, A. Winnacker, W. Dorsch, H.P. Strunk

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 509 KB

english, 1997

39

Metrological, electrical and thermal analysis of semiconductor structures using scanning force microscopy

B. Müller-Zülow, M. Maywald, R.M. Cramer, J. Sprengepiel, S. Gehring

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 409 KB

english, 1997

40

Characterization of low-temperature GaAs by galvanomagnetic an photoluminescence measurements

J. Novák, M. Kučera, M. Morvic, J. Betko, A. Förster, P. Kordoš

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 410 KB

english, 1997

41

Room temperature scanning photoluminescence for mapping the lifetime and the doping density in epitaxial layers

M.F. Nuban, S.K. Krawczyk, M. Bejar

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 521 KB

english, 1997

42

Assessment of compensation ratio in high-purity GaAs using photoluminescence

G. Oelgart, S. Grämlich, T. Bergunde, E. Richter, M. Weyers

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 429 KB

english, 1997

43

Interdiffusion in InGaAs/GaAs and InGaAs/GaAsP quantum wells

A. Oster, F. Bugge, S. Gramlich, M. Procop, U. Zeimer, M. Weyers

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 382 KB

english, 1997

44

Influence of n-GaAs/i-AlGaAs heterostructure interfaces on the electrical properties of the n-GaAs channel layer

Y. Otoki, M. Sahara, H. Nagai, H. Sakaguchi, S. Takahashi, S. Kuma

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 449 KB

english, 1997

45

Defect processes causing free carrier variations around dislocations in n-type doped GaAs

O. Paetzold, K. Sonnenberg, G. Irmer

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 328 KB

english, 1997

46

Electrical activation of boron implanted in p-HgCdTe (x = 0.22) by low-temperature annealing under an anodic oxide

N.Kh. Talipov, V.N. Ovsyuk, V.G. Remesnik, V.V. Vasilyev

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 383 KB

english, 1997

47

Study of phonons in semiconductor superlattices by Raman scattering spectroscopy and microscopic model calculation

D.N. Talwar, B. Roughani, J.G. Pellegrino, P. Amirtharaj, S.B. Qadri

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 459 KB

english, 1997

48

Material and process related limitations of InP HEMT performance

M. Van Hove, J. Finders, K. van der Zanden, W. De Raedt, M. Van Rossum, Y. Baeyens, D. Schreurs, R. Menozzi

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 533 KB

english, 1997

49

Characterization of molecular beam epitaxy p-CdxHg1 − xTe layers using the photoconductive effect in crossed fields

S.A. Studenikin, D.Yu. Protasov, V.Ya. Kostyuchenko, V.S. Varavin

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 322 KB

english, 1997

50

Real-time monitoring and control during MBE growth of GaAs/AlGaAs Bragg reflectors using multi-wavelength ellipsometry

Blaine Johs, Craig Herzinger, Ping He, Shakil Pittal, John Woollam, Thomas Wagner

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 475 KB

english, 1997

51

Comparative study of microdefects in dislocation-free, heavily Si doped VB GaAs by DSL etching, NIR phase contrast microscopy, TEM and X-ray diffuse scattering

J.L. Weyher, K. Sonnenberg, T. Schober, A. Rucki, W. Jäger, P. Franzosi, C. Frigeri

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 688 KB

english, 1997

52

Determination of auger-sensitivity-factors in Zn1 − xMgxTe for quantitaitve surface analysis

E. Wirthl, H. Sitter, P. Bauer

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 293 KB

english, 1997

53

III-Nitride multiwafer MOCVD systems for blue-green LED material

E. Woelk, G. Strauch, D. Schmitz, M. Deschler, H. Jürgensen

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 365 KB

english, 1997

54

MBE-grown heavily Sm-doped ZnTe studied by optical spectroscopy

D. Wrack, R. Boyn, L. Parthier, T. Buhrow, F. Henneberger

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 444 KB

english, 1997

55

Optical and structural properties of anodized AlxGa1 − xAs layers

X.B. Xiang, X.B. Liao, S.L. Chang, W.H. Du

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 335 KB

english, 1997

56

Electrical evaluation of InP surface damage by reactive ion etching using mixture of ethane (C2H6) and hydrogen (H2)

N. Yamamoto, K. Kishi, S. Matsumoto, R. Iga, H. Okamoto, H. Mawatari

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 412 KB

english, 1997

57

Non-contacting spatially resolved measurements of Fermi energy and photoconductivity in semi-insulating undoped GaAs and InP:Fe

S.M. Young, M.R. Brozel, C.J.L. Moore

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 469 KB

english, 1997

58

Hg1 − xCdxTe/Cd1 − yZnyTe characterization: from basic studies to on-line methods

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 1.00 MB

english, 1997

59

The role of N2 and H2 as carrier gas on the selective area MOVPE of InP-based heterostructures using TBAs and TBP as group-V sources

G. Zimmermann, A. Ougazzaden, A. Gloukhian, E.V.K. Rao, D. Delprat, A. Ramdane, A. Mircea

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 566 KB

english, 1997

60

Influence of some n-type InSb properties on the main parameters of infrared photoconductive detectors

C.E.A. Grigorescu, S.A. Manea, M.F. Lazarescu, T. Botila, I. Munteanu, T. Necsoiu

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 359 KB

english, 1997

61

Correlation of electrical anisotropies of HEMT devices with defect distribution and InGaAs well roughness

F. Peiró, J.C. Ferrer, A. Cornet, J.R. Morante, M. Beck, M.A. Py

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 562 KB

english, 1997

62

Scanning tunneling microscopy characterization of metalorganic chemical vapor deposition grown GaN

Joachim Horna, Dimitris Pavlidis, Yongjo Park, Hans L. Hartnagel

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 503 KB

english, 1997

63

Material and fabrication-related limitations to high-power operation of GaAs/AlGaAs and InGaAs/AlGaAs laser diodes

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 685 KB

english, 1997

64

Investigation of transient transport effects in semi-insulating GaAs caused by defect state change and their interaction

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 341 KB

english, 1997

65

Electron transport in low temperature grown GaAs

K. Khirouni, J. Nagle, J.C. Bourgoin

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 291 KB

english, 1997

66

Conversion mechanism of GaAs to GaAsP on GaP substrate

M. Kimura, Z. Qin, H. Udono, S. Dost, A. Tanaka, T. Sukegawa

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 387 KB

english, 1997

67

Mechanisms for implantation induced interdiffusion at In0.53Ga0.47As/In0.52Al0.48As heterointerfaces

Tadamasa Kimura, Masahiro Saito, Satoshi Tachi, Riichiro Saito, Michio Murata, Takeshi Kamiya

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 462 KB

english, 1997

68

Scanning capacitance microscopy applied to two-dimensional dopant profiling of semiconductors

Joseph J. Kopanski, Jay F. Marchiando, Jeremiah R. Lowney

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 617 KB

english, 1997

69

Rapid and high concentrated permeation of Ga into InSb

M. Kumagawa, H. Ohtsu, E. Hamakawa, T. Koyama, M. Masaki, K. Takahashi, V.G. Lifshits, Y. Hayakawa

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 375 KB

english, 1997

70

Electrical properties of n-GaAs epilayers, FET and HEMT structures grown on LT-GaAs by MBE

M. Lagadas, Z. Hatzopoulos, N. Kornilios, M. Androulidaki, A. Christou, P. Panayotatos

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 411 KB

english, 1997

71

Determination of interface composition in III-V heterojunction devices (HBT and RTD) with atomic resolution using STEM techniques

H. Lakner, C. Mendorf, B. Bollig, W. Prost, F.-J. Tegude

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 575 KB

english, 1997

72

Conduction band offset ratio of the (In,Ga)As/GaAs system and (In,Ga)As alloy properties

J. Leymarie, P. Disseix, M. Rezki, C. Monier, A. Vasson, A.-M. Vasson

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 375 KB

english, 1997

73

Investigation of growth temperature dependent GaInP ordering in different crystal planes using X-ray diffraction and photoluminescence

Q. Liu, W. Prost, F.J. Tegude

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 694 KB

english, 1997

74

Electrical and optical properties of semi-insulating GaN

D.C. Looka, D.C. Reynolds, R.L. Jones, W. Kim, Ö. Aktas, A. Botchkarev, A. Salvador, H. Morkoç

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 368 KB

english, 1997

75

Properties of silicon pulse doped InGaP layers grown by LP-MOCVD

L. Malacký, R. Kúdela, M. Morvic, J. Novák, H.-H. Wehmann

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 473 KB

english, 1997

76

Beryllium diffusion in InGaAs epitaxial layers: a point defect nonequilibrium model

J. Marcon, S. Koumetz, K. Ketata, M. Ketata, P. Launay

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 381 KB

english, 1997

77

Evaluating epitaxial growth stability

D.H. Christensen, J.R. Hill, R.K. Hickernell, K. Matney, M.S. Goorsky

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 436 KB

english, 1997

78

Uniform InAlAs/InP HFET fabricated using selective dry recess etching

M. Achouche, K. Naït-Zerrad, S. Biblemont, G. Post, A. Clei

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 489 KB

english, 1997

79

Evaluation of III–V multilayer transport parameters using quantitative mobility spectrum analysis

J. Antoszewski, J.M. Dell, L. Faraone, L.S. Tan, A. Raman, S.J. Chua, D.S. Holmes, J.R. Lindemuth, J.R. Meyer

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 462 KB

english, 1997

80

Surface morphology and Raman scattering in GaAs/InAs(111) heterostructures grown by MOVPE

G. Attolini, E. Chimenti, C. Pelosi, P.P. Lottici, R. Carles

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 477 KB

english, 1997

81

Local express scanning characterization of crystal parameters of a semiconductor surface and bulk simultaneously by means of second harmonic generation

V.V. Balanyuk, S.A. Dvoretsky, A.A. Fedorov, V.I. Liberman, S.L. Musher, A.M. Rubenchik, V.E. Ryabchenko, M.F. Stupak, V.S. Syskin

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 627 KB

english, 1997

82

Control of the n-type doping in AlxGa1 − xSb: DX-center behavior of the Te impurity

A. Baraldi, F. Colonna, G. Covucci, C. Ghezzi, R. Magnanini, A. Parisini, L. Tarricone, A. Bosacchi, S. Franchi

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 485 KB

english, 1997

83

Microwave method for the characterization of transport parameters of heterostructures and narrow gap semiconductor films

T.I. Baturina, P.A. Borodovski, S.A. Buldygin, S.A. Studenikin

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 445 KB

english, 1997

84

Cathodoluminescence characterization of a compound semiconductornative dielectric interface

N.N. Berchenko, I.I. Izhnin, V.P. Savchyn, J.M. Stakhira, A.V. Voitsekhovskii

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 387 KB

english, 1997

85

HgCdTe extended defects electrical activity characterization by variable magnetic field hall measurements

N.N. Berchenko, K.R. Kurbanov, A.Yu. Nikiforov, A.V. Korovin

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 483 KB

english, 1997

86

Assessment of SI GaAs particle detectors

K. Berwick, M.R. Brozel, C.M. Buttar, P. Sellin, S.M. Young

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 440 KB

english, 1997

87

Sulfidization of GaAs in alcoholic solutions: a method having an impact on efficiency and stability of passivation

Vasily N. Bessolov, Elena V. Konenkova, Mikhail V. Lebedev

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 342 KB

english, 1997

88

Sulfur passivation of InGaAs/AlGaAs SQW laser (977 nm) facets in alcohol-based solutions

Vasily N. Bessolov, Mikhail V. Lebedev, Yuri M. Shernyakov, Boris V. Tsarenkov

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 292 KB

english, 1997

89

Modelling intermixing of short period strained layer superlattices by means of X-ray diffraction analysis

A. Brennemann, W. Prost, Q. Liu, U. Auer, F.J. Tegude

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 369 KB

english, 1997

90

Computer controlled microwave transient photoconductivity for the nondestructive characterization of GaAs substrates

S.A. Buldygin, S.V. Golod, V.V. Preobrazhenskii, B.P. Semyagin, E.M. Skok, D.G. Tarlo

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 487 KB

english, 1997

91

Semi-insulating LEC GaAs sub strates with an improved macroscopic and mesoscopic homogeneity

M. Jurisch, T. Flade, B. Hoffmann, A. Köhler, J. Korb, U. Kretzer, Th. Reinhold, B. Weinert

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 491 KB

english, 1997

92

Device-relevant point defects in GaAs and InP

C. Corbel, C. LeBerre, K. Saarinen, P. Hautojarvi

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 795 KB

english, 1997

93

Preface

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 104 KB

english, 1997

94

Progress in the layer thickness determination of AlGaAs/GaAs heterostructures using selective etching and AFM imaging of the (110) cleavage planes

S. Müller, J.L. Weyher, R. Dian, W. Jantz

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 495 KB

english, 1997

95

Growth and properties of semi-insulating VGF-GaAs

E. Buhrig, C, Frank, C. Hannig, B. Hoffmann

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 555 KB

english, 1997

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