Volume 6; Issue 4

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Materials Science in Semiconductor Processing
Volume 6; Issue 4

Materials Science in Semiconductor Processing

Volume 6; Issue 4

1

Effects of heat treatment on electroless copper-deposited film in TaN diffusion barrier

Yong Sun Lee, Seok Woo Hong, Jong-Wan Park

Journal:

Materials Science in Semiconductor Processing

Year:

2003

Language:

english

File:

PDF, 419 KB

english, 2003

2

Annealing and activation of silicon implanted in semi-insulating InP substrates

H.W Dong, Y.W Zhao, J.M Li

Journal:

Materials Science in Semiconductor Processing

Year:

2003

Language:

english

File:

PDF, 119 KB

english, 2003

3

Epi-n-ZnO/〈100〉 Si, GaAs and InP by L-MBE: a novel approach for III–V devices

K. Ramamoorthy, C. Sanjeeviraja, M. Jayachandran, K. Sankaranarayanan, Pankaj Misra, L.M. Kukreja

Journal:

Materials Science in Semiconductor Processing

Year:

2003

Language:

english

File:

PDF, 153 KB

english, 2003

4

Seed layer corrosion of Damascene structures in copper sulfate electrolytes

Nicholas M. Martyak, Pierre Ricou

Journal:

Materials Science in Semiconductor Processing

Year:

2003

Language:

english

File:

PDF, 587 KB

english, 2003

5

Anisotropic etching of the silicon crystal-surface free energy model

Journal:

Materials Science in Semiconductor Processing

Year:

2003

Language:

english

File:

PDF, 565 KB

english, 2003

6

A calculation of diffusion parameters for Cu/Ta and Ta/Si interfaces in Cu/Ta/Si(1 1 1) structure

A.Z. Moshfegh, O. Akhavan

Journal:

Materials Science in Semiconductor Processing

Year:

2003

Language:

english

File:

PDF, 166 KB

english, 2003

7

The effect of variation of the WF6 flow rate on the contact resistance in the DCS-based WSix deposition

Yang Hee Joung, Kyoung Won Kim, Seong Jun Kang

Journal:

Materials Science in Semiconductor Processing

Year:

2003

Language:

english

File:

PDF, 359 KB

english, 2003

8

Texture of Cu and dilute binary Cu-alloy films: impact of annealing and solute content

K Barmak, A Gungor, A.D Rollett, C Cabral Jr., J.M.E Harper

Journal:

Materials Science in Semiconductor Processing

Year:

2003

Language:

english

File:

PDF, 510 KB

english, 2003

9

MOVPE growth of Si-doped GaAs and AlxGa1−xAs using tertiarybutylarsine (TBA) in pure N2 ambient

G.S. Huang, X.H. Tang, B.L. Zhang

Journal:

Materials Science in Semiconductor Processing

Year:

2003

Language:

english

File:

PDF, 109 KB

english, 2003

10

Patents Alert

Journal:

Materials Science in Semiconductor Processing

Year:

2003

Language:

english

File:

PDF, 65 KB

english, 2003

11

The effect of In doping on some physical properties of CdS films

F. Atay, V. Bilgin, I. Akyuz, S. Kose

Journal:

Materials Science in Semiconductor Processing

Year:

2003

Language:

english

File:

PDF, 342 KB

english, 2003

12

Zn distribution and location, luminescence measurement after Zn channeled implantation in GaN and RTA annealing

F.-R. Ding, A. Vantomme, W.-H. He, Q. Zhao, B. Pipeleers, K. Jacobs, I. Moerman, K. Iakoubovskii, G.J. Adriaenssens

Journal:

Materials Science in Semiconductor Processing

Year:

2003

Language:

english

File:

PDF, 114 KB

english, 2003

13

{3 1 1} Defect evolution in Si-implanted Si1−xGex alloys

Robert T. Crosby, Kevin S. Jones, Mark E. Law, A.Nylandsted Larsen, J.Lundsgaard Hansen

Journal:

Materials Science in Semiconductor Processing

Year:

2003

Language:

english

File:

PDF, 174 KB

english, 2003