Volume 2; Issue 6

physica status solidi (c)

Volume 2; Issue 6

1

Outlining contributions of Professor Julian Auleytner to the field (In memory of Professor Julian Auleytner, 1922–2003)

Tadeusz Figielski

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 42 KB

english, 2005

2

First principles modelling of (100) H-induced platelets in silicon

Natalia Martsinovich, Irene Suárez Martínez, Malcolm I. Heggie

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 162 KB

english, 2005

3

Study of dislocations in nanoscale semiconductors by ab initio molecular dynamics and lattice Green's function methods

K. Masuda-Jindo, Vu Van Hung, M. Menon

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 655 KB

english, 2005

4

Structural and electrical studies of partial dislocations and stacking faults in (11-20)-oriented 4H-SiC

L. Ottaviani, H. Idrissi, P. Hidalgo, M. Lancin, B. Pichaud

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 620 KB

english, 2005

5

SEM/EBIC investigations of extended defect system in GaN epilayers

N. M. Shmidt, V. V. Sirotkin, A. A. Sitnikova, O. A. Soltanovich, R. V. Zolotareva, E. B. Yakimov

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 418 KB

english, 2005

6

Early stages of iron precipitation in silicon

R. Khalil, V. Kveder, W. Schröter, M. Seibt

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 272 KB

english, 2005

7

Rod-like defects in CZ-Si investigated by spin resonance and photoluminescence spectroscopies

T. Mchedlidze, S. Binetti, A. Le Donne, M. Suezawa, S. Pizzini

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 155 KB

english, 2005

8

Influence of oxygen on the dislocation related luminescence centers in silicon

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 137 KB

english, 2005

9

Influence of the deformation on the luminescence properties of Si light-emitting diodes

N.A. Sobolev, A.M. Emel'yanov, E.I. Shek, O.V. Feklisova, E.B. Yakimov, T.V. Kotereva

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 207 KB

english, 2005

10

Electrical properties of gold at dislocations in silicon

O. Voß, V. V. Kveder, W. Schröter, M. Seibt

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 119 KB

english, 2005

11

Recombination activity and electrical levels of “clean” and copper contaminated dislocations in p-type Si

O. F. Vyvenko, M. Kittler, W. Seifert, M. V. Trushin

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 89 KB

english, 2005

12

Diffusion–drift–aggregation model of the interaction of point defects and dislocations in semiconductors

H. S. Leipner, H. Lei

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 218 KB

english, 2005

13

Temperature activated 1.2 eV photoluminescence in semi-insulating SiC wafers

N. E. Korsunska, V. Kushnirenko, I. Tarasov, S. Ostapenko

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 104 KB

english, 2005

14

Study of defects in InxGa1–xSb bulk crystals

C. Díaz-Guerra, M. F. Chioncel, J. Vincent, V. Bermúdez, J. Piqueras, E. Diéguez

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 399 KB

english, 2005

15

Fabrication of nanocrystal memories by ultra low energy ion implantation

N. Cherkashin, C. Bonafos, H. Coffin, M. Carrada, S. Schamm, G. Ben Assayag, D. Chassaing, P. Dimitrakis, P. Normand, M. Perego, M. Fanciulli, T. Muller, K. H. Heinig, A. Claverie

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 267 KB

english, 2005

16

Surface control of cooperative phenomena in nanostructured materials with quantum dots

S. V. Ivanov, A. G. Gladyshev, A. V. Kamanin, A. G. Kolmakov, N. V. Kryzhanovskaya, Yu. G. Musikhin, E. E. Baranov, V. N. Petrov, I. V. Sedova, N. M. Shmidt, A. N. Titkov

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 256 KB

english, 2005

17

Capacitance response due to recharging of extended defects attached to the edge of the space charge region of the Schottky diode

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 317 KB

english, 2005

18

Effect of interface states on population of quantum wells in SiGe/Si structures

I. V. Antonova, M.S. Kag an, V. I. Polyakov, L. L. Golik, J. Kolodzey

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 216 KB

english, 2005

19

New challenge: extended defects in ferromagnetic semiconductors

T. Figielski, T. Wosinski, O. Pelya, J. Sadowski

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 128 KB

english, 2005

20

Dislocation networks adapted to order the growth of III-V semiconductor nanostructures

J. Coelho, G. Patriarche, F. Glas, I. Sagnes, G. Saint-Girons

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 142 KB

english, 2005

21

Thermally induced strain relaxation in SiGe/Si heterostructures with low-temperature buffer layers

V. I. Vdovin, T. G. Yugova, M. M. Rzaev, F. Schäffler, M.G. Mil'vidskii

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 307 KB

english, 2005

22

Anisotropic strain relaxation in lattice-mismatched III–V epitaxial layers

O. Yastrubchak, J. Z. Domagała, T. Wosiński, A. Kudła, K. Regiński

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 579 KB

english, 2005

23

Hardening of semiconductor crystals caused by the dynamic aging of dislocations

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 107 KB

english, 2005

24

Spin-resonant change of unlocking stress for dislocations in silicon

M. V. Badylevich, V. V. Kveder, V. I. Orlov, Yu. A. Ossipyan

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 69 KB

english, 2005

25

Enhanced dopant solubility in strained silicon

J. Adey, R. Jones, P. R. Briddon

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 88 KB

english, 2005

26

Precipitation and extended defect formation in silicon

Jan Vanhellemont, Olivier De Gryse, Paul Clauws

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 1.24 MB

english, 2005

27

Effect of carbon on oxygen precipitation in Czochralski silicon

C. A. Londos, M. S. Potsidi, V. V. Emtsev

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 174 KB

english, 2005

28

Generation of dislocations in annealed silicon wafers under applied stress

M. V. Mezhennyi, M. G. Milvidskii, V. Ya. Reznik, R. J. Falster

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 207 KB

english, 2005

29

The effect of dislocation core structure on the plastic and fracture behavior of GaAs and InP

P. Pirouz, S. Wang, B. Bayu-Aji, M. Zhang, J.-L. Démenet

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 685 KB

english, 2005

30

TEM observations of the coexistence of perfect and dissociated dislocations in SiC under high stress

J. L. Demenet, X. Milhet, J. Rabier

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 370 KB

english, 2005

31

Cyclic deformation of silicon single crystals: correlation between dislocation microstructure and mechanical behaviour during linear hardening

Alain Jacques, Marc Legros, Tomas Kruml, Amand George

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 207 KB

english, 2005

32

Study of Shockley partial dislocation mobility in highly N-doped 4H-SiC by cantilever bending

H. Idrissi, G. Regula, M. Lancin, J. Douin, B. Pichaud

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 527 KB

english, 2005

33

Application of electron holography to extended defects: Schottky barriers at NiSi2 precipitates in silicon

P. Formanek, M. Kittler

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 392 KB

english, 2005

34

Simulation of oxygen- or carbon containing complexes at silicon-silicon interface in cluster approximation

A. M. Saad, A. L. Pushkarchuk, A. K. Fedotov, S. A. Kuten, A. Mazanik

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 142 KB

english, 2005

35

Photoluminescence study of GaN with dislocations introduced by plastic deformation

I. Yonenaga, H. Makino, S. Itoh, T. Yao

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 195 KB

english, 2005

36

Polarity influence on the nanoindentation response of GaAs

G. Patriarche, E. Le Bourhis, L. Largeau, J.-P. Rivière

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 334 KB

english, 2005

37

Electronic structure of the KCl and AgCl nanocrystals with edge dislocations

Yu. K. Timoshenko, V. A. Shunina

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 103 KB

english, 2005

38

Simulation of uncharged dislocation EBIC contrast at high excitation level

Nikolay N. Negulyaev, Eugene B. Yakimov, Sergey I. Zaitsev

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 204 KB

english, 2005

39

Dislocation photoluminescence in silicon crystals of various impurity contents

S. A. Shevchenko, A. N. Izotov

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 180 KB

english, 2005

40

Optical characterization of crystalline silicon embedded in a-Si matrix

T. V. Torchynska, A. Vivas Hernandez, M. Dybiec, Yu. Emirov, I. Tarasov, S. Ostapenko, Yasuhiro Matsumoto

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 329 KB

english, 2005

41

Magnetostimulated softening and hardening of semiconductors

E. V. Darinskaya, E. A. Petrzhik, Yu. M. Ivanov, S. A. Erofeeva, M. R. Raukhman

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 128 KB

english, 2005

42

Oxygen precipitation and creation of defects in neutron irradiated Cz-Si annealed under high pressure

A. Misiuk, B. Surma, C. A. Londos, J. Bak-Misiuk, W. Wierzchowski, K. Wieteska, W. Graeff

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 288 KB

english, 2005

43

Strain state of InAlAs/InP layers subjected to high pressure treatment

A. Shalimov, J. Bak-Misiuk, J. Kaniewski, A. Misiuk, J. Domagala, E. Kowalczyk

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 158 KB

english, 2005

44

Structural features of Ge(Ga) single crystals grown under conditions simulating the microgravity perturbation factors

I. A. Prokhorov, I. L. Shul'pina, V. I. Strelov, B. G. Zakharov, V. V. Ratnikov

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 381 KB

english, 2005

45

Structural and electrical studies of partial dislocations and stacking faults in (11-20)-oriented 4H-SiC

L. Ottaviani, H. Idrissi, P. Hidalgo, M. Lancin, B. Pichaud

Journal:

physica status solidi (c)

Year:

2005

File:

PDF, 339 KB

2005

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