Volume 6; Issue 8

physica status solidi (c)

Volume 6; Issue 8

1

Combined XBIC/μ-XRF/μ-XAS/DLTS investigation of chemical character and electrical properties of Cu and Ni precipitates in silicon

M. Trushin, O. Vyvenko, W. Seifert, M. Kittler, I. Zizak, A. Erko, M. Seibt, C. Rudolf

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 356 KB

english, 2009

2

Dislocation structure in interfaces between Si wafers with hybrid crystal orientation

Vladimir Vdovin, Nikolai Zakharov, Eckhard Pippel, Peter Werner, Mikhail Milvidskii, Mike Ries, Mike Seacrist, Robert Falster

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 1.34 MB

english, 2009

3

Extended free-volume defects in chalcogenide glassy semiconductors induced by high-energy γ-irradiation

Valentina Balitska, Jacek Filipecki, Oleh Shpotyuk

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 179 KB

english, 2009

4

Generation and suppression of misfit dislocations at the seed/crystal interface in Si bulk crystal growth

Toshinori Taishi, Keigo Hoshikawa, Yutaka Ohno, Ichiro Yonenaga

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 352 KB

english, 2009

5

Point and extended defects in irradiated silicon and consequences for detectors

Sorina Lazanu, Magdalena Lidia Ciurea, Ionel Lazanu

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 282 KB

english, 2009

6

Extended defects in ion assisted MBE grown SiGe/Si-nanostructures

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 881 KB

english, 2009

7

Cation-interlinking network cluster approach in application to extended defects in covalent-bonded glassy semiconductors

Oleh Shpotyuk, Vitaliy Boyko, Malgorzata Hyla

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 183 KB

english, 2009

8

Simplistic approach for 2D grown-in microdefect modeling

Anatoly Prostomolotov, Nataliya Verezub

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 553 KB

english, 2009

9

Misfit dislocations and surface morphology of InGaAs/GaAs heterostructures grown by MOVPE

Łukasz Gelczuk, Maria Dąbrowska-Szata, Agata Masalska, Elżbieta Łusakowska, Piotr Dłużewski

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 240 KB

english, 2009

10

Makyoh topography for the studies of extended defects: possibilities and limitations

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 785 KB

english, 2009

11

Effect of dislocation trails on gold diffusion in Si

O. V. Feklisova, E. B. Yakimov

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 420 KB

english, 2009

12

Interaction of interstitials with buried amorphous layer in silicon

E. Oliviero, M. L. David, P. F. P. Fichtner

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 701 KB

english, 2009

13

Doping influence on the nanoindentation response of GaAs

Eric Le Bourhis, Gilles Patriarche

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 645 KB

english, 2009

14

Is there an impact of threading dislocations on the characteristics of devices fabricated in strained-Ge substrates?

Eddy Simoen, Gijs Brouwers, Rui Yang, Geert Eneman, Mireia Bargallo Gonzalez, Frederick Leys, Brice De Jaeger, Jerome Mitard, David Brunco, Laurent Souriau, Nyles Cody, Shawn Thomas, Luc Lajaunie, Mar

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 450 KB

english, 2009

15

Dynamics of nanostructure formation using point defects on semiconductors by laser radiation

A. Medvid, P. Onufrijevs, E. Dauksta, J. Barloti, D. Grabovskis, A. Ulyashin

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 252 KB

english, 2009

16

Integrated modeling and verification of 2D grown-in microdefect distributions in Cz dislocation-free silicon single crystals

Anatoly Prostomolotov

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 1.84 MB

english, 2009

17

Modeling of nucleation and evolution of hydrogen-induced platelets in silicon crystals

Oleg Velichko, Yury Shaman, Alexander Fedotov

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 288 KB

english, 2009

18

Profile of EBIC dislocation contrast in semiconductors with small diffusion length

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 242 KB

english, 2009

19

A study of defect evolution in multi-energy helium implanted monocrystalline and polycrystalline silicon

K. J. Abrams, S. E. Donnelly, M.-F. Beaufort, J. Terry, L. I. Haworth, D. Alquier

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 616 KB

english, 2009

20

Amorphisation and sub-100-nm exfoliation of hydrogen-ion-implanted silicon

O. Moutanabbir, B. Terreault, A. Giguère

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 358 KB

english, 2009

21

Micropipes in silicon carbide crystals

Mikhail Yu. Gutkin, Alexander G. Sheinerman, Tatiana S. Argunova

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 459 KB

english, 2009

22

On intrinsic point defect cluster formation during Czochralski crystal growth

Jan Vanhellemont, Piotr Spiewak, Koji Sueoka, Igor Romandic

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 364 KB

english, 2009

23

Influence of the strain-relaxation induced defect creation on the leakage current of embedded Si1–xGex source/drain junctions

Mireia Bargallo Gonzalez, Eddy Simoen, Bertrand Vissouvanadin, Geert Eneman, Peter Verheyen, Roger Loo, Cor Claeys, Vladimir Machkaoutsan, Pierre Tomasini, Shawn Thomas

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 438 KB

english, 2009

24

Investigation of defects in organic semiconductors by charge based Deep Level Transient Spectroscopy (Q-DLTS)

T. P. Nguyen, C. Renaud, P. Le Rendu, S. H. Yang

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 366 KB

english, 2009

25

Anisotropy of crack and dislocation formation in GaAs

Ingmar Ratschinski, Frank Heyroth, Wolfgang Fränzel, Hartmut S. Leipner

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 1.09 MB

english, 2009

26

Time-resolved measurements of dislocation-related photoluminescence bands in silicon

E. A. Steinman, A. J. Kenyon, A. N. Tereshchenko

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 202 KB

english, 2009

27

Correlation of electrical and luminescence properties of a dislocation network with its microscopic structure

Teimuraz Mchedlidze, Thomas Wilhelm, Tzanimir Arguirov, Maxim Trushin, Manfred Reiche, Martin Kittler

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 259 KB

english, 2009

28

Proton backscattering by point and extended defects in ion-implanted Si

Nikolay Sobolev, Vladimir Sakharov, Igor Serenkov, Anton Kalyadin, Vladimir Vdovin

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 102 KB

english, 2009

29

Extended defects generated in the slip plane by moving dislocation in diamond lattice crystals: morphology and properties

V. Eremenko, J.-L. Demenet, J. Rabier

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 832 KB

english, 2009

30

Effect of steps on dislocations in CVD diamond grown on {001} substrates

Philip Martineau, Mike Gaukroger, Riz Khan, Dave Evans

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 466 KB

english, 2009

31

Characterization of crystalline defects in silicon for SOI applications by means of light scattering tomography

Oleg Kononchuk, Vanessa Monier, Luciana Capello, Bernard Pichaud

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 359 KB

english, 2009

32

Dislocation nucleation in heteroepitaxial semiconducting films

B. Pichaud, N. Burle, M. Texier, C. Alfonso, M. Gailhanou, J. Thibault-Pénisson, C. Fontaine, V. I. Vdovin

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 998 KB

english, 2009

33

Structure, chemistry and electrical properties of extended defects in crystalline silicon for photovoltaics

M. Seibt, D. Abdelbarey, V. Kveder, C. Rudolf, P. Saring, L. Stolze, O. Voß

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 502 KB

english, 2009

34

Localisation and identification of recombination-active extended defects in crystalline silicon by means of focused ion-beam preparation and transmission electron microscopy

L. Stolze, P. Saring, C. Rudolf, M. Seibt

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 447 KB

english, 2009

35

Defects in zinc doped silicon studied on base of X-ray diffuse scattering analysis

Vladimir Privezentsev

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 264 KB

english, 2009

36

Contents: Phys. Status Solidi C 6/8

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 99 KB

english, 2009

37

Preface: Phys. Status Solidi C 6/8

Jacques Rabier, Eric Le Bourhis, Conference Chairmen

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 196 KB

english, 2009

38

Information for authors: Phys. Status Solidi C 6/8

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 105 KB

english, 2009

39

Combined XBIC/μ-XRF/μ-XAS/DLTS investigation of chemical character and electrical properties of Cu and Ni precipitates in silicon

M. Trushin, O. Vyvenko, W. Seifert, M. Kittler, I. Zizak, A. Erko, M. Seibt, C. Rudolf

Journal:

physica status solidi (c)

Year:

2009

File:

PDF, 450 KB

2009