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Volume 38; Issue 2
Main
Microelectronics Reliability
Volume 38; Issue 2
Microelectronics Reliability
Volume 38; Issue 2
1
Thermodynamic study, compositional and electrical characterization of LPCVD SiO2 films grown from TEOS/N2O mixtures
V.Em. Vamvakas
,
D. Davazoglou
,
C. Vahlas
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 198 KB
Your tags:
english, 1998
2
The impact of F contamination induced by the process on the gate oxide reliability
G Ghidini
,
C Clementi
,
D Drera
,
F Maugain
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 110 KB
Your tags:
english, 1998
3
Advanced modeling of silicon oxidation
D.R Wolters
,
A.T.A Zegers-van Duijnhoven
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 249 KB
Your tags:
english, 1998
4
A percolative simulation of dielectric-like breakdown
C Pennetta
,
Z Gingl
,
L.B Kiss
,
L Reggiani
,
A Cola
,
M De Vittorio
,
M Mazzer
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 252 KB
Your tags:
english, 1998
5
RTP annealings for high-quality LPCVD interpolysilicon dielectric layers
J.H Klootwijk
,
H Van Kranenburg
,
M.H.H Weusthof
,
P.H Woerlee
,
H Wallinga
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 172 KB
Your tags:
english, 1998
6
Flash memory reliability
P Cappelletti
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 139 KB
Your tags:
english, 1998
7
MOSFET parameter degradation after Fowler–Nordheim injection stress
A Candelori
,
E Gomiero
,
G Ghidini
,
A Paccagnella
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 149 KB
Your tags:
english, 1998
8
SiOF and SiO2 deposition in a HDP reactor: tool characterization and film analysis
D.J Den Boer
,
H Fukuda
,
J Helmig
,
J.B.C Van Der Hilst
,
G.C.A.M Janssen
,
A.J Kalkman
,
S Radelaar
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 1.23 MB
Your tags:
english, 1998
9
STI process steps for sub-quarter micron CMOS
P Sallagoity
,
F Gaillard
,
M Rivoire
,
M Paoli
,
M Haond
,
S McClathie
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 599 KB
Your tags:
english, 1998
10
Influence of charge trapping on oxide scaling down
G Ghidini
,
M Alessandri
,
C Clementi
,
F Pellizzer
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 225 KB
Your tags:
english, 1998
11
Editorial
Journal:
Microelectronics Reliability
Year:
1998
File:
PDF, 124 KB
Your tags:
1998
12
Effect of the discharging and recharging of the stress generated oxide charge in metal–oxide–semiconductor capacitors on the low field leakage current
A Meinertzhagen
,
C Petit
,
G Yard
,
M Jourdain
,
F Mondon
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 264 KB
Your tags:
english, 1998
13
Electron traps created in gate oxides by Fowler–Nordheim injections
G. Auriel
,
J. Oualid
,
D. Vuillaume
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 142 KB
Your tags:
english, 1998
14
4 nm Gate dielectrics prepared by RTP low pressure oxidation in O2 and N2O atmosphere
A.J. Bauer
,
E.P. Burte
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 177 KB
Your tags:
english, 1998
15
Experimental verification of three-dimensional simulations of LTO layer deposition on structures prepared by anisotropic wet etching of silicon
E Bär
,
J Lorenz
,
H Ryssel
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 233 KB
Your tags:
english, 1998
16
Flash memory architecture
C Golla
,
S Ghezzi
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 404 KB
Your tags:
english, 1998
17
Effect of N2O nitridation on the electrical properties of MOS gate oxides
A Pacelli
,
A.L Lacaita
,
A Spinelli
,
R Bez
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 153 KB
Your tags:
english, 1998
18
Stress induced degradation features of very thin gate oxides
A Scarpa
,
G Ghibaudo
,
G Ghidini
,
G Pananakakis
,
A Paccagnella
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 230 KB
Your tags:
english, 1998
19
Characterization of the hot-electron-induced degradation in thin SiO2 gate oxides
E Cartier
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 382 KB
Your tags:
english, 1998
20
Structural properties and electrical behaviour of thin silicon oxynitride layers
R Beyer
,
H Burghardt
,
R Reich
,
E Thomas
,
T Gessner
,
D.R.T Zahn
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 220 KB
Your tags:
english, 1998
21
Observation of high interface state densities at the silicon/oxide interface for low doped polysilicon/oxide/silicon capacitor structures
C Leveugle
,
P.K Hurley
,
A Mathewson
,
S Moran
,
E Sheehan
,
A Kalnitsky
Journal:
Microelectronics Reliability
Year:
1998
Language:
english
File:
PDF, 188 KB
Your tags:
english, 1998
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