Volume 42

Main
Materials Science in Semiconductor Processing
Volume 42

Materials Science in Semiconductor Processing

Volume 42

1

Evaporated iron disulfide thin films with sulfurated annealing treatments

Santos-Cruz, D., Mayén-Hernández, S.A., de Moure-Flores, F., Arias-Cerón, J.S., Santos-Cruz, J.

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 3.01 MB

english, 2016

2

The effect of Fe3+-doped on structure and optical properties of mesoporous Al2O3/SiO2 composite

Ghasemifard, Mahdi, Fathi, Ehsan, Ghamari, Misagh

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 1.54 MB

english, 2016

3

Temperature dependent dielectric studies of Ni/n-GaP Schottky diodes by capacitance and conductance measurements

Shiwakoti, N., Bobby, A., Asokan, K., Antony, B.

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 777 KB

english, 2016

4

Sputtered WO3 films for water splitting applications

Valerini, D., Hernández, S., Di Benedetto, F., Russo, N., Saracco, G., Rizzo, A.

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 1.82 MB

english, 2016

5

An ab initio study of the structural, elastic, electronic, optical properties and phonons of the double perovskite oxides Sr2AlXO6 (X=Ta, Nb, V)

Ghebouli, B., Ghebouli, M.A., Choutri, H., Fatmi, M., Chihi, T., Louail, L., Bouhemadou, A., Bin-Omran, S., Khenata, R., Khachai, H.

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 1.61 MB

english, 2016

6

Post-synthesis treatment of silicon carbide nanowires obtained in combustion synthesis

Danelska, Anna, Gierlotka, Stanislaw, Stelmakh, Svetlana, Soszynski, Michal

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 3.80 MB

english, 2016

7

Structural and optical properties of Fe-doped SnS2 nanoflakes prepared by molten salt solid state reaction

Alqarni, Areej S., Yassin, O.A.

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 6.77 MB

english, 2016

8

Ellipsometric, XPS and FTIR study on SiCN films deposited by hot-wire chemical vapor deposition method

Rahman, Md. Momtazur, Hasan, Syed Kamrul

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 724 KB

english, 2016

9

Advanced nanostructured titania photoactive materials for sustainable H2 production

Centi, Gabriele, Passalacqua, Rosalba, Perathoner, Siglinda

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 1.32 MB

english, 2016

10

Nanostructured CdO thin films for water treatments

Millesi, Salvatrice, Schilirò, Matteo, Greco, Francesco, Crupi, Isodiana, Impellizzeri, Giuliana, Priolo, Francesco, Egdell, Russell G., Gulino, Antonino

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 838 KB

english, 2016

11

Double bubble secondary building units used as a structural motif for enhanced electron–hole separation in solids

Farrow, M.R., Catlow, C.R.A., Sokol, A.A., Woodley, S.M.

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 1.86 MB

english, 2016

12

Solar-active photocatalytic tandems. A compromise in the photocatalytic processes design

Duta, Anca, Enesca, Alexandru, Bogatu, Cristina, Gyorgy, Eniko

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 623 KB

english, 2016

13

Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon

Marqués, Luis A., Aboy, María, Ruiz, Manuel, Santos, Iván, López, Pedro, Pelaz, Lourdes

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 2.15 MB

english, 2016

14

Damage accumulation during cryogenic and room temperature implantations in strained SiGe alloys

Payet, Anthony, Luce, Flavia Piegas, Curfs, Caroline, Mathieu, Benoît, Sklénard, Benoît, Barbé, Jean-Charles, Batude, Perrine, Joblot, Sylvain, Tavernier, Clément, Colombeau, Benjamin, Guissi, Sofiene

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 352 KB

english, 2016

15

Effects of Si-doping on structural and electrical characteristics of polar, semi-polar, and non-polar AlGaN epi-layers

Wang, Yi, Zhang, Xiong, Luan, Huakai, Yang, Hongquan, Wang, Shuchang, Dai, Qian, Wu, Zili, Cui, Yiping

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 2.29 MB

english, 2016

16

Study of Al diffusion in GaN during metal organic vapor phase epitaxy of AlGaN/GaN and AlN/GaN structures

Chaaben, N., Laifi, J., Bouazizi, H., Saidi, C., Bchetnia, A., El Jani, B.

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 1.41 MB

english, 2016

17

Oxygen behavior in germanium during melting laser thermal annealing

Milazzo, R., Impellizzeri, G., Cuscunà, M., De Salvador, D., Mastromatteo, M., La Magna, A., Fortunato, G., Priolo, F., Privitera, V., Carnera, A., Napolitani, E.

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 372 KB

english, 2016

18

Characterization of cadmium sulfide/titania heterostructure films by utilizing microstructure and optical characteristics

Mohsin, Ali Kamel, Bidin, Noriah, Aadim, Kadhim A.

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 3.39 MB

english, 2016

19

Preparation optimization of ATO particles by robust parameter design

An, Qi, Bai, Genghua, Yang, Yang, Wang, Cui, Huang, Quehong, Liu, Chao, Chen, Shujun, Cao, Jun, Zheng, Sisi, Gu, Zhengui, Xiang, Bin

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 862 KB

english, 2016

20

Strain/composition interplay in thin SiGe layers on insulator processed by Ge condensation

Boureau, Victor, Benoit, Daniel, Warot, Bénédicte, Hÿtch, Martin, Claverie, Alain

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 1.68 MB

english, 2016

21

Material research on the InGaAs-emitting-layer VECSEL grown on GaAs substrate

Lin, Tao, Sun, Ruijuan, Sun, Hang, Guo, Enmin, Duan, Yupeng, Lin, Nan, Ma, Xiaoyu, Wang, Yonggang

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 627 KB

english, 2016

22

Activation and deactivation of phosphorus in silicon-on-insulator substrates

Chang, Ruey-Dar, Lin, Chih-Hung

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 611 KB

english, 2016

23

Editorial

Impellizzeri, Giuliana, Morrissey, Anne, Svensson, Bengt G.

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 165 KB

english, 2016

24

E-MRS Spring Meeting 2015 Symposium Z: Nanomaterials and processes for advanced semiconductor CMOS devices

Napolitani, Enrico, Duffy, Ray, Zographos, Nikolas, van Dal, Mark

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 170 KB

english, 2016

25

Strained c:Si0.55Ge0.45 with embedded e:Si0.75Ge0.25 S/D IFQW SiGe-pFET for DRAM periphery applications

Ritzenthaler, R., Schram, T., Witters, L., Mitard, J., Spessot, A., Caillat, C., Hellings, G., Eneman, G., Aoulaiche, M., Na, H.-J., Son, Y., Noh, K.B., Fazan, P., Lee, S.-G., Collaert, N., Mocuta, A.

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 1.09 MB

english, 2016