Volume 38; Issue 2

Microelectronics Reliability

Volume 38; Issue 2

1

Thermodynamic study, compositional and electrical characterization of LPCVD SiO2 films grown from TEOS/N2O mixtures

V.Em. Vamvakas, D. Davazoglou, C. Vahlas

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 198 KB

english, 1998

2

The impact of F contamination induced by the process on the gate oxide reliability

G Ghidini, C Clementi, D Drera, F Maugain

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 110 KB

english, 1998

3

Advanced modeling of silicon oxidation

D.R Wolters, A.T.A Zegers-van Duijnhoven

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 249 KB

english, 1998

4

A percolative simulation of dielectric-like breakdown

C Pennetta, Z Gingl, L.B Kiss, L Reggiani, A Cola, M De Vittorio, M Mazzer

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 252 KB

english, 1998

5

RTP annealings for high-quality LPCVD interpolysilicon dielectric layers

J.H Klootwijk, H Van Kranenburg, M.H.H Weusthof, P.H Woerlee, H Wallinga

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 172 KB

english, 1998

6

Flash memory reliability

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 139 KB

english, 1998

7

MOSFET parameter degradation after Fowler–Nordheim injection stress

A Candelori, E Gomiero, G Ghidini, A Paccagnella

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 149 KB

english, 1998

8

SiOF and SiO2 deposition in a HDP reactor: tool characterization and film analysis

D.J Den Boer, H Fukuda, J Helmig, J.B.C Van Der Hilst, G.C.A.M Janssen, A.J Kalkman, S Radelaar

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 1.23 MB

english, 1998

9

STI process steps for sub-quarter micron CMOS

P Sallagoity, F Gaillard, M Rivoire, M Paoli, M Haond, S McClathie

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 599 KB

english, 1998

10

Influence of charge trapping on oxide scaling down

G Ghidini, M Alessandri, C Clementi, F Pellizzer

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 225 KB

english, 1998

11

Editorial

Journal:

Microelectronics Reliability

Year:

1998

File:

PDF, 124 KB

1998

12

Effect of the discharging and recharging of the stress generated oxide charge in metal–oxide–semiconductor capacitors on the low field leakage current

A Meinertzhagen, C Petit, G Yard, M Jourdain, F Mondon

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 264 KB

english, 1998

13

Electron traps created in gate oxides by Fowler–Nordheim injections

G. Auriel, J. Oualid, D. Vuillaume

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 142 KB

english, 1998

14

4 nm Gate dielectrics prepared by RTP low pressure oxidation in O2 and N2O atmosphere

A.J. Bauer, E.P. Burte

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 177 KB

english, 1998

15

Experimental verification of three-dimensional simulations of LTO layer deposition on structures prepared by anisotropic wet etching of silicon

E Bär, J Lorenz, H Ryssel

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 233 KB

english, 1998

16

Flash memory architecture

C Golla, S Ghezzi

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 404 KB

english, 1998

17

Effect of N2O nitridation on the electrical properties of MOS gate oxides

A Pacelli, A.L Lacaita, A Spinelli, R Bez

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 153 KB

english, 1998

18

Stress induced degradation features of very thin gate oxides

A Scarpa, G Ghibaudo, G Ghidini, G Pananakakis, A Paccagnella

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 230 KB

english, 1998

19

Characterization of the hot-electron-induced degradation in thin SiO2 gate oxides

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 382 KB

english, 1998

20

Structural properties and electrical behaviour of thin silicon oxynitride layers

R Beyer, H Burghardt, R Reich, E Thomas, T Gessner, D.R.T Zahn

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 220 KB

english, 1998

21

Observation of high interface state densities at the silicon/oxide interface for low doped polysilicon/oxide/silicon capacitor structures

C Leveugle, P.K Hurley, A Mathewson, S Moran, E Sheehan, A Kalnitsky

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 188 KB

english, 1998