Volume 56; Issue 1-2

Microelectronic Engineering

Volume 56; Issue 1-2
1

The 300 mm silicon wafer — a cost and technology challenge

Peter O. Hahn
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 1.10 MB
english, 2001
2

Production maturity of 64 M/256 M furnace and RTP processes on 300 mm wafers

W. Kürner
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 596 KB
english, 2001
8

Intrinsic gettering of 300 mm CZ wafers

F. Bialas, R. Winkler, H. Dietrich
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 542 KB
english, 2001
9

New materials for active and passive integrated devices for wireless applications

P Gill, M Miller, B.Y Nguyen
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 152 KB
english, 2001
10

Determination of electroless kinetic: a QCM study

A Zouhou, H Vergnes, P Duverneuil
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 63 KB
english, 2001
11

TiN barriers for high-k capacitors: simulations and experimental results

T. Theiler, N. Sacher, B. Froeschle
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 404 KB
english, 2001
15

European 300 mm metrology platform — MEDEA T618

J Trilhe, A Reader, L Kwakman
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 1013 KB
english, 2001
16

Evaluations of 300 mm Si wafer performances for giga ULSI device processes

Kenji Takahashi, Kenichi Kawashima
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 2.41 MB
english, 2001
19

The growth technology for 300 mm single crystal silicon

H Tu, Q Zhou, G Zhang, J Wang, Q Chang, F Qin, F Fang, Z Wu, G Wan
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 127 KB
english, 2001
20

Mechanical properties of 300 mm wafers

M Akatsuka, K Sueoka, N Adachi, N Morimoto, H Katahama
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 316 KB
english, 2001
21

Issues for the larger diameter epitaxial wafer

M Imai, M Mayusumi, K Inoue, S Nakahara, S Gima
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 355 KB
english, 2001
22

Upper yield point of large diameter silicon

A. Fischer, H. Richter, A. Shalynin, P. Krottenthaler, G. Obermeier, U. Lambert, R. Wahlich
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 200 KB
english, 2001
25

Equilibrium point defect concentration in a growing silicon crystal

K Tanahashi, N Inoue, N Akutsu
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 129 KB
english, 2001
29

Effect of doping on point defect incorporation during silicon growth

V.V Voronkov, R Falster
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 45 KB
english, 2001
30

Can Si(113) wafers be an alternative to Si(001)?

H.-J. Müssig, J. Dabrowski, K.-E. Ehwald, P. Gaworzewski, A. Huber, U. Lambert
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 948 KB
english, 2001
33

A 10 nm MOSFET concept

J Appenzeller, R Martel, P Solomon, K Chan, Ph Avouris, J Knoch, J Benedict, M Tanner, S Thomas, K.L Wang, J.A del Alamo
Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 406 KB
english, 2001
34

Preface

Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 22 KB
english, 2001
35

Author Index Volume 56, Numbers 1-2

Journal:
Microelectronic Engineering
Year:
2001
Language:
english
File:
PDF, 39 KB
english, 2001