Volume 194; Issue 2

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physica status solidi (a)
Volume 194; Issue 2

physica status solidi (a)

Volume 194; Issue 2

1

Papers presented at the International Workshop on Nitride Semiconductors (IWN 2002)

Axel Hoffmann, Angela Rizzi

Journal:

physica status solidi (a)

Year:

2002

File:

PDF, 407 KB

2002

2

GaN-Based Devices on Si

A. Krost, A. Dadgar

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 214 KB

english, 2002

3

Monolithic Blue LED Series Arrays for High-Voltage AC Operation

Jin-Ping Ao, Hisao Sato, Takashi Mizobuchi, Kenji Morioka, Shunsuke Kawano, Yoshihiko Muramoto, Young-Bae Lee, Daisuke Sato, Yasuo Ohno, Shiro Sakai

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 110 KB

english, 2002

4

High Power LEDs – Technology Status and Market Applications

F.M. Steranka, J. Bhat, D. Collins, L. Cook, M.G. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P.S. Martin, M. Misra, G. Mue

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 433 KB

english, 2002

5

Failure Modes and Mechanisms of DC-Aged GaN LEDs

G. Meneghesso, S. Levada, E. Zanoni, S. Podda, G. Mura, M. Vanzi, A. Cavallini, A. Castaldini, S. Du, I. Eliashevich

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 268 KB

english, 2002

6

High-Efficiency UV Light-Emitting Diode

S. Kamiyama, M. Iwaya, H. Amano, I. Akasaki

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 181 KB

english, 2002

7

InGaN on SiC LEDs for High Flux and High Current Applications

J. Baur, B. Hahn, M. Fehrer, D. Eisert, W. Stein, A. Plössl, F. Kühn, H. Zull, M. Winter, V. Härle

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 96 KB

english, 2002

8

InGaN Vertical Microcavity LEDs with a Si-Doped AlGaN/GaN Distributed Bragg Reflector

M. Arita, M. Nishioka, Y. Arakawa

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 116 KB

english, 2002

9

Blue–Violet Laser Diodes Suitable for Blu-ray Disk

M. Ikeda, S. Uchida

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 190 KB

english, 2002

10

Influence of the Layer Design on the Far Field Pattern in GaN Based Laser Structures

M. Röwe, P. Michler, J. Gutowski, S. Bader, G. Brüderl, V. Kümmler, S. Miller, A. Weimar, A. Lell, V. Härle

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 370 KB

english, 2002

11

Degradation Analysis of InGaN Laser Diodes

V. Kümmler, G. Brüderl, S. Bader, S. Miller, A. Weimar, A. Lell, V. Härle, U.T. Schwarz, N. Gmeinwieser, W. Wegscheider

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 73 KB

english, 2002

12

Blue–Violet Nitride Lasers

S. Nagahama, T. Yanamoto, M. Sano, T. Mukai

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 85 KB

english, 2002

13

Electron Beam Pumped Nitride Vertical Cavity Surface Emitting Structures with AlGaN/AlN DBR Mirrors

H. Klausing, F. Fedler, J. Dänhardt, R. Jaurich, A. Kariazine, S. Günster, D. Mistele, J. Graul

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 258 KB

english, 2002

14

Progress in High-Power, High Frequency AlGaN/GaN HEMTs

L.F. Eastman, V. Tilak, V. Kaper, J. Smart, R. Thompson, B. Green, J.R. Shealy, T. Prunty

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 186 KB

english, 2002

15

Growth of GaN/AlGaN HFETs on SiC Substrates with Optimized Electrical Characteristics Using the Ammonia-MBE Technique

J.B. Webb, H. Tang, J.A. Bardwell, Y. Liu, J. Lapointe, T. MacElwee

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 184 KB

english, 2002

16

Pnp AlGaN/GaN Heterojunction Bipolar Transistors Operating at 300 °C

K. Kumakura, T. Makimoto, N. Kobayashi

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 120 KB

english, 2002

17

Current Collapse in AlGaN/GaN HEMTs Investigated by Electrical and Optical Characterizations

T. Mizutani, Y. Ohno, M. Akita, S. Kishimoto, K. Maezawa

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 181 KB

english, 2002

18

Influence of Process Technology on DC-Performance of GaN-Based HFETs

D. Mistele, T. Rotter, Z. Bougrioua, M. Marso, H. Roll, H. Klausing, F. Fedler, O. Semchinova, I. Moerman, J. Graul

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 324 KB

english, 2002

19

High-Performance AlGaN/GaN High Electron Mobility Transistors on SiC

V. Kumar, A. Kuliev, R. Schwindt, G. Simin, J. Yang, M. Asif Khan, I. Adesida

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 103 KB

english, 2002

20

Large Area AlGaN/GaN HEMTs Grown on Insulating Silicon Carbide Substrates

R. Lossy, N. Chaturvedi, P. Heymann, J. Würfl, S. Müller, K. Köhler

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 94 KB

english, 2002

21

Growth and Characterisation of AlGaN/GaN HEMT on Silicon Substrates

H. Kalisch, Y. Dikme, G. Gerstenbrandt, A. Alam, A. Szymakowski, H. Klockenhoff, C. Rieckmann, M. Heuken, R.H. Jansen, P. Javorka, M. Marso, A. Fox, P. Kordos, H. Lüth

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 154 KB

english, 2002

22

Channel Mobility in AlGaN/GaN HFETs on SiC and Sapphire Substrates

M.J. Uren, T. Martin, B.T. Hughes, K.P. Hilton, A. Wells, R.S. Balmer, D.C. Herbert, A.M. Keir, D.J. Wallis, A. J. Pidduck, M. Missous

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 90 KB

english, 2002

23

Fabrication and Performance of AlGaN/GaN HEMTs on (111) Si Substrates

P. Javorka, A. Alam, M. Marso, M. Wolter, A. Fox, M. Heuken, P. Kordoš

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 113 KB

english, 2002

24

Novel Approaches for Metal–Semiconductor–Metal GaN UV Photodetectors

T. Palacios, F. Calle, E. Monroy, F. Omnès

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 124 KB

english, 2002

25

Study of Exciton Dead Layers in GaN Schottky Diodes with N and Ga-Face Polarity

S. Shokhovets, D. Fuhrmann, R. Goldhahn, G. Gobsch, O. Ambacher, M. Hermann, U. Karrer

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 98 KB

english, 2002

26

Mass Transport of AlxGa1—xN

S. Nitta, Y. Yukawa, Y. Watanabe, S. Kamiyama, H. Amano, I. Akasaki

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 277 KB

english, 2002

27

Decomposition and Uniformity of Material Gases in GaN MOVPE

A. Hirako, K. Ohkawa

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 296 KB

english, 2002

28

GaN Boule Growth: A Pathway to GaN Wafers with Improved Material Quality

R.P. Vaudo, X. Xu, C. Loria, A.D. Salant, J.S. Flynn, G.R. Brandes

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 125 KB

english, 2002

29

Growth of Crack-Free and High-Quality AlGaN with High Al Content Using Epitaxial AlN (0001) Films on Sapphire

Y. Kida, T. Shibata, H. Naoi, H. Miyake, K. Hiramatsu, M. Tanaka

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 144 KB

english, 2002

30

Laser-Assisted Metalorganic Vapor-Phase Epitaxy (LMOVPE) of Indium Nitride (InN)

A.G. Bhuiyan, T. Tanaka, A. Yamamoto, A. Hashimoto

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 124 KB

english, 2002

31

The Role of Interfaced Modes in the Raman Spectra of AlN/InN Superlattices

E.B. Barros, V. Lemos, V.N. Freire, J.R. Gonçalves, G.A. Farias, J. Mendes Filho

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 193 KB

english, 2002

32

Improved Electrical Properties for Metalorganic Vapour Phase Epitaxial InN Films

A. Yamamoto, T. Tanaka, K. Koide, A. Hashimoto

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 141 KB

english, 2002

33

Nucleation Phenomena during Molecular Beam Epitaxy of GaN Observed by Line-of-Sight Quadrupole Mass Spectrometry

G. Koblmüller, P. Pongratz, R. Averbeck, H. Riechert

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 157 KB

english, 2002

34

In-Situ Monitoring of GaN Growth by Hydride Vapor Phase Epitaxy

D. Martin, J.F. Carlin, V. Wagner, H.J. Bühlmann, M. Ilegems

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 113 KB

english, 2002

35

Heteroepitaxial Growth of GaN on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy

P. Waltereit, S.-H. Lim, M. McLaurin, J.S. Speck

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 174 KB

english, 2002

36

High Quality GaN Grown by Raised-Pressure HVPE

S. Bohyama, K. Yoshikawa, H. Naoi, H. Miyake, K. Hiramatsu, Y. Iyechika, T. Maeda

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 835 KB

english, 2002

37

Nanopipes in Thick GaN Films Grown at High Growth Rate

E. Valcheva, T. Paskova, P.O.Å. Persson, B. Monemar

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 115 KB

english, 2002

38

Stranski-Krastanov Growth of InN Nanostructures on GaN Studied by RHEED, STM and AFM

C. Nörenberg, R.A. Oliver, M.G. Martin, L. Allers, M.R. Castell, G.A.D. Briggs

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 120 KB

english, 2002

39

Nonpolar (11&1macr;0) a-Plane Gallium Nitride Thin Films Grown on (1&1macr;02) r-Plane Sapphire: Heteroepitaxy and Lateral Overgrowth

M.D. Craven, S.H. Lim, F. Wu, J.S. Speck, S.P. DenBaars

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 120 KB

english, 2002

40

High Quality GaN Grown by Facet-Controlled ELO (FACELO) Technique

H. Miyake, R. Takeuchi, K. Hiramatsu, H. Naoi, Y. Iyechika, T. Maeda, T. Riemann, F. Bertram, J. Christen

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 388 KB

english, 2002

41

Effect of the Nucleation Layer on Stress during Cantilever Epitaxy of GaN on Si (111)

T.M. Katona, J.S. Speck, S.P. Denbaars

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 135 KB

english, 2002

42

Fabrication of Freestanding GaN Wafers by Hydride Vapor-Phase Epitaxy with Void-Assisted Separation

Y. Oshima, T. Eri, M. Shibata, H. Sunakawa, A. Usui

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 114 KB

english, 2002

43

A Mechanistic Study of GaN Laser Lift-Off

T. Bret, V. Wagner, D. Martin, P. Hoffmann, M. Ilegems

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 190 KB

english, 2002

44

Self-Separation of Freestanding GaN from Sapphire Substrates by Hydride Vapor Phase Epitaxy

K. Tomita, T. Kachi, S. Nagai, A. Kojima, S. Yamasaki, M. Koike

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 153 KB

english, 2002

45

Importance of Nonradiative Recombination Processes in Violet/UV InGaN Light Emitting Diodes

T. Stephan, M. Kunzer, P. Schlotter, W. Pletschen, H. Obloh, S. Müller, K. Köhler, J. Wagner

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 93 KB

english, 2002

46

Role of TiN Film in the Fabrication of Freestanding GaN Wafers Using Hydride Vapor Phase Epitaxy with Void-Assisted Separation

A. Usui, T. Ichihashi, K. Kobayashi, H. Sunakawa, Y. Oshima, T. Eri, M. Shibata

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 103 KB

english, 2002

47

Effects of Surface Treatment on the Electrical Properties of Ohmic Contacts to (In)GaN for High Performance Optical Devices

J.-S. Jang, S.-J. Park, T.-Y. Seong

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 246 KB

english, 2002

48

Low Resistance Ti/Al/Mo/Au Ohmic Contacts for AlGaN/GaN Heterostructure Field Effect Transistors

D. Selvanathan, L. Zhou, V. Kumar, I. Adesida

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 81 KB

english, 2002

49

Carrier Transport Mechanism of Pd/Pt/Au Ohmic Contacts to p-GaN in InGaN Laser Diode

Joon Seop Kwak, J. Cho, S. Chae, K.K. Choi, Y.J. Sung, S.N. Lee, O.H. Nam, Y. Park

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 217 KB

english, 2002